Renesas UPD48576218FF-E33-DW1-A
- Part No.:
- UPD48576218FF-E33-DW1-A
- Manufacturer:
- Renesas
- Category:
- Controllers
- Package:
- -
- Datasheet:
-
UPD48576218FF-E33-DW1-A.pdf
- Description:
- DDR DRAM, 32MX18, 0.35NS
- Quantity:
- Payment:

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Inventory:215
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Product details
Overview
UPD48576218FF-E33-DW1-A from NEC Electronics (now Renesas) is a 33,554,432-word × 18-bit synchronous double-data-rate low-latency DRAM with HSTL I/O, 3.3 ns cycle time at 300 MHz, 144-pin TAPE FBGA (18.5 × 11 mm), and dual differential clocks (CK/CK#, DK/DK#). It delivers 576 Mbit density across eight banks for high-throughput buffering in telecom baseband processing.
For engineers reviewing the UPD48576218FF-E33-DW1-A datasheet, UPD48576218FF-E33-DW1-A pinout, UPD48576218FF-E33-DW1-A application, or UPD48576218FF-E33-DW1-A equivalent, this page provides verified timing parameters, banked refresh behavior, SRAM-style non-multiplexed address interface, and HSTL-compatible signal integrity details essential for DDR memory subsystem design.
Technical Context
This device implements a synchronous peripheral circuit with integrated burst counter and PLL-based clock domain alignment. It supports non-multiplexed addressing with A0–A20 inputs and BA0–BA2 bank selects, enabling deterministic access latency independent of address multiplexing overhead.
Its dual differential clock architecture separates command/control (CK/CK#) from data (DK/DK#), while QK0/QK0# and QK1/QK1# provide edge-aligned output data clocks referenced to DQ0–DQ17. Programmable output impedance (25–60 Ω) and JTAG boundary scan support system-level validation and impedance matching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 576 Mbit total, organized as 32M words × 18 bits × 8 banks - enables wide-data-width buffering without external data bus widening. |
| Cycle time / Frequency | 3.3 ns @ 300 MHz - defines minimum clock period for reliable command registration and data transfer timing. |
| Random cycle time (tRC) | 20 ns - determines minimum interval between successive row activations in same bank, critical for bandwidth planning. |
| Power supplies | VEXT = 2.5 V ± 0.13 V, VDD = 1.8 V ± 0.1 V, VDDQ = 1.5 V or 1.8 V ± 0.1 V - separate core and I/O rails enable noise isolation and voltage scaling. |
| Operating temperature | Tc = 0 to 95°C - validated for industrial-temperature operation in base station and networking equipment. |
| Interface standard | HSTL Class I - ensures compatible signaling levels and termination requirements with FPGA and ASIC memory controllers. |
| Refresh requirement | Auto-refresh: 128K cycles / 32 ms total - guarantees data retention without host intervention, supporting real-time systems. |
Pinout & Package
Package: 144-pin TAPE FBGA, 18.5 mm × 11 mm, lead-free, with 0.8 mm ball pitch. Thermal and mechanical specifications comply with JEDEC MO-255.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK, CK# | Differential input clock | Registers all address and command inputs on rising edge of CK; CK# must be 180° out-of-phase for jitter tolerance. |
| DK, DK# | Differential input data clock | Samples WRITE data and DM on both edges; aligns input timing independently from command clock domain. |
| QK0, QK0#, QK1, QK1# | Differential output data clocks | Free-running, edge-aligned with DQ outputs; QK0/QK0# for DQ0–DQ8, QK1/QK1# for DQ9–DQ17 in x18 mode. |
| A0–A20, BA0–BA2 | Non-multiplexed address & bank select | Enables single-cycle address setup; eliminates multiplexing delay and simplifies controller logic vs. traditional SDRAM. |
| DQ0–DQ17 | Data I/O (18-bit bus) | Common I/O bidirectional bus; supports BL=2/4/8 bursts with data mask (DM) for partial writes. |
| CS#, WE#, REF#, DM | Command control inputs | Active-low chip select, write enable, refresh command, and data mask - define operation type on each CK edge. |
| VREF, VTT, ZQ | Reference & termination | VREF sets HSTL input threshold; VTT supplies termination; ZQ enables programmable output impedance (25–60 Ω). |
Key Features
| Feature | Design Value |
|---|---|
| SRAM-type interface | Non-multiplexed address and command inputs eliminate row/column address strobe sequencing, reducing controller complexity and latency variability. |
| Double-data-rate architecture | Transfers data on both edges of DK/DK# and QK/QK#, doubling effective bandwidth without increasing clock frequency. |
| Programmable burst length | Configurable BL=2/4/8 via mode register - allows optimization for sequential access patterns in packet buffering or video frame storage. |
| User-programmable output impedance | 25–60 Ω range set via ZQ pin and mode register - enables precise DQ driver matching to PCB trace impedance without external resistors. |
| JTAG boundary scan | IEEE 1149.1 compliant TMS/TCK/TDI/TDO pins - supports production test and interconnect verification without physical probe access. |
Applications
| Telecom Baseband Processing | High-Speed Packet Buffering |
|---|---|
Use Scenario: Real-time channelization and modulation/demodulation in 4G/LTE femtocells and small cells. IC Role / Device Role / Timing Role: Low-latency frame buffer between DSP cores and RF front-end, synchronized to 300 MHz system clock. Use Value: 3.3 ns tCK and non-multiplexed addressing ensure deterministic read/write response under burst traffic, minimizing pipeline stalls. |
Use Scenario: Temporary storage of variable-length Ethernet/IP packets in Layer 3 switches. IC Role / Device Role / Timing Role: High-bandwidth, multi-bank DRAM serving as shared packet memory for ingress/egress queues. Use Value: Eight independent banks allow concurrent access to different packet buffers, sustaining >2.1 GB/s aggregate throughput at 300 MHz. |
| Industrial Video Frame Storage | Radar Signal Processing |
Use Scenario: Capturing and preprocessing uncompressed HD video streams in machine vision inspection systems. IC Role / Device Role / Timing Role: Dual-port-capable frame buffer interfacing with image sensor and FPGA accelerator via HSTL I/O. Use Value: HSTL compatibility and 18-bit bus width match common FPGA I/O standards, eliminating level-shifting components. |
Use Scenario: Storing digitized IF samples and intermediate FFT results in phased-array radar receivers. IC Role / Device Role / Timing Role: Low-jitter, deterministic-access memory for time-critical signal chain buffering with tight timing closure. Use Value: Differential DK/DK# and QK/QK# clocks reduce sampling uncertainty, maintaining <±0.35 ns data valid window at 300 MHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-latency DRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS42S16160J-6BLI | Single-ended SSTL-2 interface, 16-bit × 1M × 4 banks, 6 ns tCK @ 166 MHz - lower speed, no differential clocks or programmable impedance. | Targeted at cost-sensitive embedded controllers; lacks QK/DK clocks and HSTL drive strength for high-noise environments. | Select when system clock ≤ 166 MHz and board layout cannot support differential routing or HSTL termination. |
| MT47H64M16HR-37E:H | DDR2 SDRAM, 64M × 16 × 4 banks, 2.7 ns tCK @ 375 MHz, SSTL-18 - higher density but requires multiplexed addressing and stricter timing closure. | Designed for PC-class memory subsystems; lacks non-multiplexed interface and dedicated output clocks for deterministic latency. | Choose only if existing DDR2 controller IP is available and system tolerates added address/command timing complexity. |
Compared with IS42S16160J-6BLI and MT47H64M16HR-37E:H, UPD48576218FF-E33-DW1-A uniquely combines non-multiplexed addressing, differential data clocks, and programmable output impedance - delivering superior timing predictability and signal integrity in high-speed industrial and telecom memory interfaces.
Availability
UPD48576218FF-E33-DW1-A is available at Aetrix Electronics and suitable for telecom baseband processing, high-speed packet buffering, industrial video frame storage, and radar signal processing requiring stable component supply and long-term industrial temperature support.
Supply support for UPD48576218FF-E33-DW1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly NEC Electronics) designs high-performance memory and microcontroller solutions for automotive, industrial, and communications infrastructure.
The μPD485762xx family was engineered specifically for low-latency, high-bandwidth buffering in real-time signal processing systems where deterministic timing and HSTL compatibility are mandatory.
FAQ
What is the exact memory organization of UPD48576218FF-E33-DW1-A?
UPD48576218FF-E33-DW1-A is organized as 33,554,432 words × 18 bits × 8 banks, totaling 576 Mbit. This configuration provides an 18-bit data bus width with eight independently refreshable banks, enabling concurrent access and efficient bandwidth utilization in multi-threaded signal processing workloads.
Does UPD48576218FF-E33-DW1-A support both 1.5 V and 1.8 V VDDQ operation?
Yes, UPD48576218FF-E33-DW1-A supports VDDQ at either 1.5 V ± 0.1 V or 1.8 V ± 0.1 V, as specified in the Recommended DC Operating Conditions. The selection is determined by system-level power architecture and must be stable during initialization and operation to maintain HSTL I/O compliance.
How does the refresh mechanism work in UPD48576218FF-E33-DW1-A?
UPD48576218FF-E33-DW1-A implements auto-refresh with two modes: per-bank refresh (16K cycles / 32 ms per bank) and full-array refresh (128K cycles / 32 ms total). The REF# pin triggers refresh commands, and internal counters manage timing - no external row address required, ensuring data retention without host CPU intervention.
What is the function of the ZQ pin on UPD48576218FF-E33-DW1-A?
The ZQ pin on UPD48576218FF-E33-DW1-A enables user-programmable output impedance calibration. Connected to an external resistor to VSS, it sets DQ driver impedance between 25 Ω and 60 Ω. Activation requires setting Mode Register Bit A8, allowing dynamic impedance matching to PCB trace characteristics without discrete termination resistors.
Can UPD48576218FF-E33-DW1-A operate with multiplexed addressing?
No, UPD48576218FF-E33-DW1-A uses a non-multiplexed address interface with dedicated A0–A20 and BA0–BA2 inputs. While the datasheet mentions multiplexing as an option for other variants in the family, the UPD48576218FF-E33-DW1-A is explicitly specified for non-multiplexed operation - confirmed by pin assignment tables and command timing diagrams.
UPD48576218FF-E33-DW1-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Controller Type:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPD48576218FF-E33-DW1-A FAQ
1.How can I place an order for UPD48576218FF-E33-DW1-A through Aetrix?
Please submit a Request for Quotation (RFQ) for UPD48576218FF-E33-DW1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of UPD48576218FF-E33-DW1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPD48576218FF-E33-DW1-A is usually 5 days.
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5.How can I obtain technical support or documentation for UPD48576218FF-E33-DW1-A?
For technical support, including UPD48576218FF-E33-DW1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPD48576218FF-E33-DW1-A requirements.
6.How does Aetrix verify that UPD48576218FF-E33-DW1-A is sourced from the original manufacturer or authorized distributors?
All UPD48576218FF-E33-DW1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPD48576218FF-E33-DW1-A meets industry standards.
7.What is the process for return or replacement of UPD48576218FF-E33-DW1-A?
All UPD48576218FF-E33-DW1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPD48576218FF-E33-DW1-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPD48576218FF-E33-DW1-A part is unused and in its original packaging.
Return procedure for UPD48576218FF-E33-DW1-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
UPD48576218FF-E33-DW1-A Tags

-
BQ2201SN-N
Texas Instruments

-
DS1314S+
Analog Devices Inc./Maxim Integrated
-
BQ2205LYPW
Texas Instruments
-
MXD1210CSA+
Analog Devices Inc./Maxim Integrated

-
MXD1210CPA+
Analog Devices Inc./Maxim Integrated

-
4RCD0232KC1ATG
Renesas
-
DS1312S-2+
Analog Devices Inc./Maxim Integrated
-
DS1314S-2+T&R
Analog Devices Inc./Maxim Integrated

-
DS1321S+
Analog Devices Inc./Maxim Integrated

-
DS1312S+
Analog Devices Inc./Maxim Integrated
-
MXD1210ESA+
Analog Devices Inc./Maxim Integrated

-
DS1321E+
Analog Devices Inc./Maxim Integrated
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