Renesas UPD48288209AFF-E24-DW1-A

Overview

UPD48288209AFF-E24-DW1-A from NEC Electronics (now Renesas) is a 33,554,432-word × 9-bit, 288M-bit synchronous double-data-rate low-latency DRAM with HSTL I/O, 400 MHz operation, and 144-pin TAPE FBGA (18.5 × 11 mm) packaging. It delivers 15 ns random cycle time and supports SRAM-type non-multiplexed addressing for high-speed memory subsystems in networking line cards and industrial controllers.

For engineers reviewing the UPD48288209AFF-E24-DW1-A datasheet, UPD48288209AFF-E24-DW1-A pinout, UPD48288209AFF-E24-DW1-A application, or UPD48288209AFF-E24-DW1-A equivalent, key selection considerations include its 2.5 ns cycle time at 400 MHz, differential CK/CK# and DK/DK# clocks, programmable 25–60 Ω output impedance, JTAG boundary scan support, and 0–95°C case temperature rating.

Technical Context

This device implements a double-data-rate architecture with dedicated differential input clocks (CK/CK#) and input data clocks (DK/DK#), plus free-running differential output data clocks (QK0/QK0#) edge-aligned to DQ0–DQ8. Its internal 8-bank memory array uses non-multiplexed address inputs (A0–A20) and bank address lines (BA0–BA2), enabling deterministic latency without address multiplexing overhead.

The UPD48288209AFF-E24-DW1-A integrates a PLL for clock synchronization, supports auto-refresh (8192 cycles/32 ms per bank), includes QVLD for precise data validity indication, and features user-programmable output impedance via ZQ calibration-enabling system-level signal integrity tuning without external termination resistors.

Key Specifications

Pinout & Package

Package: 144-pin TAPE FBGA, 18.5 mm × 11 mm footprint, lead-free compliant, with exposed thermal pad (not electrically connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-latency DDR DRAM applications.

Compared with IS42S16400F-6BLI and MT47H64M8CB-3:J, the UPD48288209AFF-E24-DW1-A provides superior bandwidth-per-pin (800 MT/s vs ≤333 MT/s), tighter tRC (15 ns vs ≥22.5 ns), and integrated ZQ calibration - making it optimal for latency-critical, high-density embedded memory subsystems where layout flexibility and signal integrity are prioritized over JEDEC standardization.

Availability

UPD48288209AFF-E24-DW1-A is available at Aetrix Electronics and suitable for networking infrastructure, industrial automation, and medical imaging equipment requiring stable component supply, long-lifecycle assurance, and guaranteed traceable sourcing.

Supply support for UPD48288209AFF-E24-DW1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation (formerly NEC Electronics) is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and communications markets.

The μPD48288209A family was designed specifically for high-performance embedded systems requiring low-latency, non-multiplexed DDR memory interfaces - targeting applications where SRAM-like simplicity meets DRAM density and cost efficiency.

FAQ

What is the maximum supported data rate for UPD48288209AFF-E24-DW1-A?

The UPD48288209AFF-E24-DW1-A operates at 400 MHz clock frequency with double-data-rate architecture, delivering an effective data rate of 800 MT/s. This is confirmed by the datasheet's AC Characteristics table specifying tCK = 2.5 ns and fCK = 400 MHz under the –E24 speed grade. The device maintains this rate across its full operating temperature range (0–95°C case temperature) when powered with VDD = 1.8 V ± 0.1 V and VDDQ = 1.5 V or 1.8 V ± 0.1 V.

Does UPD48288209AFF-E24-DW1-A support automatic refresh, and what is the refresh interval?

Yes, UPD48288209AFF-E24-DW1-A supports Auto Refresh (AREF) commands. The refresh interval is 8192 cycles per 32 ms for each bank, or equivalently 64K cycles per 32 ms for the entire device. This corresponds to a maximum refresh period of 32 ms, meeting JEDEC-standard requirements for DDR SDRAM. The refresh command is initiated via the REF# pin sampled on the rising edge of CK, and the device handles internal row address sequencing autonomously.

How is output impedance calibrated on UPD48288209AFF-E24-DW1-A?

Output impedance calibration on UPD48288209AFF-E24-DW1-A is performed using the ZQ pin. A precision external resistor (RQ) is connected from ZQ to VSS, setting DQ output drive strength to 0.2 × RQ. With RQ values between 125 Ω and 300 Ω, the device achieves programmable output impedance from 25 Ω to 60 Ω. This calibration is enabled via Mode Register Set (MRS) bit A8, and the resulting impedance is maintained across voltage and temperature variations without additional controller intervention.

What is the function of QVLD in UPD48288209AFF-E24-DW1-A, and how is it timed?

QVLD (Data Valid) in UPD48288209AFF-E24-DW1-A is an output signal that indicates when read data on DQ0–DQ8 is valid and stable. It is edge-aligned with QK0 and QK0#, with a guaranteed skew of ±0.3 ns (tQKVLD) relative to QK edges. This allows receivers to use QVLD as a synchronous strobe instead of relying solely on QK/QK# edges, improving timing margin in systems with significant clock-to-data skew. QVLD remains asserted for the full duration of valid data output during a burst.

Can UPD48288209AFF-E24-DW1-A operate with multiplexed addressing, or is it strictly non-multiplexed?

The UPD48288209AFF-E24-DW1-A supports both non-multiplexed and multiplexed address modes. While its default and optimized configuration uses non-multiplexed addressing (A0–A20 + BA0–BA2), the datasheet explicitly describes multiplexed mode operation in Sections 2.14–2.17. In multiplexed mode, row and column addresses share pins, reducing controller pin count at the cost of increased latency and command overhead. Mode selection is configured via the Mode Register Set (MRS) command, allowing system designers to choose based on controller capability and performance requirements.