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Renesas UPD48288236AF1-E50-DW1-A
- Part No.:
- UPD48288236AF1-E50-DW1-A
- Manufacturer:
- Renesas
- Category:
- Controllers
- Package:
- -
- Datasheet:
-
UPD48288236AF1-E50-DW1-A.pdf
- Description:
- DDR DRAM, 16MX18
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Product details
Overview
UPD48288236AF1-E50-DW1-A from NEC Electronics (now Renesas) is a 8,388,608-word × 36-bit synchronous double-data-rate Low Latency DRAM with HSTL I/O, 144-pin TAPE FBGA (18.5 × 11 mm), and 288M-bit density. It operates at 300 MHz (3.3 ns cycle time), supports burst lengths of 2/4/8, and delivers high-bandwidth memory for real-time video buffering and packet processing in telecom infrastructure.
For engineers reviewing the UPD48288236AF1-E50-DW1-A datasheet, UPD48288236AF1-E50-DW1-A pinout, UPD48288236AF1-E50-DW1-A application, or UPD48288236AF1-E50-DW1-A equivalent, this page provides verified technical context, validated pin functions, confirmed x36 common-I/O architecture, and precise AC/DC specifications per Rev.3.00 datasheet R10DS0097EJ0300.
Technical Context
This device implements a non-multiplexed address interface with 19 address inputs (A0–A18), three bank address lines (BA0–BA2), and dual differential input data clocks (DK0/DK0# and DK1/DK1#) aligned to separate 18-bit DQ groups. Its PLL-based timing generator synchronizes all operations to CK/CK#, enabling deterministic read/write latency under burst access patterns.
The architecture integrates eight independent banks, auto-refresh support (64K cycles / 32 ms total), programmable output impedance (25–60 Ω via ZQ), and JTAG boundary-scan compliance (IEEE 1149.1). Data validity is signaled by QVLD edge-aligned to QK0/QK0# and QK1/QK1#, with DQ0–DQ35 organized as two 18-bit sub-buses each referenced to dedicated DK/QK pairs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 288M bit (8M words × 36 bits × 8 banks) |
| Operating frequency | 300 MHz - enables 600 MT/s data rate with DDR architecture |
| Cycle time | 3.3 ns @ tRC = 20 ns - defines minimum row-to-row activation interval |
| I/O standard | HSTL Class I - ensures signal integrity at high-speed with controlled-impedance outputs |
| Supply voltages | VEXT = 2.5 V ± 0.13 V, VDD = 1.8 V ± 0.1 V, VDDQ = 1.5 V or 1.8 V ± 0.1 V - decoupled power domains reduce noise coupling |
| Burst length | Programmable 2/4/8 - matches varying data payload sizes without command overhead |
| Refresh rate | 64K cycles / 32 ms total - meets JEDEC requirements for thermal stability |
Pinout & Package
Package: 144-pin TAPE FBGA, 18.5 mm × 11 mm, lead-free compliant. Pinout corresponds to Common I/O x36 configuration per datasheet Page 5.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK, CK# | Differential system clock inputs | Latch all address/control on rising edge of CK; define timing reference for all synchronous operations |
| DK0/DK0#, DK1/DK1# | Differential input data clocks | DK0 references DQ0–DQ17; DK1 references DQ18–DQ35 - enables independent timing control per 18-bit lane |
| QK0/QK0#, QK1/QK1# | Differential output data clocks | QK0 aligned with DQ0–DQ17; QK1 aligned with DQ18–DQ35 - provides source-synchronous timing for receiver capture |
| DQ0–DQ35 | 36-bit bidirectional data bus | Common I/O structure - same pins used for read and write; supports burst transfers without direction control |
| CS#, WE#, REF#, DM | Command and mask control inputs | CS# enables command decoding; WE# selects WRITE; REF# triggers refresh; DM masks write data on both DK edges |
| A0–A18, BA0–BA2 | Row/column and bank address inputs | Non-multiplexed addressing - eliminates address setup/hold timing constraints of multiplexed DRAMs |
| VREF, ZQ, VTT | Reference, impedance tuning, termination supplies | VREF sets HSTL input threshold; ZQ calibrates DQ output impedance (25–60 Ω); VTT supplies on-die termination voltage |
Key Features
| Feature | Design Value |
|---|---|
| SRAM-type interface | Non-multiplexed address and command bus - eliminates complex address sequencing required in standard SDRAM |
| Double-data-rate architecture | Transfers data on both CK edges - doubles effective bandwidth without increasing clock frequency |
| User-programmable output impedance | 25 Ω to 60 Ω via ZQ resistor - enables dynamic matching to PCB trace impedance across process/voltage/temperature |
| Differential input/output clocks | CK/CK#, DKx/DKx#, QKx/QKx# - suppresses common-mode noise and improves jitter tolerance |
| Data valid signaling | QVLD output edge-aligned to QKx - removes uncertainty in data capture window for high-speed receivers |
Applications
| Video Frame Buffering | Network Packet Processing |
|---|---|
Use Scenario: Storing uncompressed HD video frames (1920×1080×24bpp) in real-time encoder/decoder pipelines. IC Role / Device Role / Timing Role: High-bandwidth, low-latency frame buffer with burst-length flexibility to match variable GOP structures. Use Value: 36-bit wide bus and 300 MHz DDR operation deliver 2.16 GB/s peak bandwidth - sufficient for dual-stream 1080p60 encoding. | Use Scenario: Temporary storage of variable-length Ethernet/IP packets in Layer 3 switches with deep packet inspection. IC Role / Device Role / Timing Role: Packet buffer supporting rapid random-access reads/writes with minimal latency between ingress and egress queues. Use Value: Non-multiplexed addressing and SRAM-like command interface reduce average access latency to <15 ns - critical for line-rate forwarding. |
| Radar Signal Processing | Medical Imaging Acquisition |
Use Scenario: Capturing and buffering high-speed ADC samples (1 GSPS, 16-bit) from phased-array radar front-ends. IC Role / Device Role / Timing Role: Low-jitter, deterministic memory for time-critical sample streaming with burst-aligned DMA transfers. Use Value: Differential DK/QK clocks and QVLD signaling ensure ±0.25 ns data-valid window - preserves timing fidelity for FFT-based beamforming. | Use Scenario: Real-time acquisition of CT/MRI scan data requiring lossless buffering before reconstruction algorithms. IC Role / Device Role / Timing Role: High-reliability, temperature-stable memory operating continuously at Tc = 95°C in enclosed imaging chassis. Use Value: 0–95°C case temperature rating and auto-refresh compliance guarantee uninterrupted operation during multi-minute scans. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-latency DRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS42S32800F-6BLI | 32M×32 SDR SDRAM, 166 MHz, 3.3 V core, no differential clocks or QVLD | Lacks source-synchronous timing; higher latency due to multiplexed addressing and command pipeline | Select when cost sensitivity outweighs bandwidth/latency requirements and system clocking is single-ended |
| MT47H64M4BP-3:G | 64M×4 DDR2 SDRAM, 400 MHz, 1.8 V, 84-ball FBGA, no ZQ calibration | Higher density but narrower bus; no programmable impedance or dedicated QVLD signal | Choose for legacy DDR2-compatible designs where board layout rework for x36 interface is prohibitive |
Compared with IS42S32800F-6BLI and MT47H64M4BP-3:G, UPD48288236AF1-E50-DW1-A delivers superior timing determinism via differential DK/QK clocks and QVLD, plus finer impedance control through ZQ - making it uniquely suited for real-time signal capture where jitter-induced data errors must be eliminated.
Availability
UPD48288236AF1-E50-DW1-A is available at Aetrix Electronics and suitable for video frame buffering, network packet processing, radar signal acquisition, and medical imaging systems requiring stable component supply and long-term industrial-grade availability.
Supply support for UPD48288236AF1-E50-DW1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly NEC Electronics) is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and communications markets.
The μPD482882xxA family was designed specifically for low-latency, high-bandwidth applications demanding deterministic timing - such as real-time video, telecom baseband, and test equipment - where conventional SDRAM architectures introduce unacceptable access jitter.
FAQ
What is the exact organization and density of UPD48288236AF1-E50-DW1-A?
UPD48288236AF1-E50-DW1-A is organized as 8,388,608 words × 36 bits across eight internal banks, delivering a total density of 288 megabits. This configuration is explicitly defined in the datasheet's Ordering Information table and Pin Arrangement section for the x36 Common I/O variant. The part uses non-multiplexed addressing with A0–A18 and BA0–BA2, and supports burst lengths of 2, 4, or 8.
Does UPD48288236AF1-E50-DW1-A support differential input data clocks?
Yes, UPD48288236AF1-E50-DW1-A supports two pairs of differential input data clocks: DK0/DK0# for DQ0–DQ17 and DK1/DK1# for DQ18–DQ35. This is confirmed in the Pin Description (Page 6), Pin Arrangement (Page 5), and AC Characteristics tables of the R10DS0097EJ0300 datasheet. Each DK pair is independently timed to its respective 18-bit DQ group to maintain signal integrity at 300 MHz DDR operation.
What are the valid supply voltage ranges for VDDQ on UPD48288236AF1-E50-DW1-A?
UPD48288236AF1-E50-DW1-A supports VDDQ at either 1.5 V ± 0.1 V or 1.8 V ± 0.1 V, as specified in the Recommended DC Operating Conditions table (Page 10) and Ordering Information (Page 2). The selection determines compatible I/O standards and affects output drive strength. VDDQ must not exceed VDD, and VREF is derived as 0.49–0.51 × VDDQ per datasheet Section 1.
How does the ZQ pin function on UPD48288236AF1-E50-DW1-A?
The ZQ pin on UPD48288236AF1-E50-DW1-A enables user-programmable output impedance calibration between 25 Ω and 60 Ω. As described on Page 7, connecting ZQ to VSS selects minimum impedance mode, while connecting to VDDQ selects maximum. The actual value is set to 0.2 × RQ, where RQ is an external resistor from ZQ to VSS. Mode Register Bit A8 controls activation of this feature.
Is UPD48288236AF1-E50-DW1-A compatible with JTAG boundary-scan testing?
Yes, UPD48288236AF1-E50-DW1-A includes full IEEE 1149.1 JTAG boundary-scan support using TMS, TDI, TCK, and TDO pins (Pages 3–7). The JTAG interface allows for interconnect testing and in-system programming verification. Pins are functional only when JTAG is enabled; otherwise, TMS/TDI may be left unconnected and TCK must be tied to VSS per datasheet guidance.
UPD48288236AF1-E50-DW1-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Controller Type:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPD48288236AF1-E50-DW1-A FAQ
1.How can I place an order for UPD48288236AF1-E50-DW1-A through Aetrix?
Please submit a Request for Quotation (RFQ) for UPD48288236AF1-E50-DW1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPD48288236AF1-E50-DW1-A reliable?
The price and inventory of UPD48288236AF1-E50-DW1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD48288236AF1-E50-DW1-A is usually 5 days.
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPD48288236AF1-E50-DW1-A?
For technical support, including UPD48288236AF1-E50-DW1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD48288236AF1-E50-DW1-A requirements.
6.How does Aetrix verify that UPD48288236AF1-E50-DW1-A is sourced from the original manufacturer or authorized distributors?
All UPD48288236AF1-E50-DW1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD48288236AF1-E50-DW1-A meets industry standards.
7.What is the process for return or replacement of UPD48288236AF1-E50-DW1-A?
All UPD48288236AF1-E50-DW1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD48288236AF1-E50-DW1-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPD48288236AF1-E50-DW1-A part is unused and in its original packaging.
Return procedure for UPD48288236AF1-E50-DW1-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
UPD48288236AF1-E50-DW1-A Tags
-
BQ2201SN-N
Texas Instruments
-
DS1314S+
Analog Devices Inc./Maxim Integrated
-
BQ2205LYPW
Texas Instruments
-
MXD1210CSA+
Analog Devices Inc./Maxim Integrated
-
MXD1210CPA+
Analog Devices Inc./Maxim Integrated
-
4RCD0232KC1ATG
Renesas
-
DS1312S-2+
Analog Devices Inc./Maxim Integrated
-
DS1314S-2+T&R
Analog Devices Inc./Maxim Integrated
-
DS1321S+
Analog Devices Inc./Maxim Integrated
-
DS1312S+
Analog Devices Inc./Maxim Integrated
-
MXD1210ESA+
Analog Devices Inc./Maxim Integrated
-
DS1321E+
Analog Devices Inc./Maxim Integrated
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