Renesas UPD46364185BF1-E33-EQ1-A
- Part No.:
- UPD46364185BF1-E33-EQ1-A
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
UPD46364185BF1-E33-EQ1-A.pdf
- Description:
- DDR SRAM, 2MX18, 0.45NS
- Quantity:
- Payment:

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Product details
Overview
UPD46364185BF1-E33-EQ1-A from NEC Electronics (now Renesas) is a 2,097,152-word × 18-bit synchronous DDR II SRAM with HSTL interface, 300 MHz operation (3.3 ns cycle time), 1.8 V core supply, and 165-pin plastic BGA (13 × 15 mm) packaging. It delivers pipelined double data rate reads/writes per clock cycle and supports burst-2 transactions for high-bandwidth buffering in network packet processors.
For engineers reviewing the UPD46364185BF1-E33-EQ1-A datasheet, UPD46364185BF1-E33-EQ1-A pinout, UPD46364185BF1-E33-EQ1-A application, or UPD46364185BF1-E33-EQ1-A equivalent, key selection considerations include its dual-clock timing architecture (K/K# input + C/C# output clocks), user-programmable output impedance (35–70 Ω), echo clock (CQ/CQ#) for precise data valid window alignment, and JTAG 1149.1 test port support.
Technical Context
This device implements a fully synchronous DDR II SRAM architecture with separate read/write data ports, internal burst counter, and PLL-based clock generation for stable high-frequency operation. All address, control, and data inputs are registered on rising edges of K and K#, while outputs are synchronized to C/C# or optionally to K/K# when C/C# are held high.
The memory integrates HSTL Class I I/O buffers, DLL-controlled output timing, and ZQ calibration for dynamic output impedance matching. Its two-tick burst mode enables low-latency, deterministic 2-word transfers per cycle - critical for real-time packet buffering where predictable access timing supersedes maximum density.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2,097,152 words × 18 bits (36 Mbit total); enables 36-bit-wide data path with 2M-depth addressing for protocol stack buffering |
| Clock Frequency | 300 MHz (3.3 ns cycle time); supports high-throughput line-rate packet processing without interleaving overhead |
| Supply Voltage | 1.8 V ± 0.1 V core (VDD); isolated 1.4–1.8 V I/O supply (VDDQ); ensures compatibility with 1.8 V logic systems and reduces switching noise coupling |
| I/O Interface | HSTL Class I compliant; provides controlled slew, tight timing margins, and termination-aware signaling for >200 MHz bus operation |
| Package | 165-pin plastic BGA (13 mm × 15 mm); supports high-density routing with 0.8 mm ball pitch and thermal resistance θja = 16.5 °C/W (4-layer board, still air) |
| Timing Architecture | Dual-clock system: K/K# for input registration, C/C# for output timing; echo clocks CQ/CQ# tightly track Q outputs (±0.1 ns variation) for receiver-side data capture |
| Impedance Control | User-programmable output impedance (35–70 Ω) via ZQ pin; allows dynamic tuning to match PCB trace impedance and minimize reflections |
Pinout & Package
165-pin plastic BGA (13 × 15 mm, 0.8 mm pitch), top view; package meets JEDEC MO-245 standards with index mark at corner A1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| K, K# | Input clock pair | Registers all address/control/data on rising edges; 180° phase relationship required for precise DDR timing alignment |
| C, C# | Output clock pair | Defines output data timing reference; rising edge of C# clocks first data word, C clocks second word; can be fixed HIGH to use K/K# instead |
| CQ, CQ# | Echo clock outputs | Synchronized to Q outputs with <±0.1 ns skew; used as data-valid indication at receiver, independent of tristate state |
| ZQ | Impedance calibration input | Connects to external resistor to ground (175–350 Ω); sets Q/CQ/CQ# output impedance to 0.2×RQ; auto-calibrates every 20 μs after power-up |
| LD#, R, W#, BW0#, BW1# | Control inputs | LD# loads address/control; R,W# selects read/write; BW0#/BW1# enable byte-wise write masking for partial-word updates |
| A[0:19] | Address inputs | 20-bit synchronous address bus; registered on K rising edge; supports 2M-word depth with expansion pins (2A/10A) for larger configurations |
| D0–D17, Q0–Q17 | Data I/O | 18-bit separate input/output buses; D inputs registered on K/K# rising edges; Q outputs driven on C/C# rising edges; no bus contention |
| TCK, TMS, TDI, TDO | JTAG test port | IEEE 1149.1-compliant boundary-scan interface operating at 1.8 V; supports production testing and debug without dedicated test pads |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined DDR operation | Two data words transferred per clock cycle with zero turnaround time between consecutive bursts - eliminates inter-burst dead cycles in streaming applications |
| Separate read/write data ports | Eliminates bus arbitration and enables simultaneous read-after-write within same cycle - essential for FIFO-like packet reordering buffers |
| Programmable output impedance (35–70 Ω) | Compensates for PCB trace impedance variations across temperature/voltage; reduces signal integrity margin loss without external termination resistors |
| Integrated PLL with echo clocks (CQ/CQ#) | Provides wide, jitter-tolerant data valid window; echo clocks enable source-synchronous capture at receiver with sub-100 ps timing uncertainty |
| Two-tick burst mode | Fixed 2-word burst length minimizes command overhead and guarantees deterministic latency - simplifies controller design versus variable-length burst protocols |
| Clock-stop capability | Enters low-power state within 20 μs of clock halt; resumes full operation in ≤20 μs upon clock restart - supports dynamic power gating in bursty traffic scenarios |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing and forwarding Ethernet/IP packets in multi-gigabit switches with strict latency budgets. IC Role / Device Role / Timing Role: High-speed, low-latency buffer between ingress parser and egress scheduler; uses burst-2 reads/writes synchronized to line-rate clock. Use Value: Deterministic 3.3 ns cycle time and echo clocks (CQ/CQ#) ensure sub-nanosecond data valid window alignment - enabling reliable capture at 300 MHz without complex deskew circuitry. |
Use Scenario: Temporary storage of voice-over-IP (VoIP) frames and signaling messages in carrier-grade DSLAMs and OLTs. IC Role / Device Role / Timing Role: Dual-port SRAM acting as shared memory between DSP subsystem and packet processor; leverages separate D/Q buses for concurrent access. Use Value: 1.8 V HSTL I/O and programmable impedance (ZQ) maintain signal integrity across long backplane traces - reducing bit error rates in noisy telecom environments. |
| High-Speed Test Equipment Memory | Real-Time Video Frame Buffer |
Use Scenario: Capturing high-resolution digital signals in automated test equipment (ATE) at 300 MS/s sampling rates. IC Role / Device Role / Timing Role: Acquisition buffer accepting parallel data from ADC front-end; uses K/K# for sample registration and C/C# for output timing to DAC or analysis engine. Use Value: Clock-stop capability allows power-down between test sequences; 20 μs wake-up time preserves throughput while cutting standby current by >30% vs. always-on SRAM. |
Use Scenario: Intermediate frame storage in broadcast-grade video scalers handling 4K@60Hz HDMI streams. IC Role / Device Role / Timing Role: Ping-pong buffer managing read/write pointers across two active frames; exploits separate D/Q buses to avoid read-modify-write bottlenecks. Use Value: 36 Mbit density (2M×18) supports full 4K frame (3840×2160×16bpp) in single device - minimizing PCB area and interconnect complexity vs. multiple smaller SRAMs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous DDR SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1305KV18-333BZXI | 3.3 V core/VDDQ; 2M×18 organization; 333 MHz max; no ZQ calibration; LVDS outputs instead of HSTL | Requires level-shifting for 1.8 V systems; lacks echo clocks and programmable impedance - needs external termination and tighter layout control | Choose only if existing 3.3 V infrastructure exists and HSTL compatibility is not required |
| IS42S16100F-3BL | SDRAM (not SRAM); 1M×16; 300 MHz; 2.5 V; requires refresh and command sequencing; no echo clocks or ZQ | Higher density but non-deterministic latency due to row/column addressing and refresh overhead - unsuitable for real-time buffering | Select only for cost-sensitive, non-real-time applications where latency variability is acceptable |
Compared with CY7C1305KV18-333BZXI and IS42S16100F-3BL, the UPD46364185BF1-E33-EQ1-A offers deterministic sub-ns timing via echo clocks, 1.8 V HSTL compatibility, and on-die impedance tuning - making it uniquely suited for latency-critical, high-reliability packet and video buffering where signal integrity and timing predictability are non-negotiable.
Availability
UPD46364185BF1-E33-EQ1-A is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and high-speed test equipment requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.
Supply support for UPD46364185BF1-E33-EQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation (formerly NEC Electronics) is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.
The UPD46364185BF1-E33-EQ1-A belongs to Renesas' DDR II SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in networking and telecom infrastructure where sub-cycle latency, signal integrity, and thermal reliability are critical.
FAQ
What is the exact memory organization and density of the UPD46364185BF1-E33-EQ1-A?
The UPD46364185BF1-E33-EQ1-A is organized as 2,097,152 words × 18 bits, delivering a total capacity of 36 Mbit. This configuration supports 18-bit-wide data paths with 2M-depth addressing - optimized for applications like packet buffering where balanced width and depth simplify controller logic and reduce external bus width.
Does the UPD46364185BF1-E33-EQ1-A require an external PLL or clock synthesizer?
No, the UPD46364185BF1-E33-EQ1-A integrates an on-die PLL for output timing generation. It locks to the K input clock within 20 μs and uses that reference to drive C/C# and CQ/CQ# outputs. An external PLL is unnecessary unless system-level clock distribution demands additional fanout or jitter cleaning beyond the device's built-in capability.
How does the ZQ pin function on the UPD46364185BF1-E33-EQ1-A, and what resistor value should be used?
The ZQ pin on the UPD46364185BF1-E33-EQ1-A connects to an external resistor to ground for output impedance calibration. Using a 240 Ω resistor yields nominal 48 Ω output impedance (0.2 × 240 Ω), matching standard 50 Ω PCB traces. The device auto-calibrates every 20 μs after power-up and tracks voltage/temperature drift - eliminating manual trimming or fixed termination networks.
Can the UPD46364185BF1-E33-EQ1-A operate without the C and C# output clocks?
Yes - the UPD46364185BF1-E33-EQ1-A can operate with C and C# tied HIGH, causing Q outputs to be synchronized directly to K and K# rising edges instead. However, this forfeits the flight-time compensation and skew-matching benefits of the dedicated output clock pair, reducing timing margin in high-speed or long-trace applications.
What is the purpose of the DLL# pin on the UPD46364185BF1-E33-EQ1-A, and how should it be configured?
The DLL# pin disables the internal PLL when pulled LOW, allowing low-frequency debugging (below 120 MHz) without PLL lock requirements. For normal operation at 300 MHz, DLL# must be HIGH - typically tied to VDDQ via a ≤10 kΩ resistor. Leaving DLL# floating or connecting it to GND violates specifications and risks undefined behavior.
UPD46364185BF1-E33-EQ1-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPD46364185BF1-E33-EQ1-A FAQ
1.How can I place an order for UPD46364185BF1-E33-EQ1-A through Aetrix?
Please submit a Request for Quotation (RFQ) for UPD46364185BF1-E33-EQ1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPD46364185BF1-E33-EQ1-A reliable?
The price and inventory of UPD46364185BF1-E33-EQ1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD46364185BF1-E33-EQ1-A is usually 5 days.
3.What payment methods are accepted for UPD46364185BF1-E33-EQ1-A?
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5.How can I obtain technical support or documentation for UPD46364185BF1-E33-EQ1-A?
For technical support, including UPD46364185BF1-E33-EQ1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD46364185BF1-E33-EQ1-A requirements.
6.How does Aetrix verify that UPD46364185BF1-E33-EQ1-A is sourced from the original manufacturer or authorized distributors?
All UPD46364185BF1-E33-EQ1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD46364185BF1-E33-EQ1-A meets industry standards.
7.What is the process for return or replacement of UPD46364185BF1-E33-EQ1-A?
All UPD46364185BF1-E33-EQ1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD46364185BF1-E33-EQ1-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPD46364185BF1-E33-EQ1-A part is unused and in its original packaging.
Return procedure for UPD46364185BF1-E33-EQ1-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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