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Vishay General Semiconductor - Diodes Division V2N103-M3/I

Part No.:
V2N103-M3/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
Single Diodes
Package:
2-VDFN
Datasheet:
AetrixV2N103-M3/I.pdf
Description:
2A, 100V, DFN3820A TRENCH SKY RE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:13,939

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Product details

Overview

V2N103-M3/I from Vishay General Semiconductor is a surface-mount Trench MOS Barrier Schottky (TMBS®) rectifier in DFN3820A package, rated for 100 V reverse voltage and 2.0 A average forward current, with low 0.45 V forward voltage at 1.0 A and 125 °C junction temperature-optimized for DC/DC converters and polarity protection in space-constrained power stages.

For engineers reviewing the V2N103-M3/I datasheet, V2N103-M3/I pinout, V2N103-M3/I application, or V2N103-M3/I equivalent, key selection criteria include its MSL Level 1 rating, side-wettable flanks for AOI compatibility, AEC-Q101-qualified variant availability (V2N103HM3/I), and thermal resistance of 140 °C/W (junction-to-ambient) on standard FR4 PCB.

Technical Context

The V2N103-M3/I implements trench MOS Schottky technology to achieve low forward voltage drop and high switching efficiency at high frequencies, eliminating minority-carrier recovery losses typical of PN junction diodes. Its single-anode/cathode configuration supports unidirectional conduction in low-voltage (<100 V) power rails.

Designed for surface-mount assembly on 10 mm × 10 mm copper pads, it delivers 1.6 A average forward current under free-air conditions (FR4, 2 oz. copper) and sustains 50 A non-repetitive surge current per JESD22-A112. Thermal performance is governed by RθJA = 140 °C/W and RθJM = 6 °C/W, enabling operation up to +150 °C junction temperature.

Key Specifications

Parameter Value and Actual Design Meaning
VRRM 100 V - Maximum repetitive reverse blocking capability without breakdown in polarity-protection or freewheeling paths.
IF(AV) 2.0 A (at 10 mm × 10 mm Cu pad) - Continuous DC output current handling in DC/DC converter outputs.
VF @ 1.0 A, 125 °C 0.45 V - Low conduction loss enabling >92% efficiency in 5–24 V input buck converters.
IFSM 50 A - Surge current tolerance for inrush or fault events in automotive body-control modules.
RθJA 140 °C/W - Junction-to-ambient thermal resistance on standard FR4 PCB, defining heatsinking requirements.
CJ 260 pF @ 4.0 V - Low junction capacitance minimizing switching losses and EMI in >100 kHz inverters.
TJ max. +150 °C - Extended junction temperature rating supporting under-hood automotive and industrial environments.

Pinout & Package

Package: DFN3820A - leadless, halogen-free, RoHS-compliant, side-wettable flanks for automated optical inspection (AOI); dimensions 3.95 mm × 2.18 mm × 0.88 mm (L × W × H).

Pin/Terminal Circuit Role Design Meaning
Anode (A) Forward current entry point Connected to input/power rail side; requires low-impedance trace routing to minimize IR drop.
Cathode (K) Forward current exit point Connected to load/GND side; serves as thermal mounting interface-must be soldered to large copper area.

Key Features

Feature Design Value
Trench MOS Schottky architecture Eliminates reverse recovery charge (Qrr ≈ 0), enabling zero-loss switching in synchronous rectifier topologies.
Side-wettable flanks Enables reliable solder-joint inspection via AOI without X-ray, reducing post-SMT defect escape in high-volume manufacturing.
MSL Level 1 (260 °C peak) Compatible with standard lead-free reflow profiles without baking or special handling-reducing production overhead.
AEC-Q101 qualified variant available V2N103HM3/I meets automotive stress-test requirements for engine control units and ADAS power supplies.
Low profile (0.88 mm height) Supports ultra-thin power modules in portable medical devices and wearable electronics where Z-height is constrained.

Applications

DC/DC Converter Output Rectification Polarity Protection

Use Scenario: Step-down (buck) converter in 12 V → 5 V/3.3 V power supply for microcontroller subsystems.

IC Role / Device Role / Timing Role: Output rectifier replacing conventional Schottky diodes to reduce conduction loss and improve light-load efficiency.

Use Value: 0.45 V VF at 125 °C lowers power dissipation by ~27% vs. legacy 0.62 V diodes, extending thermal margin in sealed enclosures.

Use Scenario: Reverse-voltage protection circuit on USB-C or PoE-powered edge sensor nodes.

IC Role / Device Role / Timing Role: Series-blocking diode preventing damage from miswired inputs or hot-swap transients.

Use Value: 100 V VRRM and 50 A IFSM withstand 15 V/10 A surge events while maintaining <10 mW standby loss at 5 V.

Freewheeling Diode in Motor Drivers High-Frequency Inverter Stage

Use Scenario: Freewheel path in 24 V brushed DC motor H-bridge driving HVAC actuators.

IC Role / Device Role / Timing Role: Clamp inductive kickback during PWM turn-off, suppressing voltage spikes across MOSFETs.

Use Value: Near-zero Qrr prevents cross-conduction losses and enables 50 kHz+ PWM without snubbers.

Use Scenario: Output stage of 48 V → 400 V boost inductorless solar microinverters.

IC Role / Device Role / Timing Role: High-frequency rectifier in resonant LLC topology operating at 200–500 kHz.

Use Value: 260 pF CJ minimizes capacitive switching loss and EMI generation above 100 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
V2N103HM3/I AEC-Q101 qualified; identical electrical specs but enhanced reliability testing for automotive use. Required for under-hood ECUs, body controllers, and ADAS power supplies meeting ISO/TS 16949. Select when automotive qualification is mandatory; otherwise V2N103-M3/I suffices for industrial/commercial designs.
SS210H-LTP DO-220AA (SMP) package; 100 V/2 A rating; VF = 0.55 V @ 1 A, 25 °C; higher RθJA = 190 °C/W. Better suited for through-hole prototyping or legacy board upgrades where DFN rework is impractical. Choose for manual assembly or mixed-technology boards; avoid where thermal performance or AOI is critical.

Compared with V2N103HM3/I, the V2N103-M3/I offers identical electrical performance at lower cost and qualification overhead, while SS210H-LTP trades compactness and thermal efficiency for mechanical robustness and assembly flexibility-making each optimal for distinct design constraints.

Availability

V2N103-M3/I is available at Aetrix Electronics and suitable for DC/DC converters, polarity protection circuits, and freewheeling applications requiring stable component supply, consistent halogen-free RoHS compliance, and support for high-volume SMT production.

Supply support for V2N103-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in power rectifiers, MOSFETs, optoelectronics, and passive components with emphasis on high-reliability, high-efficiency solutions.

The V2N103-M3/I belongs to Vishay's TMBS® (Trench MOS Barrier Schottky) product line, engineered specifically for low-loss, high-frequency power conversion in automotive, industrial, and computing applications where thermal density and efficiency are critical.

FAQ

What is the maximum junction temperature rating for the V2N103-M3/I?

The V2N103-M3/I has a maximum junction temperature (TJ) of +150 °C, validated per JEDEC standards. This rating allows sustained operation in high-ambient environments such as automotive engine bays or enclosed industrial power supplies. Derating curves in the datasheet confirm 2.0 A IF(AV) is maintained up to +125 °C ambient when mounted on a 10 mm × 10 mm copper pad-critical for thermal design validation of the V2N103-M3/I.

Does the V2N103-M3/I have side-wettable flanks for AOI inspection?

Yes, the V2N103-M3/I uses the DFN3820A package with side-wettable flanks, explicitly designed for automatic optical inspection (AOI) of solder joints without requiring X-ray. This feature is confirmed in the Vishay datasheet revision 06-Nov-2024 (Document Number: 98441), and ensures high-yield, low-defect SMT assembly-especially valuable in consumer electronics and IoT device production where the V2N103-M3/I is commonly deployed.

Is the V2N103-M3/I RoHS-compliant and halogen-free?

Yes, the "M3" suffix in V2N103-M3/I denotes halogen-free, RoHS-compliant construction with matte tin-plated terminals compliant with J-STD-002 and JESD22-B102. The molding compound meets UL 94 V-0 flammability rating, and whisker resistance is certified to JESD201 Class 2-making the V2N103-M3/I suitable for environmentally regulated markets including EU, Japan, and North America.

What is the thermal resistance junction-to-ambient (RθJA) for the V2N103-M3/I?

The V2N103-M3/I has a typical RθJA of 140 °C/W when mounted on a standard FR4 PCB with 2 oz. copper and a 10 mm × 10 mm thermal pad, per JEDEC 51-2A. Its maximum RθJA is 175 °C/W under less optimal layout conditions. This value directly determines allowable power dissipation-e.g., at 0.45 VF and 1.0 A, the V2N103-M3/I dissipates 0.45 W and rises ~63 °C above ambient, defining safe operating margins.

How does the V2N103-M3/I differ from the AEC-Q101 qualified version?

The V2N103HM3/I is the AEC-Q101 qualified variant of the same die and package, differing only in extended reliability testing (temperature cycling, HTRB, UHAST) and automotive-grade traceability-not electrical specs. The V2N103-M3/I shares identical VRRM, IF(AV), VF, and thermal parameters but targets commercial/industrial use. Both use the same DFN3820A footprint, enabling BOM flexibility where qualification isn't mandated-key for scalable V2N103-M3/I deployment.

V2N103-M3/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Series:
TMBS®
Package/Case:
2-VDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
100 V
Current - Average Rectified (Io):
1.6A
Voltage - Forward (Vf) (Max) @ If:
670 mV @ 2 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
150 µA @ 100 V
Capacitance @ Vr, F:
260pF @ 4V, 1MHz
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
DFN3820A
Operating Temperature - Junction:
-40°C ~ 150°C

V2N103-M3/I FAQ

1.How can I place an order for V2N103-M3/I through Aetrix?

Please submit a Request for Quotation (RFQ) for V2N103-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for V2N103-M3/I reliable?

The price and inventory of V2N103-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for V2N103-M3/I is usually 5 days.

3.What payment methods are accepted for V2N103-M3/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for V2N103-M3/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for V2N103-M3/I?

V2N103-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your V2N103-M3/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for V2N103-M3/I?

For technical support, including V2N103-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your V2N103-M3/I requirements.

6.How does Aetrix verify that V2N103-M3/I is sourced from the original manufacturer or authorized distributors?

All V2N103-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that V2N103-M3/I meets industry standards.

7.What is the process for return or replacement of V2N103-M3/I?

All V2N103-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with V2N103-M3/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The V2N103-M3/I part is unused and in its original packaging.

Return procedure for V2N103-M3/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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