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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas UPD46365092BF1-E40-EQ1-A

Name: UPD46365092BF1-E40-EQ1-A
Brand: Renesas
SKU: UPD46365092BF1-E40-EQ1-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPD46365092BF1-E40-EQ1-A

Manufacturer:: Renesas

Category:: Memory

Package:: -

Datasheet:: UPD46365092BF1-E40-EQ1-A.pdf

Description:: QDR SRAM, 4MX9, 0.45NS

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Product details

Overview

UPD46365092BF1-E40-EQ1-A from NEC Electronics (now Renesas) is a 4,194,304-word × 9-bit synchronous Quad Data Rate II (QDR II) SRAM with HSTL interface, 1.8 V core supply, 4.0 ns clock cycle time (250 MHz), and 165-pin plastic BGA (13 × 15) packaging. It supports concurrent read/write operations, burst-2 transfers, and clock-stop mode for low-power idle states in high-bandwidth memory subsystems.

For engineers reviewing the UPD46365092BF1-E40-EQ1-A datasheet, UPD46365092BF1-E40-EQ1-A pinout, UPD46365092BF1-E40-EQ1-A application, or UPD46365092BF1-E40-EQ1-A equivalent, key selection considerations include its QDR II timing architecture, dual-clock (K/K# input, C/C# output) synchronization, user-programmable output impedance (35–70 Ω), JTAG 1149.1 test access, and HSTL Class I compliance for high-speed bus interfacing.

Technical Context

The UPD46365092BF1-E40-EQ1-A implements a true dual-port QDR II architecture with physically separate read and write data paths, enabling simultaneous read and write transactions without arbitration. Its internal PLL provides a wide output data valid window and supports future frequency scaling up to 300 MHz.

It uses two independent clock pairs: K/K# for address/control/data input registration on rising edges, and C/C# for precise output timing alignment-ensuring matched flight time and minimal clock skew between data and echo clocks (CQ/CQ#). The device also features internally self-timed write control and DLL#-controlled PLL disable for debug-mode operation at sub-250 MHz frequencies.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	4,194,304 words × 9 bits (36 Mbit total)
Clock Cycle Time	4.0 ns - enables 250 MHz DDR operation with guaranteed timing margins
Supply Voltage	1.8 V ±0.1 V core (VDD); isolated 1.4–1.8 V I/O supply (VDDQ)
Interface Standard	HSTL Class I - ensures signal integrity at 250 MHz with controlled impedance outputs
Package	165-pin plastic BGA (13 mm × 15 mm, 0.8 mm pitch)
Burst Operation	Fixed 2-word burst - delivers two consecutive data words per clock cycle for 100% bus utilization
Operating Temperature	0°C to +70°C - qualified for commercial/industrial ambient environments

Pinout & Package

UPD46365092BF1-E40-EQ1-A is housed in a 165-pin plastic BGA (13 × 15 array, 0.8 mm pitch) with exposed thermal pad. Pin functions are defined per top-view layout in datasheet Rev.4.00 Page 3, with dedicated HSTL-compatible I/O, dual clock domains (K/K#, C/C#), echo clocks (CQ/CQ#), byte write control (BW0#), and JTAG test access (TMS/TCK/TDI/TDO).

Pin/Terminal	Circuit Role	Design Meaning
K, K#	Input Clock Pair	Rising-edge-triggered inputs: K latches read addresses/controls; K# latches write addresses/data - 180° phase relationship required for timing accuracy
C, C#	Output Clock Pair	Provide user-controlled output timing reference; rising edges define data valid windows for Q0–Q8 and echo clocks CQ/CQ#
A[0–20]	Address Inputs	21-bit synchronous address bus registered on K rising edge for READ, K# rising edge for WRITE
D0–D8	Data Inputs	9-bit write data path synchronized to K/K# rising edges; supports byte-write via BW0#
Q0–Q8	Data Outputs	9-bit read data path synchronized to C/C# rising edges; high-impedance when deselected
R#, W#	Command Inputs	Active-low synchronous controls: R# initiates read burst; W# initiates write burst; both must meet setup/hold to K
BW0#	Byte Write Select	Active-low signal enabling full 9-bit write; LOW = write D0–D8, HIGH = no write (NOP)
ZQ	Impedance Calibration Input	Connects to external resistor to ground to tune Q/CQ/CQ# output impedance to 35–70 Ω system bus
VREF	HSTL Reference	Internal reference at VDDQ/2 (0.68–0.95 V) for HSTL input buffer threshold setting
TMS, TCK, TDI, TDO	JTAG Test Interface	IEEE 1149.1-compliant boundary-scan port operating at 1.8 V I/O level

Key Features

Feature	Design Value
Concurrent Read/Write Ports	Enables simultaneous memory access without arbitration delay - critical for packet buffering and real-time DSP applications
PLL-Based Output Timing Control	Generates stable C/C# clocks with tight skew matching to Q/CQ outputs, eliminating external timing compensation circuits
User-Programmable Output Impedance	Adjusts drive strength via ZQ pin to match PCB trace impedance (35–70 Ω), reducing signal reflections and improving eye margin
Two-Tick Burst Architecture	Delivers two data words per clock cycle - doubles effective bandwidth over single-data-rate SRAMs at same clock frequency
Clock-Stop Capability	Enters low-power state with clocks halted; resumes normal operation within 20 μs - ideal for power-gated subsystems

Applications

Network Packet Buffering	High-Speed Test Equipment Memory
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches and routers. IC Role / Device Role / Timing Role: QDR II SRAM acting as dual-ported first-level packet buffer with zero-latency concurrent read/write access. Use Value: 250 MHz burst-2 operation delivers 4.5 Gbps sustained bandwidth (9 bits × 2 × 250 MHz), meeting line-rate buffering requirements for 10GbE interfaces.	Use Scenario: Capturing high-fidelity waveform samples in automated test equipment (ATE) during IC functional validation. IC Role / Device Role / Timing Role: High-speed acquisition memory synchronizing sample capture and playback using independent read/write ports. Use Value: 4.0 ns cycle time and HSTL interface ensure clean signal integrity at 250 MHz sampling rates, minimizing jitter-induced measurement error.
Baseband Signal Processing	FPGA Co-Processor Cache
Use Scenario: Serving as shared scratchpad memory between multiple DSP cores in wireless baseband processing units. IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory supporting parallel FFT and channel estimation algorithms. Use Value: Concurrent read/write capability eliminates memory contention stalls, improving algorithm throughput by up to 40% versus single-port SRAM.	Use Scenario: Providing high-bandwidth local cache for FPGA-based accelerators in AI inference or video encoding pipelines. IC Role / Device Role / Timing Role: Off-chip cache bridging FPGA logic fabric to external DDR memory, absorbing bursty traffic patterns. Use Value: 165-pin BGA package enables dense routing; 1.8 V core reduces power density vs. older 3.3 V QDR devices, easing thermal management.

Network Packet Buffering

High-Speed Test Equipment Memory

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches and routers.

IC Role / Device Role / Timing Role: QDR II SRAM acting as dual-ported first-level packet buffer with zero-latency concurrent read/write access.

Use Value: 250 MHz burst-2 operation delivers 4.5 Gbps sustained bandwidth (9 bits × 2 × 250 MHz), meeting line-rate buffering requirements for 10GbE interfaces.

Use Scenario: Capturing high-fidelity waveform samples in automated test equipment (ATE) during IC functional validation.

IC Role / Device Role / Timing Role: High-speed acquisition memory synchronizing sample capture and playback using independent read/write ports.

Use Value: 4.0 ns cycle time and HSTL interface ensure clean signal integrity at 250 MHz sampling rates, minimizing jitter-induced measurement error.

Baseband Signal Processing

FPGA Co-Processor Cache

Use Scenario: Serving as shared scratchpad memory between multiple DSP cores in wireless baseband processing units.

IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory supporting parallel FFT and channel estimation algorithms.

Use Value: Concurrent read/write capability eliminates memory contention stalls, improving algorithm throughput by up to 40% versus single-port SRAM.

Use Scenario: Providing high-bandwidth local cache for FPGA-based accelerators in AI inference or video encoding pipelines.

IC Role / Device Role / Timing Role: Off-chip cache bridging FPGA logic fabric to external DDR memory, absorbing bursty traffic patterns.

Use Value: 165-pin BGA package enables dense routing; 1.8 V core reduces power density vs. older 3.3 V QDR devices, easing thermal management.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C2665KV18-400BZC	2M × 18 organization (36 Mbit), 400 MHz (2.5 ns), 1.8 V core, 165-pin BGA	Higher speed but narrower 18-bit bus vs. UPD46365092BF1-E40-EQ1-A's 9-bit × 4M configuration	Select when system requires higher bandwidth with wider data path and can accommodate different address/data mapping
AS7C3368A-25JIN	4M × 9 organization, 250 MHz, 3.3 V core, 100-pin TQFP - asynchronous SRAM, not QDR II	Lacks QDR II dual-clock architecture, burst operation, and HSTL interface - incompatible timing model	Consider only for legacy designs where QDR II features are unnecessary and voltage compatibility permits

Compared with CY7C2665KV18-400BZC and AS7C3368A-25JIN, the UPD46365092BF1-E40-EQ1-A uniquely balances 4M × 9 depth, 250 MHz QDR II performance, and HSTL signal integrity in a standard 165-pin BGA - making it optimal for cost-sensitive, space-constrained systems requiring deterministic dual-port access without over-specifying speed or width.

Availability

UPD46365092BF1-E40-EQ1-A is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment memory, baseband signal processing, and FPGA co-processor cache applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for UPD46365092BF1-E40-EQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation (formerly NEC Electronics) is a global semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The UPD46365092BF1-E40-EQ1-A belongs to Renesas' QDR II SRAM product line, designed specifically for high-bandwidth, low-latency memory subsystems in networking infrastructure, test instrumentation, and digital signal processing where deterministic dual-port access and HSTL signal integrity are critical.

FAQ

What is the memory organization and total capacity of the UPD46365092BF1-E40-EQ1-A?

The UPD46365092BF1-E40-EQ1-A is organized as 4,194,304 words × 9 bits, delivering a total capacity of 36 Mbit (4.5 MByte). This configuration supports efficient byte-aligned data storage while maintaining compatibility with 9-bit bus architectures common in legacy telecom and test equipment designs. The UPD46365092BF1-E40-EQ1-A uses a synchronous QDR II interface with burst-2 operation to maximize effective bandwidth.

Does the UPD46365092BF1-E40-EQ1-A support concurrent read and write operations?

Yes, the UPD46365092BF1-E40-EQ1-A implements true concurrent read and write operations using physically separate data paths. A read transaction on Q0–Q8 and a write transaction on D0–D8 can occur simultaneously without arbitration delay or bus turnaround overhead. This capability is enabled by its QDR II architecture and is confirmed in the datasheet truth table and block diagram. The UPD46365092BF1-E40-EQ1-A maintains full timing compliance under concurrent access conditions.

What are the power supply requirements for the UPD46365092BF1-E40-EQ1-A?

UPD46365092BF1-E40-EQ1-A requires two distinct supplies: VDD = 1.8 V ±0.1 V for core logic, and VDDQ = 1.4 V to 1.8 V (isolated) for I/O buffers. VREF must be supplied at nominally VDDQ/2 (0.68–0.95 V). Power sequencing mandates VSS → VDD → VDDQ → VREF → VIN, with VDD and VDDQ applied simultaneously only if VDDQ does not exceed VDD by more than 0.5 V. The UPD46365092BF1-E40-EQ1-A draws 510 mA typical operating current at 250 MHz.

How is output impedance controlled on the UPD46365092BF1-E40-EQ1-A?

Output impedance on the UPD46365092BF1-E40-EQ1-A is controlled via the ZQ pin, which connects to an external resistor to ground. The device tunes Q, CQ, and CQ# driver impedance to 0.2 × RQ, yielding a programmable range of 35–70 Ω. Direct connection of ZQ to VDDQ minimizes impedance. Calibration occurs automatically every 20 μs after power-up to compensate for voltage/temperature drift. The UPD46365092BF1-E40-EQ1-A does not support dynamic impedance adjustment during operation.

Is the UPD46365092BF1-E40-EQ1-A compatible with JTAG boundary-scan testing?

Yes, the UPD46365092BF1-E40-EQ1-A integrates a fully compliant IEEE 1149.1 JTAG test access port with TMS, TCK, TDI, and TDO pins operating at 1.8 V I/O level. These signals support boundary-scan testing for interconnect verification and in-system programming. If JTAG is unused, TMS/TDI may be left unconnected, but TCK must be tied to VSS. The UPD46365092BF1-E40-EQ1-A implements mandatory JTAG instructions including SAMPLE/PRELOAD, EXTEST, and BYPASS.

UPD46365092BF1-E40-EQ1-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Programmable:: Not Verified

Memory Type:: -

Memory Format:: -

Technology:: -

Memory Size:: -

Memory Organization:: -

Memory Interface:: -

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

UPD46365092BF1-E40-EQ1-A FAQ

1.How can I place an order for UPD46365092BF1-E40-EQ1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD46365092BF1-E40-EQ1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD46365092BF1-E40-EQ1-A reliable?

The price and inventory of UPD46365092BF1-E40-EQ1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD46365092BF1-E40-EQ1-A is usually 5 days.

3.What payment methods are accepted for UPD46365092BF1-E40-EQ1-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD46365092BF1-E40-EQ1-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPD46365092BF1-E40-EQ1-A?

UPD46365092BF1-E40-EQ1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD46365092BF1-E40-EQ1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD46365092BF1-E40-EQ1-A?

For technical support, including UPD46365092BF1-E40-EQ1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD46365092BF1-E40-EQ1-A requirements.

6.How does Aetrix verify that UPD46365092BF1-E40-EQ1-A is sourced from the original manufacturer or authorized distributors?

All UPD46365092BF1-E40-EQ1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD46365092BF1-E40-EQ1-A meets industry standards.

7.What is the process for return or replacement of UPD46365092BF1-E40-EQ1-A?

All UPD46365092BF1-E40-EQ1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD46365092BF1-E40-EQ1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD46365092BF1-E40-EQ1-A part is unused and in its original packaging.

Return procedure for UPD46365092BF1-E40-EQ1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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