Renesas UPD46365364BF1-E40-EQ1-A
- Part No.:
- UPD46365364BF1-E40-EQ1-A
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
UPD46365364BF1-E40-EQ1-A.pdf
- Description:
- QDR SRAM, 1MX36, 0.45NS
- Quantity:
- Payment:

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Product details
Overview
UPD46365364BF1-E40-EQ1-A from Renesas Electronics is a 1,048,576-word × 36-bit synchronous quad data rate (QDR II) SRAM with HSTL interface, 1.8 V core supply, 4.0 ns clock cycle time (250 MHz), and 165-pin plastic BGA (13 × 15) packaging. It supports concurrent read/write ports, four-tick burst operation, and user-programmable output impedance for high-speed networking and packet buffer applications.
For engineers reviewing the UPD46365364BF1-E40-EQ1-A datasheet, UPD46365364BF1-E40-EQ1-A pinout, UPD46365364BF1-E40-EQ1-A application, or UPD46365364BF1-E40-EQ1-A equivalent, key selection considerations include its 36-bit wide I/O, dual-clock timing architecture (K/K# input, C/C# output), DLL-enabled PLL for jitter tolerance, HSTL Class I compliance, and byte-write granularity via BW0#–BW3# control signals.
Technical Context
This QDR II SRAM uses full-CMOS six-transistor memory cells and integrates synchronous peripheral circuitry including a burst counter, internal PLL, and independent read/write data paths. Its dual-clock architecture separates input registration (on K/K# rising edges) from output timing (synchronized to C/C# rising edges), enabling precise flight-time matching between clock and data.
The device implements 4-word burst transfers per transaction, supports clock-stop mode with 20 μs recovery, and provides user-configurable output impedance (35–70 Ω) via ZQ calibration. All control inputs-including R#, W#, and BWx#-are registered on the rising edge of K, and the JTAG 1149.1 test port enables boundary-scan verification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Organization | 1,048,576 words × 36 bits = 36 Mbit density; supports high-bandwidth packet buffering in switch ASICs. |
| Clock cycle time | 4.0 ns (250 MHz); defines maximum sustained bus throughput of 1 Gb/s per data line in burst mode. |
| Core supply voltage | 1.8 ± 0.1 V; requires tight regulation and decoupling to maintain timing margins under dynamic load. |
| I/O interface | HSTL Class I compliant; ensures signal integrity at 250 MHz with controlled slew and termination matching. |
| Package | 165-pin plastic BGA (13 × 15 mm); requires 0.8 mm pitch layout and thermal via strategy for θJA = 13.2°C/W @ 1 m/s airflow. |
| Burst length | Fixed 4-word burst; reduces address bus frequency by 4× versus single-word access, easing controller design. |
| Write enable | Separate R# and W# inputs with registered sampling on K rising edge; prevents bus contention during concurrent operations. |
Pinout & Package
Package: 165-pin plastic BGA (13 × 15 mm), lead-free, with index mark per JEDEC MO-270AB. Thermal pad not present; bottom-side solder mask defined per datasheet mechanical drawing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A[0:17] | Synchronous address input | 18-bit address bus registered on K rising edge; concatenated with internal LSBs to generate 4-word burst sequence (A, A+1, A+2, A+3). |
| D0–D35 | Synchronous data input | 36-bit parallel write data path; sampled on both K and K# rising edges during WRITE cycles. |
| Q0–Q35 | Synchronous data output | 36-bit parallel read data path; aligned to C/C# rising edges (or K/K# if C/C# tied HIGH) for deterministic flight time. |
| R#, W# | Read/write command inputs | Active-low, edge-triggered commands registered on K rising edge; mutually exclusive per cycle per truth table. |
| BW0#–BW3# | Byte write enable inputs | Four independent active-low controls enabling selective 9-bit writes across 36-bit bus; supports partial-word updates without read-modify-write. |
| K, K# | Input clock pair | Differential clock inputs registering all control and address inputs on K rising edge; K# ideally 180° out-of-phase for setup/hold margin. |
| C, C# | Output clock pair | User-controlled timing reference for output data; C# drives 1st/3rd data, C drives 2nd/4th data; must be fixed HIGH if unused. |
| CQ, CQ# | Echo clock outputs | Output-synchronized clocks tightly matched to Q outputs; used as data-valid strobes at receiving end, continue running even when Q tristated. |
| ZQ | Impedance calibration input | Connects to external resistor to ground (RQ = 175–350 Ω) to calibrate Q/CQ/CQ# output drive strength to 0.2 × RQ. |
| DLL# | PLL disable input | Active-low signal disabling internal PLL; required LOW only for debug at sub-120 MHz; must be HIGH (tied to VDDQ) for normal 250 MHz operation. |
| VDD, VDDQ, VSS | Power supplies | VDD = 1.8 V core; VDDQ = 1.4–1.8 V I/O supply (isolated); VSS = common ground; power sequencing required (VSS → VDD/VDDQ → VREF → VIN). |
| TMS, TDI, TCK, TDO | JTAG 1149.1 interface | IEEE 1149.1 test access port operating at 1.8 V I/O level; TCK must tie to VSS if unused. |
Key Features
| Feature | Design Value |
|---|---|
| Concurrent read/write ports | Enables full-duplex memory access-critical for real-time packet forwarding where ingress and egress buffers operate simultaneously. |
| Four-tick burst operation | Delivers 4 words per clock cycle, reducing address bus toggling by 75% and minimizing controller logic complexity. |
| HSTL Class I interface | Guarantees signal integrity at 250 MHz with differential timing, low-voltage swing (0.5 V), and built-in termination compatibility. |
| User-programmable output impedance | Adjusts drive strength via ZQ resistor to match PCB trace impedance (35–70 Ω), eliminating need for external series resistors. |
| Internally self-timed write control | Removes external write pulse timing constraints-controller only asserts W# and address; device handles write latency internally. |
| Clock-stop capability | Enters low-power state with zero current draw on data lines; resumes full operation within 20 μs after clock restart-ideal for bursty traffic patterns. |
Applications
| High-Speed Network Switching | Telecom Line Cards |
|---|---|
Use Scenario: Buffering Ethernet frames in Layer 2/L3 switching ASICs with 10 GbE+ line rates. IC Role / Device Role / Timing Role: Primary packet buffer SRAM providing 36-bit-wide concurrent read/write access synchronized to system clock domain. Use Value: 1 Gb/s per data line throughput and 4-word burst reduce controller overhead and eliminate pipeline stalls during back-to-back frame processing. | Use Scenario: Storing ATM or IP cell payloads in OC-192/STM-64 line interface units. IC Role / Device Role / Timing Role: Dual-port FIFO replacement with deterministic latency and no external arbitration logic. Use Value: Concurrent read/write ports and echo clocks (CQ/CQ#) enable precise inter-chip timing alignment across multi-FPGA signal paths. |
| Baseband Processing in 4G LTE | High-Performance Test Equipment |
Use Scenario: Real-time channel estimation and FFT buffer in LTE eNodeB baseband processors. IC Role / Device Role / Timing Role: Low-latency scratchpad memory interfacing directly to DSP cores via HSTL bus. Use Value: 4.0 ns cycle time and clock-stop mode support burst-mode processing with <20 μs wake-up-matching TD-LTE subframe timing. | Use Scenario: Capturing high-speed serial protocol waveforms (PCIe Gen3, SATA III) in logic analyzers. IC Role / Device Role / Timing Role: Deep acquisition memory with simultaneous capture (write) and analysis (read) capability. Use Value: Independent read/write ports allow real-time streaming into memory while background analysis reads prior segments-no dead time. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY7C2663KV18-400BZI | 1M × 18 organization, 2.5 V core, 400 MHz (2.5 ns), 165-pin BGA | Half the data width; requires two devices for 36-bit interface; higher voltage limits use in 1.8 V systems. | Select when 18-bit bus width suffices and higher speed justifies voltage and layout complexity. |
| Integrated Device Technology IDT72T36120L10BG | 1M × 36 organization, 1.8 V core, 200 MHz (5.0 ns), 165-pin BGA | Slower cycle time; lacks PLL and echo clocks; no ZQ impedance tuning. | Select when 200 MHz bandwidth is sufficient and simplified timing closure outweighs advanced features. |
Compared with UPD46365364BF1-E40-EQ1-A, the Cypress part offers higher speed but narrower bus width and incompatible voltage, while the IDT part trades performance and feature set for timing simplicity and broader legacy support.
Availability
UPD46365364BF1-E40-EQ1-A is available at Aetrix Electronics and suitable for high-speed networking, telecom infrastructure, and baseband processing applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for UPD46365364BF1-E40-EQ1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.
The UPD46365364BF1-E40-EQ1-A belongs to Renesas' QDR II SRAM product line, engineered specifically for high-bandwidth, low-latency buffer applications in network switches, routers, and baseband units where concurrent access and precise timing alignment are critical.
FAQ
What is the maximum guaranteed clock frequency for UPD46365364BF1-E40-EQ1-A?
The UPD46365364BF1-E40-EQ1-A is rated for a 4.0 ns clock cycle time, corresponding to a maximum guaranteed frequency of 250 MHz under specified operating conditions (TA = 0 to 70°C, VDD = 1.8 ± 0.1 V). This rating includes margin for setup/hold timing, jitter, and board-level signal integrity-exceeding 250 MHz may violate AC timing parameters and is not supported.
Does UPD46365364BF1-E40-EQ1-A support true simultaneous read and write operations?
Yes, UPD46365364BF1-E40-EQ1-A supports true concurrent read and write operations through physically separate data ports (Q0–Q35 for read, D0–D35 for write) and independent address latching. The internal state machine allows overlapping transactions as long as R# and W# are not asserted on the same K rising edge-read takes precedence if both are active simultaneously.
How is output impedance calibrated on UPD46365364BF1-E40-EQ1-A?
Output impedance calibration on UPD46365364BF1-E40-EQ1-A is performed via the ZQ pin, which connects to an external resistor (RQ) to ground. The device measures RQ at power-up and adjusts Q, CQ, and CQ# driver strength to 0.2 × RQ, supporting 35–70 Ω range. Calibration repeats every 20 μs to compensate for voltage/temperature drift.
Can UPD46365364BF1-E40-EQ1-A operate without using the C and C# output clocks?
Yes, UPD46365364BF1-E40-EQ1-A can operate with C and C# fixed HIGH, causing output data to be synchronized to K and K# rising edges instead. However, this disables flight-time matching capability and reduces timing margin; the datasheet specifies that C/C# must be fixed HIGH (not floating) to guarantee operation in this mode.
What is the purpose of the DLL# pin on UPD46365364BF1-E40-EQ1-A?
The DLL# pin on UPD46365364BF1-E40-EQ1-A disables the internal PLL when pulled LOW, allowing debug operation at frequencies below 120 MHz without PLL lock requirements. For normal 250 MHz operation, DLL# must be HIGH (typically tied to VDDQ via ≤10 kΩ resistor); leaving it unconnected or floating violates DC specifications and risks undefined behavior.
UPD46365364BF1-E40-EQ1-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPD46365364BF1-E40-EQ1-A FAQ
1.How can I place an order for UPD46365364BF1-E40-EQ1-A through Aetrix?
Please submit a Request for Quotation (RFQ) for UPD46365364BF1-E40-EQ1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPD46365364BF1-E40-EQ1-A reliable?
The price and inventory of UPD46365364BF1-E40-EQ1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD46365364BF1-E40-EQ1-A is usually 5 days.
3.What payment methods are accepted for UPD46365364BF1-E40-EQ1-A?
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPD46365364BF1-E40-EQ1-A?
For technical support, including UPD46365364BF1-E40-EQ1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD46365364BF1-E40-EQ1-A requirements.
6.How does Aetrix verify that UPD46365364BF1-E40-EQ1-A is sourced from the original manufacturer or authorized distributors?
All UPD46365364BF1-E40-EQ1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD46365364BF1-E40-EQ1-A meets industry standards.
7.What is the process for return or replacement of UPD46365364BF1-E40-EQ1-A?
All UPD46365364BF1-E40-EQ1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD46365364BF1-E40-EQ1-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPD46365364BF1-E40-EQ1-A part is unused and in its original packaging.
Return procedure for UPD46365364BF1-E40-EQ1-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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