Renesas UPD46365184BF1-E33Y-EQ1-A

Overview

UPD46365184BF1-E33Y-EQ1-A from Renesas Electronics is a 2,097,152-word × 18-bit synchronous quad data rate (QDR II) SRAM with 3.3 ns clock cycle time (300 MHz), 1.8 V core supply, HSTL interface, and 165-pin plastic BGA (13 × 15) packaging. It supports concurrent read/write operations, four-word burst, and clock-stop mode for low-power standby in high-bandwidth memory subsystems used in network packet buffers and FPGA co-processor caches.

For engineers reviewing the UPD46365184BF1-E33Y-EQ1-A datasheet, UPD46365184BF1-E33Y-EQ1-A pinout, UPD46365184BF1-E33Y-EQ1-A application, or UPD46365184BF1-E33Y-EQ1-A equivalent, key selection criteria include its −40°C to +85°C industrial temperature rating, dual-clock timing architecture (K/K# input, C/C# output), user-programmable output impedance (35–70 Ω), JTAG 1149.1 test port, and DDR-style 100% bus utilization during burst reads/writes.

Technical Context

This QDR II SRAM implements separate independent read and write data ports with concurrent transaction capability, enabling simultaneous access without arbitration delay. Its internal PLL provides a wide output data valid window and supports future frequency scaling up to 300 MHz while maintaining precise flight-time matching between C/C# output clocks and synchronized data outputs.

The device uses full-CMOS six-transistor memory cells and integrates a burst counter, synchronous peripheral circuitry, and internally self-timed write control. All inputs are registered on the rising edge of K, and data is latched on both rising edges of K and K#, supporting true double-data-rate operation with deterministic timing aligned to clock edges only.

Key Specifications

Pinout & Package

UPD46365184BF1-E33Y-EQ1-A is housed in a 165-pin plastic BGA package with 13 × 15 ball grid array (1.0 mm pitch), lead-free finish, and index mark defined per Renesas package dimensions. The package supports thermal dissipation with θ_ja = 13.2°C/W at 1 m/s airflow.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C2665KV18-333BZC and AS7C362000B-333BIN, UPD46365184BF1-E33Y-EQ1-A offers unique ZQ-based impedance tuning and industrial temperature support with identical 165-pin BGA mechanical fit-enabling drop-in replacement where HSTL Class I compliance and programmable drive strength are required.

Availability

UPD46365184BF1-E33Y-EQ1-A is available at Aetrix Electronics and suitable for network infrastructure, FPGA acceleration, telecom baseband, and industrial control applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for UPD46365184BF1-E33Y-EQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD46365184BF1-E33Y-EQ1-A belongs to Renesas' QDR II SRAM product line, engineered for high-throughput, low-latency memory subsystems in networking equipment, FPGA-based accelerators, and real-time embedded systems demanding deterministic timing and industrial reliability.

FAQ

What is the operating temperature range for UPD46365184BF1-E33Y-EQ1-A?

The UPD46365184BF1-E33Y-EQ1-A is rated for industrial operation from −40°C to +85°C, as confirmed by Renesas' Recommended DC Operating Conditions table (Page 16) and Absolute Maximum Ratings (Page 16). This makes it suitable for deployment in telecom base stations, industrial PLCs, and outdoor networking gear where ambient conditions exceed commercial-grade limits.

Does UPD46365184BF1-E33Y-EQ1-A support concurrent read and write operations?

Yes, UPD46365184BF1-E33Y-EQ1-A features physically separate read and write data ports (Q0–Q17 and D0–D17) and independent address/control paths, enabling true concurrent transactions without arbitration delay. The block diagram (Page 10) and Truth Table (Page 12) confirm simultaneous read and write initiation is permitted, with read taking precedence if both commands are asserted on the same clock edge.

How does the ZQ pin function on UPD46365184BF1-E33Y-EQ1-A?

The ZQ pin on UPD46365184BF1-E33Y-EQ1-A serves as an impedance calibration input referenced to an external resistor to ground. As described on Page 8, it sets Q, CQ, and CQ# output impedance to 0.2 × RQ, enabling programmable drive strength from 35 Ω to 70 Ω. The device performs automatic recalibration every 20 μs after power-up to compensate for voltage and temperature drift.

What clocking architecture does UPD46365184BF1-E33Y-EQ1-A use for data synchronization?

UPD46365184BF1-E33Y-EQ1-A employs a dual-clock architecture: K/K# registers all inputs and write data, while C/C# controls read data output timing. As specified on Page 7, C/C# rising edges define the output data valid window-C# for first/third words and C for second/fourth-enabling precise flight-time matching with the receiving device's capture clock.

Is JTAG boundary-scan supported on UPD46365184BF1-E33Y-EQ1-A?

Yes, UPD46365184BF1-E33Y-EQ1-A includes full IEEE 1149.1 JTAG test access port with TMS, TDI, TCK, and TDO pins operating at 1.8 V I/O level (Page 8). The JTAG interface supports boundary-scan testing and is compatible with standard debug tools, though pins may be left unconnected if not used in the target system.