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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas UPD46185364BF1-E40Y-EQ1-A

Name: UPD46185364BF1-E40Y-EQ1-A
Brand: Renesas
SKU: UPD46185364BF1-E40Y-EQ1-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPD46185364BF1-E40Y-EQ1-A

Manufacturer:: Renesas

Category:: Memory

Package:: -

Datasheet:: UPD46185364BF1-E40Y-EQ1-A.pdf

Description:: QDR SRAM, 512KX36, 0.45NS

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Product details

Overview

UPD46185364BF1-E40Y-EQ1-A from Renesas Electronics is a 524,288-word × 36-bit synchronous Quad Data Rate II (QDR II) SRAM with HSTL interface, 4-word burst operation, and 1.8 V core supply. It delivers 250 MHz clock frequency (4.0 ns cycle time), supports concurrent read/write ports, and operates across −40°C to +85°C for telecom and networking line-card buffer applications.

For engineers reviewing the UPD46185364BF1-E40Y-EQ1-A datasheet, UPD46185364BF1-E40Y-EQ1-A pinout, UPD46185364BF1-E40Y-EQ1-A application, or UPD46185364BF1-E40Y-EQ1-A equivalent, key selection criteria include its 36-bit wide QDR II architecture, 165-pin plastic BGA (13 × 15) package, user-programmable output impedance (35–70 Ω), and support for separate read/write data paths with DDR timing on C/C# clocks.

Technical Context

This QDR II SRAM uses dual-clock architecture: K/K# registers address/control/data on rising edges, while C/C# control output timing-enabling precise flight-time matching between clock and data. Its internal PLL provides a wide output data valid window and supports future frequency scaling up to 300 MHz.

The device implements independent read and write state machines with burst-4 addressing, allowing simultaneous but non-conflicting transactions. Byte write enable (BW0#–BW3#) permits selective 9-bit sub-word writes, and clock-stop mode restores operation within 20 μs after clock resumption.

Key Specifications

Parameter	Value and Actual Design Meaning
Organization	524,288 words × 36 bits = 18 Mbit total density; enables high-bandwidth packet buffering in 36-bit aligned systems.
Cycle time / Frequency	4.0 ns / 250 MHz; defines maximum sustained throughput of 1.0 Gbps per data pin in burst-4 DDR mode.
Supply voltage	1.8 ± 0.1 V core (VDD); isolated 1.5 V nominal (VDDQ) for I/O buffers; ensures low-power, noise-isolated signaling.
Interface standard	HSTL Class I compliant; guarantees signal integrity at 250 MHz with controlled slew and termination-matched outputs.
Operating temperature	−40°C to +85°C; qualified for industrial and telecom infrastructure environments including base station line cards.
Burst length	Fixed 4-word burst; reduces address bus toggling by 75% versus single-word access, lowering system EMI and controller overhead.
Output impedance	User-programmable 35–70 Ω via ZQ pin; allows dynamic calibration to PCB trace impedance without external resistors.

Pinout & Package

Package: 165-pin plastic BGA (13 × 15 mm, 0.8 mm pitch), lead-free, RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
A0–A16	Synchronous address inputs	17-bit address bus latched on K rising edge; concatenated with 2 internal LSBs to generate burst-4 sequence (A, A+1, A+2, A+3).
D0–D35	Synchronous data inputs	36-bit parallel input path registered on K and K# rising edges; supports full-width or byte-selectable writes via BW0#–BW3#.
Q0–Q35	Synchronous data outputs	36-bit DDR output path synchronized to C/C# rising edges; delivers four consecutive words over two clock cycles.
K, K#	Input clock pair	Differential clock inputs registering all control and address signals on K rising edge; K# phase-aligned for data sampling.
C, C#	Output clock pair	User-controlled timing reference for output data; C# times first/third words, C times second/fourth-enabling skew compensation.
R#, W#	Read/Write command inputs	Active-low synchronous commands latched on K rising edge; mutually exclusive per cycle (read takes precedence).
BW0#–BW3#	Byte write enables	Four active-low signals selecting 9-bit sub-words for partial writes; each controls one 9-bit segment of the 36-bit data bus.
ZQ	Impedance calibration input	Connects to external resistor to ground (RQ); sets output driver impedance to 0.2 × RQ for matched transmission-line drive.
VDD, VDDQ, VSS	Power and ground	Separate 1.8 V core (VDD) and 1.5 V I/O (VDDQ) supplies; multiple VSS balls distributed for low-inductance return paths.
TCK, TMS, TDI, TDO	JTAG test interface	IEEE 1149.1 compliant boundary-scan port operating at 1.8 V I/O level; optional for production test and debug.

Key Features

Feature	Design Value
Concurrent read/write ports	Enables full-duplex memory access-critical for real-time packet buffering where ingress and egress streams operate independently.
100% bus utilization DDR operation	Eliminates idle cycles during burst transfers; achieves peak bandwidth of 36 bits × 250 MHz × 2 (DDR) = 18 Gbps aggregate throughput.
Four-tick burst addressing	Reduces address bus frequency to 1/4 of data rate-simplifies controller design and lowers routing complexity in high-speed PCB layouts.
Internally self-timed write control	Removes need for external write-strobe timing; guarantees reliable write completion independent of clock jitter or skew.
PLL-based output timing margin	Extends data valid window beyond typical setup/hold requirements-improves timing margin for long trace lengths or marginal PCB interconnects.
Programmable output impedance (35–70 Ω)	Allows dynamic impedance tuning to match actual PCB trace impedance-reducing reflections and improving signal fidelity without redesign.

Applications

High-Speed Packet Buffering	Network Processor Interface
Use Scenario: Line-card memory in 10G/40G Ethernet switches stores incoming/outgoing packet headers and payloads before forwarding decisions. IC Role / Device Role / Timing Role: UPD46185364BF1-E40Y-EQ1-A serves as dual-port, burst-access buffer with independent read/write ports synchronized to network processor clocks. Use Value: 36-bit width matches typical NPU data bus; 250 MHz DDR operation delivers 18 Gbps throughput needed for full-rate 40G line-side buffering.	Use Scenario: Interfacing with multi-core network processors requiring low-latency, high-bandwidth shared memory for flow classification and policy lookup tables. IC Role / Device Role / Timing Role: UPD46185364BF1-E40Y-EQ1-A acts as QDR II scratchpad memory, accepting burst-4 reads/writes from processor's dedicated QDR interface. Use Value: HSTL I/O and C/C# clock delivery ensure deterministic timing alignment with processor's DDR timing engine-minimizing setup/hold violations.
Telecom Baseband Processing	Test Equipment Memory Subsystem
Use Scenario: Digital front-end memory in 5G massive MIMO base stations stores IQ samples for beamforming and channel estimation algorithms. IC Role / Device Role / Timing Role: UPD46185364BF1-E40Y-EQ1-A functions as high-throughput sample buffer, interfacing with FPGA-based DSP engines via QDR II protocol. Use Value: −40°C to +85°C rating ensures reliability in outdoor cabinet deployments; clock-stop capability supports power-gating during idle periods.	Use Scenario: High-speed pattern memory in automated test equipment (ATE) storing stimulus/response vectors for semiconductor device validation. IC Role / Device Role / Timing Role: UPD46185364BF1-E40Y-EQ1-A provides deterministic, low-jitter memory access synchronized to ATE timing generator clocks. Use Value: Programmable output impedance and echo clocks (CQ/CQ#) enable precise data-valid window measurement-critical for sub-nanosecond timing verification.

High-Speed Packet Buffering

Network Processor Interface

Use Scenario: Line-card memory in 10G/40G Ethernet switches stores incoming/outgoing packet headers and payloads before forwarding decisions.

IC Role / Device Role / Timing Role: UPD46185364BF1-E40Y-EQ1-A serves as dual-port, burst-access buffer with independent read/write ports synchronized to network processor clocks.

Use Value: 36-bit width matches typical NPU data bus; 250 MHz DDR operation delivers 18 Gbps throughput needed for full-rate 40G line-side buffering.

Use Scenario: Interfacing with multi-core network processors requiring low-latency, high-bandwidth shared memory for flow classification and policy lookup tables.

IC Role / Device Role / Timing Role: UPD46185364BF1-E40Y-EQ1-A acts as QDR II scratchpad memory, accepting burst-4 reads/writes from processor's dedicated QDR interface.

Use Value: HSTL I/O and C/C# clock delivery ensure deterministic timing alignment with processor's DDR timing engine-minimizing setup/hold violations.

Telecom Baseband Processing

Test Equipment Memory Subsystem

Use Scenario: Digital front-end memory in 5G massive MIMO base stations stores IQ samples for beamforming and channel estimation algorithms.

IC Role / Device Role / Timing Role: UPD46185364BF1-E40Y-EQ1-A functions as high-throughput sample buffer, interfacing with FPGA-based DSP engines via QDR II protocol.

Use Value: −40°C to +85°C rating ensures reliability in outdoor cabinet deployments; clock-stop capability supports power-gating during idle periods.

Use Scenario: High-speed pattern memory in automated test equipment (ATE) storing stimulus/response vectors for semiconductor device validation.

IC Role / Device Role / Timing Role: UPD46185364BF1-E40Y-EQ1-A provides deterministic, low-jitter memory access synchronized to ATE timing generator clocks.

Use Value: Programmable output impedance and echo clocks (CQ/CQ#) enable precise data-valid window measurement-critical for sub-nanosecond timing verification.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C2663KV18-400BZXC	36-bit, 512K × 36, 400 MHz (2.5 ns), 1.8 V core, 165-pin BGA; higher speed, tighter timing margins.	Requires stricter layout and termination; suited for designs targeting >300 MHz operation where UPD46185364BF1-E40Y-EQ1-A's 250 MHz is insufficient.	Select when system clock exceeds 250 MHz and board-level signal integrity supports 400 MHz QDR II timing.
AS7C33256P-15JIN	32-bit, 1M × 32, 15 ns async SRAM, 3.3 V, 100-pin TQFP; asynchronous interface, lower density, no burst or DDR features.	Lacks QDR II timing, burst, or concurrent ports; only viable for legacy or low-speed control-plane buffering where bandwidth is not critical.	Choose only for cost-sensitive, non-real-time applications where QDR II features are unnecessary and 3.3 V supply is available.

Compared with CY7C2663KV18-400BZXC and AS7C33256P-15JIN, UPD46185364BF1-E40Y-EQ1-A offers optimal balance of 250 MHz QDR II performance, industrial temperature range, and HSTL compatibility-making it ideal for telecom and networking systems where timing margin and thermal robustness outweigh raw speed.

Availability

UPD46185364BF1-E40Y-EQ1-A is available at Aetrix Electronics and suitable for high-speed packet buffering, network processor interfaces, and telecom baseband processing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for UPD46185364BF1-E40Y-EQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD46185364BF1-E40Y-EQ1-A belongs to Renesas' QDR II SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in networking and telecom equipment where deterministic DDR timing and concurrent access are essential.

FAQ

What is the memory organization and total capacity of UPD46185364BF1-E40Y-EQ1-A?

UPD46185364BF1-E40Y-EQ1-A is organized as 524,288 words × 36 bits, yielding a total capacity of 18 Mbit (18,874,368 bits). This configuration supports high-throughput data buffering in 36-bit aligned systems such as network processors and packet-switching ASICs, and is explicitly confirmed in the Renesas datasheet R10DS0113EJ0200 Rev.2.00 on page 1.

Does UPD46185364BF1-E40Y-EQ1-A support concurrent read and write operations?

Yes, UPD46185364BF1-E40Y-EQ1-A supports true concurrent read and write operations through physically separate read and write data ports. The datasheet confirms this on page 1, stating "Separate independent read and write data ports with concurrent transactions," enabling full-duplex memory access critical for real-time packet buffering and telecom baseband processing.

What package type and pin count does UPD46185364BF1-E40Y-EQ1-A use?

UPD46185364BF1-E40Y-EQ1-A uses a 165-pin plastic BGA package with 13 × 15 mm footprint and 0.8 mm ball pitch. This is documented in the "Ordering Information" table (page 2) and "Pin Arrangement" section (page 6) of the official Renesas datasheet R10DS0113EJ0200 Rev.2.00, and is consistent across all members of the μPD46185xxx family.

What is the operating temperature range for UPD46185364BF1-E40Y-EQ1-A?

UPD46185364BF1-E40Y-EQ1-A is rated for industrial temperature operation from −40°C to +85°C, as indicated by the "Y" suffix in the part number and confirmed in the "Ordering Information" table on page 2 of the Renesas datasheet R10DS0113EJ0200 Rev.2.00. This makes it suitable for deployment in telecom infrastructure, base stations, and industrial networking equipment.

How does UPD46185364BF1-E40Y-EQ1-A implement output impedance control?

UPD46185364BF1-E40Y-EQ1-A implements programmable output impedance via the ZQ pin, which connects to an external resistor to ground (RQ). The output driver impedance is set to 0.2 × RQ, supporting adjustment from 35 Ω to 70 Ω. This is detailed in the "Pin Description" section (page 8) and "DC Characteristics" tables (pages 17–18) of the Renesas datasheet R10DS0113EJ0200 Rev.2.00.

UPD46185364BF1-E40Y-EQ1-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Programmable:: Not Verified

Memory Type:: -

Memory Format:: -

Technology:: -

Memory Size:: -

Memory Organization:: -

Memory Interface:: -

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

UPD46185364BF1-E40Y-EQ1-A FAQ

1.How can I place an order for UPD46185364BF1-E40Y-EQ1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD46185364BF1-E40Y-EQ1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD46185364BF1-E40Y-EQ1-A reliable?

The price and inventory of UPD46185364BF1-E40Y-EQ1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD46185364BF1-E40Y-EQ1-A is usually 5 days.

3.What payment methods are accepted for UPD46185364BF1-E40Y-EQ1-A?

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4.How is shipping managed for UPD46185364BF1-E40Y-EQ1-A?

UPD46185364BF1-E40Y-EQ1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD46185364BF1-E40Y-EQ1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD46185364BF1-E40Y-EQ1-A?

For technical support, including UPD46185364BF1-E40Y-EQ1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD46185364BF1-E40Y-EQ1-A requirements.

6.How does Aetrix verify that UPD46185364BF1-E40Y-EQ1-A is sourced from the original manufacturer or authorized distributors?

All UPD46185364BF1-E40Y-EQ1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD46185364BF1-E40Y-EQ1-A meets industry standards.

7.What is the process for return or replacement of UPD46185364BF1-E40Y-EQ1-A?

All UPD46185364BF1-E40Y-EQ1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD46185364BF1-E40Y-EQ1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD46185364BF1-E40Y-EQ1-A part is unused and in its original packaging.

Return procedure for UPD46185364BF1-E40Y-EQ1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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