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Renesas UPD48576209FF-E33-DW1-A

Part No.:
UPD48576209FF-E33-DW1-A
Manufacturer:
Renesas
Category:
Controllers
Package:
-
Datasheet:
AetrixUPD48576209FF-E33-DW1-A.pdf
Description:
DDR DRAM, 64MX9, 0.35NS
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Inventory:168

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Product details

Overview

UPD48576209FF-E33-DW1-A from NEC Electronics (now Renesas) is a 576M-bit synchronous double-data-rate low-latency DRAM with 64M-word × 9-bit organization, 8 banks, HSTL I/O interface, and 300 MHz operation (3.3 ns cycle time). It delivers high-density, low-voltage memory for real-time video buffering in broadcast infrastructure equipment.

For engineers reviewing the UPD48576209FF-E33-DW1-A datasheet, UPD48576209FF-E33-DW1-A pinout, UPD48576209FF-E33-DW1-A application, or UPD48576209FF-E33-DW1-A equivalent, key selection factors include its 144-pin TAPE FBGA package, differential CK/DK clocks, QVLD data-valid signaling, programmable output impedance (25–60 Ω), and non-multiplexed address architecture supporting deterministic timing in latency-critical systems.

Technical Context

This device implements a double-data-rate architecture synchronized to differential input clocks (CK/CK# and DK/DK#), with on-die PLL for clock multiplication and jitter tolerance. It uses SRAM-type command decoding with non-multiplexed addresses (A0–A21), bank addressing (BA0–BA2), and burst-length programming (2/4/8).

It supports auto-refresh at 128K cycles per 32 ms across all banks, operates with three independent supply domains (2.5 V VEXT, 1.8 V VDD, 1.5/1.8 V VDDQ), and integrates JTAG boundary scan (IEEE 1149.1) and ZQ-based output impedance calibration for signal integrity in high-speed parallel bus designs.

Key Specifications

ParameterValue and Actual Design Meaning
Density & Organization576 Mbit total; 64M words × 9 bits × 8 banks - enables compact, wide-data-width memory subsystems without external data widening logic
Clock Frequency300 MHz (tCK = 3.3 ns) - supports sustained 600 MT/s data transfer rate with deterministic timing margins
Interface StandardHSTL Class I I/O - ensures compatibility with high-speed ASIC/FPGA memory controllers using 1.5 V or 1.8 V VDDQ supplies
Supply VoltagesVEXT = 2.5 V ± 0.13 V, VDD = 1.8 V ± 0.1 V, VDDQ = 1.5 V ± 0.1 V - decoupled power domains reduce noise coupling between core logic and I/O drivers
Refresh RequirementAuto-refresh: 128K cycles / 32 ms total - meets JEDEC-compliant refresh scheduling for industrial-temperature operation (0–95°C case)
Package144-pin TAPE FBGA (18.5 mm × 11 mm) - lead-free, fine-pitch ball grid array optimized for high-density PCB routing and thermal dissipation
Data Valid SignalingQVLD output - provides edge-aligned strobe indicating valid DQ output data, eliminating need for external delay-matching circuits

Pinout & Package

144-pin TAPE FBGA (18.5 mm × 11 mm), lead-free, top-view ball layout with HSTL-compatible I/O voltage levels and dedicated VSSQ/VDDQ planes for DQ noise isolation.

Pin/TerminalCircuit RoleDesign Meaning
CK, CK#Differential system clock inputsLatch all address/control on rising edge of CK; enable precise timing control and reduced clock skew in high-speed synchronous systems
DK, DK#Differential input data clockReference WRITE data and DM on both edges; eliminates setup/hold uncertainty versus single-ended clocking
QK0, QK0#Differential output data clockEdge-aligned with DQ0–DQ8 outputs; provides receiver-synchronous sampling without phase-locked recovery circuitry
QVLDData valid indicatorAsserted coincident with valid DQ output; enables immediate data capture without fixed latency assumptions
DMData mask inputPer-byte masking of WRITE data on both DK edges; supports partial writes without read-modify-write overhead
ZQImpedance calibration referenceConnects to external resistor to set DQ output impedance (25–60 Ω); matches trace impedance for minimized reflections
VREFHSTL input referenceNominally VDDQ/2; stabilizes input threshold against supply noise, critical for reliable command/address sampling
A0–A21, BA0–BA2Non-multiplexed address & bank selectEliminates address multiplexing overhead; enables full row/column/bank specification every cycle for predictable access latency

Key Features

FeatureDesign Value
SRAM-type interfaceNon-multiplexed address bus and explicit command encoding (CS#, WE#, REF#) simplify controller logic and eliminate row/column activation sequencing complexity
Programmable burst length2/4/8-word bursts configurable via mode register - balances bandwidth efficiency and command overhead for varying data block sizes
User-programmable output impedance25–60 Ω range calibrated via ZQ pin - dynamically matches PCB trace impedance without requiring external termination resistors
Differential input/output clocksCK/CK#, DK/DK#, QK0/QK0# pairs - reject common-mode noise and enable >300 MHz operation with sub-nanosecond timing margins
JTAG boundary scanIEEE 1149.1 compliant (TMS/TCK/TDI/TDO) - enables in-system testability and interconnect verification without physical probe access

Applications

Video Processing EngineBroadcast Signal Router

Use Scenario: Real-time frame buffering and pixel reordering in HD/4K video processing ASICs.

IC Role / Device Role / Timing Role: Low-latency frame store with deterministic tRC = 20 ns and QVLD-synchronized readout.

Use Value: Eliminates pipeline stalls during format conversion by guaranteeing sub-20 ns random-access latency and burst-coherent data delivery.

Use Scenario: Synchronizing and switching uncompressed SDI/ASI streams in broadcast routing matrices.

IC Role / Device Role / Timing Role: Dual-port buffer managing write-in/read-out skew between asynchronous input and output clocks.

Use Value: Enables glitch-free switching via precise QK0/QK0# edge alignment and jitter-tolerant PLL locking to variable-rate reference clocks.

Military Radar DisplayIndustrial Vision Controller

Use Scenario: Storing and rendering real-time synthetic aperture radar (SAR) point-cloud data.

IC Role / Device Role / Timing Role: High-reliability memory subsystem operating continuously at 95°C case temperature.

Use Value: Maintains data integrity under thermal stress via 1.5 V VDDQ supply and VSSQ-isolated DQ ground plane, reducing bit-error rates in mission-critical displays.

Use Scenario: Buffering high-speed line-scan image data from multi-camera inspection systems.

IC Role / Device Role / Timing Role: Burst-mode memory interfacing with FPGA-based image preprocessor.

Use Value: Supports 300 MT/s sustained throughput using BL=8 bursts and HSTL I/O, enabling real-time defect detection without frame dropping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-latency DRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS42S16400F-6BLI16M × 16-bit, 166 MHz, 3.3 V LVTTL interface, no QVLD or ZQ calibrationLower density, slower speed, TTL-level signaling - suitable only for legacy industrial controllers with limited timing marginSelect only if existing design uses 3.3 V logic and cannot accommodate HSTL voltage levels or differential clocks
MT47H64M8CB-3:G64M × 8-bit, 333 MHz, SSTL-18 interface, on-die termination, no QVLDHigher speed but lacks QVLD strobe and ZQ calibration - requires external timing compensation and termination networksPrefer when DDR2 compatibility and higher bandwidth are prioritized over deterministic latency and simplified layout

Compared with IS42S16400F-6BLI and MT47H64M8CB-3:G, UPD48576209FF-E33-DW1-A uniquely combines QVLD-synchronized output, ZQ-calibrated impedance, and non-multiplexed addressing to minimize controller logic, reduce PCB layer count, and guarantee worst-case latency in real-time imaging systems.

Availability

UPD48576209FF-E33-DW1-A is available at Aetrix Electronics and suitable for broadcast infrastructure, military display systems, industrial vision inspection, and real-time video processing requiring stable component supply and long-term lifecycle support.

Supply support for UPD48576209FF-E33-DW1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly NEC Electronics) is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The μPD48576209 family was designed specifically for low-latency, high-reliability memory applications in broadcast, radar, and real-time imaging systems where deterministic timing, signal integrity, and extended temperature operation are critical.

FAQ

What is the maximum operating case temperature for UPD48576209FF-E33-DW1-A?

The UPD48576209FF-E33-DW1-A is rated for operation at a case temperature (Tc) of 0 to 95°C. This specification is validated under continuous operation with all recommended DC and AC conditions met, including VDD = 1.8 V ± 0.1 V, VDDQ = 1.5 V ± 0.1 V, and proper thermal management per the package's 144-pin TAPE FBGA footprint. The device maintains full functionality and timing compliance across this full industrial temperature range.

Does UPD48576209FF-E33-DW1-A support multiplexed addressing?

Yes, UPD48576209FF-E33-DW1-A supports both non-multiplexed and multiplexed address modes. In non-multiplexed mode (default), A0–A21 and BA0–BA2 are used directly for row/column/bank selection. Multiplexed mode is enabled via Mode Register Set (MRS) command and reduces pin count by sharing address lines with control functions - though it increases latency and is rarely used in latency-critical applications where UPD48576209FF-E33-DW1-A is typically deployed.

What is the purpose of the QVLD signal on UPD48576209FF-E33-DW1-A?

The QVLD (Data Valid) signal on UPD48576209FF-E33-DW1-A is an output that indicates when DQ0–DQ8 data is valid and stable relative to QK0/QK0#. It is edge-aligned with the output data clock and eliminates the need for fixed-latency assumptions or complex deskew circuits in the receiving logic. This feature is essential for achieving deterministic read timing in real-time video and radar processing systems using UPD48576209FF-E33-DW1-A.

Can UPD48576209FF-E33-DW1-A operate with a 1.8 V VDDQ supply?

Yes, UPD48576209FF-E33-DW1-A supports either 1.5 V ± 0.1 V or 1.8 V ± 0.1 V for VDDQ, as specified in the Recommended DC Operating Conditions. When using 1.8 V VDDQ, VDD must also be 1.8 V ± 0.1 V, and VREF must track at 0.5 × VDDQ. This dual-VDDQ capability allows system designers to optimize signal integrity and power consumption based on their PCB stackup and noise environment while maintaining full compatibility with the UPD48576209FF-E33-DW1-A's HSTL I/O interface.

How is output impedance calibrated on UPD48576209FF-E33-DW1-A?

Output impedance on UPD48576209FF-E33-DW1-A is calibrated using the ZQ pin, which connects to an external precision resistor (RQ) tied to VSS. The device measures RQ and sets DQ output driver impedance to 0.2 × RQ, yielding a programmable range of 25–60 Ω. This calibration is initiated via Mode Register Set command and eliminates the need for discrete series termination resistors, simplifying layout and improving signal fidelity on high-speed parallel buses interfaced to UPD48576209FF-E33-DW1-A.

UPD48576209FF-E33-DW1-A Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Controller Type:
-
Voltage - Supply:
-
Operating Temperature:
-
Mounting Type:
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UPD48576209FF-E33-DW1-A FAQ

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The price and inventory of UPD48576209FF-E33-DW1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD48576209FF-E33-DW1-A is usually 5 days.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD48576209FF-E33-DW1-A?

For technical support, including UPD48576209FF-E33-DW1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD48576209FF-E33-DW1-A requirements.

6.How does Aetrix verify that UPD48576209FF-E33-DW1-A is sourced from the original manufacturer or authorized distributors?

All UPD48576209FF-E33-DW1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD48576209FF-E33-DW1-A meets industry standards.

7.What is the process for return or replacement of UPD48576209FF-E33-DW1-A?

All UPD48576209FF-E33-DW1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD48576209FF-E33-DW1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD48576209FF-E33-DW1-A part is unused and in its original packaging.

Return procedure for UPD48576209FF-E33-DW1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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