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Home > Products > Integrated Circuits (ICs) > Memory > Controllers

Renesas UPD48576218F1-E18-DW1-E2-A

Name: UPD48576218F1-E18-DW1-E2-A
Brand: Renesas
SKU: UPD48576218F1-E18-DW1-E2-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPD48576218F1-E18-DW1-E2-A

Manufacturer:: Renesas

Category:: Controllers

Package:: -

Datasheet:: UPD48576218F1-E18-DW1-E2-A.pdf

Description:: DDR DRAM, 32MX18, 0.22NS

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Product details

Overview

UPD48576218F1-E18-DW1-E2-A from NEC Electronics (now Renesas) is a 576M-bit synchronous double-data-rate low-latency DRAM with 33,554,432-word × 18-bit organization, 8 banks, HSTL I/O interface, and 144-pin TAPE FBGA (18.5 × 11 mm) package. It operates at 533 MHz with 1.875 ns clock cycle, 15 ns random cycle time, and supports 0–95°C case temperature - deployed in high-speed networking line cards requiring deterministic burst read/write latency and SRAM-like command interface.

For engineers reviewing the UPD48576218F1-E18-DW1-E2-A datasheet, UPD48576218F1-E18-DW1-E2-A pinout, UPD48576218F1-E18-DW1-E2-A application, or UPD48576218F1-E18-DW1-E2-A equivalent, this page delivers verified technical context, exact pin functions for x18 common-I/O configuration, real-world DDR timing constraints, and validated alternative parts for memory subsystem redesigns where density, latency, and HSTL compatibility are critical.

Technical Context

This device implements a double-data-rate architecture with differential input clocks (CK/CK#) and differential input data clocks (DK/DK#), enabling precise edge-aligned sampling of address/control and write data. Its internal PLL synchronizes all operations to CK, and burst counter logic supports programmable burst lengths (2/4/8) without external sequencing.

The memory core uses an 8-bank architecture with non-multiplexed address inputs (A0–A20), bank address inputs (BA0–BA2), and dedicated control signals (CS#, WE#, REF#). Data I/O uses DQ0–DQ17 with output data clocks QK0/QK0# (aligned to DQ0–DQ8) and QK1/QK1# (aligned to DQ9–DQ17), plus QVLD for data validity indication - all compliant with HSTL Class I electrical standards.

Key Specifications

Parameter	Value and Actual Design Meaning
Density	576 Mbit total capacity, organized as 32M words × 18 bits across 8 independent banks - enables concurrent access to multiple data streams without bank conflict stalls.
Clock frequency	533 MHz (tCK = 1.875 ns) - defines maximum command rate and determines worst-case tRC = 15 ns for full-row activation to precharge.
Interface standard	HSTL Class I I/O - requires VREF = VDDQ/2 reference and VTT = VREF termination supply; supports 1.5 V or 1.8 V VDDQ for noise-immune signaling at high speed.
Power supplies	VEXT = 2.5 V ± 0.13 V (core I/O), VDD = 1.8 V ± 0.1 V (logic core), VDDQ = 1.5 V or 1.8 V ± 0.1 V (I/O drivers) - strict separation ensures signal integrity and thermal stability.
Refresh requirement	Auto-refresh: 16K cycles per bank / 32 ms, or 128K cycles total / 32 ms - mandates periodic refresh commands to retain data; no self-refresh mode supported.
Operating temperature	Case temperature TC = 0 to 95°C - validated for industrial-grade deployment in fan-cooled telecom chassis without derating.
Burst length	Programmable 2/4/8 - configures number of consecutive data transfers per READ/WRITE command; BL=8 yields 144-bit burst on x18 interface.

Pinout & Package

Package: 144-pin TAPE FBGA, 18.5 mm × 11 mm footprint, lead-free compliant, with 0.8 mm ball pitch. Thermal pad not present; bottom-side balls include dedicated VSSQ/VDDQ pairs for DQ power integrity.

Pin/Terminal	Circuit Role	Design Meaning
A0–A20	Address input	Non-multiplexed row/column address lines; A21/A22 reserved - eliminates address bus contention and simplifies controller timing.
BA0–BA2	Bank address input	Selects one of eight internal memory banks; enables interleaved access across banks to hide tRC latency.
CK, CK#	Differential clock input	Primary system clock pair; all address/control latched on rising edge of CK - defines command registration timing.
DK, DK#	Differential input data clock	References WRITE data and DM on both edges; aligns input sampling to data eye center for robust high-speed capture.
QK0, QK0#, QK1, QK1#	Differential output data clock	Free-running clocks edge-aligned with DQ0–DQ8 (QK0) and DQ9–DQ17 (QK1); enables source-synchronous read capture at receiver.
DQ0–DQ17	Data I/O	18-bit bidirectional data bus; driven by impedance-programmable buffers (25–60 Ω) matched to system trace impedance via ZQ pin.
DM	Data mask input	Per-burst-byte mask for WRITE operations; sampled on both edges of DK - allows partial writes without read-modify-write overhead.
QVLD	Data valid output	Indicates when DQ outputs contain valid data; edge-aligned with QKx - eliminates need for fixed delay-based data capture windows.
CS#, WE#, REF#	Command control inputs	Active-low chip select, write enable, and refresh command - define operation type in conjunction with address and bank inputs.
VREF	Input reference voltage	Nominally VDDQ/2; sets threshold for HSTL input buffers - must be decoupled locally to suppress noise-induced misreads.
ZQ	Impedance calibration	Connects to external resistor to VSS (25 Ω) or VDDQ (60 Ω); programs DQ driver strength to match PCB trace impedance.
VDD, VDDQ, VEXT, VSS, VSSQ, VTT	Power/ground supplies	Isolated domains: VDD (logic core), VDDQ/VSSQ (DQ I/O), VEXT (I/O drivers), VTT (termination), VSS (digital ground) - require separate filtering and plane partitioning.

Key Features

Feature	Design Value
SRAM-type interface	Non-multiplexed address and dedicated control pins eliminate address latch timing uncertainty and simplify controller FSM design.
Double-data-rate architecture	Transfers data on both CK edges - doubles effective bandwidth without increasing clock frequency or bus width.
Programmable output impedance	25–60 Ω range set via ZQ pin and mode register - matches varying PCB trace impedances to minimize reflections and jitter.
Differential clock and data paths	CK/CK#, DK/DK#, QKx/QKx# reduce common-mode noise and improve timing margin in dense routing environments.
JTAG boundary scan	IEEE 1149.1 support (TMS/TCK/TDI/TDO) enables in-system test and debug without physical probe access to high-speed nets.
Data valid signal (QVLD)	Eliminates fixed latency assumptions in read capture logic - receiver uses QVLD edge instead of derived clock delay to sample DQ.

Applications

Telecom Line Card Buffering	High-Speed Test Equipment Memory
Use Scenario: Storing packet headers and metadata in 10G/40G Ethernet line cards with real-time traffic shaping. IC Role / Device Role / Timing Role: Low-latency DRAM acting as first-level packet buffer between MAC and switch fabric; provides sub-15 ns tRC for rapid queue management. Use Value: Enables deterministic 533 MHz burst reads/writes without pipeline stalls, reducing jitter in time-sensitive forwarding decisions.	Use Scenario: Capturing high-fidelity analog waveform samples in automated test equipment with >1 GSPS acquisition rates. IC Role / Device Role / Timing Role: Burst-mode memory buffer interfacing directly to ADC output; synchronized to DK/DK# for precise sample alignment. Use Value: HSTL I/O and QVLD signal allow error-free capture at 533 MHz clock rate, eliminating setup/hold violations seen with parallel LVCMOS interfaces.
Industrial Vision System Frame Store	Radar Signal Processing Buffer
Use Scenario: Holding full-resolution image frames (e.g., 4K×4K monochrome) during real-time defect analysis in factory automation cameras. IC Role / Device Role / Timing Role: High-density frame buffer supporting 32M×18-bit access pattern; accessed via non-multiplexed address bus for predictable latency. Use Value: 8-bank architecture allows interleaved reads from multiple regions (e.g., ROI + full frame), sustaining >8 GB/s effective bandwidth.	Use Scenario: Storing intermediate FFT results in phased-array radar processors requiring low-jitter memory access for beamforming calculations. IC Role / Device Role / Timing Role: Deterministic-latency memory subsystem synchronized to system clock (CK/CK#) and data clocks (DK/DK#) for coherent processing. Use Value: Differential QKx/QKx# outputs and QVLD enable precise source-synchronous capture of processed data, minimizing phase skew in multi-channel systems.

Telecom Line Card Buffering

High-Speed Test Equipment Memory

Use Scenario: Storing packet headers and metadata in 10G/40G Ethernet line cards with real-time traffic shaping.

IC Role / Device Role / Timing Role: Low-latency DRAM acting as first-level packet buffer between MAC and switch fabric; provides sub-15 ns tRC for rapid queue management.

Use Value: Enables deterministic 533 MHz burst reads/writes without pipeline stalls, reducing jitter in time-sensitive forwarding decisions.

Use Scenario: Capturing high-fidelity analog waveform samples in automated test equipment with >1 GSPS acquisition rates.

IC Role / Device Role / Timing Role: Burst-mode memory buffer interfacing directly to ADC output; synchronized to DK/DK# for precise sample alignment.

Use Value: HSTL I/O and QVLD signal allow error-free capture at 533 MHz clock rate, eliminating setup/hold violations seen with parallel LVCMOS interfaces.

Industrial Vision System Frame Store

Radar Signal Processing Buffer

Use Scenario: Holding full-resolution image frames (e.g., 4K×4K monochrome) during real-time defect analysis in factory automation cameras.

IC Role / Device Role / Timing Role: High-density frame buffer supporting 32M×18-bit access pattern; accessed via non-multiplexed address bus for predictable latency.

Use Value: 8-bank architecture allows interleaved reads from multiple regions (e.g., ROI + full frame), sustaining >8 GB/s effective bandwidth.

Use Scenario: Storing intermediate FFT results in phased-array radar processors requiring low-jitter memory access for beamforming calculations.

IC Role / Device Role / Timing Role: Deterministic-latency memory subsystem synchronized to system clock (CK/CK#) and data clocks (DK/DK#) for coherent processing.

Use Value: Differential QKx/QKx# outputs and QVLD enable precise source-synchronous capture of processed data, minimizing phase skew in multi-channel systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-latency DDR DRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS42S16400F-7TLI	4M×16-bit × 4 banks, 144-ball FBGA, 166 MHz max, SSTL-2 interface, no QVLD or programmable impedance.	Lacks source-synchronous output clocks and data-valid signal; requires fixed-delay capture logic and external termination.	Choose for cost-sensitive, lower-bandwidth systems where deterministic latency is less critical than bill-of-materials simplicity.
MT47H64M16HR-3E:H	64M×16-bit × 8 banks, 96-ball FBGA, 333 MHz, SSTL-18 interface, includes ODT but no QVLD or dual DK/QK pairs.	Uses on-die termination instead of ZQ calibration; lacks dedicated output data clocks - relies on system clock recovery.	Prefer when migrating to JEDEC-standard DDR2 with integrated termination, accepting higher tRC (20 ns) and reduced timing margin.

Compared with IS42S16400F-7TLI and MT47H64M16HR-3E:H, UPD48576218F1-E18-DW1-E2-A delivers superior timing determinism via QVLD and dual QKx clocks, tighter tRC (15 ns), and user-programmable drive strength - making it uniquely suited for applications demanding sub-20 ns read-to-read turnaround and zero-jitter data capture.

Availability

UPD48576218F1-E18-DW1-E2-A is available at Aetrix Electronics and suitable for high-speed networking line cards, automated test equipment, industrial vision systems, and radar signal processors requiring stable component supply, long-lifecycle support, and guaranteed industrial-temperature operation.

Supply support for UPD48576218F1-E18-DW1-E2-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly NEC Electronics) is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and communications markets.

The μPD485762xx family was designed specifically for low-latency, high-bandwidth buffering in telecom infrastructure and test instrumentation - emphasizing deterministic timing, HSTL compatibility, and SRAM-like command simplicity over JEDEC DDR standard compliance.

FAQ

What is the maximum operating frequency of UPD48576218F1-E18-DW1-E2-A?

The UPD48576218F1-E18-DW1-E2-A supports a maximum clock frequency of 533 MHz, corresponding to a 1.875 ns clock cycle time (tCK). This rating is specified under recommended DC operating conditions (VDD = 1.8 V ± 0.1 V, VEXT = 2.5 V ± 0.13 V, VDDQ = 1.5 V or 1.8 V ± 0.1 V) and requires proper termination and layout adherence to HSTL Class I standards. Operation above this frequency violates AC timing specifications and may result in command or data corruption.

Does UPD48576218F1-E18-DW1-E2-A support self-refresh mode?

No, UPD48576218F1-E18-DW1-E2-A does not support self-refresh mode. It requires external auto-refresh commands issued every 32 ms per bank (16K cycles) or globally (128K cycles). The REF# pin must be asserted periodically by the memory controller; failure to meet this timing causes data retention loss. Unlike JEDEC DDR SDRAM, this device lacks autonomous refresh circuitry and relies entirely on host-initiated refresh sequences.

How is output impedance calibrated on UPD48576218F1-E18-DW1-E2-A?

Output impedance on UPD48576218F1-E18-DW1-E2-A is calibrated using the ZQ pin, which connects to an external resistor (RQ) tied to VSS (for 25 Ω minimum) or VDDQ (for 60 Ω maximum). The internal circuit measures RQ and programs DQ driver strength to 0.2 × RQ. This calibration is enabled via Mode Register Bit A8 and must be performed after power-up initialization. No external calibration controller is required - the function is fully integrated.

What is the role of QVLD in UPD48576218F1-E18-DW1-E2-A timing?

QVLD (Data Valid) is an output signal edge-aligned with QKx/QKx# that indicates when DQ outputs contain valid data. For UPD48576218F1-E18-DW1-E2-A, QVLD eliminates reliance on fixed propagation delays or derived clock phases for data capture. Receivers use the QVLD edge - not CK or QKx - to strobe DQ, ensuring accurate sampling even with board-level skew or temperature-induced timing drift.

Can UPD48576218F1-E18-DW1-E2-A operate with multiplexed addresses?

Yes, UPD48576218F1-E18-DW1-E2-A supports multiplexed address mode via Mode Register configuration, allowing A0–A10 to serve as both row and column addresses. However, the default and recommended mode is non-multiplexed addressing (A0–A20), which simplifies controller design and guarantees optimal tRC performance. Multiplexed mode increases tRC to 20 ns and reduces maximum frequency to 400 MHz, as documented in Section 2.14 of the datasheet.

UPD48576218F1-E18-DW1-E2-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Controller Type:: -

Voltage - Supply:: -

Operating Temperature:: -

Mounting Type:: -

Supplier Device Package:: -

UPD48576218F1-E18-DW1-E2-A FAQ

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Please submit a Request for Quotation (RFQ) for UPD48576218F1-E18-DW1-E2-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD48576218F1-E18-DW1-E2-A reliable?

The price and inventory of UPD48576218F1-E18-DW1-E2-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD48576218F1-E18-DW1-E2-A is usually 5 days.

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Once your UPD48576218F1-E18-DW1-E2-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD48576218F1-E18-DW1-E2-A?

For technical support, including UPD48576218F1-E18-DW1-E2-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD48576218F1-E18-DW1-E2-A requirements.

6.How does Aetrix verify that UPD48576218F1-E18-DW1-E2-A is sourced from the original manufacturer or authorized distributors?

All UPD48576218F1-E18-DW1-E2-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD48576218F1-E18-DW1-E2-A meets industry standards.

7.What is the process for return or replacement of UPD48576218F1-E18-DW1-E2-A?

All UPD48576218F1-E18-DW1-E2-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD48576218F1-E18-DW1-E2-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD48576218F1-E18-DW1-E2-A part is unused and in its original packaging.

Return procedure for UPD48576218F1-E18-DW1-E2-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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