Renesas UPD46364182BF1-E33-EQ1-A

Overview

UPD46364182BF1-E33-EQ1-A from NEC Electronics (now Renesas) is a 2,097,152-word × 18-bit synchronous double data rate static RAM with pipelined DDR operation, HSTL interface, and 1.8 V core supply. It delivers 300 MHz clock frequency (3.3 ns cycle time), supports burst-of-two transactions, and integrates PLL-based output timing control for precise flight-time matching. It is used in high-speed networking buffers and FPGA co-processor memory subsystems requiring deterministic low-latency access.

For engineers reviewing the UPD46364182BF1-E33-EQ1-A datasheet, UPD46364182BF1-E33-EQ1-A pinout, UPD46364182BF1-E33-EQ1-A application, or UPD46364182BF1-E33-EQ1-A equivalent, key selection criteria include its 2M×18 organization, 165-pin plastic BGA (13×15) package, HSTL I/O compliance, user-programmable output impedance (35–70 Ω), and dual-clock architecture (K/K# input, C/C# output clocks) enabling precise DDR timing alignment.

Technical Context

This DDR II SRAM employs full-CMOS six-transistor memory cells and integrates synchronous peripheral logic including a burst counter, DLL/PLL circuitry, and echo clocks (CQ/CQ#). All inputs are registered on the rising edge of K and K#, while outputs are synchronized to C/C#-enabling tight skew matching between clock and data delivery to receiving devices.

The device implements two-tick burst operation with linear address sequencing, supports byte-write via BW0#/BW1#, and features clock-stop capability with 20 μs recovery. Its JTAG 1149.1 test port and impedance-matching ZQ pin support system-level validation and signal integrity tuning in high-speed PCB layouts.

Key Specifications

Pinout & Package

UPD46364182BF1-E33-EQ1-A is housed in a 165-pin plastic BGA (13 × 15 mm) with ball pitch of 0.8 mm. The package uses standard JEDEC-compliant footprint and thermal pad layout optimized for four-layer PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with CY7C1551KV18-333BZI and IS45S16256F-33BLI, UPD46364182BF1-E33-EQ1-A provides true DDR-II static RAM behavior with guaranteed burst timing, echo-clock validation, and zero-refresh operation-making it uniquely suited for hard real-time embedded memory subsystems demanding sub-ns timing predictability.

Availability

UPD46364182BF1-E33-EQ1-A is available at Aetrix Electronics and suitable for high-speed networking buffers, FPGA co-processor memory subsystems, and industrial motion controller look-up tables requiring stable component supply, long-term lifecycle support, and guaranteed lead-free compliance.

Supply support for UPD46364182BF1-E33-EQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly NEC Electronics) is a global semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD46364182BF1-E33-EQ1-A belongs to Renesas' DDR II SRAM product line, engineered specifically for deterministic, low-jitter, high-bandwidth memory interfacing in FPGA- and ASIC-based systems where refresh-free operation and precise clock-data alignment are critical.

FAQ

What is the memory organization and density of UPD46364182BF1-E33-EQ1-A?

UPD46364182BF1-E33-EQ1-A is organized as 2,097,152 words × 18 bits, delivering 36 Mbit (4.5 Mbyte) of synchronous static RAM. This configuration supports efficient 18-bit data path utilization in FPGA and ASIC designs, avoiding byte-lane splitting required by narrower devices. Its density and burst-of-two operation make UPD46364182BF1-E33-EQ1-A ideal for applications needing balanced bandwidth and address space.

Does UPD46364182BF1-E33-EQ1-A require refresh cycles like DRAM?

No, UPD46364182BF1-E33-EQ1-A is a static RAM (SRAM) fabricated with full-CMOS six-transistor memory cells and does not require refresh cycles. It retains data as long as power is applied and meets DC specifications. This eliminates refresh overhead and timing uncertainty, making UPD46364182BF1-E33-EQ1-A suitable for deterministic real-time systems such as motion control and packet buffering.

What is the role of the C and C# pins on UPD46364182BF1-E33-EQ1-A?

The C and C# pins on UPD46364182BF1-E33-EQ1-A are dedicated output clocks that synchronize data output timing. They enable precise flight-time matching between clock and data signals delivered to the receiving device. When C and C# are used (instead of tying them HIGH), UPD46364182BF1-E33-EQ1-A guarantees tight skew control-critical for high-speed interfaces where setup/hold margins are constrained.

How is output impedance controlled on UPD46364182BF1-E33-EQ1-A?

UPD46364182BF1-E33-EQ1-A uses the ZQ pin to calibrate output driver impedance. Connecting ZQ to a precision resistor (RQ) to ground sets DQ, CQ, and CQ# output impedance to 0.2 × RQ. Supported range is 35–70 Ω, corresponding to RQ = 175–350 Ω. This calibration runs automatically every 20 μs after power-up and compensates for voltage/temperature drift-ensuring consistent signal integrity across UPD46364182BF1-E33-EQ1-A's operating conditions.

Can UPD46364182BF1-E33-EQ1-A operate without its internal PLL enabled?

Yes, UPD46364182BF1-E33-EQ1-A can operate with the PLL disabled by asserting DLL# = LOW, allowing use at frequencies below 120 MHz for board debug or low-power modes. However, AC/DC characteristics are not guaranteed in this mode, and read latency changes to 1.0 clock cycle. For production operation, DLL# must be HIGH (tied to VDDQ), as specified in the UPD46364182BF1-E33-EQ1-A datasheet, to ensure full timing compliance.