Renesas UPD48288236FF-E33-DW1-E2
- Part No.:
- UPD48288236FF-E33-DW1-E2
- Manufacturer:
- Renesas
- Category:
- Controllers
- Package:
- -
- Datasheet:
-
UPD48288236FF-E33-DW1-E2.pdf
- Description:
- DDR DRAM, 8MX36
- Quantity:
- Payment:

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Inventory:2,595
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Product details
Overview
UPD48288236FF-E33-DW1-E2 from NEC Electronics (now Renesas) is a 288M-bit synchronous double-data-rate low-latency DRAM with common I/O x36 organization (8,388,608 words × 36 bits), 8 banks, HSTL I/O interface, and 144-pin TAPE FBGA package. It operates at 300 MHz with 3.3 ns cycle time (tRC = 20 ns), supports differential CK/CK# and DK/DK# clocks, and delivers data validity via QVLD for high-speed memory subsystems in networking and test equipment.
For engineers reviewing the UPD48288236FF-E33-DW1-E2 datasheet, UPD48288236FF-E33-DW1-E2 pinout, UPD48288236FF-E33-DW1-E2 application, or UPD48288236FF-E33-DW1-E2 equivalent, key selection criteria include its x36 common-I/O configuration, 300 MHz DDR operation with 20 ns random cycle time, programmable output impedance (25–60 Ω), JTAG boundary scan support, and SRAM-type non-multiplexed address interface requiring precise timing alignment of QKx/QKx# output clocks to DQ groups.
Technical Context
This device implements a double-data-rate architecture with two independent input data clock pairs (DK0/DK0#, DK1/DK1#) aligned to separate DQ groups (DQ0–DQ17 and DQ18–DQ35), and two free-running output data clock pairs (QK0/QK0#, QK1/QK1#) edge-aligned with corresponding DQ outputs. Its PLL circuitry locks to the CK/CK# reference clock to generate internal timing, enabling stable 300 MHz operation with tCK = 3.3 ns.
The memory core uses an 8-bank architecture with auto-refresh capability (8192 cycles per bank / 32 ms), non-multiplexed address inputs (A0–A18), and bank address inputs (BA0–BA2). It supports programmable burst lengths (2/4/8), data mask (DM) for selective write masking, and user-configurable output impedance via ZQ pin calibration - all controlled through Mode Register Set (MRS) commands.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density & Organization | 288 M-bit total; 8,388,608 words × 36 bits across 8 banks - enables high-bandwidth parallel data paths without address multiplexing. |
| Operating Frequency | 300 MHz (tCK = 3.3 ns); supports full-speed DDR transfers with dual DK/DK# clock domains for x36 I/O grouping. |
| Random Cycle Time | tRC = 20 ns - defines minimum interval between successive row activations, critical for sustained bandwidth in burst-intensive workloads. |
| I/O Interface | HSTL Class I - ensures signal integrity at 300 MHz with VREF-referenced inputs and programmable 25–60 Ω output drive strength. |
| Power Supplies | VEXT = 2.5 V ± 0.13 V; VDD = 1.8 V ± 0.1 V; VDDQ = 1.5 V or 1.8 V ± 0.1 V - segregated supplies reduce noise coupling between core logic and I/O. |
| Operating Temperature | Tc = 0 to 95°C - qualified for industrial-grade embedded systems requiring thermal stability under continuous load. |
| Data Valid Signal | QVLD output - provides deterministic timing reference for latch synchronization of DQ outputs relative to QKx/QKx# edges. |
Pinout & Package
Package: 144-pin TAPE FBGA (18.5 mm × 11 mm), lead-free, with 0.8 mm ball pitch. Thermal and electrical isolation provided by dedicated VSSQ/VDDQ and VTT supply domains.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK, CK# | Differential input clock | Latches all address/control inputs on rising edge of CK; defines system timing reference for command registration. |
| DK0/DK0#, DK1/DK1# | Differential input data clocks | DK0/DK0# clocks DQ0–DQ17; DK1/DK1# clocks DQ18–DQ35 - enables independent timing control for x36 data groups. |
| QK0/QK0#, QK1/QK1# | Differential output data clocks | QK0/QK0# edge-aligned with DQ0–DQ17; QK1/QK1# edge-aligned with DQ18–DQ35 - provides source-synchronous read capture timing. |
| DQ0–DQ35 | Data I/O bus | 36-bit common I/O interface supporting bidirectional DDR transfers; grouped into two 18-bit lanes for clock domain separation. |
| DM | Data mask input | Samples on both edges of DKx to selectively inhibit WRITE data transfer per byte lane - essential for partial writes without read-modify-write. |
| ZQ | Impedance calibration | Connects to external resistor to VSS/VDDQ to set DQ output impedance between 25 Ω and 60 Ω - matches PCB trace impedance for signal integrity. |
| QVLD | Data valid indicator | Asserted synchronously with QKx edges to signal valid DQ output windows - eliminates setup/hold uncertainty in high-speed latch design. |
| CS#, WE#, REF# | Command control | Active-low chip select, write enable, and refresh command - define operation mode (READ/WRITE/AUTO REFRESH) on each CK edge. |
| A0–A18, BA0–BA2 | Address & bank select | Non-multiplexed row/column addressing (19-bit + 3-bit bank) - reduces controller complexity vs. multiplexed DRAM interfaces. |
Key Features
| Feature | Design Value |
|---|---|
| SRAM-type non-multiplexed interface | Eliminates address multiplexing overhead and simplifies controller logic - reduces latency and timing verification burden in FPGA-based memory subsystems. |
| Dual independent DDR clock domains (DK0/QK0 & DK1/QK1) | Enables concurrent 18-bit data transfers per domain - maintains full 36-bit bandwidth while easing PCB routing and timing closure. |
| User-programmable output impedance (25–60 Ω) | Allows dynamic matching to varying PCB trace impedances without external termination resistors - improves signal fidelity across board variants. |
| JTAG boundary scan (IEEE 1149.1) | Supports in-circuit test and interconnect validation - critical for high-reliability industrial and telecom applications with dense BGA layouts. |
| Programmable burst length (2/4/8) | Optimizes data throughput vs. latency trade-off - short bursts minimize access latency; longer bursts maximize sequential bandwidth efficiency. |
Applications
| High-Speed Test Equipment Memory Buffer | Telecom Line Card Packet Buffer |
|---|---|
Use Scenario: Captures and buffers high-speed serial data streams from multi-channel oscilloscopes or bit-error-rate testers at >2 Gbps aggregate rates. IC Role / Device Role / Timing Role: Acts as a low-latency, wide-bus memory buffer with deterministic QVLD-stamped read data - enables precise timestamp alignment and real-time analysis. Use Value: The x36 common-I/O interface and 300 MHz DDR operation deliver 2.16 GB/s peak bandwidth, while QKx-aligned output clocks eliminate skew-induced sampling errors in FPGA capture logic. | Use Scenario: Stores packet headers and payload fragments in 10G/40G Ethernet line cards during traffic shaping and deep packet inspection. IC Role / Device Role / Timing Role: Serves as a high-density, low-power packet buffer with auto-refresh management - handles variable-length packet bursts with minimal latency penalty. Use Value: 8-bank architecture enables interleaved access across multiple packet flows, and programmable burst length (2/4/8) adapts to header-only vs. full-payload buffering requirements. |
| Industrial PLC Real-Time Data Log | FPGA-Based Video Frame Store |
Use Scenario: Logs sensor telemetry and control state transitions in deterministic industrial automation systems requiring guaranteed write persistence over 10+ years. IC Role / Device Role / Timing Role: Provides non-volatile-adjacent logging memory with robust refresh management and temperature-rated operation up to 95°C case temperature. Use Value: Auto-refresh command (AREF) guarantees data retention without host intervention, and VDDQ = 1.5 V option reduces power consumption in thermally constrained enclosures. | Use Scenario: Stores uncompressed HD/4K video frames in broadcast-grade FPGA video processors where pixel-accurate timing and zero-frame-drop reliability are mandatory. IC Role / Device Role / Timing Role: Functions as a frame-locked, source-synchronous memory store synchronized to pixel clock domains via QKx/QKx# outputs. Use Value: Dual QKx clock pairs allow independent timing alignment to separate RGB/YUV data lanes, and HSTL I/O ensures clean signal edges at 300 MHz pixel rates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-latency DDR DRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS42S32800J-6BLI | 32M × 32-bit SDRAM (1 G-bit), 166 MHz max, LVTTL I/O, no QVLD or dual DK/QK domains | Lacks source-synchronous output clocks and programmable impedance; requires multiplexed addressing | Select when cost-sensitive designs tolerate higher latency and lower bandwidth, and controller lacks QVLD-aware logic. |
| MT47H64M4BP-3:G | 64M × 4-bit DDR2 SDRAM (256 M-bit), 333 MHz, SSTL-18 I/O, no ZQ calibration or JTAG | Higher density per chip but narrower bus; no output impedance tuning or boundary scan | Choose for legacy DDR2-compatible platforms needing moderate bandwidth and simpler power delivery (single VDD). |
Compared with IS42S32800J-6BLI and MT47H64M4BP-3:G, UPD48288236FF-E33-DW1-E2 delivers superior timing determinism via QVLD and dual QKx domains, wider x36 bus for reduced controller pin count, and on-die impedance tuning - making it optimal for new high-speed embedded memory subsystems where signal integrity and latency predictability are critical.
Availability
UPD48288236FF-E33-DW1-E2 is available at Aetrix Electronics and suitable for high-speed test equipment, telecom line card buffers, industrial PLC data loggers, and FPGA-based video frame stores requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature operation.
Supply support for UPD48288236FF-E33-DW1-E2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation (formerly NEC Electronics) is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The μPD48288xxx family was designed as low-latency, wide-bus DDR DRAMs targeting high-performance embedded systems requiring SRAM-like interface simplicity, deterministic timing, and industrial-grade reliability - particularly in test instrumentation and communications infrastructure.
FAQ
What is the exact memory organization of UPD48288236FF-E33-DW1-E2?
UPD48288236FF-E33-DW1-E2 is organized as 8,388,608 words × 36 bits across 8 independent banks. This yields a total density of 288 M-bit (36 M-byte) with non-multiplexed address inputs A0–A18 and bank address inputs BA0–BA2. The x36 common I/O configuration allows full 36-bit parallel transfers without address multiplexing overhead.
Does UPD48288236FF-E33-DW1-E2 support differential input data clocks?
Yes, UPD48288236FF-E33-DW1-E2 supports two independent differential input data clock pairs: DK0/DK0# for DQ0–DQ17 and DK1/DK1# for DQ18–DQ35. This dual-clock-domain architecture enables precise timing alignment within each 18-bit data group and is explicitly defined in the datasheet's Pin Description and AC Characteristics tables for the x36 configuration.
What is the function of the QVLD signal on UPD48288236FF-E33-DW1-E2?
The QVLD (Data Valid) signal on UPD48288236FF-E33-DW1-E2 is an output that indicates when DQ data is valid relative to the QKx/QKx# output clocks. It is edge-aligned with QKx and QKx# and provides deterministic timing for latch synchronization - eliminating setup/hold uncertainty in high-speed FPGA or ASIC capture logic. This feature is confirmed in the Pin Description section (Page 6) and AC Characteristics table (Page 15).
Can UPD48288236FF-E33-DW1-E2 operate with VDDQ = 1.5 V?
Yes, UPD48288236FF-E33-DW1-E2 supports VDDQ = 1.5 V ± 0.1 V as specified in the Recommended DC Operating Conditions (Page 10). This lower VDDQ option reduces I/O power consumption and is validated for use with HSTL Class I signaling, provided VDDQ does not exceed VDD (1.8 V ± 0.1 V) and VREF is maintained at 0.5 × VDDQ.
Is JTAG boundary scan supported on UPD48288236FF-E33-DW1-E2?
Yes, UPD48288236FF-E33-DW1-E2 includes IEEE 1149.1 JTAG boundary scan functionality using TMS, TDI, TCK, and TDO pins. The datasheet confirms JTAG support in the Pin Arrangement (Page 3–5) and Pin Description (Page 6–7) sections, specifying that these pins may be left unconnected if JTAG is unused - confirming functional implementation.
UPD48288236FF-E33-DW1-E2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Controller Type:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPD48288236FF-E33-DW1-E2 FAQ
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The price and inventory of UPD48288236FF-E33-DW1-E2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD48288236FF-E33-DW1-E2 is usually 5 days.
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6.How does Aetrix verify that UPD48288236FF-E33-DW1-E2 is sourced from the original manufacturer or authorized distributors?
All UPD48288236FF-E33-DW1-E2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD48288236FF-E33-DW1-E2 meets industry standards.
7.What is the process for return or replacement of UPD48288236FF-E33-DW1-E2?
All UPD48288236FF-E33-DW1-E2 units undergo pre-shipment inspection (PSI). If there is an issue with UPD48288236FF-E33-DW1-E2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPD48288236FF-E33-DW1-E2 part is unused and in its original packaging.
Return procedure for UPD48288236FF-E33-DW1-E2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
UPD48288236FF-E33-DW1-E2 Tags

-
BQ2201SN-N
Texas Instruments

-
DS1314S+
Analog Devices Inc./Maxim Integrated
-
BQ2205LYPW
Texas Instruments
-
MXD1210CSA+
Analog Devices Inc./Maxim Integrated

-
MXD1210CPA+
Analog Devices Inc./Maxim Integrated

-
4RCD0232KC1ATG
Renesas
-
DS1312S-2+
Analog Devices Inc./Maxim Integrated
-
DS1314S-2+T&R
Analog Devices Inc./Maxim Integrated

-
DS1321S+
Analog Devices Inc./Maxim Integrated

-
DS1312S+
Analog Devices Inc./Maxim Integrated
-
MXD1210ESA+
Analog Devices Inc./Maxim Integrated

-
DS1321E+
Analog Devices Inc./Maxim Integrated
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