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Vishay General Semiconductor - Diodes Division V1F22HM3/I
- Part No.:
- V1F22HM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- DO-219AB
- Datasheet:
-
V1F22HM3/I.pdf
- Description:
- DIODE SCHOTTKY 200V 1A DO219AB
- Quantity:
- Payment:
- Shipping:
Inventory:9,463
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Product details
Overview
V1F22HM3/I from Vishay General Semiconductor is a surface-mount Trench MOS Barrier Schottky (TMBS®) rectifier in SMF (DO-219AB) package, rated for 200 V repetitive peak reverse voltage, 1.0 A average forward current, and 0.64 V forward voltage at 1 A and 125 °C - optimized for high-frequency DC/DC converters and automotive polarity protection.
For engineers reviewing the V1F22HM3/I datasheet, V1F22HM3/I pinout, V1F22HM3/I application, or V1F22HM3/I equivalent, key selection criteria include its AEC-Q101 qualification, low RθJA of 125 °C/W, 175 °C max junction temperature, and compatibility with automated SMT placement on standard SOD-123W footprints.
Technical Context
This TMBS® rectifier uses trench MOS Schottky technology to achieve lower forward voltage and reduced switching losses versus planar Schottky diodes. Its single-anode/cathode configuration supports unidirectional conduction in freewheeling and reverse-polarity protection paths.
The device operates across -40 °C to +175 °C junction temperature range and meets J-STD-020 MSL Level 1 with 260 °C reflow peak. It is halogen-free, RoHS-compliant, and qualified to AEC-Q101 when ordered with HM3 suffix.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 200 V - supports input rails up to 160 V DC in industrial and automotive power supplies without breakdown. |
| IF(AV) | 1.0 A - continuous forward current rating at 75 °C mount temperature per derating curve (Fig.1). |
| VF @ 1 A, 125 °C | 0.64 V - enables <1.0 W conduction loss at full load, reducing thermal stress in compact converters. |
| IFSM | 30 A - withstands 8.3 ms surge events such as inrush or load dump transients. |
| TJ max | +175 °C - allows operation in under-hood automotive environments and high-ambient industrial enclosures. |
| RθJA | 125 °C/W - requires ≥25 mm² copper pad for thermal management in free-air conditions. |
| CJ | 75 pF @ 4 V, 1 MHz - minimizes capacitive switching loss and EMI in >100 kHz DC/DC topologies. |
Pinout & Package
Package: SMF (DO-219AB), low-profile surface-mount case with matte tin-plated terminals; compatible with SOD-123W footprint and wave/reflow soldering per J-STD-002.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to input/source side; must be routed with low-inductance trace in high-dI/dt applications. |
| Cathode | Forward current exit point | Marked with color band; ties to ground or return path; serves as thermal interface to PCB copper pad. |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOS Schottky technology | Reduces VF by ~15% vs. planar Schottky at 1 A/125 °C, lowering conduction loss and heat generation. |
| AEC-Q101 qualified (HM3 suffix) | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per AEC standard. |
| MSL Level 1, 260 °C peak | Enables single-pass lead-free reflow without moisture sensitivity concerns or baking requirements. |
| Halogen-free & RoHS-compliant | Meets EU Directive 2011/65/EU and IPC-1752A material declaration requirements for green manufacturing. |
| Low RθJM = 30 °C/W | Supports efficient heat transfer from junction to mounting pad, enabling higher power density in constrained layouts. |
Applications
| Automotive Polarity Protection | High-Frequency DC/DC Converter Output Rectification |
|---|---|
Use Scenario: Reverse-battery connection protection in 12 V/24 V vehicle ECUs and infotainment systems. IC Role / Device Role / Timing Role: Unidirectional blocking diode placed between battery input and system rail. Use Value: Prevents damage during jump-start misconnection; leverages 175 °C TJ max and AEC-Q101 qualification for under-hood reliability. |
Use Scenario: Secondary-side rectification in 300–500 kHz isolated flyback or forward converters. IC Role / Device Role / Timing Role: High-efficiency synchronous replacement for Schottky diodes in low-voltage output stages. Use Value: 0.64 V VF at 125 °C reduces conduction loss by >200 mW vs. legacy 0.85 V parts, improving efficiency at light-to-moderate loads. |
| Industrial Freewheeling Diode | Commercial AC-DC Adapter Output Stage |
Use Scenario: Flyback energy recirculation in 24 V/48 V industrial motor drivers and PLC I/O modules. IC Role / Device Role / Timing Role: Clamp diode across inductive loads to suppress voltage spikes during switch-off. Use Value: 30 A IFSM handles transient energy without degradation; 75 pF CJ limits ringing in fast-switching gate drivers. |
Use Scenario: Output rectification in compact 5–12 V, 1–2 A wall adapters for networking and consumer devices. IC Role / Device Role / Timing Role: Low-profile, automated-placement rectifier replacing larger DO-214AC parts. Use Value: SMF (DO-219AB) package saves >40% board area vs. SMA; MSL Level 1 ensures robustness in high-volume SMT lines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| V1F22-M3/I | No AEC-Q101 qualification; same electrical specs and SMF package. | Suitable for commercial/industrial use only; not approved for automotive production. | Select when AEC-Q101 is not required and cost optimization is prioritized. |
| SS12HE3_A/H | 100 V VRRM, 1 A IF(AV), SMA package, 0.87 V VF @ 1 A/25 °C. | Limited to ≤100 V systems; higher VF increases conduction loss in high-temp operation. | Choose only for legacy SMA-compatible designs where voltage margin permits. |
Compared with V1F22HM3/I, the V1F22-M3/I offers identical performance without automotive qualification, while SS12HE3_A/H trades voltage rating and thermal capability for legacy package compatibility - making V1F22HM3/I the optimal choice for new AEC-Q101-compliant, high-efficiency 200 V designs.
Availability
V1F22HM3/I is available at Aetrix Electronics and suitable for automotive ECUs, industrial DC/DC converters, and commercial power adapters requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.
Supply support for V1F22HM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on high-reliability, high-efficiency power components.
The V1F22HM3/I belongs to Vishay's TMBS® rectifier family, engineered specifically for high-frequency, high-temperature power conversion in automotive and industrial systems where low VF and rugged thermal performance are critical.
FAQ
What is the maximum junction temperature rating for V1F22HM3/I?
The V1F22HM3/I has a maximum junction temperature (TJ) of +175 °C, verified per AEC-Q101 stress testing. This rating enables reliable operation in under-hood automotive environments and high-ambient industrial settings. Thermal design must ensure dPD/dTJ < 1/RθJA (125 °C/W) using the recommended copper pad area. The V1F22HM3/I datasheet specifies derating curves confirming sustained 1.0 A IF(AV) up to 75 °C mount temperature.
Is V1F22HM3/I pin-compatible with standard SOD-123W footprint designs?
Yes, the V1F22HM3/I uses the SMF (DO-219AB) package, which is explicitly stated as compatible with the SOD-123W case outline. Its mechanical dimensions - including 2.9 mm length, 1.4 mm width, and 0.85 mm height - align with IPC-7351B SOD-123W land pattern recommendations. The V1F22HM3/I cathode marking and terminal plating also match SOD-123W assembly standards, supporting drop-in replacement in existing layouts.
Does V1F22HM3/I meet automotive qualification standards?
Yes, the HM3 suffix in V1F22HM3/I denotes full AEC-Q101 qualification, covering stress tests including HTGB, HTRB, temperature cycling, and ESD per JESD22-A114. This certification applies specifically to the V1F22HM3/I variant - not to base P/Ns like V1F22-M3/I. The V1F22HM3/I datasheet revision 12-Apr-2023 explicitly states "AEC-Q101 qualified" in the features section and notes compliance in mechanical data.
What is the forward voltage of V1F22HM3/I at elevated temperature?
The V1F22HM3/I exhibits a forward voltage (VF) of 0.64 V at 1.0 A and 125 °C, per the Electrical Characteristics table. At 25 °C, VF is 0.80 V (typical) / 0.88 V (max). This negative temperature coefficient - decreasing VF as temperature rises - is characteristic of Schottky diodes and confirmed in Fig. 3 of the V1F22HM3/I datasheet, showing VF vs. IF curves across -40 °C to 175 °C.
How does V1F22HM3/I compare to conventional planar Schottky rectifiers?
The V1F22HM3/I uses trench MOS barrier technology instead of planar construction, delivering lower VF (0.64 V vs. typical 0.75–0.90 V at 1 A/125 °C), reduced leakage, and improved thermal stability. Its 75 pF junction capacitance is 20–30% lower than comparable planar parts, minimizing switching loss and EMI. These advantages are validated in Vishay's TMBS® comparative application notes and reflected in the V1F22HM3/I's 175 °C TJ max and AEC-Q101 qualification.
V1F22HM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- DO-219AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 880 mV @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 35 µA @ 200 V
- Capacitance @ Vr, F:
- 75pF @ 4V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
- Operating Temperature - Junction:
- -40°C ~ 175°C
V1F22HM3/I FAQ
1.How can I place an order for V1F22HM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for V1F22HM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for V1F22HM3/I reliable?
The price and inventory of V1F22HM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for V1F22HM3/I is usually 5 days.
3.What payment methods are accepted for V1F22HM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for V1F22HM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for V1F22HM3/I?
V1F22HM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your V1F22HM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for V1F22HM3/I?
For technical support, including V1F22HM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your V1F22HM3/I requirements.
6.How does Aetrix verify that V1F22HM3/I is sourced from the original manufacturer or authorized distributors?
All V1F22HM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that V1F22HM3/I meets industry standards.
7.What is the process for return or replacement of V1F22HM3/I?
All V1F22HM3/I units undergo pre-shipment inspection (PSI). If there is an issue with V1F22HM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The V1F22HM3/I part is unused and in its original packaging.
Return procedure for V1F22HM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
V1F22HM3/I Tags
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