Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas UPD48576218FF-E33-DW1-A

Part No.:
UPD48576218FF-E33-DW1-A
Manufacturer:
Renesas
Category:
Controllers
Package:
-
Datasheet:
AetrixUPD48576218FF-E33-DW1-A.pdf
Description:
DDR DRAM, 32MX18, 0.35NS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:215

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

UPD48576218FF-E33-DW1-A from NEC Electronics (now Renesas) is a 33,554,432-word × 18-bit synchronous double-data-rate low-latency DRAM with HSTL I/O, 3.3 ns cycle time at 300 MHz, 144-pin TAPE FBGA (18.5 × 11 mm), and dual differential clocks (CK/CK#, DK/DK#). It delivers 576 Mbit density across eight banks for high-throughput buffering in telecom baseband processing.

For engineers reviewing the UPD48576218FF-E33-DW1-A datasheet, UPD48576218FF-E33-DW1-A pinout, UPD48576218FF-E33-DW1-A application, or UPD48576218FF-E33-DW1-A equivalent, this page provides verified timing parameters, banked refresh behavior, SRAM-style non-multiplexed address interface, and HSTL-compatible signal integrity details essential for DDR memory subsystem design.

Technical Context

This device implements a synchronous peripheral circuit with integrated burst counter and PLL-based clock domain alignment. It supports non-multiplexed addressing with A0–A20 inputs and BA0–BA2 bank selects, enabling deterministic access latency independent of address multiplexing overhead.

Its dual differential clock architecture separates command/control (CK/CK#) from data (DK/DK#), while QK0/QK0# and QK1/QK1# provide edge-aligned output data clocks referenced to DQ0–DQ17. Programmable output impedance (25–60 Ω) and JTAG boundary scan support system-level validation and impedance matching.

Key Specifications

Parameter Value and Actual Design Meaning
Density 576 Mbit total, organized as 32M words × 18 bits × 8 banks - enables wide-data-width buffering without external data bus widening.
Cycle time / Frequency 3.3 ns @ 300 MHz - defines minimum clock period for reliable command registration and data transfer timing.
Random cycle time (tRC) 20 ns - determines minimum interval between successive row activations in same bank, critical for bandwidth planning.
Power supplies VEXT = 2.5 V ± 0.13 V, VDD = 1.8 V ± 0.1 V, VDDQ = 1.5 V or 1.8 V ± 0.1 V - separate core and I/O rails enable noise isolation and voltage scaling.
Operating temperature Tc = 0 to 95°C - validated for industrial-temperature operation in base station and networking equipment.
Interface standard HSTL Class I - ensures compatible signaling levels and termination requirements with FPGA and ASIC memory controllers.
Refresh requirement Auto-refresh: 128K cycles / 32 ms total - guarantees data retention without host intervention, supporting real-time systems.

Pinout & Package

Package: 144-pin TAPE FBGA, 18.5 mm × 11 mm, lead-free, with 0.8 mm ball pitch. Thermal and mechanical specifications comply with JEDEC MO-255.

Pin/Terminal Circuit Role Design Meaning
CK, CK# Differential input clock Registers all address and command inputs on rising edge of CK; CK# must be 180° out-of-phase for jitter tolerance.
DK, DK# Differential input data clock Samples WRITE data and DM on both edges; aligns input timing independently from command clock domain.
QK0, QK0#, QK1, QK1# Differential output data clocks Free-running, edge-aligned with DQ outputs; QK0/QK0# for DQ0–DQ8, QK1/QK1# for DQ9–DQ17 in x18 mode.
A0–A20, BA0–BA2 Non-multiplexed address & bank select Enables single-cycle address setup; eliminates multiplexing delay and simplifies controller logic vs. traditional SDRAM.
DQ0–DQ17 Data I/O (18-bit bus) Common I/O bidirectional bus; supports BL=2/4/8 bursts with data mask (DM) for partial writes.
CS#, WE#, REF#, DM Command control inputs Active-low chip select, write enable, refresh command, and data mask - define operation type on each CK edge.
VREF, VTT, ZQ Reference & termination VREF sets HSTL input threshold; VTT supplies termination; ZQ enables programmable output impedance (25–60 Ω).

Key Features

Feature Design Value
SRAM-type interface Non-multiplexed address and command inputs eliminate row/column address strobe sequencing, reducing controller complexity and latency variability.
Double-data-rate architecture Transfers data on both edges of DK/DK# and QK/QK#, doubling effective bandwidth without increasing clock frequency.
Programmable burst length Configurable BL=2/4/8 via mode register - allows optimization for sequential access patterns in packet buffering or video frame storage.
User-programmable output impedance 25–60 Ω range set via ZQ pin and mode register - enables precise DQ driver matching to PCB trace impedance without external resistors.
JTAG boundary scan IEEE 1149.1 compliant TMS/TCK/TDI/TDO pins - supports production test and interconnect verification without physical probe access.

Applications

Telecom Baseband Processing High-Speed Packet Buffering

Use Scenario: Real-time channelization and modulation/demodulation in 4G/LTE femtocells and small cells.

IC Role / Device Role / Timing Role: Low-latency frame buffer between DSP cores and RF front-end, synchronized to 300 MHz system clock.

Use Value: 3.3 ns tCK and non-multiplexed addressing ensure deterministic read/write response under burst traffic, minimizing pipeline stalls.

Use Scenario: Temporary storage of variable-length Ethernet/IP packets in Layer 3 switches.

IC Role / Device Role / Timing Role: High-bandwidth, multi-bank DRAM serving as shared packet memory for ingress/egress queues.

Use Value: Eight independent banks allow concurrent access to different packet buffers, sustaining >2.1 GB/s aggregate throughput at 300 MHz.

Industrial Video Frame Storage Radar Signal Processing

Use Scenario: Capturing and preprocessing uncompressed HD video streams in machine vision inspection systems.

IC Role / Device Role / Timing Role: Dual-port-capable frame buffer interfacing with image sensor and FPGA accelerator via HSTL I/O.

Use Value: HSTL compatibility and 18-bit bus width match common FPGA I/O standards, eliminating level-shifting components.

Use Scenario: Storing digitized IF samples and intermediate FFT results in phased-array radar receivers.

IC Role / Device Role / Timing Role: Low-jitter, deterministic-access memory for time-critical signal chain buffering with tight timing closure.

Use Value: Differential DK/DK# and QK/QK# clocks reduce sampling uncertainty, maintaining <±0.35 ns data valid window at 300 MHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-latency DRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS42S16160J-6BLI Single-ended SSTL-2 interface, 16-bit × 1M × 4 banks, 6 ns tCK @ 166 MHz - lower speed, no differential clocks or programmable impedance. Targeted at cost-sensitive embedded controllers; lacks QK/DK clocks and HSTL drive strength for high-noise environments. Select when system clock ≤ 166 MHz and board layout cannot support differential routing or HSTL termination.
MT47H64M16HR-37E:H DDR2 SDRAM, 64M × 16 × 4 banks, 2.7 ns tCK @ 375 MHz, SSTL-18 - higher density but requires multiplexed addressing and stricter timing closure. Designed for PC-class memory subsystems; lacks non-multiplexed interface and dedicated output clocks for deterministic latency. Choose only if existing DDR2 controller IP is available and system tolerates added address/command timing complexity.

Compared with IS42S16160J-6BLI and MT47H64M16HR-37E:H, UPD48576218FF-E33-DW1-A uniquely combines non-multiplexed addressing, differential data clocks, and programmable output impedance - delivering superior timing predictability and signal integrity in high-speed industrial and telecom memory interfaces.

Availability

UPD48576218FF-E33-DW1-A is available at Aetrix Electronics and suitable for telecom baseband processing, high-speed packet buffering, industrial video frame storage, and radar signal processing requiring stable component supply and long-term industrial temperature support.

Supply support for UPD48576218FF-E33-DW1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly NEC Electronics) designs high-performance memory and microcontroller solutions for automotive, industrial, and communications infrastructure.

The μPD485762xx family was engineered specifically for low-latency, high-bandwidth buffering in real-time signal processing systems where deterministic timing and HSTL compatibility are mandatory.

FAQ

What is the exact memory organization of UPD48576218FF-E33-DW1-A?

UPD48576218FF-E33-DW1-A is organized as 33,554,432 words × 18 bits × 8 banks, totaling 576 Mbit. This configuration provides an 18-bit data bus width with eight independently refreshable banks, enabling concurrent access and efficient bandwidth utilization in multi-threaded signal processing workloads.

Does UPD48576218FF-E33-DW1-A support both 1.5 V and 1.8 V VDDQ operation?

Yes, UPD48576218FF-E33-DW1-A supports VDDQ at either 1.5 V ± 0.1 V or 1.8 V ± 0.1 V, as specified in the Recommended DC Operating Conditions. The selection is determined by system-level power architecture and must be stable during initialization and operation to maintain HSTL I/O compliance.

How does the refresh mechanism work in UPD48576218FF-E33-DW1-A?

UPD48576218FF-E33-DW1-A implements auto-refresh with two modes: per-bank refresh (16K cycles / 32 ms per bank) and full-array refresh (128K cycles / 32 ms total). The REF# pin triggers refresh commands, and internal counters manage timing - no external row address required, ensuring data retention without host CPU intervention.

What is the function of the ZQ pin on UPD48576218FF-E33-DW1-A?

The ZQ pin on UPD48576218FF-E33-DW1-A enables user-programmable output impedance calibration. Connected to an external resistor to VSS, it sets DQ driver impedance between 25 Ω and 60 Ω. Activation requires setting Mode Register Bit A8, allowing dynamic impedance matching to PCB trace characteristics without discrete termination resistors.

Can UPD48576218FF-E33-DW1-A operate with multiplexed addressing?

No, UPD48576218FF-E33-DW1-A uses a non-multiplexed address interface with dedicated A0–A20 and BA0–BA2 inputs. While the datasheet mentions multiplexing as an option for other variants in the family, the UPD48576218FF-E33-DW1-A is explicitly specified for non-multiplexed operation - confirmed by pin assignment tables and command timing diagrams.

UPD48576218FF-E33-DW1-A Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Controller Type:
-
Voltage - Supply:
-
Operating Temperature:
-
Mounting Type:
-
Supplier Device Package:
-

UPD48576218FF-E33-DW1-A FAQ

1.How can I place an order for UPD48576218FF-E33-DW1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPD48576218FF-E33-DW1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPD48576218FF-E33-DW1-A reliable?

The price and inventory of UPD48576218FF-E33-DW1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD48576218FF-E33-DW1-A is usually 5 days.

3.What payment methods are accepted for UPD48576218FF-E33-DW1-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPD48576218FF-E33-DW1-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPD48576218FF-E33-DW1-A?

UPD48576218FF-E33-DW1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPD48576218FF-E33-DW1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPD48576218FF-E33-DW1-A?

For technical support, including UPD48576218FF-E33-DW1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD48576218FF-E33-DW1-A requirements.

6.How does Aetrix verify that UPD48576218FF-E33-DW1-A is sourced from the original manufacturer or authorized distributors?

All UPD48576218FF-E33-DW1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD48576218FF-E33-DW1-A meets industry standards.

7.What is the process for return or replacement of UPD48576218FF-E33-DW1-A?

All UPD48576218FF-E33-DW1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD48576218FF-E33-DW1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPD48576218FF-E33-DW1-A part is unused and in its original packaging.

Return procedure for UPD48576218FF-E33-DW1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

UPD48576218FF-E33-DW1-A Tags

  • UPD48576218FF-E33-DW1-A
  • UPD48576218FF-E33-DW1-A PDF
  • UPD48576218FF-E33-DW1-A Datasheet
  • UPD48576218FF-E33-DW1-A Specifications
  • UPD48576218FF-E33-DW1-A Images
  • Renesas
  • Renesas UPD48576218FF-E33-DW1-A
  • Buy UPD48576218FF-E33-DW1-A
  • UPD48576218FF-E33-DW1-A Price
  • UPD48576218FF-E33-DW1-A Distributor
  • UPD48576218FF-E33-DW1-A Supplier
  • UPD48576218FF-E33-DW1-A Wholesale
Related Products
BQ2201SN-N
BQ2201SN-N

Texas Instruments

DS1314S+
DS1314S+

Analog Devices Inc./Maxim Integrated

BQ2205LYPW
BQ2205LYPW

Texas Instruments

MXD1210CSA+
MXD1210CSA+

Analog Devices Inc./Maxim Integrated

MXD1210CPA+
MXD1210CPA+

Analog Devices Inc./Maxim Integrated

4RCD0232KC1ATG
4RCD0232KC1ATG

Renesas

DS1312S-2+
DS1312S-2+

Analog Devices Inc./Maxim Integrated

DS1314S-2+T&R
DS1314S-2+T&R

Analog Devices Inc./Maxim Integrated

DS1321S+
DS1321S+

Analog Devices Inc./Maxim Integrated

DS1312S+
DS1312S+

Analog Devices Inc./Maxim Integrated

MXD1210ESA+
MXD1210ESA+

Analog Devices Inc./Maxim Integrated

DS1321E+
DS1321E+

Analog Devices Inc./Maxim Integrated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER