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Renesas UPD48288236AFF-E33-DW1
- Part No.:
- UPD48288236AFF-E33-DW1
- Manufacturer:
- Renesas
- Category:
- Controllers
- Package:
- -
- Datasheet:
-
UPD48288236AFF-E33-DW1.pdf
- Description:
- DDR DRAM, 8MX36
- Quantity:
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Inventory:144
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Product details
Overview
UPD48288236AFF-E33-DW1 from NEC Electronics (now Renesas) is a 288M-bit synchronous double-data-rate low-latency DRAM with x36 common I/O organization (8,388,608 words × 36 bits × 8 banks), HSTL I/O interface, and 144-pin TAPE FBGA package. It operates at 300 MHz (3.3 ns cycle time), supports differential CK/CK# and DK/DK# clocks, and delivers data valid via QVLD for high-speed memory subsystems in telecom baseband processing.
For engineers reviewing the UPD48288236AFF-E33-DW1 datasheet, UPD48288236AFF-E33-DW1 pinout, UPD48288236AFF-E33-DW1 application, or UPD48288236AFF-E33-DW1 equivalent, key selection criteria include its 300 MHz DDR timing, x36 non-multiplexed address architecture, programmable 25–60 Ω output impedance, JTAG boundary scan support, and 0–95°C case temperature operation.
Technical Context
This device implements a synchronous peripheral circuitry with burst counter and PLL-based clock generation, enabling precise edge-aligned data capture using dual differential input clocks (CK/CK# for commands, DK/DK# for write data) and dual differential output clocks (QK0/QK0#, QK1/QK1# for read data). Its SRAM-type interface eliminates address multiplexing overhead in x36 mode.
The memory core uses an 8-bank architecture with auto-refresh cycles (8192 cycles per bank / 32 ms), non-multiplexed row/column addressing (A0–A18), and bank address inputs (BA0–BA2). Data masking (DM) and data-valid signaling (QVLD) are fully supported, and on-die termination is configurable via ZQ pin.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density & Organization | 288 Mbit total; 8,388,608 words × 36 bits × 8 banks - enables wide-data-path buffering without external data-width expansion. |
| Operating Frequency | 300 MHz (tCK = 3.3 ns) - defines maximum command rate and sustained bandwidth of 2.16 GB/s (300 MHz × 36 bits × 2). |
| Interface Standard | HSTL Class I - ensures signal integrity at high speeds with controlled-impedance drivers and VREF-referenced inputs. |
| Supply Voltages | VEXT = 2.5 V ± 0.13 V; VDD = 1.8 V ± 0.1 V; VDDQ = 1.5 V or 1.8 V ± 0.1 V - separates core logic, I/O, and termination supplies for noise isolation. |
| Timing Parameter tRC | 20 ns - minimum row cycle time governing minimum interval between successive row activations in same bank. |
| Operating Temperature | Tc = 0 to 95°C - validated for industrial-grade embedded systems requiring thermal robustness without derating. |
| Burst Length | Programmable 2/4/8 - allows optimization of burst efficiency vs. latency trade-off in streaming or random-access workloads. |
Pinout & Package
144-pin TAPE FBGA (18.5 mm × 11 mm), lead-free, with 0.8 mm ball pitch. Package supports standard reflow profiles and provides isolated VSSQ/VDDQ planes for DQ noise immunity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK, CK# | Differential system clock input | Latches all address/control inputs on rising edge of CK; requires matched trace lengths and 100 Ω differential termination. |
| DK0, DK0#, DK1, DK1# | Differential input data clocks | DK0/DK0# clocks DQ0–DQ17; DK1/DK1# clocks DQ18–DQ35 - enables independent skew control per 18-bit data group. |
| QK0, QK0#, QK1, QK1# | Differential output data clocks | QK0/QK0# aligned with DQ0–DQ17; QK1/QK1# aligned with DQ18–DQ35 - provides source-synchronous timing for each half of x36 bus. |
| DQ0–DQ35 | 36-bit bidirectional data bus | Common I/O pins supporting both read and write; referenced to respective DKx/QKx pairs - eliminates need for separate read/write strobes. |
| QVLD | Data valid indicator | Asserted edge-aligned with QKx edges to signal when DQ outputs contain valid data - simplifies receiver sampling logic. |
| ZQ | Output impedance calibration | Connects to external resistor to VSS (25 Ω) or VDDQ (60 Ω) to set DQ driver strength - enables dynamic bus impedance matching. |
| A0–A18 | Non-multiplexed address inputs | Directly encode row/column/bank addresses; A19–A22 reserved - reduces controller complexity vs. multiplexed DRAMs. |
| BA0–BA2 | Bank address inputs | Select one of eight internal banks for concurrent access - enables interleaved operations to hide tRC latency. |
Key Features
| Feature | Design Value |
|---|---|
| SRAM-type interface with non-multiplexed addresses | Eliminates row/column address multiplexing overhead and associated controller state machine complexity in x36 mode. |
| Dual differential data clock domains (DK0/DK1 + QK0/QK1) | Enables independent timing closure for two 18-bit sub-buses, improving signal integrity and easing PCB layout in wide-data applications. |
| User-programmable output impedance (25–60 Ω) | Allows dynamic adjustment of DQ drive strength to match varying board trace impedances without hardware changes. |
| JTAG boundary scan (IEEE 1149.1) | Supports automated test and interconnect verification during manufacturing and field diagnostics without dedicated test pads. |
| Programmable burst length (2/4/8) | Permits tuning of memory throughput vs. command overhead - e.g., BL=2 for low-latency control data, BL=8 for bulk packet buffering. |
Applications
| Baseband Signal Processing | High-Speed Packet Buffering |
|---|---|
Use Scenario: Real-time FFT and channel estimation in LTE/5G baseband units requiring deterministic low-latency memory access. IC Role / Device Role / Timing Role: Primary working memory for DSP cores, interfaced via x36 bus with QVLD-synchronized reads and DM-masked writes. Use Value: 300 MHz DDR timing and non-multiplexed addressing reduce average access latency by ~35% vs. comparable SDR SDRAM, accelerating pipeline throughput. | Use Scenario: Temporary storage of ingress/egress Ethernet or CPRI frames in network interface cards before protocol processing. IC Role / Device Role / Timing Role: High-bandwidth FIFO buffer with burst-length flexibility to accommodate variable frame sizes (64–1518 bytes). Use Value: 2.16 GB/s peak bandwidth (300 MHz × 36 bits × 2) sustains line-rate 10G Ethernet traffic with margin for header parsing and checksum offload. |
| Radar Digital Beamforming | Industrial Vision Frame Store |
Use Scenario: Storing phase-aligned ADC samples across multiple antenna channels for real-time beam synthesis in phased-array radar. IC Role / Device Role / Timing Role: Time-critical sample buffer synchronized to system clock (CK) and sampled using DK clocks for precise timing alignment. Use Value: Differential DK/QK clocks and QVLD enable sub-nanosecond timing correlation between sample capture and processing stages. | Use Scenario: Full-frame buffering for high-resolution (4K+) machine vision sensors operating at >60 fps in factory automation cameras. IC Role / Device Role / Timing Role: Frame memory accessed via burst reads/writes with DM masking to handle partial-line updates during ROI processing. Use Value: Programmable 25–60 Ω output impedance maintains signal fidelity across long flex-cable interconnects to image sensor modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-latency DDR DRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS42S32800F-3BL | 32M × 32 SDR SDRAM, 166 MHz, single-ended SSTL, no QVLD or dual DK/QK clocks | Lacks source-synchronous timing and data-valid signaling - requires more complex controller handshake logic | Choose only if legacy controller lacks DDR timing capability and bandwidth demand ≤ 1.06 GB/s. |
| MT47H64M4HQ-37E | 64M × 4 DDR2 SDRAM, 266 MHz, 1.8 V VDDQ, no programmable impedance or ZQ calibration | Lower density per package and fixed 4-bit bus width necessitates 9× chip count for x36 interface | Select when migrating to DDR2 ecosystem and multi-chip stacking is acceptable for cost or thermal reasons. |
Compared with IS42S32800F-3BL and MT47H64M4HQ-37E, UPD48288236AFF-E33-DW1 delivers higher bandwidth per pin, integrated timing signaling (QVLD, DK/QK), and on-die impedance tuning - reducing controller complexity and PCB routing burden in space-constrained high-performance systems.
Availability
UPD48288236AFF-E33-DW1 is available at Aetrix Electronics and suitable for telecom baseband processing, radar digital beamforming, high-speed packet buffering, and industrial vision frame store applications requiring stable component supply and long-term industrial temperature support.
Supply support for UPD48288236AFF-E33-DW1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation (formerly NEC Electronics) is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.
The μPD482882xxA family was designed as low-latency DDR DRAMs targeting high-throughput, deterministic-memory subsystems in baseband processors and real-time signal processing equipment where SRAM-like interface simplicity and DDR bandwidth are jointly required.
FAQ
What is the exact memory organization of UPD48288236AFF-E33-DW1?
UPD48288236AFF-E33-DW1 is organized as 8,388,608 words × 36 bits × 8 banks, totaling 288 Mbit. This x36 common I/O configuration uses non-multiplexed addresses A0–A18 and bank address inputs BA0–BA2. The part does not support multiplexed addressing in default operation, though that mode is documented as optional in the datasheet.
Does UPD48288236AFF-E33-DW1 support differential input data clocks?
Yes, UPD48288236AFF-E33-DW1 supports two independent differential input data clock pairs: DK0/DK0# for DQ0–DQ17 and DK1/DK1# for DQ18–DQ35. These are sampled on both edges to latch write data, and their phase relationship to CK is specified in the AC characteristics table (tCKDK = –0.45 to +0.5 ns).
What is the function of the QVLD pin on UPD48288236AFF-E33-DW1?
The QVLD pin on UPD48288236AFF-E33-DW1 is an output data-valid signal edge-aligned with QK0/QK0# and QK1/QK1#. It asserts synchronously with valid DQ output data, eliminating the need for fixed delay-based sampling windows and enabling robust receiver design in high-speed interfaces.
Can UPD48288236AFF-E33-DW1 operate with 1.5 V VDDQ?
Yes, UPD48288236AFF-E33-DW1 supports either 1.5 V ± 0.1 V or 1.8 V ± 0.1 V for VDDQ, as specified in the Recommended DC Operating Conditions. When using 1.5 V VDDQ, VREF must be set to 0.5 × VDDQ (0.75 V nominal), and VTT must track VREF within ±5%.
Is JTAG boundary scan supported on UPD48288236AFF-E33-DW1?
Yes, UPD48288236AFF-E33-DW1 implements IEEE 1149.1 JTAG boundary scan with dedicated TMS, TCK, TDI, and TDO pins. The function is enabled via Mode Register Set and supports full interconnect testing - pins may be left unconnected if JTAG is unused, except TCK which must be tied to VSS.
UPD48288236AFF-E33-DW1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Controller Type:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPD48288236AFF-E33-DW1 FAQ
1.How can I place an order for UPD48288236AFF-E33-DW1 through Aetrix?
Please submit a Request for Quotation (RFQ) for UPD48288236AFF-E33-DW1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPD48288236AFF-E33-DW1 reliable?
The price and inventory of UPD48288236AFF-E33-DW1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD48288236AFF-E33-DW1 is usually 5 days.
3.What payment methods are accepted for UPD48288236AFF-E33-DW1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD48288236AFF-E33-DW1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPD48288236AFF-E33-DW1?
UPD48288236AFF-E33-DW1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPD48288236AFF-E33-DW1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPD48288236AFF-E33-DW1?
For technical support, including UPD48288236AFF-E33-DW1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD48288236AFF-E33-DW1 requirements.
6.How does Aetrix verify that UPD48288236AFF-E33-DW1 is sourced from the original manufacturer or authorized distributors?
All UPD48288236AFF-E33-DW1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD48288236AFF-E33-DW1 meets industry standards.
7.What is the process for return or replacement of UPD48288236AFF-E33-DW1?
All UPD48288236AFF-E33-DW1 units undergo pre-shipment inspection (PSI). If there is an issue with UPD48288236AFF-E33-DW1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPD48288236AFF-E33-DW1 part is unused and in its original packaging.
Return procedure for UPD48288236AFF-E33-DW1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
UPD48288236AFF-E33-DW1 Tags
-
BQ2201SN-N
Texas Instruments
-
DS1314S+
Analog Devices Inc./Maxim Integrated
-
BQ2205LYPW
Texas Instruments
-
MXD1210CSA+
Analog Devices Inc./Maxim Integrated
-
MXD1210CPA+
Analog Devices Inc./Maxim Integrated
-
4RCD0232KC1ATG
Renesas
-
DS1312S-2+
Analog Devices Inc./Maxim Integrated
-
DS1314S-2+T&R
Analog Devices Inc./Maxim Integrated
-
DS1321S+
Analog Devices Inc./Maxim Integrated
-
DS1312S+
Analog Devices Inc./Maxim Integrated
-
MXD1210ESA+
Analog Devices Inc./Maxim Integrated
-
DS1321E+
Analog Devices Inc./Maxim Integrated
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