Renesas UPD46365184BF1-E40Y-EQ1-A

Overview

UPD46365184BF1-E40Y-EQ1-A from Renesas Electronics is a 2,097,152-word × 18-bit synchronous quad data rate (QDR II) SRAM with HSTL interface, 4-word burst operation, and 1.8 V core supply. It delivers 250 MHz clock frequency (4.0 ns cycle time), supports −40°C to +85°C industrial temperature range, and is packaged in 165-pin plastic BGA (13 × 15 mm). It enables high-bandwidth memory buffering in network packet processors and FPGA-based communication systems.

For engineers reviewing the UPD46365184BF1-E40Y-EQ1-A datasheet, UPD46365184BF1-E40Y-EQ1-A pinout, UPD46365184BF1-E40Y-EQ1-A application, or UPD46365184BF1-E40Y-EQ1-A equivalent, key selection considerations include its 18-bit wide QDR II interface, dual-read/write port concurrency, user-programmable output impedance (35–70 Ω), clock-stop capability (20 μs recovery), and JTAG 1149.1 test access.

Technical Context

This QDR II SRAM employs full-CMOS six-transistor memory cells and integrates synchronous peripheral circuitry including a burst counter, PLL for output timing margining, and independent read/write data paths. Input registers latch on the rising edge of K/K#, while output data aligns to C/C# rising edges-enabling precise flight-time matching between clock and data.

It implements HSTL Class I I/O with VREF-referenced inputs, supports byte-write via BW0#/BW1# control, and features DLL#-controlled PLL disable for low-frequency debug. The device requires stable clock ≥20 μs post-power-up for PLL lock and mandates four NOP cycles before normal operation.

Key Specifications

Pinout & Package

Package: 165-pin plastic BGA (13 mm × 15 mm, 0.8 mm pitch), lead-free, top-view orientation with index mark at corner A1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with UPD46365184BF1-E40Y-EQ1-A, CY7C2663KV18 offers higher bandwidth but sacrifices industrial temperature support and clock-stop power savings, while IDT 70V9269L15PF provides voltage-compatible drop-in replacement only in non-critical, lower-speed legacy systems lacking advanced QDR II features.

Availability

UPD46365184BF1-E40Y-EQ1-A is available at Aetrix Electronics and suitable for network packet buffering, FPGA-based protocol acceleration, and telecom baseband processing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for UPD46365184BF1-E40Y-EQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The UPD46365184BF1-E40Y-EQ1-A belongs to Renesas' QDR II SRAM product line, designed specifically for high-throughput, low-latency memory interfacing in networking, telecommunications, and high-performance computing systems demanding deterministic timing and industrial-grade reliability.

FAQ

What is the operating temperature range of the UPD46365184BF1-E40Y-EQ1-A?

The UPD46365184BF1-E40Y-EQ1-A is rated for industrial operation from −40°C to +85°C. This specification is confirmed in the Ordering Information table (Rev.4.00, Page 2) under the "E40Y" suffix, and validated by DC Characteristics 2 (Page 18), which lists IDD and ISB1 parameters explicitly for TA = −40 to +85°C. The device meets full electrical performance across this range with 1.8 ± 0.1 V VDD supply.

Does the UPD46365184BF1-E40Y-EQ1-A support concurrent read and write operations?

Yes, the UPD46365184BF1-E40Y-EQ1-A supports true concurrent read and write operations via physically separate read and write data ports. As stated in the Features section (Page 1), it includes "separate independent read and write data ports with concurrent transactions." The Block Diagram (Page 10) confirms distinct DATA REGISTRY & LOGIC paths for read (Q0–Q17) and write (D0–D17), enabling simultaneous access without arbitration delay.

How does the ZQ pin function on the UPD46365184BF1-E40Y-EQ1-A?

The ZQ pin on the UPD46365184BF1-E40Y-EQ1-A is an input used for output impedance calibration. Per Pin Description (Page 8), it connects to an external resistor to ground (RQ), and the device sets Q, CQ, and CQ# output driver strength to 0.2 × RQ. Impedance adjustment occurs automatically every 20 μs after power-up. Direct connection to VDDQ minimizes output impedance; connection to GND or leaving it unconnected is prohibited.

What clocking scheme does the UPD46365184BF1-E40Y-EQ1-A use for data output timing?

The UPD46365184BF1-E40Y-EQ1-A uses a dual-clock scheme: C and C# output clocks control data timing. As specified in Pin Description (Page 7), the rising edge of C# clocks the first and third output data words, while the rising edge of C clocks the second and fourth. This allows precise flight-time matching between clock and data signals delivered to the receiving device - a core requirement for source-synchronous interfaces.

Is JTAG debugging supported on the UPD46365184BF1-E40Y-EQ1-A?

Yes, the UPD46365184BF1-E40Y-EQ1-A includes IEEE 1149.1 JTAG test access via dedicated TMS, TDI, TCK, and TDO pins (Pin Arrangement, Page 5; Pin Description, Page 8). All JTAG signals operate at 1.8 V I/O level. The device supports boundary scan testing, and pins may be left unconnected if JTAG functionality is unused - though TCK must be tied to VSS in that case per datasheet guidance.