Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division V10KM120DU-M3/I

Part No.:
V10KM120DU-M3/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
Diode Arrays
Package:
8-PowerTDFN
Datasheet:
AetrixV10KM120DU-M3/I.pdf
Description:
DIODE ARR SCHOT 120V 10A FLATPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,361

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

V10KM120DU-M3/I from Vishay General Semiconductor is a dual-die, high-current-density surface-mount Trench MOS Barrier Schottky rectifier in FlatPAK 5×6 package, rated for 120 V reverse voltage and 5 A average forward current per diode, with ultra-low 0.54 V forward voltage at 5 A and 125 °C - optimized for low-voltage, high-frequency DC/DC converters in automotive and industrial power supplies.

For engineers reviewing the V10KM120DU-M3/I datasheet, V10KM120DU-M3/I pinout, V10KM120DU-M3/I application, or V10KM120DU-M3/I equivalent, key selection criteria include its AEC-Q101-qualified variant availability (HM3 suffix), MSL Level 1 moisture sensitivity, 175 °C max junction temperature, and separated cathode configuration enabling independent diode control in synchronous rectification and polarity protection circuits.

Technical Context

This device integrates two independent Schottky diodes in a single FlatPAK 5×6 thermally enhanced package with matte tin-plated leads and dual thermal pads. Each diode features trench MOS architecture delivering low VF and high efficiency at high switching frequencies.

It operates across -40 °C to +175 °C junction temperature range, supports 100 A non-repetitive surge current per diode, and achieves RθJM = 3.0 °C/W (typ) when mounted on an infinite heatsink - critical for compact, high-power-density converter designs where thermal management is constrained.

Key Specifications

Parameter Value and Actual Design Meaning
VRRM120 V - blocks up to 120 V reverse voltage without breakdown, suitable for 48 V and 60 V bus systems.
IF(AV) per diode5 A - delivers continuous 5 A DC forward current per diode at TA = 25 °C with recommended PCB pad area.
VF at IF = 5 A, TA = 125 °C0.62 V - enables <1.5 W conduction loss per diode at full load and elevated temperature, reducing thermal stress.
IFSM per diode100 A - withstands short-duration 8.3 ms surge currents, supporting robust start-up and fault handling in SMPS.
TJ max.+175 °C - allows operation in under-hood automotive environments and sealed industrial enclosures without derating.
RθJA (per diode)100 °C/W - defines thermal limit in free-air mounting; requires copper pour or thermal vias for >1.5 A sustained operation.
Circuit configurationSeparated cathode - permits independent connection of each diode's cathode, essential for dual-output or interleaved converter topologies.

Pinout & Package

Package: FlatPAK 5 × 6 mm surface-mount package with dual exposed thermal pads (pins 1–2 and 7–8), matte tin-plated leads, UL 94 V-0 molding compound, and MSL Level 1 rating.

Pin/Terminal Circuit Role Design Meaning
1 & 2Anode 1Input terminal for first Schottky diode; electrically isolated from Anode 2 (pins 3 & 4).
3 & 4Anode 2Input terminal for second Schottky diode; enables dual-channel freewheeling or independent polarity protection.
5 & 6Cathode 1Output terminal for first diode; separated from Cathode 2 (pins 7 & 8) to support asymmetric output configurations.
7 & 8Cathode 2Output terminal for second diode; allows independent grounding or rail connection in dual-output DC/DC stages.

Key Features

Feature Design Value
Trench MOS Schottky technologyEnables 0.54 V VF at 5 A/125 °C - reduces conduction losses by ≥25 % vs. planar Schottky alternatives in same package.
AEC-Q101 qualification (HM3 variant)Validated for automotive under-hood applications including engine control units and ADAS power modules.
FlatPAK 5×6 dual thermal pad layoutProvides 2× independent thermal paths (RθJM = 3.0 °C/W typ per diode), improving heat extraction over SO-8 or TO-252.
Separated cathode configurationSupports flexible circuit routing - e.g., one cathode tied to ground, the other to a regulated rail in dual-output buck converters.
MSL Level 1, 260 °C reflow compatibleEliminates pre-bake requirement and supports standard SMT assembly lines without moisture-related delamination risk.

Applications

Automotive DC/DC Converters Industrial 48 V Power Distribution

Use Scenario: Step-down conversion from 48 V battery to 12 V or 5 V rails in EV auxiliary power units and body control modules.

IC Role / Device Role / Timing Role: Freewheeling diode in synchronous buck topology, operating at 300–500 kHz switching frequency.

Use Value: 0.62 V VF at 5 A/125 °C minimizes power loss and thermal rise in space-constrained under-dash locations.

Use Scenario: High-efficiency 48 V-to-12 V intermediate bus conversion in factory automation PLCs and motor drives.

IC Role / Device Role / Timing Role: Dual-channel output rectifier enabling independent regulation of logic and analog supply rails.

Use Value: Separated cathodes allow independent feedback loop design and reduce cross-regulation between outputs.

Polarity Protection Circuits Low-Voltage Freewheeling in Telecom PSUs

Use Scenario: Reverse-voltage protection at input stage of 24 V industrial sensors and IoT edge nodes.

IC Role / Device Role / Timing Role: Low-loss series diode preventing damage during incorrect battery connection or hot-swap events.

Use Value: 0.54 V VF ensures <2.7 W loss at 5 A, avoiding thermal shutdown while maintaining >98 % efficiency.

Use Scenario: Freewheeling path in telecom half-bridge DC/DC modules supplying 3.3 V/10 A to FPGA and ASIC loads.

IC Role / Device Role / Timing Role: High-current, low-inductance rectifier replacing discrete dual-Schottky solutions to reduce board area.

Use Value: FlatPAK 5×6 footprint saves >40 % PCB area vs. SO-8 dual-diode packages while sustaining 100 A surge capability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
V10KM120DUHM3/IAEC-Q101 qualified; identical electrical specs and package; HM3 suffix denotes automotive qualification.Required for automotive production programs needing PPAP documentation and extended temperature validation.Select V10KM120DUHM3/I when automotive qualification is mandatory; otherwise V10KM120DU-M3/I suffices for industrial use.
SS10120CT-E3/57TTO-277 package; higher VF (0.85 V @ 5 A); no AEC-Q101 option; RθJA ≈ 120 °C/W.Limited to lower-power or cost-sensitive consumer-grade applications due to inferior thermal performance.Choose only if legacy TO-277 footprint must be retained; avoid where thermal density or automotive compliance matters.

Compared with V10KM120DUHM3/I, the V10KM120DU-M3/I offers identical performance but excludes automotive qualification - making it ideal for industrial and telecom applications where cost and lead time are prioritized. Versus SS10120CT-E3/57T, the V10KM120DU-M3/I delivers superior thermal resistance, lower VF, and smaller footprint - directly enabling higher power density and reliability in modern SMPS designs.

Availability

V10KM120DU-M3/I is available at Aetrix Electronics and suitable for automotive DC/DC converters, industrial 48 V power distribution systems, and polarity protection circuits requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for V10KM120DU-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and optoelectronics for automotive, industrial, and computing markets.

The V10KM120DU-M3/I belongs to Vishay's high-current-density Trench MOS Schottky rectifier family, engineered specifically for high-efficiency, high-frequency power conversion in space- and thermal-constrained applications.

FAQ

What is the maximum junction temperature rating for the V10KM120DU-M3/I?

The V10KM120DU-M3/I has a maximum junction temperature (TJ max.) of +175 °C, verified per Vishay's datasheet revision 15-Jul-2025. This rating enables reliable operation in under-hood automotive environments and sealed industrial enclosures. Derating curves in Figure 1 confirm usable current capacity down to -40 °C ambient, and thermal impedance data supports thermal modeling using RθJM = 3.0 °C/W (typ) with infinite heatsink mounting. The V10KM120DU-M3/I must not exceed this TJ limit under any steady-state or transient condition.

Is the V10KM120DU-M3/I pin-compatible with the AEC-Q101-qualified V10KM120DUHM3/I?

Yes - the V10KM120DU-M3/I and V10KM120DUHM3/I share identical pinout, package dimensions (FlatPAK 5×6), electrical specifications, and thermal characteristics. The sole difference is automotive qualification: HM3 suffix indicates AEC-Q101 testing and PPAP-ready documentation. No PCB layout change is required when upgrading from V10KM120DU-M3/I to V10KM120DUHM3/I in existing designs targeting automotive release. The V10KM120DU-M3/I remains fully functional in those layouts.

What does "separated cathode" mean for the V10KM120DU-M3/I, and how does it affect circuit design?

"Separated cathode" means the V10KM120DU-M3/I provides two independent cathode terminals (pins 5–6 and 7–8), allowing each internal Schottky diode to be connected to different reference points - e.g., one cathode to ground and the other to a regulated 5 V rail. This enables dual-output buck converters, independent polarity protection paths, or interleaved freewheeling configurations. Unlike common-cathode dual diodes, the V10KM120DU-M3/I avoids shared current paths and voltage coupling, preserving regulation accuracy and fault isolation.

Does the V10KM120DU-M3/I require special PCB layout considerations for thermal performance?

Yes - the V10KM120DU-M3/I uses a FlatPAK 5×6 package with dual exposed thermal pads (pins 1–2 and 7–8). To achieve RθJA = 100 °C/W (typ), Vishay specifies a minimum copper pad area per thermal pad and recommends ≥4 thermal vias per pad connected to inner-layer ground planes. Insufficient copper or missing vias will raise junction temperature beyond safe limits at >2.5 A. The V10KM120DU-M3/I datasheet provides exact footprint dimensions and via placement guidance on page 4.

What is the reverse leakage current specification for the V10KM120DU-M3/I at 120 V and 125 °C?

At VR = 120 V and TA = 125 °C, the V10KM120DU-M3/I exhibits a maximum reverse leakage current (IR) of 1.6 mA per diode, as specified in the Electrical Characteristics table on page 2 of the datasheet. This value reflects worst-case behavior under high-temperature, high-voltage bias - critical for evaluating standby power loss in always-on systems. Typical IR at these conditions is lower (≈0.8 mA), but design margins must use the 1.6 mA max value for thermal and efficiency calculations involving the V10KM120DU-M3/I.

V10KM120DU-M3/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Configuration:
2 Independent
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
120 V
Current - Average Rectified (Io) (per Diode):
10A
Voltage - Forward (Vf) (Max) @ If:
890 mV @ 5 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
350 µA @ 120 V
Operating Temperature - Junction:
-40°C ~ 175°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
FlatPAK 5x6 (Dual)

V10KM120DU-M3/I FAQ

1.How can I place an order for V10KM120DU-M3/I through Aetrix?

Please submit a Request for Quotation (RFQ) for V10KM120DU-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for V10KM120DU-M3/I reliable?

The price and inventory of V10KM120DU-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for V10KM120DU-M3/I is usually 5 days.

3.What payment methods are accepted for V10KM120DU-M3/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for V10KM120DU-M3/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for V10KM120DU-M3/I?

V10KM120DU-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your V10KM120DU-M3/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for V10KM120DU-M3/I?

For technical support, including V10KM120DU-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your V10KM120DU-M3/I requirements.

6.How does Aetrix verify that V10KM120DU-M3/I is sourced from the original manufacturer or authorized distributors?

All V10KM120DU-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that V10KM120DU-M3/I meets industry standards.

7.What is the process for return or replacement of V10KM120DU-M3/I?

All V10KM120DU-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with V10KM120DU-M3/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The V10KM120DU-M3/I part is unused and in its original packaging.

Return procedure for V10KM120DU-M3/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

V10KM120DU-M3/I Tags

  • V10KM120DU-M3/I
  • V10KM120DU-M3/I PDF
  • V10KM120DU-M3/I Datasheet
  • V10KM120DU-M3/I Specifications
  • V10KM120DU-M3/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division V10KM120DU-M3/I
  • Buy V10KM120DU-M3/I
  • V10KM120DU-M3/I Price
  • V10KM120DU-M3/I Distributor
  • V10KM120DU-M3/I Supplier
  • V10KM120DU-M3/I Wholesale
Related Products
BAV99-7-F
BAV99-7-F

Diodes Incorporated

BAT54C-7-F
BAT54C-7-F

Diodes Incorporated

BAV99,215
BAV99,215

Nexperia USA Inc.

BAT54SLT1G
BAT54SLT1G

onsemi

BAV70LT1G
BAV70LT1G

onsemi

BAT54CLT1G
BAT54CLT1G

onsemi

BAT54S-7-F
BAT54S-7-F

Diodes Incorporated

BAV99LT1G
BAV99LT1G

onsemi

BAT54S,215
BAT54S,215

Nexperia USA Inc.

BAS40-04LT1G
BAS40-04LT1G

onsemi

MMBD1503-TP
MMBD1503-TP

Micro Commercial Co

BAV99WT1G
BAV99WT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER