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Renesas UPD48288218AFF-E33-DW1-E2
- Part No.:
- UPD48288218AFF-E33-DW1-E2
- Manufacturer:
- Renesas
- Category:
- Controllers
- Package:
- -
- Datasheet:
-
UPD48288218AFF-E33-DW1-E2.pdf
- Description:
- DDR DRAM, 16MX18
- Quantity:
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Inventory:12,000
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Product details
Overview
UPD48288218AFF-E33-DW1-E2 from NEC Electronics (now Renesas) is a 288M-bit synchronous double-data-rate low-latency DRAM with common I/O x18 organization (16,777,216-word × 18-bit), 8 banks, HSTL I/O interface, and 144-pin TAPE FBGA (18.5 × 11 mm) package. It operates at 300 MHz with 3.3 ns cycle time (tRC = 20 ns), 1.8 V core supply (VDD), and supports burst lengths of 2/4/8 for high-throughput memory buffering in real-time video processing systems.
For engineers reviewing the UPD48288218AFF-E33-DW1-E2 datasheet, UPD48288218AFF-E33-DW1-E2 pinout, UPD48288218AFF-E33-DW1-E2 application, or UPD48288218AFF-E33-DW1-E2 equivalent, key selection criteria include its 300 MHz DDR operation with differential CK/CK# and DK/DK#, programmable output impedance (25–60 Ω), QVLD data-valid signaling, and JTAG boundary-scan support for system-level testability.
Technical Context
This device implements a synchronous peripheral circuitry architecture with integrated burst counter and PLL-based clock generation. All address, command, and control inputs are registered on the rising edge of differential CK/CK#, while data is sampled on both edges of DK/DK# (or DK0/DK0# and DK1/DK1# in x36 mode).
It uses non-multiplexed addresses (A0–A19), supports SRAM-type interface timing, and provides differential output data clocks (QK0/QK0# aligned with DQ0–DQ8; QK1/QK1# aligned with DQ9–DQ17) with guaranteed tQKQ skew ≤ ±0.35 ns. Refresh is managed via Auto Refresh commands (64K cycles / 32 ms total).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 288 Mbit total capacity, organized as 16M × 18-bit across 8 banks for parallel data throughput. |
| Operating frequency | 300 MHz - enables 600 MT/s data rate with double-data-rate architecture. |
| Cycle time (tRC) | 20 ns - defines minimum row-to-row activation interval; impacts memory bandwidth in burst-intensive workloads. |
| I/O interface | HSTL Class I - ensures signal integrity at high speeds with controlled-impedance drivers and VREF-referenced inputs. |
| Supply voltages | VEXT = 2.5 V ± 0.13 V (I/O power), VDD = 1.8 V ± 0.1 V (core), VDDQ = 1.5 V or 1.8 V ± 0.1 V (I/O driver power). |
| Burst length | Programmable 2/4/8 - allows optimization of bus efficiency vs. latency for specific access patterns. |
| Operating temperature | Tc = 0 to 95°C - qualified for industrial-grade embedded applications without derating. |
Pinout & Package
Package: 144-pin TAPE FBGA, 18.5 mm × 11 mm footprint, lead-free compliant, with exposed thermal pad (not electrically connected). Pinout corresponds to Common I/O x18 configuration per datasheet Page 4.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK, CK# | Differential input clock | Latches all address/control inputs on rising edge of CK; requires matched trace routing and termination. |
| DK, DK# | Differential input data clock | Samples DQ0–DQ17 on both edges; defines write timing window relative to data valid window. |
| QK0, QK0#, QK1, QK1# | Differential output data clocks | Edge-aligned with respective DQ groups (QK0 with DQ0–DQ8; QK1 with DQ9–DQ17); used by receiver to capture data. |
| QVLD | Data valid indicator | Asserted synchronously with QKx edges to signal when output data is stable and valid. |
| DM | Data mask input | Enables byte masking during WRITE operations; sampled on both edges of DK to align with data. |
| ZQ | Impedance calibration reference | Connects to external resistor (to VSS or VDDQ) to program output driver impedance between 25 Ω and 60 Ω. |
| VREF | Input reference voltage | Nominally VDDQ/2; sets threshold for HSTL input buffers; must be decoupled and noise-isolated. |
| CS#, WE#, REF# | Command control inputs | Active-low signals decoded with CK edge to execute chip select, write, or refresh commands. |
Key Features
| Feature | Design Value |
|---|---|
| Double-data-rate architecture | Delivers 600 MT/s effective bandwidth using both clock edges, doubling throughput versus single-data-rate DRAM. |
| Programmable output impedance | 25 Ω to 60 Ω range via ZQ pin and Mode Register, enabling precise matching to PCB trace impedance for signal integrity. |
| Differential clock and data paths | CK/CK#, DK/DK#, QKx/QKx# reduce jitter sensitivity and improve noise immunity in high-speed memory interfaces. |
| JTAG boundary scan | IEEE 1149.1 compliance supports structural testing of interconnects and board-level diagnostics without physical probe access. |
| SRAM-type interface | Non-multiplexed address bus (A0–A19) simplifies controller design and eliminates address setup/hold timing complexity. |
Applications
| Video Frame Buffering | Real-Time Signal Processing |
|---|---|
Use Scenario: Storing uncompressed HD video frames (1920×1080@60fps) in broadcast equipment requiring zero-frame-drop buffering. IC Role / Device Role / Timing Role: High-bandwidth, low-latency frame memory with burst-length-8 reads/writes synchronized to pixel clock domain. Use Value: 600 MT/s data rate and 20 ns tRC enable sustained 4.8 GB/s read/write throughput needed for dual-stream 10-bit YUV422 video. | Use Scenario: Real-time FFT and filtering in radar baseband processors where deterministic memory access latency is critical. IC Role / Device Role / Timing Role: Low-jitter, deterministic-access memory buffer interfaced to FPGA-based DSP engines via HSTL I/O. Use Value: Differential QKx clocks and QVLD signal provide sub-nanosecond timing alignment for sample-accurate processing pipelines. |
| Industrial Imaging Systems | Medical Ultrasound Beamforming |
Use Scenario: Capturing and buffering high-resolution line-scan images (16k×10k pixels) in automated optical inspection (AOI) platforms. IC Role / Device Role / Timing Role: Burst-mode memory with programmable BL=4/8 supporting rapid line-by-line acquisition and DMA transfer. Use Value: 16M×18-bit organization matches 16-bit ADC output width, eliminating bit-packing overhead and reducing controller logic complexity. | Use Scenario: Delay-line storage for channelized echo data in digital beamformers requiring precise phase coherence across 128+ channels. IC Role / Device Role / Timing Role: Synchronous, low-jitter memory with differential DK/QK clocks ensuring nanosecond-level inter-channel timing alignment. Use Value: ±0.35 ns tQKQ skew guarantee ensures consistent sampling point across all DQ lines, preserving beamformer coherence. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-latency DDR DRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H64M16HR-37E | 64M×16-bit, 400 MHz (2.5 ns tCK), 1.8 V VDD only, no VEXT; uses SSTL-18, not HSTL. | Designed for standard DDR2 controllers; lacks QVLD and differential DK/QK outputs. | Select if migrating to JEDEC-compliant DDR2 infrastructure with existing SSTL-18 PHY support. |
| IS42S16160F-6BL | 16M×16-bit, 166 MHz (6 ns tCK), 3.3 V supply, asynchronous interface; no PLL, no differential clocks. | Targeted at legacy SRAM-like systems; no burst-length programming or impedance tuning. | Choose only for cost-sensitive, low-speed designs where 600 MT/s bandwidth and timing precision are unnecessary. |
Compared with MT47H64M16HR-37E and IS42S16160F-6BL, UPD48288218AFF-E33-DW1-E2 delivers higher bandwidth via HSTL I/O and differential clocking, supports tighter timing control through QVLD and programmable impedance, and maintains compatibility with legacy NEC/Renesas memory controller IP blocks.
Availability
UPD48288218AFF-E33-DW1-E2 is available at Aetrix Electronics and suitable for industrial imaging systems, medical ultrasound beamformers, broadcast video frame buffers, and real-time signal processing applications requiring stable component supply and long-term obsolescence management.
Supply support for UPD48288218AFF-E33-DW1-E2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation (formerly NEC Electronics) is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and communications markets.
The μPD48288xxx family was designed as high-performance, low-latency DDR DRAMs for real-time embedded systems demanding deterministic timing, differential signaling, and SRAM-like interface simplicity - particularly in video, imaging, and radar processing.
FAQ
What is the maximum supported burst length for UPD48288218AFF-E33-DW1-E2?
UPD48288218AFF-E33-DW1-E2 supports programmable burst lengths of 2, 4, or 8 via Mode Register Set (MRS) command. Burst length determines the number of consecutive data transfers per READ or WRITE command and directly affects bus efficiency and latency trade-offs in the target application. The device defaults to BL=2 after power-on reset.
Does UPD48288218AFF-E33-DW1-E2 require an external termination voltage (VTT)?
Yes, UPD48288218AFF-E33-DW1-E2 requires VTT = VREF (nominally VDDQ/2) for HSTL Class I I/O termination. VTT must track VREF within ±5% and be decoupled locally to minimize noise coupling into the reference path. This is mandatory for stable input buffer operation and signal integrity at 300 MHz.
Can UPD48288218AFF-E33-DW1-E2 operate with VDDQ set to 1.5 V instead of 1.8 V?
Yes, UPD48288218AFF-E33-DW1-E2 supports VDDQ = 1.5 V ± 0.1 V or 1.8 V ± 0.1 V. When using 1.5 V, VDD must remain at 1.8 V ± 0.1 V and VDDQ must not exceed VDD. This flexibility allows optimization for lower I/O power consumption while maintaining core performance in UPD48288218AFF-E33-DW1-E2.
How is refresh handled in UPD48288218AFF-E33-DW1-E2?
UPD48288218AFF-E33-DW1-E2 supports Auto Refresh (AREF) commands. Each bank requires 8192 refresh cycles every 32 ms, and the full device requires 64K cycles over the same period. Refresh is initiated by asserting REF# with CS# LOW on the rising edge of CK. No external refresh counter is needed - timing is managed internally.
What is the function of the ZQ pin on UPD48288218AFF-E33-DW1-E2?
The ZQ pin on UPD48288218AFF-E33-DW1-E2 enables on-die impedance calibration. Connected to an external resistor (typically 240 Ω to VSS), it programs the output driver impedance between 25 Ω and 60 Ω. This calibration is activated via Mode Register Bit A8 and ensures precise matching to PCB trace impedance, reducing signal reflections and improving timing margins in UPD48288218AFF-E33-DW1-E2.
UPD48288218AFF-E33-DW1-E2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Controller Type:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPD48288218AFF-E33-DW1-E2 FAQ
1.How can I place an order for UPD48288218AFF-E33-DW1-E2 through Aetrix?
Please submit a Request for Quotation (RFQ) for UPD48288218AFF-E33-DW1-E2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPD48288218AFF-E33-DW1-E2 reliable?
The price and inventory of UPD48288218AFF-E33-DW1-E2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD48288218AFF-E33-DW1-E2 is usually 5 days.
3.What payment methods are accepted for UPD48288218AFF-E33-DW1-E2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD48288218AFF-E33-DW1-E2 transactions.
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4.How is shipping managed for UPD48288218AFF-E33-DW1-E2?
UPD48288218AFF-E33-DW1-E2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPD48288218AFF-E33-DW1-E2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPD48288218AFF-E33-DW1-E2?
For technical support, including UPD48288218AFF-E33-DW1-E2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD48288218AFF-E33-DW1-E2 requirements.
6.How does Aetrix verify that UPD48288218AFF-E33-DW1-E2 is sourced from the original manufacturer or authorized distributors?
All UPD48288218AFF-E33-DW1-E2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD48288218AFF-E33-DW1-E2 meets industry standards.
7.What is the process for return or replacement of UPD48288218AFF-E33-DW1-E2?
All UPD48288218AFF-E33-DW1-E2 units undergo pre-shipment inspection (PSI). If there is an issue with UPD48288218AFF-E33-DW1-E2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPD48288218AFF-E33-DW1-E2 part is unused and in its original packaging.
Return procedure for UPD48288218AFF-E33-DW1-E2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
UPD48288218AFF-E33-DW1-E2 Tags
-
BQ2201SN-N
Texas Instruments
-
DS1314S+
Analog Devices Inc./Maxim Integrated
-
BQ2205LYPW
Texas Instruments
-
MXD1210CSA+
Analog Devices Inc./Maxim Integrated
-
MXD1210CPA+
Analog Devices Inc./Maxim Integrated
-
4RCD0232KC1ATG
Renesas
-
DS1312S-2+
Analog Devices Inc./Maxim Integrated
-
DS1314S-2+T&R
Analog Devices Inc./Maxim Integrated
-
DS1321S+
Analog Devices Inc./Maxim Integrated
-
DS1312S+
Analog Devices Inc./Maxim Integrated
-
MXD1210ESA+
Analog Devices Inc./Maxim Integrated
-
DS1321E+
Analog Devices Inc./Maxim Integrated
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