Renesas UPD46365084BF1-E40-EQ1-A

Overview

UPD46365084BF1-E40-EQ1-A from Renesas Electronics is a 4,194,304-word × 8-bit synchronous Quad Data Rate II (QDR II) SRAM with HSTL interface, 1.8 V core supply, 4.0 ns clock cycle time (250 MHz), and 165-pin plastic BGA (13 × 15) packaging. It supports concurrent read/write operations, four-word burst, and clock-stop capability for low-power standby in high-bandwidth memory subsystems such as network packet buffers and FPGA co-processor caches.

For engineers reviewing the UPD46365084BF1-E40-EQ1-A datasheet, UPD46365084BF1-E40-EQ1-A pinout, UPD46365084BF1-E40-EQ1-A application, or UPD46365084BF1-E40-EQ1-A equivalent, this page delivers verified specifications, validated pin functions, confirmed QDR II timing architecture, real-world use cases in telecom infrastructure, and two rigorously cross-referenced alternative parts with documented functional and packaging differences.

Technical Context

The UPD46365084BF1-E40-EQ1-A implements a true dual-port QDR II architecture with physically separate read and write data paths, enabling simultaneous read and write transactions without bus contention. Its input clock pair (K/K#) registers all control and address inputs on the rising edge of K, while data is latched on both K and K# rising edges during writes.

Output timing is governed by dedicated C/C# clocks synchronized to data delivery, with echo clocks CQ/CQ# tightly matched to output data edges for precise flight-time compensation. The integrated PLL enables wide output data valid windows and supports frequency scaling up to 300 MHz, though this specific variant is rated for 250 MHz operation with 4.0 ns cycle time.

Key Specifications

Pinout & Package

UPD46365084BF1-E40-EQ1-A is housed in a 165-pin plastic BGA package (13 × 15 mm grid, 0.8 mm pitch) with standard top-side marking and index corner defined per JEDEC MO-270. Pin functions are fully validated per Renesas R10DS0090EJ0400 Rev.4.00 datasheet Page 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2665KV18-400BZI and AS7C33256P-15JCIN, the UPD46365084BF1-E40-EQ1-A uniquely balances 8-bit width, 250 MHz QDR II performance, and industry-standard BGA packaging - making it optimal for cost-sensitive, space-constrained telecom and test equipment where precise timing and dual-port concurrency are mandatory.

Availability

UPD46365084BF1-E40-EQ1-A is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor caching, and telecom baseband memory applications requiring stable component supply, long-term lifecycle support, and guaranteed lead-free compliance.

Supply support for UPD46365084BF1-E40-EQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD46365084BF1-E40-EQ1-A belongs to Renesas' QDR II SRAM product line, engineered specifically for high-bandwidth, low-latency memory subsystems in networking, telecommunications, and high-performance computing where deterministic dual-port access and DDR timing are critical.

FAQ

What is the maximum operating frequency of the UPD46365084BF1-E40-EQ1-A?

The UPD46365084BF1-E40-EQ1-A is rated for a 4.0 ns clock cycle time, corresponding to a maximum operating frequency of 250 MHz. This specification is validated under recommended DC and AC operating conditions (TA = 0 to 70°C, VDD = 1.8 ± 0.1 V). While the QDR II architecture supports higher speeds (e.g., 300 MHz in the -E33 variant), the -E40 suffix explicitly denotes the 250 MHz grade of the UPD46365084BF1-E40-EQ1-A.

Does the UPD46365084BF1-E40-EQ1-A support concurrent read and write operations?

Yes, the UPD46365084BF1-E40-EQ1-A implements a true dual-port QDR II architecture with physically independent read and write data paths. This allows simultaneous read and write transactions - for example, reading from address A while writing to address B - without bus contention or arbitration delay, a key requirement in real-time packet processing and FPGA accelerator memory subsystems.

What is the function of the NW0# and NW1# pins on the UPD46365084BF1-E40-EQ1-A?

The NW0# and NW1# pins on the UPD46365084BF1-E40-EQ1-A are active-low nibble write select signals. NW0# controls write enable for data bits D0–D3, and NW1# controls D4–D7. When both are LOW, all 8 bits are written; when only one is LOW, only its associated nibble is updated - enabling partial-word writes without disturbing other data in the same word location.

Is the UPD46365084BF1-E40-EQ1-A compatible with JTAG boundary-scan testing?

Yes, the UPD46365084BF1-E40-EQ1-A integrates a fully compliant IEEE 1149.1 JTAG test access port with TDI, TDO, TCK, and TMS pins. These signals operate at 1.8 V I/O level and support boundary-scan testing for interconnect verification and debug in high-density PCB assemblies - provided the pins are properly routed and terminated per JTAG specification.

What power supply sequencing is required for reliable startup of the UPD46365084BF1-E40-EQ1-A?

The UPD46365084BF1-E40-EQ1-A requires strict power-on sequencing: apply VSS first, then VDD and VDDQ (simultaneously, with VDDQ ≤ VDD + 0.5 V), followed by VREF, and finally input signals. After power stabilization, a stable clock must be applied for ≥20 μs to lock the PLL, followed by at least four NOP cycles (R# = W# = HIGH) before initiating read/write operations.