Renesas UPD46365094BF1-E40-EQ1-A
- Part No.:
- UPD46365094BF1-E40-EQ1-A
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
UPD46365094BF1-E40-EQ1-A.pdf
- Description:
- QDR SRAM, 4MX9, 0.45NS
- Quantity:
- Payment:

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Product details
Overview
UPD46365094BF1-E40-EQ1-A from NEC Electronics (now Renesas) is a 4,194,304-word × 9-bit synchronous Quad Data Rate II (QDR-II) SRAM with HSTL interface, 4-word burst operation, and 1.8 V core supply. It delivers 250 MHz clock frequency (4.0 ns cycle time), supports concurrent read/write ports, and is packaged in a 165-pin plastic BGA (13 × 15 mm) for high-density memory subsystems in network packet buffers and baseband processors.
For engineers reviewing the UPD46365094BF1-E40-EQ1-A datasheet, UPD46365094BF1-E40-EQ1-A pinout, UPD46365094BF1-E40-EQ1-A application, or UPD46365094BF1-E40-EQ1-A equivalent, key selection considerations include its 4M × 9 organization, dual-clock (K/K# and C/C#) timing architecture, user-programmable output impedance (35–70 Ω), clock-stop capability (20 μs recovery), and JTAG 1149.1 test access.
Technical Context
This QDR-II SRAM employs separate independent read and write data ports with concurrent transaction support, enabling simultaneous access without bus contention. Its internal PLL provides wide output data valid window and enables future frequency scaling up to 300 MHz.
The device uses HSTL Class I I/O with VREF-based input thresholding and supports echo clocks (CQ/CQ#) tightly matched to data outputs for precise timing closure. All control and address inputs are registered on the rising edge of K, while data is registered on both K and K# rising edges during writes and synchronized to C/C# rising edges during reads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Organization | 4,194,304 words × 9 bits - supports 36-Mbit density with byte-wide data path plus parity bit for error detection. |
| Cycle time / Frequency | 4.0 ns / 250 MHz - defines maximum sustained throughput of 1.0 Gb/s per data pin under burst operation. |
| Supply voltage | 1.8 ± 0.1 V core (VDD), 1.4–1.8 V I/O (VDDQ) - requires tight regulation and sequencing per power-on requirements. |
| Interface standard | HSTL Class I - ensures signal integrity at high speed with controlled-impedance drivers and VREF-referenced receivers. |
| Burst length | 4-word burst - reduces address bus frequency by 4×, simplifying controller design and minimizing routing congestion. |
| Operating temperature | 0 °C to +70 °C - qualified for commercial/industrial ambient environments without extended thermal derating. |
| Package | 165-pin plastic BGA (13 × 15 mm, 0.8 mm pitch) - surface-mount package optimized for high-speed PCB layout with ground/power plane integration. |
Pinout & Package
UPD46365094BF1-E40-EQ1-A is housed in a 165-pin plastic BGA (13 × 15 mm grid, 0.8 mm pitch), lead-free compliant, with standard top-side index marking. Pin functions are defined per the μPD46365094B-specific pin arrangement (Page 4 of R10DS0090EJ0400 Rev.4.00).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A[0:19] | Synchronous address input | 20-bit address bus registered on K rising edge; enables 4M-word addressing with internal LSBs for burst sequence. |
| D0–D8 | Synchronous data input | 9-bit parallel data path for write operations; registered on K and K# rising edges across two cycles. |
| Q0–Q8 | Synchronous data output | 9-bit parallel data path for read operations; synchronized to C/C# rising edges (or K/K# if C/C# tied HIGH). |
| R#, W# | Read/write command inputs | Active-low, edge-triggered commands registered on K rising edge; mutually exclusive per cycle (read takes precedence). |
| BW0# | Byte write enable | Active-low control for selective 9-bit write masking; allows partial writes without read-modify-write overhead. |
| K, K# | Input clock pair | Differential clock inputs registering all control/address/data; 180° phase relationship required for timing margin. |
| C, C# | Output clock pair | User-controlled timing reference for output data; enables flight-time matching between clock and data to receiving device. |
| CQ, CQ# | Echo clock outputs | Outputs tightly matched to Q data edges; used as data-valid strobes independent of tristate state. |
| VDD, VDDQ, VSS | Power/ground supplies | Separate core (VDD) and I/O (VDDQ) rails; VSS distributed across 32 balls for low-inductance return paths. |
| VREF | HSTL reference input | Nominally VDDQ/2; sets input threshold for all HSTL-compatible control and address signals. |
| ZQ | Impedance calibration input | Connects to external resistor to ground; calibrates output driver impedance to 35–70 Ω range for signal integrity. |
| DLL# | PLL disable input | Active-low; disables PLL for low-frequency debug mode (AC/DC specs not guaranteed when asserted). |
| TMS, TDI, TCK, TDO | JTAG 1149.1 interface | IEEE-compliant boundary-scan test port operating at 1.8 V I/O level; optional for production test. |
Key Features
| Feature | Design Value |
|---|---|
| Concurrent read/write ports | Enables full-duplex memory access-critical for real-time packet buffering where ingress and egress streams operate simultaneously. |
| Four-tick burst operation | Reduces effective address bus toggle rate by 75%, lowering EMI and simplifying controller address generation logic. |
| User-programmable output impedance | 35–70 Ω tuning via ZQ pin eliminates need for external series termination resistors, saving board space and cost. |
| Internally self-timed write control | Removes external write-strobe timing constraints; guarantees correct write completion regardless of clock jitter or skew. |
| Clock-stop capability | Enters low-power state with 20 μs recovery-enables dynamic power gating in burst-oriented traffic patterns without system-level latency penalty. |
| JTAG 1149.1 test access | Supports IEEE-standard boundary-scan testing for interconnect verification and in-system programming of adjacent logic. |
Applications
| Network Packet Buffer | Baseband Processor Memory |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in telecom line cards before classification, queuing, or forwarding. IC Role / Device Role / Timing Role: Dual-port QDR-II SRAM serving as shared buffer between ingress parser and egress scheduler, with concurrent read/write enabled by separate ports. Use Value: 250 MHz operation delivers 1.0 Gb/s sustained bandwidth per 9-bit port, meeting line-rate buffering needs for 10Gbps interfaces without external arbitration logic. | Use Scenario: Holding channelized data in 4G/LTE femtocell baseband units during FFT/IFFT processing and modulation/demodulation pipelines. IC Role / Device Role / Timing Role: High-speed scratchpad memory interfacing directly with DSP cores, using C/C# clocks to match flight time to processor data capture windows. Use Value: Echo clocks (CQ/CQ#) provide deterministic data-valid timing, eliminating setup/hold uncertainty in multi-chip synchronization critical for OFDM symbol alignment. |
| Switch Fabric Lookup Table | High-Speed Test Equipment Memory |
Use Scenario: Storing MAC address tables or VLAN forwarding rules in modular enterprise switches requiring sub-10ns lookup latency. IC Role / Device Role / Timing Role: QDR-II SRAM acting as content-addressable memory (CAM) assist buffer, feeding parallel compare engines with pre-fetched rule subsets. Use Value: 4-word burst and HSTL interface ensure consistent 4.0 ns cycle time across temperature, enabling deterministic worst-case latency for Layer 2 switching decisions. | Use Scenario: Capturing high-resolution analog waveforms in automated test equipment (ATE) at >200 MS/s sampling rates with deep memory depth. IC Role / Device Role / Timing Role: Burst-mode acquisition buffer interfaced to high-speed ADCs and FPGA controllers, leveraging clock-stop to pause capture between test sequences. Use Value: Clock-stop recovery in ≤20 μs allows rapid reconfiguration between test vectors without memory reset overhead, improving test throughput by >15%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR-II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C2665KV18-400BZI | 4M × 18 organization, 300 MHz max, 165-pin BGA - wider data bus, higher speed, same voltage. | Requires depth expansion for 9-bit systems; better suited for 18-bit datapaths like DSP co-processors. | Select when 18-bit width matches system bus or when 300 MHz timing margin is required. |
| AS7C331024B-20BIN | 32M-bit × 8 async SRAM, 20 ns access, 100-pin TQFP - asynchronous, slower, different package and interface. | Lacks QDR features (burst, dual-port, echo clocks); suitable only for non-real-time control-plane storage. | Choose only for legacy designs where QDR timing complexity is unnecessary and cost is primary constraint. |
Compared with CY7C2665KV18-400BZI and AS7C331024B-20BIN, UPD46365094BF1-E40-EQ1-A uniquely balances 9-bit width, 250 MHz QDR-II performance, and BGA packaging for space-constrained telecom and test equipment, offering optimal trade-off between density, speed, and interface compatibility.
Availability
UPD46365094BF1-E40-EQ1-A is available at Aetrix Electronics and suitable for network packet buffering, baseband processor memory, and switch fabric lookup tables requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for UPD46365094BF1-E40-EQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation (formerly NEC Electronics) is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.
The μPD46365xxx series was designed specifically for high-bandwidth, low-latency memory subsystems in networking infrastructure and wireless base stations, emphasizing QDR-II protocol compliance, HSTL signal integrity, and robust thermal performance in compact BGA packages.
FAQ
What is the memory organization and total capacity of UPD46365094BF1-E40-EQ1-A?
UPD46365094BF1-E40-EQ1-A is organized as 4,194,304 words × 9 bits, delivering a total capacity of 36 megabits (36 Mbit). This configuration supports applications requiring a 9-bit data path-such as 8-bit data plus parity-or flexible byte-aligned access in packet-processing systems. The device implements true QDR-II architecture with separate read and write ports.
Does UPD46365094BF1-E40-EQ1-A support concurrent read and write operations?
Yes, UPD46365094BF1-E40-EQ1-A supports true concurrent read and write operations via physically independent read and write data ports. This allows simultaneous access to the memory array without bus contention-essential for real-time applications like network packet buffering where ingress and egress data streams must be handled in parallel without latency penalties.
What are the clocking requirements for UPD46365094BF1-E40-EQ1-A?
UPD46365094BF1-E40-EQ1-A requires two differential clock pairs: K/K# for input registration (address, control, write data) and C/C# for output timing (read data, echo clocks). K/K# must be 180° out-of-phase; C/C# may be tied HIGH to use K/K# for output timing. The device operates at 250 MHz (4.0 ns cycle time) and supports clock-stop with 20 μs recovery.
How is output impedance controlled on UPD46365094BF1-E40-EQ1-A?
UPD46365094BF1-E40-EQ1-A provides user-programmable output impedance via the ZQ pin, which connects to an external resistor to ground. This adjusts Q, CQ, and CQ# driver impedance to 35–70 Ω, matching typical PCB trace impedances. Calibration occurs automatically every 20 μs after power-up and tracks supply/temperature drift-eliminating need for fixed external termination resistors.
Is UPD46365094BF1-E40-EQ1-A compatible with JTAG boundary-scan testing?
Yes, UPD46365094BF1-E40-EQ1-A integrates a fully compliant IEEE 1149.1 JTAG test access port (TMS, TDI, TCK, TDO) operating at 1.8 V I/O level. This enables boundary-scan testing for interconnect verification and in-system debugging. Pins may be left unconnected if JTAG functionality is unused, except TCK which must be tied to VSS in that case.
UPD46365094BF1-E40-EQ1-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPD46365094BF1-E40-EQ1-A FAQ
1.How can I place an order for UPD46365094BF1-E40-EQ1-A through Aetrix?
Please submit a Request for Quotation (RFQ) for UPD46365094BF1-E40-EQ1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPD46365094BF1-E40-EQ1-A reliable?
The price and inventory of UPD46365094BF1-E40-EQ1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD46365094BF1-E40-EQ1-A is usually 5 days.
3.What payment methods are accepted for UPD46365094BF1-E40-EQ1-A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD46365094BF1-E40-EQ1-A transactions.
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4.How is shipping managed for UPD46365094BF1-E40-EQ1-A?
UPD46365094BF1-E40-EQ1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPD46365094BF1-E40-EQ1-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPD46365094BF1-E40-EQ1-A?
For technical support, including UPD46365094BF1-E40-EQ1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD46365094BF1-E40-EQ1-A requirements.
6.How does Aetrix verify that UPD46365094BF1-E40-EQ1-A is sourced from the original manufacturer or authorized distributors?
All UPD46365094BF1-E40-EQ1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD46365094BF1-E40-EQ1-A meets industry standards.
7.What is the process for return or replacement of UPD46365094BF1-E40-EQ1-A?
All UPD46365094BF1-E40-EQ1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD46365094BF1-E40-EQ1-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPD46365094BF1-E40-EQ1-A part is unused and in its original packaging.
Return procedure for UPD46365094BF1-E40-EQ1-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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