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Renesas UPD46365182BF1-E40-EQ1-A

Part No.:
UPD46365182BF1-E40-EQ1-A
Manufacturer:
Renesas
Category:
Memory
Package:
-
Datasheet:
AetrixUPD46365182BF1-E40-EQ1-A.pdf
Description:
QDR SRAM, 2MX18, 0.45NS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:878

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Product details

Overview

UPD46365182BF1-E40-EQ1-A from Renesas Electronics is a 2,097,152-word × 18-bit synchronous quad data rate (QDR II) SRAM with 4.0 ns clock cycle time (250 MHz), 1.8 V core supply, HSTL interface, and 165-pin plastic BGA (13 × 15) package. It supports concurrent read/write operations, burst-2 DDR transactions, and is used in high-speed networking buffers and packet-forwarding engines.

For engineers reviewing the UPD46365182BF1-E40-EQ1-A datasheet, UPD46365182BF1-E40-EQ1-A pinout, UPD46365182BF1-E40-EQ1-A application, or UPD46365182BF1-E40-EQ1-A equivalent, key selection considerations include its 2M × 18 organization, 250 MHz QDR-II timing, dual-clock (K/K# and C/C#) architecture, HSTL I/O compliance, and user-programmable output impedance (35–70 Ω).

Technical Context

This QDR II SRAM employs separate read and write data ports with independent address latching on K (read) and K# (write) rising edges. Its internal PLL enables wide output data valid window and supports future frequency scaling up to 300 MHz.

The device delivers synchronized output data aligned to C/C# rising edges (or K/K# if C/C# are tied HIGH), includes echo clocks (CQ/CQ#) tightly matched to data for precise timing validation, and features JTAG 1149.1 test access for boundary-scan verification.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization2,097,152 words × 18 bits - provides 36 Mbit density optimized for 18-bit datapath systems like network switch ASIC interfaces.
Clock Cycle Time4.0 ns - supports 250 MHz operation with guaranteed timing margins per JEDEC QDR-II spec.
Supply Voltage1.8 V ± 0.1 V core (VDD); 1.4–1.8 V I/O (VDDQ) - enables low-power, high-speed operation compatible with 1.8 V logic families.
I/O InterfaceHSTL Class I - ensures signal integrity at 250 MHz with controlled impedance and tight AC timing.
Package165-pin plastic BGA (13 × 15 mm) - standard footprint for high-density PCB layouts in telecom and storage applications.
Burst Operation2-word burst - delivers two consecutive data words per clock cycle, achieving 100% bus utilization in DDR read/write.
Output ImpedanceUser-programmable 35–70 Ω via ZQ pin - allows dynamic matching to system trace impedance without external termination resistors.

Pinout & Package

Package: 165-pin plastic BGA (13 × 15 mm), RoHS-compliant, lead-free.

Pin/TerminalCircuit RoleDesign Meaning
A0–A19Synchronous Address Input20-bit address registered on K rising edge for READ, K# rising edge for WRITE; supports 2M-word addressing.
D0–D17Synchronous Data Input18-bit parallel input latched on K and K# rising edges during WRITE cycles.
Q0–Q17Synchronous Data Output18-bit parallel output synchronized to C/C# rising edges (or K/K# if C/C# = HIGH).
R#, W#Read/Write ControlActive-low commands initiating burst-2 READ or WRITE; both high = NOP (high-Z outputs).
K, K#Input Clock PairDifferential input clocks; K rising edge latches READ address/control, K# rising edge latches WRITE address/data.
C, C#Output Clock PairUser-controlled timing reference for output data; C# rising edge clocks first word, C rising edge clocks second word.
CQ, CQ#Echo Clock OutputOutput-aligned clocks tightly matched to Q outputs (±0.1 ns variation), used for data valid window detection.
ZQImpedance Calibration InputConnects to external resistor to ground to set output driver impedance (0.2 × RQ); enables on-die termination tuning.
DLL#PLL DisableActive-low input disabling internal PLL; used for debug at sub-120 MHz frequencies (RL = 1 cycle, AC specs not guaranteed).
VREFHSTL ReferenceNominally VDDQ/2 reference for HSTL input buffers; must be stable before clock application.
TMS, TDI, TCK, TDOJTAG Test InterfaceIEEE 1149.1 compliant boundary-scan port operating at 1.8 V I/O level.

Key Features

FeatureDesign Value
Concurrent Read/Write PortsIndependent address/data paths enable simultaneous memory access-critical for full-duplex packet buffering in switch fabric designs.
Two-Tick Burst OperationDelivers two data words per clock cycle with no dead cycles, maximizing bandwidth efficiency in DDR protocols.
Programmable Output ImpedanceOn-die termination calibrated via ZQ pin eliminates need for external series resistors and reduces layout complexity.
PLL-Based Timing Margin EnhancementInternal PLL widens data valid window and supports scalable clock frequencies up to 300 MHz without redesign.
Clock-Stop CapabilityEnters low-power state when clocks halt; resumes normal operation within 20 μs after clock restart-enables dynamic power gating.
HSTL Class I ComplianceMeets JEDEC JESD8-6 specification for 1.8 V I/O, ensuring signal integrity and interoperability with FPGA/ASIC memory controllers.

Applications

Network Packet BufferHigh-Speed Switch Fabric

Use Scenario: Temporary storage of variable-length Ethernet frames in line-rate forwarding engines.

IC Role / Device Role / Timing Role: Dual-port QDR II SRAM serving as ingress/egress buffer with zero-latency concurrent access.

Use Value: 250 MHz burst-2 operation delivers 9 Gbps sustained bandwidth, eliminating bottlenecks in 10G+ switch ASIC data paths.

Use Scenario: Shared memory for crossbar arbitration and cell-based switching in multi-gigabit routers.

IC Role / Device Role / Timing Role: High-density, low-latency memory providing deterministic read/write timing for traffic shaping logic.

Use Value: HSTL I/O and echo clocks (CQ/CQ#) enable sub-nanosecond timing closure in 13×15 mm BGA layout.

Telecom Line Card CacheStorage Controller FIFO

Use Scenario: Real-time caching of SONET/SDH overhead bytes and payload descriptors in optical transport modules.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as descriptor cache with burst-2 reads aligned to frame boundaries.

Use Value: 4.0 ns cycle time and clock-stop support reduce power by >40% during idle periods without sacrificing latency.

Use Scenario: Command queue between host processor and NVMe/SAS controller in enterprise SSDs.

IC Role / Device Role / Timing Role: Low-jitter, high-throughput buffer decoupling asynchronous host writes from serialized flash access.

Use Value: Separate read/write ports and 18-bit width match common storage command structures, minimizing glue logic.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C2665KV18-400BZI400 MHz (2.5 ns), 2M × 18, same 165-pin BGA but Cypress-specific pinout and VDDQ range (1.4–1.6 V)Higher speed grade; requires tighter layout control for 400 MHz timing closureSelect for bandwidth-critical designs needing >250 MHz operation; verify clock tree skew and VDDQ regulation.
IS42S16160F-6BLSynchronous DRAM (SDRAM), not QDR; 16M × 16, 166 MHz, different command protocol and burst lengthLacks concurrent read/write; requires refresh and more complex controller logicConsider only if cost sensitivity outweighs performance-requires full controller redesign and sacrifices deterministic latency.

Compared with CY7C2665KV18-400BZI, UPD46365182BF1-E40-EQ1-A offers lower power at 250 MHz and broader VDDQ tolerance, while IS42S16160F-6BL lacks true QDR architecture and cannot support simultaneous access-making UPD46365182BF1-E40-EQ1-A the optimal choice for deterministic, high-throughput buffering.

Availability

UPD46365182BF1-E40-EQ1-A is available at Aetrix Electronics and suitable for high-speed networking equipment, telecom infrastructure, and storage controller designs requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for UPD46365182BF1-E40-EQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The UPD46365182BF1-E40-EQ1-A belongs to Renesas' QDR II SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth buffering in packet-switched networks and real-time data path applications.

FAQ

What is the maximum operating frequency supported by UPD46365182BF1-E40-EQ1-A?

The UPD46365182BF1-E40-EQ1-A is rated for 250 MHz operation with a 4.0 ns clock cycle time. While its QDR II architecture supports up to 300 MHz (3.3 ns) in the -E33 variant, the -E40 suffix confirms this specific part is characterized and guaranteed for 250 MHz across 0°C to 70°C ambient temperature.

Does UPD46365182BF1-E40-EQ1-A support concurrent read and write operations?

Yes, UPD46365182BF1-E40-EQ1-A features fully independent read and write data ports. It can execute a READ transaction on one port while simultaneously performing a WRITE on the other, enabling true full-duplex memory access essential for switch fabric and packet buffer applications.

How is output impedance calibrated on UPD46365182BF1-E40-EQ1-A?

Output impedance calibration on UPD46365182BF1-E40-EQ1-A is performed via the ZQ pin. A resistor (RQ) is connected from ZQ to ground; the device sets Q, CQ, and CQ# output impedance to 0.2 × RQ. The calibration runs automatically every 20 μs after power-up to compensate for voltage and temperature drift.

What happens when DLL# is pulled LOW on UPD46365182BF1-E40-EQ1-A?

When DLL# is pulled LOW, the internal PLL is disabled, allowing operation at clock frequencies below 120 MHz. However, AC/DC electrical characteristics are not guaranteed, and read latency changes from 2.0 to 1.0 clock cycles. This mode is intended solely for board-level debug-not production use.

Can UPD46365182BF1-E40-EQ1-A be used with a single-ended clock source?

No-UPD46365182BF1-E40-EQ1-A requires differential clock pairs: K/K# for input registration and C/C# for output timing. Single-ended drive violates setup/hold timing and may cause metastability. The device expects 180° phase alignment between each pair, with strict jitter limits (TKC var ≤ 0.2 ns).

UPD46365182BF1-E40-EQ1-A Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
-
Memory Format:
-
Technology:
-
Memory Size:
-
Memory Organization:
-
Memory Interface:
-
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

UPD46365182BF1-E40-EQ1-A FAQ

1.How can I place an order for UPD46365182BF1-E40-EQ1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD46365182BF1-E40-EQ1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD46365182BF1-E40-EQ1-A reliable?

The price and inventory of UPD46365182BF1-E40-EQ1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD46365182BF1-E40-EQ1-A is usually 5 days.

3.What payment methods are accepted for UPD46365182BF1-E40-EQ1-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD46365182BF1-E40-EQ1-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPD46365182BF1-E40-EQ1-A?

UPD46365182BF1-E40-EQ1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD46365182BF1-E40-EQ1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD46365182BF1-E40-EQ1-A?

For technical support, including UPD46365182BF1-E40-EQ1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD46365182BF1-E40-EQ1-A requirements.

6.How does Aetrix verify that UPD46365182BF1-E40-EQ1-A is sourced from the original manufacturer or authorized distributors?

All UPD46365182BF1-E40-EQ1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD46365182BF1-E40-EQ1-A meets industry standards.

7.What is the process for return or replacement of UPD46365182BF1-E40-EQ1-A?

All UPD46365182BF1-E40-EQ1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD46365182BF1-E40-EQ1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD46365182BF1-E40-EQ1-A part is unused and in its original packaging.

Return procedure for UPD46365182BF1-E40-EQ1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

UPD46365182BF1-E40-EQ1-A Tags

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