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Renesas UPD46364185BF1-E33-EQ1-A

Part No.:
UPD46364185BF1-E33-EQ1-A
Manufacturer:
Renesas
Category:
Memory
Package:
-
Datasheet:
AetrixUPD46364185BF1-E33-EQ1-A.pdf
Description:
DDR SRAM, 2MX18, 0.45NS
Quantity:
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Inventory:2,149

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Product details

Overview

UPD46364185BF1-E33-EQ1-A from NEC Electronics (now Renesas) is a 2,097,152-word × 18-bit synchronous DDR II SRAM with HSTL interface, 300 MHz operation (3.3 ns cycle time), 1.8 V core supply, and 165-pin plastic BGA (13 × 15 mm) packaging. It delivers pipelined double data rate reads/writes per clock cycle and supports burst-2 transactions for high-bandwidth buffering in network packet processors.

For engineers reviewing the UPD46364185BF1-E33-EQ1-A datasheet, UPD46364185BF1-E33-EQ1-A pinout, UPD46364185BF1-E33-EQ1-A application, or UPD46364185BF1-E33-EQ1-A equivalent, key selection considerations include its dual-clock timing architecture (K/K# input + C/C# output clocks), user-programmable output impedance (35–70 Ω), echo clock (CQ/CQ#) for precise data valid window alignment, and JTAG 1149.1 test port support.

Technical Context

This device implements a fully synchronous DDR II SRAM architecture with separate read/write data ports, internal burst counter, and PLL-based clock generation for stable high-frequency operation. All address, control, and data inputs are registered on rising edges of K and K#, while outputs are synchronized to C/C# or optionally to K/K# when C/C# are held high.

The memory integrates HSTL Class I I/O buffers, DLL-controlled output timing, and ZQ calibration for dynamic output impedance matching. Its two-tick burst mode enables low-latency, deterministic 2-word transfers per cycle - critical for real-time packet buffering where predictable access timing supersedes maximum density.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 2,097,152 words × 18 bits (36 Mbit total); enables 36-bit-wide data path with 2M-depth addressing for protocol stack buffering
Clock Frequency 300 MHz (3.3 ns cycle time); supports high-throughput line-rate packet processing without interleaving overhead
Supply Voltage 1.8 V ± 0.1 V core (VDD); isolated 1.4–1.8 V I/O supply (VDDQ); ensures compatibility with 1.8 V logic systems and reduces switching noise coupling
I/O Interface HSTL Class I compliant; provides controlled slew, tight timing margins, and termination-aware signaling for >200 MHz bus operation
Package 165-pin plastic BGA (13 mm × 15 mm); supports high-density routing with 0.8 mm ball pitch and thermal resistance θja = 16.5 °C/W (4-layer board, still air)
Timing Architecture Dual-clock system: K/K# for input registration, C/C# for output timing; echo clocks CQ/CQ# tightly track Q outputs (±0.1 ns variation) for receiver-side data capture
Impedance Control User-programmable output impedance (35–70 Ω) via ZQ pin; allows dynamic tuning to match PCB trace impedance and minimize reflections

Pinout & Package

165-pin plastic BGA (13 × 15 mm, 0.8 mm pitch), top view; package meets JEDEC MO-245 standards with index mark at corner A1.

Pin/Terminal Circuit Role Design Meaning
K, K# Input clock pair Registers all address/control/data on rising edges; 180° phase relationship required for precise DDR timing alignment
C, C# Output clock pair Defines output data timing reference; rising edge of C# clocks first data word, C clocks second word; can be fixed HIGH to use K/K# instead
CQ, CQ# Echo clock outputs Synchronized to Q outputs with <±0.1 ns skew; used as data-valid indication at receiver, independent of tristate state
ZQ Impedance calibration input Connects to external resistor to ground (175–350 Ω); sets Q/CQ/CQ# output impedance to 0.2×RQ; auto-calibrates every 20 μs after power-up
LD#, R, W#, BW0#, BW1# Control inputs LD# loads address/control; R,W# selects read/write; BW0#/BW1# enable byte-wise write masking for partial-word updates
A[0:19] Address inputs 20-bit synchronous address bus; registered on K rising edge; supports 2M-word depth with expansion pins (2A/10A) for larger configurations
D0–D17, Q0–Q17 Data I/O 18-bit separate input/output buses; D inputs registered on K/K# rising edges; Q outputs driven on C/C# rising edges; no bus contention
TCK, TMS, TDI, TDO JTAG test port IEEE 1149.1-compliant boundary-scan interface operating at 1.8 V; supports production testing and debug without dedicated test pads

Key Features

Feature Design Value
Pipelined DDR operation Two data words transferred per clock cycle with zero turnaround time between consecutive bursts - eliminates inter-burst dead cycles in streaming applications
Separate read/write data ports Eliminates bus arbitration and enables simultaneous read-after-write within same cycle - essential for FIFO-like packet reordering buffers
Programmable output impedance (35–70 Ω) Compensates for PCB trace impedance variations across temperature/voltage; reduces signal integrity margin loss without external termination resistors
Integrated PLL with echo clocks (CQ/CQ#) Provides wide, jitter-tolerant data valid window; echo clocks enable source-synchronous capture at receiver with sub-100 ps timing uncertainty
Two-tick burst mode Fixed 2-word burst length minimizes command overhead and guarantees deterministic latency - simplifies controller design versus variable-length burst protocols
Clock-stop capability Enters low-power state within 20 μs of clock halt; resumes full operation in ≤20 μs upon clock restart - supports dynamic power gating in bursty traffic scenarios

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing and forwarding Ethernet/IP packets in multi-gigabit switches with strict latency budgets.

IC Role / Device Role / Timing Role: High-speed, low-latency buffer between ingress parser and egress scheduler; uses burst-2 reads/writes synchronized to line-rate clock.

Use Value: Deterministic 3.3 ns cycle time and echo clocks (CQ/CQ#) ensure sub-nanosecond data valid window alignment - enabling reliable capture at 300 MHz without complex deskew circuitry.

Use Scenario: Temporary storage of voice-over-IP (VoIP) frames and signaling messages in carrier-grade DSLAMs and OLTs.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as shared memory between DSP subsystem and packet processor; leverages separate D/Q buses for concurrent access.

Use Value: 1.8 V HSTL I/O and programmable impedance (ZQ) maintain signal integrity across long backplane traces - reducing bit error rates in noisy telecom environments.

High-Speed Test Equipment Memory Real-Time Video Frame Buffer

Use Scenario: Capturing high-resolution digital signals in automated test equipment (ATE) at 300 MS/s sampling rates.

IC Role / Device Role / Timing Role: Acquisition buffer accepting parallel data from ADC front-end; uses K/K# for sample registration and C/C# for output timing to DAC or analysis engine.

Use Value: Clock-stop capability allows power-down between test sequences; 20 μs wake-up time preserves throughput while cutting standby current by >30% vs. always-on SRAM.

Use Scenario: Intermediate frame storage in broadcast-grade video scalers handling 4K@60Hz HDMI streams.

IC Role / Device Role / Timing Role: Ping-pong buffer managing read/write pointers across two active frames; exploits separate D/Q buses to avoid read-modify-write bottlenecks.

Use Value: 36 Mbit density (2M×18) supports full 4K frame (3840×2160×16bpp) in single device - minimizing PCB area and interconnect complexity vs. multiple smaller SRAMs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous DDR SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1305KV18-333BZXI 3.3 V core/VDDQ; 2M×18 organization; 333 MHz max; no ZQ calibration; LVDS outputs instead of HSTL Requires level-shifting for 1.8 V systems; lacks echo clocks and programmable impedance - needs external termination and tighter layout control Choose only if existing 3.3 V infrastructure exists and HSTL compatibility is not required
IS42S16100F-3BL SDRAM (not SRAM); 1M×16; 300 MHz; 2.5 V; requires refresh and command sequencing; no echo clocks or ZQ Higher density but non-deterministic latency due to row/column addressing and refresh overhead - unsuitable for real-time buffering Select only for cost-sensitive, non-real-time applications where latency variability is acceptable

Compared with CY7C1305KV18-333BZXI and IS42S16100F-3BL, the UPD46364185BF1-E33-EQ1-A offers deterministic sub-ns timing via echo clocks, 1.8 V HSTL compatibility, and on-die impedance tuning - making it uniquely suited for latency-critical, high-reliability packet and video buffering where signal integrity and timing predictability are non-negotiable.

Availability

UPD46364185BF1-E33-EQ1-A is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and high-speed test equipment requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for UPD46364185BF1-E33-EQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation (formerly NEC Electronics) is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The UPD46364185BF1-E33-EQ1-A belongs to Renesas' DDR II SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in networking and telecom infrastructure where sub-cycle latency, signal integrity, and thermal reliability are critical.

FAQ

What is the exact memory organization and density of the UPD46364185BF1-E33-EQ1-A?

The UPD46364185BF1-E33-EQ1-A is organized as 2,097,152 words × 18 bits, delivering a total capacity of 36 Mbit. This configuration supports 18-bit-wide data paths with 2M-depth addressing - optimized for applications like packet buffering where balanced width and depth simplify controller logic and reduce external bus width.

Does the UPD46364185BF1-E33-EQ1-A require an external PLL or clock synthesizer?

No, the UPD46364185BF1-E33-EQ1-A integrates an on-die PLL for output timing generation. It locks to the K input clock within 20 μs and uses that reference to drive C/C# and CQ/CQ# outputs. An external PLL is unnecessary unless system-level clock distribution demands additional fanout or jitter cleaning beyond the device's built-in capability.

How does the ZQ pin function on the UPD46364185BF1-E33-EQ1-A, and what resistor value should be used?

The ZQ pin on the UPD46364185BF1-E33-EQ1-A connects to an external resistor to ground for output impedance calibration. Using a 240 Ω resistor yields nominal 48 Ω output impedance (0.2 × 240 Ω), matching standard 50 Ω PCB traces. The device auto-calibrates every 20 μs after power-up and tracks voltage/temperature drift - eliminating manual trimming or fixed termination networks.

Can the UPD46364185BF1-E33-EQ1-A operate without the C and C# output clocks?

Yes - the UPD46364185BF1-E33-EQ1-A can operate with C and C# tied HIGH, causing Q outputs to be synchronized directly to K and K# rising edges instead. However, this forfeits the flight-time compensation and skew-matching benefits of the dedicated output clock pair, reducing timing margin in high-speed or long-trace applications.

What is the purpose of the DLL# pin on the UPD46364185BF1-E33-EQ1-A, and how should it be configured?

The DLL# pin disables the internal PLL when pulled LOW, allowing low-frequency debugging (below 120 MHz) without PLL lock requirements. For normal operation at 300 MHz, DLL# must be HIGH - typically tied to VDDQ via a ≤10 kΩ resistor. Leaving DLL# floating or connecting it to GND violates specifications and risks undefined behavior.

UPD46364185BF1-E33-EQ1-A Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
-
Memory Format:
-
Technology:
-
Memory Size:
-
Memory Organization:
-
Memory Interface:
-
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

UPD46364185BF1-E33-EQ1-A FAQ

1.How can I place an order for UPD46364185BF1-E33-EQ1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD46364185BF1-E33-EQ1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD46364185BF1-E33-EQ1-A reliable?

The price and inventory of UPD46364185BF1-E33-EQ1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD46364185BF1-E33-EQ1-A is usually 5 days.

3.What payment methods are accepted for UPD46364185BF1-E33-EQ1-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD46364185BF1-E33-EQ1-A transactions.

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4.How is shipping managed for UPD46364185BF1-E33-EQ1-A?

UPD46364185BF1-E33-EQ1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD46364185BF1-E33-EQ1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD46364185BF1-E33-EQ1-A?

For technical support, including UPD46364185BF1-E33-EQ1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD46364185BF1-E33-EQ1-A requirements.

6.How does Aetrix verify that UPD46364185BF1-E33-EQ1-A is sourced from the original manufacturer or authorized distributors?

All UPD46364185BF1-E33-EQ1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD46364185BF1-E33-EQ1-A meets industry standards.

7.What is the process for return or replacement of UPD46364185BF1-E33-EQ1-A?

All UPD46364185BF1-E33-EQ1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD46364185BF1-E33-EQ1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD46364185BF1-E33-EQ1-A part is unused and in its original packaging.

Return procedure for UPD46364185BF1-E33-EQ1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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