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Vishay General Semiconductor - Diodes Division V20D202C-M3/I

Part No.:
V20D202C-M3/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
Diode Arrays
Package:
TO-263-3, D2PAK (2 Leads + Tab), Variant
Datasheet:
AetrixV20D202C-M3/I.pdf
Description:
DIODE ARRAY SCHOTTKY 200V 10A
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3

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Product details

Overview

V20D202C-M3/I from Vishay General Semiconductor is a dual high-voltage Trench MOS Barrier Schottky (TMBS®) rectifier in SMPD (TO-263AC) package, configured as common cathode, rated for 200 V repetitive peak reverse voltage, 2 × 10 A average forward current per diode, and 0.68 V forward voltage at 10 A and 125 °C - used in high-frequency DC/DC converters and reverse battery protection circuits.

For engineers reviewing the V20D202C-M3/I datasheet, V20D202C-M3/I pinout, V20D202C-M3/I application, or V20D202C-M3/I equivalent, key selection criteria include its dual common-cathode topology, 175 °C max junction temperature, MSL Level 1 rating, AEC-Q101 qualified variant availability, and low-profile 1.7 mm height for space-constrained power stages.

Technical Context

This device implements second-generation trench MOS Schottky technology to achieve low VF and high dV/dt immunity (10,000 V/μs), enabling efficient operation in fast-switching topologies. Its common-cathode dual-die construction shares a single thermal pad, supporting symmetrical current sharing and simplified PCB layout for OR-ing and freewheeling functions.

The SMPD (TO-263AC) package provides low thermal resistance (RθJC = 2.8 °C/W per diode; RθJA = 58 °C/W), matte tin-plated terminals compliant with J-STD-002 and JESD 22-B102, and meets UL 94 V-0 flammability requirements - optimized for automated SMT placement and reflow up to 260 °C peak.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM200 V - supports input rails up to 160 V DC with margin for transient spikes in industrial and automotive power supplies
IF(AV) per diode10 A - enables continuous 10 A conduction per anode in dual-channel configurations without derating below 125 °C case temp
VF @ 10 A, 125 °C0.68 V - reduces conduction loss to ≤6.8 W per diode, critical for >95 % efficiency in high-density 48 V–12 V DC/DC stages
IFSM150 A - withstands short-duration inrush and fault currents typical in hot-swap and load-dump scenarios
TJ max175 °C - allows operation in under-hood automotive environments and sealed industrial enclosures without active cooling
RθJC2.8 °C/W per diode - enables direct heatsink coupling via exposed cathode pad for thermal management in high-power density designs
MSL LevelLevel 1 (J-STD-020) - permits unlimited floor life and standard reflow profiles without baking preconditioning

Pinout & Package

SMPD (TO-263AC) package with 3-terminal configuration: two anodes (Pin 1 and Pin 3) and one common cathode (Pin 2 / heatsink tab). Exposed metal tab serves as both thermal path and electrical cathode connection; polarity marked on top surface.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1Anode 1Input terminal for first diode channel; connects to high-side switching node in synchronous rectification or OR-ing paths
Pin 2Common Cathode / HeatsinkShared cathode output and primary thermal interface; must be soldered to ≥2 cm² copper pour for RθJA ≤58 °C/W
Pin 3Anode 2Input terminal for second diode channel; enables independent control or redundancy in dual-rail systems

Key Features

FeatureDesign Value
Trench MOS Schottky Gen 2Enables 0.68 V VF at 10 A/125 °C - 15–20 % lower conduction loss vs. planar Schottky equivalents
Common-cathode dual configurationReduces component count and layout area by integrating two matched diodes in single SMPD footprint
1.7 mm profileSupports ultra-low-profile power modules and stacked PCB assemblies where Z-height is constrained to <2.0 mm
AEC-Q101 qualified variant availableHM3 suffix version meets automotive reliability standards for under-hood DC/DC and battery management applications
Halogen-free, RoHS-compliantComplies with IPC-1752A material declaration requirements for green electronics manufacturing and end-of-life recycling

Applications

High-Frequency DC/DC ConvertersReverse Battery Protection

Use Scenario: Primary rectification in 300–1000 kHz isolated flyback or half-bridge converters powering FPGA, ASIC, or telecom line cards.

IC Role / Device Role / Timing Role: Dual-channel synchronous rectifier replacing MOSFETs in secondary-side regulation, leveraging low VF for minimal conduction loss.

Use Value: Achieves >96 % efficiency at full load due to 0.68 V VF and 175 °C TJ rating, reducing heatsink size by 40 % vs. Si FRDs.

Use Scenario: Polarity protection in 12 V/24 V vehicle infotainment and ADAS ECUs where battery reversal must be blocked without voltage drop.

IC Role / Device Role / Timing Role: Low-VF series-blocking diode placed between battery input and system rail, operating continuously at ambient temperatures up to 105 °C.

Use Value: Limits forward drop to ≤0.83 V at 10 A (25 °C), minimizing power loss and thermal stress during sustained operation.

OR-ing Diodes in Redundant Power SuppliesFreewheeling Diodes in Motor Drives

Use Scenario: Parallel power supply inputs (e.g., main + backup DC source) requiring automatic current steering without control circuitry.

IC Role / Device Role / Timing Role: Common-cathode dual diode providing independent anode paths to shared output bus, enabling seamless source switchover.

Use Value: Matched VF across channels ensures balanced current sharing; 150 A IFSM handles momentary load transients during switchover events.

Use Scenario: Inductive kickback clamping in 24–48 V BLDC motor gate drivers and H-bridge inverters driving pumps or fans.

IC Role / Device Role / Timing Role: Fast-recovery freewheeling path for back-EMF energy return, operating at switching frequencies up to 200 kHz.

Use Value: 10,000 V/μs dV/dt rating prevents false turn-on during rapid voltage transitions; 175 °C TJ supports operation near motor windings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual Schottky rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
V20D202CHM3_B/IAEC-Q101 qualified; identical electrical specs and package; B revision adds enhanced process control for automotive lot traceabilityRequired for automotive OEM designs needing PPAP documentation and zero-defect reliability validationSelect V20D202CHM3_B/I when qualifying for ASIL-B systems or Tier-1 automotive supply chains
STPS20H100CG-TR100 V VRRM (vs. 200 V); TO-263AB package; 20 A total IF(AV); VF = 0.75 V @ 10 A, 150 °CSuitable only for ≤48 V systems; lacks 200 V margin needed for 400 V EV auxiliary supplies or industrial 380 V AC-derived railsChoose STPS20H100CG-TR only for cost-sensitive 12–48 V non-automotive applications where 100 V rating is sufficient

Compared with V20D202C-M3/I, the HM3_B/I variant adds automotive qualification without electrical trade-offs, while STPS20H100CG-TR offers lower cost but sacrifices 100 V reverse voltage headroom and automotive compliance - making V20D202C-M3/I optimal for 200 V industrial and extended-temperature DC/DC designs.

Availability

V20D202C-M3/I is available at Aetrix Electronics and suitable for high-frequency DC/DC converters, reverse battery protection circuits, and OR-ing diode applications requiring stable component supply, long-term manufacturability, and RoHS-compliant sourcing.

Supply support for V20D202C-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on power efficiency and reliability.

The V20D202C-M3/I belongs to Vishay's TMBS® trench Schottky rectifier product line, engineered specifically for high-efficiency, high-temperature power conversion in automotive, industrial, and telecom infrastructure systems.

FAQ

What is the maximum junction temperature rating for the V20D202C-M3/I?

The V20D202C-M3/I has a maximum junction temperature (TJ max) of +175 °C, verified per Vishay Document Number 87747. This rating enables reliable operation in under-hood automotive environments and sealed industrial enclosures. The device maintains specified VF and IR performance up to this limit, provided thermal design respects RθJC = 2.8 °C/W per diode and adequate PCB copper area is used for heat dissipation. Derating curves in Figure 1 confirm 10 A per diode capability at 125 °C case temperature.

Is the V20D202C-M3/I pin-compatible with other SMPD-packaged dual Schottky rectifiers?

The V20D202C-M3/I uses the standard SMPD (TO-263AC) outline with 3-terminal common-cathode pinout (Anode–Cathode–Anode), matching industry-standard land patterns for TO-263AC. However, pin compatibility does not guarantee functional equivalence - V20D202C-M3/I's 200 V VRRM and 0.68 V VF at 10 A/125 °C differ from lower-voltage variants like STPS20H100CG-TR. Always verify voltage rating, thermal resistance, and polarity marking before substitution.

Does the V20D202C-M3/I meet automotive qualification standards?

The base V20D202C-M3/I is not AEC-Q101 qualified; however, the automotive-grade variant V20D202CHM3_B/I carries full AEC-Q101 qualification per Vishay's ordering matrix. Both share identical electrical specs and SMPD package, but HM3_B/I includes enhanced process controls, lot traceability, and PPAP documentation required for automotive OEM acceptance. For non-automotive industrial use, V20D202C-M3/I remains fully compliant with RoHS and halogen-free standards.

What is the thermal resistance from junction to case for the V20D202C-M3/I?

The V20D202C-M3/I has a typical junction-to-case thermal resistance (RθJC) of 2.8 °C/W per diode, as specified in the "Thermal Characteristics" table of Vishay Document Number 87747. This value applies when heat is extracted solely through the exposed cathode pad (Pin 2). For system-level thermal modeling, note that RθJA is 58 °C/W under free-air conditions, but improves significantly with ≥2 cm² of 70 μm copper on FR4 PCB - see Figure 7 for copper-area dependency curves.

How does the V20D202C-M3/I perform at elevated temperatures?

The V20D202C-M3/I maintains low forward voltage - 0.68 V at 10 A and 125 °C - and exhibits controlled reverse leakage: ≤10 mA at 200 V and 125 °C. Its 175 °C TJ max and robust dV/dt rating (10,000 V/μs) ensure stable operation in thermally demanding environments such as motor drive heatsinks or enclosed power supplies. Derating curves (Fig. 1) show usable current remains above 8 A per diode even at 150 °C case temperature, supporting high-temperature industrial deployments.

V20D202C-M3/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Series:
eSMP®, TMBS®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Configuration:
1 Pair Common Cathode
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io) (per Diode):
10A
Voltage - Forward (Vf) (Max) @ If:
900 mV @ 10 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
150 µA @ 200 V
Operating Temperature - Junction:
-40°C ~ 175°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
-

V20D202C-M3/I FAQ

1.How can I place an order for V20D202C-M3/I through Aetrix?

Please submit a Request for Quotation (RFQ) for V20D202C-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for V20D202C-M3/I reliable?

The price and inventory of V20D202C-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for V20D202C-M3/I is usually 5 days.

3.What payment methods are accepted for V20D202C-M3/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for V20D202C-M3/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for V20D202C-M3/I?

V20D202C-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your V20D202C-M3/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for V20D202C-M3/I?

For technical support, including V20D202C-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your V20D202C-M3/I requirements.

6.How does Aetrix verify that V20D202C-M3/I is sourced from the original manufacturer or authorized distributors?

All V20D202C-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that V20D202C-M3/I meets industry standards.

7.What is the process for return or replacement of V20D202C-M3/I?

All V20D202C-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with V20D202C-M3/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The V20D202C-M3/I part is unused and in its original packaging.

Return procedure for V20D202C-M3/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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