Renesas UPD48288218AFF-E24-DW1-E2

Overview

UPD48288218AFF-E24-DW1-E2 from NEC Electronics (now Renesas) is a 288M-bit synchronous double-data-rate low-latency DRAM with common I/O x18 organization (16,777,216 words × 18 bits), 8 banks, HSTL I/O interface, and 144-pin TAPE FBGA (18.5 × 11 mm) package. It operates at 400 MHz (2.5 ns cycle time), supports programmable burst lengths (2/4/8), and delivers high-density, low-voltage memory for real-time video buffering in broadcast infrastructure.

For engineers reviewing the UPD48288218AFF-E24-DW1-E2 datasheet, UPD48288218AFF-E24-DW1-E2 pinout, UPD48288218AFF-E24-DW1-E2 application, or UPD48288218AFF-E24-DW1-E2 equivalent, key selection criteria include its 400 MHz DDR timing (tCK = 2.5 ns), differential CK/CK# and DK/DK# clocks, QVLD data-valid signaling, user-programmable output impedance (25–60 Ω), and JTAG boundary-scan support for production testability.

Technical Context

This device implements a synchronous peripheral architecture with integrated PLL, burst counter, and SRAM-type command interface. It uses non-multiplexed address inputs (A0–A19), bank address inputs (BA0–BA2), and dual differential clock domains: CK/CK# for command/address latching and DK/DK# for write data capture.

It supports Auto Refresh with 8192 cycles per bank every 32 ms and features dedicated output data clocks (QK0/QK0#, QK1/QK1#) edge-aligned to DQ outputs, plus QVLD for precise read-data validity indication-enabling deterministic timing in high-throughput streaming applications.

Key Specifications

Pinout & Package

144-pin TAPE FBGA (18.5 mm × 11 mm), lead-free, with 0.8 mm ball pitch. Package supports automated assembly and thermal performance suitable for industrial temperature operation (Tc = 0–95°C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-latency DDR DRAM applications.

Compared with IS42S16400F-6BLI and MT47H64M16HR-3E:H, UPD48288218AFF-E24-DW1-E2 delivers true DDR bandwidth with QVLD-synchronized reads, ZQ-calibrated outputs for impedance matching, and SRAM-like command simplicity-making it uniquely suited for real-time video and imaging where timing predictability outweighs raw density.

Availability

UPD48288218AFF-E24-DW1-E2 is available at Aetrix Electronics and suitable for broadcast video frame buffering, medical imaging acquisition, industrial machine vision, and avionics data recording requiring stable component supply across extended product lifecycles.

Supply support for UPD48288218AFF-E24-DW1-E2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation (formerly NEC Electronics) is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The μPD48288xxx family was designed specifically for low-latency, high-bandwidth synchronous memory applications in broadcast, medical, and test equipment-emphasizing deterministic timing, HSTL signal integrity, and simplified controller integration over commodity DRAM cost scaling.

FAQ

What is the exact memory organization of UPD48288218AFF-E24-DW1-E2?

UPD48288218AFF-E24-DW1-E2 is organized as 16,777,216 words × 18 bits across 8 independent banks. This yields 288 Mbit total density with non-multiplexed address inputs A0–A19 and bank address inputs BA0–BA2. The x18 common I/O configuration eliminates external data-width conversion logic required by narrower devices.

Does UPD48288218AFF-E24-DW1-E2 support differential input data clocks?

Yes, UPD48288218AFF-E24-DW1-E2 supports differential input data clocks DK and DK# for sampling WRITE data on both edges. This is distinct from the command clock CK/CK# and enables robust data capture in electrically noisy environments. DK/DK# are referenced to VREF and must meet specified slew rate and voltage thresholds per the datasheet.

How does the QVLD signal function in UPD48288218AFF-E24-DW1-E2?

QVLD is an output signal in UPD48288218AFF-E24-DW1-E2 that indicates valid read data on the DQ bus. It is edge-aligned with QK0/QK0# and QK1/QK1# output clocks, providing precise, zero-latency knowledge of data readiness without requiring controller-based timing calculations or fixed delay tables.

Can UPD48288218AFF-E24-DW1-E2 operate with a 1.5 V VDDQ supply?

Yes, UPD48288218AFF-E24-DW1-E2 supports either 1.5 V ±0.1 V or 1.8 V ±0.1 V for VDDQ. The 1.5 V option reduces I/O power consumption and is compatible with lower-voltage system designs, provided VDDQ does not exceed VDD (1.8 V) and all AC/DC operating conditions-including VIH/VIL thresholds relative to VREF-are maintained.

Is JTAG boundary scan supported on UPD48288218AFF-E24-DW1-E2?

Yes, UPD48288218AFF-E24-DW1-E2 implements full IEEE 1149.1 JTAG boundary scan via TMS, TCK, TDI, and TDO pins. This enables automated PCB interconnect testing and in-system programming verification. Pins may be left unconnected if JTAG is unused, except TCK which must be tied to VSS per datasheet guidance.