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Vishay General Semiconductor - Diodes Division V1F22-M3/I
- Part No.:
- V1F22-M3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- DO-219AB
- Datasheet:
-
V1F22-M3/I.pdf
- Description:
- DIODE SCHOTTKY 200V 1A DO219AB
- Quantity:
- Payment:
- Shipping:
Inventory:4,214
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Product details
Overview
V1F22-M3/I from Vishay General Semiconductor is a surface-mount Trench MOS Barrier Schottky (TMBS®) rectifier in SMF (DO-219AB) package, rated for 200 V repetitive peak reverse voltage, 1.0 A average forward current, and 0.64 V forward voltage at 1 A and 125 °C - used for polarity protection and freewheeling in automotive DC/DC converters.
For engineers reviewing the V1F22-M3/I datasheet, V1F22-M3/I pinout, V1F22-M3/I application, or V1F22-M3/I equivalent, key selection criteria include its AEC-Q101-qualified variant availability, low thermal resistance (RθJM = 30 °C/W), MSL Level 1 rating, and compatibility with automated SMT placement on standard PCB footprints.
Technical Context
This TMBS® rectifier uses trench MOS Schottky architecture to achieve lower forward voltage and reduced switching losses versus planar Schottky diodes. Its single-anode/cathode configuration supports unidirectional conduction in high-frequency power conversion stages.
Designed for operation up to 175 °C junction temperature, it delivers stable reverse leakage (<300 μA at 200 V, 125 °C) and exhibits 75 pF junction capacitance at 4.0 V - enabling efficient performance in >100 kHz DC/DC topologies without excessive capacitive loading.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 200 V - maximum repetitive reverse blocking capability; suitable for 12–48 V system inputs with 2× safety margin |
| IF(AV) | 1.0 A - continuous forward current rating at 125 °C ambient on recommended copper pad; defines steady-state power handling |
| VF @ 1 A, 125 °C | 0.64 V - low conduction loss enables <0.64 W dissipation per device at full load, reducing thermal design burden |
| IFSM | 30 A - surge current rating for 8.3 ms half-sine; supports inrush and transient overload in converter startup |
| TJ max. | 175 °C - extended junction temperature range allows operation in under-hood automotive environments |
| RθJM | 30 °C/W - low junction-to-mount thermal resistance enables effective heat transfer to PCB copper or heatsink |
| CJ | 75 pF @ 4 V, 1 MHz - low capacitance minimizes switching node ringing and EMI in high-frequency buck/boost stages |
Pinout & Package
Package: SMF (DO-219AB), low-profile surface-mount case with matte tin-plated terminals; compatible with SOD-123W footprint layout and wave/reflow soldering per J-STD-020 MSL Level 1 (260 °C peak).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to input/power rail side; must be routed with adequate current-carrying trace width (≥0.5 mm for 1 A) |
| Cathode | Forward current exit point / reverse-blocking terminal | Marked with color band; connects to load/ground side; serves as reference for thermal mounting to PCB copper pour |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOS Schottky technology | Enables 0.64 V VF at 125 °C - 15–20 % lower than comparable planar Schottky diodes, reducing conduction loss in thermally constrained layouts |
| AEC-Q101 qualification (HM3 variant) | Validated reliability for automotive power modules; V1F22-M3/I shares identical die and package with qualified HM3 variants |
| MSL Level 1, 260 °C peak | Eliminates bake-out requirement prior to reflow; supports single-pass assembly in high-volume SMT lines |
| UL 94 V-0 molding compound | Ensures flame-retardant behavior in enclosed industrial enclosures and automotive junction boxes |
| Halogen-free & RoHS-compliant | Meets IPC-1752A material declaration requirements for EU and global environmental compliance programs |
Applications
| Automotive DC/DC Converters | Industrial Motor Drive Freewheeling |
|---|---|
Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in mild-hybrid vehicles. IC Role / Device Role / Timing Role: Output rectifier in synchronous buck topology, conducting during low-side switch off-time. Use Value: 0.64 V VF at 125 °C reduces output stage loss by ~0.15 W vs. legacy Schottky, improving efficiency and easing thermal management. |
Use Scenario: Flyback path for inductive loads in HVAC blower motor drivers. IC Role / Device Role / Timing Role: Unidirectional freewheeling diode across motor winding during PWM off-cycle. Use Value: 30 A IFSM withstands motor stall currents; 175 °C TJ max ensures reliability during sustained overloads. |
| Commercial Power Supply Polarity Protection | Telecom DC/DC Module Input Clamp |
Use Scenario: Reverse-voltage safeguard on 24 V input of PoE-powered network switches. IC Role / Device Role / Timing Role: Series-connected blocking diode preventing damage from miswired AC adapters. Use Value: 200 V VRRM provides headroom above 24 V nominal; low VF limits insertion loss to <2.7 % at full load. |
Use Scenario: Input-stage clamp in isolated 48 V to 3.3 V telecom DC/DC modules. IC Role / Device Role / Timing Role: Reverse-biased protection element against input transients and hot-swap surges. Use Value: 300 μA max IR at 200 V/125 °C ensures minimal standby leakage; DO-219AB footprint fits tight board spacing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| V1F22HM3_A/I | AEC-Q101 qualified; otherwise identical electrical specs and SMF package | Required for automotive production; same thermal and electrical behavior in non-automotive use | Select V1F22HM3_A/I when automotive qualification documentation (test reports, PPAP) is mandatory |
| SS120-M3/84A | 100 V VRRM, 1.0 A IF(AV), 0.87 V VF @ 1 A/25 °C; SMA package (larger footprint, higher RθJA) | Limited to ≤24 V systems; less efficient at elevated temperature due to higher VF drift | Use only if 200 V rating is unnecessary and existing SMA footprint reuse is prioritized over efficiency |
Compared with V1F22-M3/I, the V1F22HM3_A/I offers identical performance with certified automotive reliability, while SS120-M3/84A trades voltage rating and thermal efficiency for legacy package compatibility - making V1F22-M3/I optimal for new 200 V-capable, space-constrained, high-efficiency designs.
Availability
V1F22-M3/I is available at Aetrix Electronics and suitable for automotive DC/DC converters, industrial motor drive freewheeling, and commercial power supply polarity protection requiring stable component supply and consistent tape-and-reel delivery.
Supply support for V1F22-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and optoelectronics for demanding power and signal applications.
The V1F22-M3/I belongs to Vishay's eSMP® Series of ultra-low-profile surface-mount rectifiers, engineered specifically for high-density power conversion where thermal performance and automated assembly compatibility are critical.
FAQ
What is the maximum junction temperature rating for V1F22-M3/I?
The V1F22-M3/I has a maximum junction temperature (TJ) of +175 °C, verified per Vishay's thermal characterization data. This rating enables reliable operation in under-hood automotive environments and sealed industrial enclosures where ambient temperatures exceed 105 °C. The V1F22-M3/I maintains specified electrical parameters up to this limit when mounted on the recommended copper pad area per datasheet Figure 1.
Is V1F22-M3/I AEC-Q101 qualified?
The V1F22-M3/I itself is not AEC-Q101 qualified; however, its automotive-grade variant V1F22HM3_A/I shares identical die, package, and electrical specifications and is fully AEC-Q101 qualified. The "HM3" suffix denotes the qualified version, and both parts use the same SMF (DO-219AB) package and manufacturing flow - allowing direct qualification transfer for production validation.
What is the thermal resistance from junction to mount (RθJM) for V1F22-M3/I?
The V1F22-M3/I has a typical junction-to-mount thermal resistance (RθJM) of 30 °C/W when mounted on the recommended copper pad area per Vishay document 87474. This value reflects heat transfer directly from the die to the PCB copper, making it essential for thermal modeling in compact layouts where heatsinks are impractical - unlike RθJA, which depends heavily on board layout.
Does V1F22-M3/I support lead-free reflow soldering?
Yes, V1F22-M3/I is fully compatible with lead-free reflow soldering processes, rated MSL Level 1 per J-STD-020 with a maximum peak temperature of 260 °C. Its matte tin-plated terminals meet JESD 22-B102 solderability requirements, and the molding compound complies with UL 94 V-0 flammability standards - ensuring robust intermetallic formation and long-term joint integrity.
What does the "-M3/I" suffix indicate in V1F22-M3/I?
The "-M3" suffix denotes halogen-free, RoHS-compliant construction per Vishay's material policy, while "/I" specifies packaging in 13-inch diameter plastic tape and reel with a base quantity of 10,000 units. This format is optimized for high-volume SMT placement equipment and differs from the "/H" variant (7-inch reel, 3,000 units), with identical electrical and thermal performance across both delivery modes.
V1F22-M3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- DO-219AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 880 mV @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 35 µA @ 200 V
- Capacitance @ Vr, F:
- 75pF @ 4V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
- Operating Temperature - Junction:
- -40°C ~ 175°C
V1F22-M3/I FAQ
1.How can I place an order for V1F22-M3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for V1F22-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for V1F22-M3/I reliable?
The price and inventory of V1F22-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for V1F22-M3/I is usually 5 days.
3.What payment methods are accepted for V1F22-M3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for V1F22-M3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for V1F22-M3/I?
V1F22-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your V1F22-M3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for V1F22-M3/I?
For technical support, including V1F22-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your V1F22-M3/I requirements.
6.How does Aetrix verify that V1F22-M3/I is sourced from the original manufacturer or authorized distributors?
All V1F22-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that V1F22-M3/I meets industry standards.
7.What is the process for return or replacement of V1F22-M3/I?
All V1F22-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with V1F22-M3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The V1F22-M3/I part is unused and in its original packaging.
Return procedure for V1F22-M3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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