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Home > Products > Integrated Circuits (ICs) > Memory > Controllers

Renesas UPD48288209FF-EF25-DW1-E2

Name: UPD48288209FF-EF25-DW1-E2
Brand: Renesas
SKU: UPD48288209FF-EF25-DW1-E2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPD48288209FF-EF25-DW1-E2

Manufacturer:: Renesas

Category:: Controllers

Package:: -

Datasheet:: UPD48288209FF-EF25-DW1-E2.pdf

Description:: DDR DRAM, 32MX9

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Product details

Overview

UPD48288209FF-EF25-DW1-E2 from NEC Electronics (now Renesas) is a 288M-bit synchronous double-data-rate low-latency DRAM with common I/O x9 organization (32M words × 9 bits × 8 banks), HSTL interface, and 144-pin TAPE FBGA (18.5 × 11 mm) package. It operates at 400 MHz with 2.5 ns cycle time and tRC = 20 ns, supporting burst lengths of 2/4/8 and programmable output impedance (25–60 Ω). It is used in high-speed embedded systems requiring deterministic latency and wide bit-width memory buffering.

For engineers reviewing the UPD48288209FF-EF25-DW1-E2 datasheet, UPD48288209FF-EF25-DW1-E2 pinout, UPD48288209FF-EF25-DW1-E2 application, or UPD48288209FF-EF25-DW1-E2 equivalent, key selection criteria include its non-multiplexed address architecture, differential CK/CK# and DK/DK# clocks, QVLD data-valid signaling, JTAG boundary scan support, and dual-voltage supply (2.5 V VEXT / 1.8 V VDD / 1.5 V or 1.8 V VDDQ).

Technical Context

This device implements a synchronous peripheral circuitry with integrated PLL and burst counter, latching all inputs on the rising edge of CK and CK#. Its SRAM-type interface eliminates address multiplexing by default, though multiplexing is optionally supported via mode register configuration.

The architecture features eight independent banks, auto-refresh capability (8192 cycles/32 ms per bank), and differential input data clocks (DK/DK#) aligned to DQ groups. Output data clocks (QK0/QK0#) are free-running and edge-aligned with DQ0–DQ8, while QVLD provides precise read-data validity timing referenced to QK edges.

Key Specifications

Parameter	Value and Actual Design Meaning
Density	288 Mbit total capacity, organized as 32M × 9 × 8 banks for efficient parallel access and bank interleaving.
Operating frequency	400 MHz - enables 800 MT/s data rate with double-data-rate operation on DQ bus.
Cycle time / tRC	2.5 ns / 20 ns - defines minimum clock period and row-cycle timing for sequential accesses across banks.
Interface standard	HSTL Class I - ensures high-speed signal integrity with controlled-impedance drivers and VREF-referenced inputs.
Supply voltages	VEXT = 2.5 V ± 0.12 V, VDD = 1.8 V ± 0.1 V, VDDQ = 1.5 V ± 0.1 V - segregated power domains reduce noise coupling between core logic and I/O.
Burst length	Programmable 2/4/8 - allows optimization of bus efficiency versus latency in burst-oriented applications like frame buffering.
Output impedance	User-programmable 25–60 Ω via ZQ pin - enables dynamic on-die termination matching to system trace impedance without external resistors.

Pinout & Package

Package: 144-pin TAPE FBGA, 18.5 mm × 11 mm footprint, lead-free compliant, with 0.8 mm ball pitch.

Pin/Terminal	Circuit Role	Design Meaning
CK, CK#	Differential input clock pair	Latches all address, command, and control inputs on rising edge of CK; defines system timing reference.
DQ0–DQ8	Bi-directional data I/O (x9)	9-bit common I/O bus; data sampled on both edges of DK/DK# during WRITE, output referenced to QK0/QK0# during READ.
QK0, QK0#	Differential output data clock	Free-running, edge-aligned with DQ0–DQ8 outputs; used by receiver to capture valid data synchronized to QVLD.
QVLD	Data valid strobe	Asserted synchronously with QK edges to indicate when DQ outputs contain stable, valid read data.
DM	Data mask input	Per-byte masking of WRITE data; sampled on both edges of DK to enable partial-word writes without read-modify-write.
ZQ	Impedance calibration reference	Connects to external resistor to VSS to set DQ output impedance to 0.2 × RQ (25–60 Ω range).
VREF	HSTL input reference	Nominally VDDQ/2; provides threshold reference for all address, command, and control inputs to ensure noise-immune switching.
VEXT, VDD, VDDQ, VTT, VSS, VSSQ	Power and ground supplies	Segregated supplies isolate core logic (VDD), I/O drivers (VDDQ/VTT), and external interface (VEXT); VSSQ separates DQ ground for reduced crosstalk.

Key Features

Feature	Design Value
SRAM-type interface	Non-multiplexed address bus (A0–A20) eliminates row/column address sequencing overhead, reducing access latency vs. standard SDRAM.
Double-data-rate architecture	Transfers data on both CK edges, achieving 800 MT/s at 400 MHz clock - doubles bandwidth over single-data-rate equivalents.
Programmable burst length	Configurable 2/4/8 bursts allow trade-off between bus utilization efficiency and worst-case latency in real-time buffer applications.
JTAG boundary scan	IEEE 1149.1 compliance enables in-system testability and interconnect verification without physical probe access.
Differential clocking	CK/CK# and DK/DK# pairs reject common-mode noise and improve timing margin in high-speed PCB layouts.

Applications

High-Speed Video Frame Buffer	Real-Time Signal Processing Engine
Use Scenario: Storing and streaming uncompressed HD video frames (1920×1080@60fps) in broadcast equipment with strict sub-microsecond latency constraints. IC Role / Device Role / Timing Role: Low-latency DRAM acting as primary frame buffer, interfaced directly to FPGA video processing pipeline using non-multiplexed addresses and QVLD-synchronized reads. Use Value: 2.5 ns cycle time and deterministic tQKQ skew (±0.25 ns) ensure pixel data delivery within tight timing windows, eliminating frame jitter.	Use Scenario: Real-time FFT and filtering of multi-channel sensor data in industrial vibration monitoring systems requiring continuous 16-bit sample buffering. IC Role / Device Role / Timing Role: High-bandwidth memory buffer feeding DSP cores, leveraging 8-bank interleaving and burst-8 transfers to sustain >3.2 GB/s effective throughput. Use Value: Programmable 25–60 Ω output impedance matches 50 Ω PCB traces, preserving signal integrity at 400 MHz clock rates without external termination.
Network Packet Buffer	Automotive ADAS Preprocessing Unit
Use Scenario: Temporary storage of variable-length Ethernet packets in Layer 2/3 switches before classification and forwarding decisions. IC Role / Device Role / Timing Role: Common I/O x9 DRAM providing flexible word-aligned access for packet header parsing and payload staging, controlled via CS#/WE# commands. Use Value: DM pin enables byte-level write masking, allowing efficient partial updates of packet metadata without full-word overwrites or RMW cycles.	Use Scenario: Intermediate storage of camera and radar fusion data in automotive surround-view systems operating at -40°C to +105°C ambient. IC Role / Device Role / Timing Role: Temperature-hardened memory subsystem supporting ASIL-B functional safety requirements, with auto-refresh guaranteed across full 0–95°C case temperature range. Use Value: Dual-voltage supply (2.5 V VEXT / 1.8 V VDD) and segregated VDDQ/VSSQ reduce power supply noise coupling, improving ADC sampling accuracy in mixed-signal SoC interfaces.

High-Speed Video Frame Buffer

Real-Time Signal Processing Engine

Use Scenario: Storing and streaming uncompressed HD video frames (1920×1080@60fps) in broadcast equipment with strict sub-microsecond latency constraints.

IC Role / Device Role / Timing Role: Low-latency DRAM acting as primary frame buffer, interfaced directly to FPGA video processing pipeline using non-multiplexed addresses and QVLD-synchronized reads.

Use Value: 2.5 ns cycle time and deterministic tQKQ skew (±0.25 ns) ensure pixel data delivery within tight timing windows, eliminating frame jitter.

Use Scenario: Real-time FFT and filtering of multi-channel sensor data in industrial vibration monitoring systems requiring continuous 16-bit sample buffering.

IC Role / Device Role / Timing Role: High-bandwidth memory buffer feeding DSP cores, leveraging 8-bank interleaving and burst-8 transfers to sustain >3.2 GB/s effective throughput.

Use Value: Programmable 25–60 Ω output impedance matches 50 Ω PCB traces, preserving signal integrity at 400 MHz clock rates without external termination.

Network Packet Buffer

Automotive ADAS Preprocessing Unit

Use Scenario: Temporary storage of variable-length Ethernet packets in Layer 2/3 switches before classification and forwarding decisions.

IC Role / Device Role / Timing Role: Common I/O x9 DRAM providing flexible word-aligned access for packet header parsing and payload staging, controlled via CS#/WE# commands.

Use Value: DM pin enables byte-level write masking, allowing efficient partial updates of packet metadata without full-word overwrites or RMW cycles.

Use Scenario: Intermediate storage of camera and radar fusion data in automotive surround-view systems operating at -40°C to +105°C ambient.

IC Role / Device Role / Timing Role: Temperature-hardened memory subsystem supporting ASIL-B functional safety requirements, with auto-refresh guaranteed across full 0–95°C case temperature range.

Use Value: Dual-voltage supply (2.5 V VEXT / 1.8 V VDD) and segregated VDDQ/VSSQ reduce power supply noise coupling, improving ADC sampling accuracy in mixed-signal SoC interfaces.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-latency DRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS42S16400F-7TL	16M × 16 organization, 144-pin TSOP-II, 143 MHz max, no QVLD or differential DK/QK clocks	Lower bandwidth (2.3 Gb/s), higher latency, no deterministic data-valid signaling	Select for cost-sensitive, non-real-time applications where QVLD timing and DDRx clocking are unnecessary.
MT47H64M8CB-3:J	64M × 8 organization, 60-ball BGA, 333 MHz, standard SDRAM interface with multiplexed addresses	Requires row/column address sequencing, lacks programmable impedance and JTAG scan	Choose when board space is constrained and legacy SDRAM controller compatibility is required over low-latency performance.

Compared with IS42S16400F-7TL and MT47H64M8CB-3:J, UPD48288209FF-EF25-DW1-E2 delivers superior timing determinism via QVLD and differential clocks, higher bandwidth through 400 MHz DDR operation, and design flexibility with non-multiplexed addressing and on-die termination - critical for real-time embedded memory subsystems.

Availability

UPD48288209FF-EF25-DW1-E2 is available at Aetrix Electronics and suitable for high-speed video frame buffering, real-time signal processing engines, network packet buffering, and automotive ADAS preprocessing units requiring stable component supply and long-term industrial availability.

Supply support for UPD48288209FF-EF25-DW1-E2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly NEC Electronics) is a global semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The μPD482882xxA family was designed as low-latency, high-density DRAM for real-time embedded systems demanding deterministic timing, SRAM-like interface simplicity, and robust signal integrity - targeting applications where standard SDRAM latency and interface complexity are unacceptable.

FAQ

What is the maximum operating frequency and corresponding cycle time for UPD48288209FF-EF25-DW1-E2?

The UPD48288209FF-EF25-DW1-E2 supports a maximum operating frequency of 400 MHz with a 2.5 ns clock cycle time and 20 ns row-cycle time (tRC). This is specified under the –E25 speed grade in the datasheet and requires VDD = 1.8 V ± 0.1 V, VEXT = 2.5 V ± 0.12 V, and VDDQ = 1.5 V ± 0.1 V. The device also supports lower-speed grades (–E18 at 533 MHz, –E33 at 300 MHz), but UPD48288209FF-EF25-DW1-E2 is specifically rated for the 400 MHz / 20 ns configuration.

Does UPD48288209FF-EF25-DW1-E2 support non-multiplexed addressing, and how does it affect system design?

Yes, UPD48288209FF-EF25-DW1-E2 implements a true SRAM-type interface with non-multiplexed addresses (A0–A20), eliminating the need for external address latching or row/column timing control. This reduces controller complexity and access latency compared to standard SDRAM. The device also supports optional multiplexed addressing via mode register configuration, but UPD48288209FF-EF25-DW1-E2 defaults to non-multiplexed operation - simplifying FPGA or ASIC memory controller design for deterministic timing-critical applications.

How is data validity ensured during READ operations in UPD48288209FF-EF25-DW1-E2?

UPD48288209FF-EF25-DW1-E2 uses the QVLD (Data Valid) signal, which is edge-aligned with QK0/QK0# output clocks and indicates precisely when DQ0–DQ8 outputs contain stable, valid read data. Unlike conventional SDRAM that relies on fixed latency counters, QVLD provides hardware-synchronized strobing - enabling receivers to capture data with minimal setup/hold margin. This feature is essential for UPD48288209FF-EF25-DW1-E2 in real-time systems where jitter-free data capture is required.

What power supply rails does UPD48288209FF-EF25-DW1-E2 require, and why are they segregated?

UPD48288209FF-EF25-DW1-E2 requires three independent supply rails: 2.5 V VEXT (core logic), 1.8 V VDD (internal logic), and 1.5 V VDDQ (I/O drivers), plus VTT (termination) and isolated grounds (VSSQ). Segregation minimizes noise coupling - especially between high-speed DQ switching and sensitive internal logic - improving signal integrity and timing margin. This architecture is critical for UPD48288209FF-EF25-DW1-E2's reliable operation at 400 MHz with sub-nanosecond skew tolerances.

Can UPD48288209FF-EF25-DW1-E2 be used in automotive applications, and what temperature rating does it support?

Yes, UPD48288209FF-EF25-DW1-E2 is qualified for industrial temperature operation with an operating case temperature range of 0°C to 95°C, making it suitable for under-hood and cabin-mounted automotive ADAS preprocessing units. While not AEC-Q100 certified, its thermal specification, robust HSTL I/O, and auto-refresh stability across the full range support deployment in non-safety-critical automotive subsystems. For UPD48288209FF-EF25-DW1-E2, Renesas documentation confirms sustained functionality at TC = 95°C with proper thermal management.

UPD48288209FF-EF25-DW1-E2 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Controller Type:: -

Voltage - Supply:: -

Operating Temperature:: -

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Supplier Device Package:: -

UPD48288209FF-EF25-DW1-E2 FAQ

1.How can I place an order for UPD48288209FF-EF25-DW1-E2 through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD48288209FF-EF25-DW1-E2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD48288209FF-EF25-DW1-E2 reliable?

The price and inventory of UPD48288209FF-EF25-DW1-E2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD48288209FF-EF25-DW1-E2 is usually 5 days.

3.What payment methods are accepted for UPD48288209FF-EF25-DW1-E2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD48288209FF-EF25-DW1-E2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPD48288209FF-EF25-DW1-E2?

UPD48288209FF-EF25-DW1-E2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD48288209FF-EF25-DW1-E2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD48288209FF-EF25-DW1-E2?

For technical support, including UPD48288209FF-EF25-DW1-E2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD48288209FF-EF25-DW1-E2 requirements.

6.How does Aetrix verify that UPD48288209FF-EF25-DW1-E2 is sourced from the original manufacturer or authorized distributors?

All UPD48288209FF-EF25-DW1-E2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD48288209FF-EF25-DW1-E2 meets industry standards.

7.What is the process for return or replacement of UPD48288209FF-EF25-DW1-E2?

All UPD48288209FF-EF25-DW1-E2 units undergo pre-shipment inspection (PSI). If there is an issue with UPD48288209FF-EF25-DW1-E2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD48288209FF-EF25-DW1-E2 part is unused and in its original packaging.

Return procedure for UPD48288209FF-EF25-DW1-E2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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