Renesas UPD48288218AFF-E33-DW1-A

Overview

UPD48288218AFF-E33-DW1-A from NEC Electronics (now Renesas) is a 288M-bit synchronous double-data-rate low-latency DRAM with common I/O x18 organization (16M words × 18 bits × 8 banks), HSTL I/O interface, 3.3 ns cycle time at 300 MHz, and 144-pin TAPE FBGA (18.5 × 11 mm) package. It delivers high-density, low-voltage memory for real-time embedded systems requiring deterministic timing and burst-mode data throughput.

For engineers reviewing the UPD48288218AFF-E33-DW1-A datasheet, UPD48288218AFF-E33-DW1-A pinout, UPD48288218AFF-E33-DW1-A application, or UPD48288218AFF-E33-DW1-A equivalent, key selection criteria include its non-multiplexed address architecture, differential CK/CK# and DK/DK# clocks, programmable output impedance (25–60 Ω), JTAG boundary scan support, and SRAM-type command interface with auto-refresh capability.

Technical Context

This device implements a double-data-rate architecture synchronized to differential input clocks (CK/CK#) and differential input data clocks (DK/DK#), with free-running differential output data clocks (QK0/QK0#, QK1/QK1#) edge-aligned to read data. It integrates an on-die PLL, burst counter, and programmable impedance output buffers tuned via ZQ pin.

It supports non-multiplexed addressing (A0–A19), bank-select inputs (BA0–BA2), and command decoding via CS#, WE#, and REF# sampled on CK rising edges. The 8-bank memory array enables interleaved access to sustain bandwidth, while QVLD provides explicit data validity signaling aligned to QK edges.

Key Specifications

Pinout & Package

144-pin TAPE FBGA (18.5 mm × 11 mm), lead-free, with 0.8 mm ball pitch. Package supports automated assembly and thermal dissipation suitable for high-density PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-latency DDR DRAM applications.

Compared with IS42S16160F-6BLI and MT46H32M18LFBF-6 IT, UPD48288218AFF-E33-DW1-A uniquely combines HSTL I/O, differential clocks, QVLD signaling, and non-multiplexed addressing - enabling simpler controller integration and tighter timing margins in deterministic real-time systems.

Availability

UPD48288218AFF-E33-DW1-A is available at Aetrix Electronics and suitable for high-speed test equipment, industrial PLC memory expansion, medical imaging data buffering, and avionics display frame stores requiring stable component supply across extended product lifecycles.

Supply support for UPD48288218AFF-E33-DW1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation (formerly NEC Electronics) is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The μPD482882xxA family was designed specifically for deterministic, low-latency memory applications in real-time embedded systems where SRAM density is insufficient and standard SDRAM timing complexity is unacceptable.

FAQ

What is the exact memory organization of UPD48288218AFF-E33-DW1-A?

UPD48288218AFF-E33-DW1-A is organized as 16,777,216 words × 18 bits × 8 banks (288 M-bit total). This x18 common I/O configuration provides 18-bit parallel data width with independent bank addressing, enabling high bandwidth without external data bus widening. The part uses non-multiplexed addresses A0–A19 and bank address inputs BA0–BA2.

Does UPD48288218AFF-E33-DW1-A support both 1.5 V and 1.8 V VDDQ operation?

Yes, UPD48288218AFF-E33-DW1-A supports VDDQ = 1.5 V ± 0.1 V or 1.8 V ± 0.1 V. The datasheet specifies that VDDQ must not exceed VDD (1.8 V ± 0.1 V), so 1.5 V operation is recommended when lower power or reduced noise coupling is required. Both settings are fully characterized across the 0–95°C operating range.

How does the ZQ pin function in UPD48288218AFF-E33-DW1-A?

The ZQ pin in UPD48288218AFF-E33-DW1-A is used for output driver impedance calibration. Connecting ZQ to a precision resistor (RQ) to VSS sets DQ output impedance to 0.2 × RQ, allowing user-programmable values from 25 Ω to 60 Ω. This feature enables dynamic matching to PCB trace impedance without requiring external termination resistors on every DQ line.

Is UPD48288218AFF-E33-DW1-A pin-compatible with other members of the μPD482882xxA family?

UPD48288218AFF-E33-DW1-A shares the same 144-pin TAPE FBGA package and pinout with μPD48288209A and μPD48288236A variants. However, data bus width differs: x9 uses DQ0–DQ8, x18 uses DQ0–DQ17, and x36 uses DQ0–DQ35. Thus, while mechanical and signal pin locations match, PCB layout must accommodate the specific DQ count and associated QK/DK routing for each variant.

What is the role of QVLD in UPD48288218AFF-E33-DW1-A timing?

QVLD (Data Valid) in UPD48288218AFF-E33-DW1-A is an output signal edge-aligned with QK0/QK0# that explicitly indicates when DQ outputs contain valid read data. Unlike fixed-latency interfaces, QVLD eliminates the need for controller wait-state insertion or complex latency tracking - the controller samples DQ only when QVLD is asserted, ensuring robust capture under process/voltage/temperature variation.