Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division V35PWM45-M3/I

Part No.:
V35PWM45-M3/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
Single Diodes
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixV35PWM45-M3/I.pdf
Description:
DIODE SCHOTTKY 45V 35A SLIMDPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,795

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

V35PWM45-M3/I from Vishay General Semiconductor is a high-current-density Trench MOS Barrier Schottky (TMBS®) rectifier in SlimDPAK (TO-252AE) package, rated for 45 V reverse voltage and 35 A average forward current, with ultra-low 0.52 V forward voltage at 35 A and 125 °C junction temperature - ideal for low-voltage, high-frequency DC/DC converters in automotive and industrial power supplies.

For engineers reviewing the V35PWM45-M3/I datasheet, V35PWM45-M3/I pinout, V35PWM45-M3/I application, or V35PWM45-M3/I equivalent, key selection criteria include its AEC-Q101-qualified variant availability, MSL Level 1 moisture sensitivity, 1.3 mm profile for space-constrained layouts, and verified thermal resistance of 1.5 °C/W junction-to-mount under infinite heatsink conditions.

Technical Context

This TMBS® rectifier uses trench MOS Schottky technology to achieve lower forward voltage and higher current density than planar Schottky diodes, enabling reduced conduction losses in synchronous rectification and freewheeling paths. Its single-diode configuration and TO-252AE thermal pad support efficient heat transfer to PCB copper.

Designed for operation up to 175 °C junction temperature, it maintains stable VF characteristics across -40 °C to +175 °C ambient range and delivers 4020 pF junction capacitance at 4.0 V/1 MHz - critical for minimizing switching noise in high-frequency buck converters.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM45 V - supports 36 V nominal input rails with 25 % safety margin against transients
IF(AV)35 A - enables high-power 12 V/48 V output stages without parallel devices
VF @ 35 A, 125 °C0.52 V - reduces conduction loss to ≤18.2 W at full load, improving system efficiency
RθJM1.5 °C/W - allows direct thermal coupling to large copper pads for high-power dissipation
IFSM260 A - withstands short-duration inrush and fault currents in DC/DC startup
TJ max.175 °C - compatible with under-hood automotive environments and sealed industrial enclosures
CJ4020 pF @ 4 V - sets soft-switching limits and EMI filter sizing in >500 kHz converters

Pinout & Package

Package: SlimDPAK (TO-252AE) - surface-mount, thermally enhanced case with exposed metal tab (pin 2) for heatsinking; 1.3 mm typical height; halogen-free, RoHS-compliant, JESD201 Class 2 whisker resistant.

Pin/TerminalCircuit RoleDesign Meaning
1 (Anode)Input anode terminalConnects to switching node or input rail; carries full forward current path
2 (Cathode / Heatsink)Cathode output & thermal padPrimary current return path and main thermal interface to PCB copper area
3 (Cathode)Cathode outputSecondary cathode connection; used with pin 2 for low-inductance cathode routing

Key Features

FeatureDesign Value
Ultra-low VF0.33 V at 5 A and 125 °C - cuts forward loss by ≥30 % vs. standard Schottky diodes in same package
Trench MOS BarrierEnables 35 A IF(AV) in SlimDPAK - achieves 2.5× current density vs. planar Schottky equivalents
MSL Level 1Rated for peak reflow at 260 °C - eliminates pre-baking requirement for automated SMT assembly
AEC-Q101 optionHM3 suffix variant qualified for automotive powertrain and body electronics applications
Thermal pad designExposed cathode tab (pin 2) provides 1.5 °C/W RθJM - enables >90 % of junction heat to exit via PCB

Applications

Automotive DC/DC ConvertersIndustrial 48 V Power Distribution

Use Scenario: Step-down conversion from 48 V battery to 12 V subsystem rail in ADAS ECUs and infotainment modules.

IC Role / Device Role / Timing Role: Freewheeling diode in synchronous buck converter operating at 300–600 kHz switching frequency.

Use Value: 0.52 V VF at 35 A/125 °C minimizes conduction loss and thermal stress during continuous high-load operation.

Use Scenario: High-current auxiliary supply in programmable logic controllers (PLCs) and motor drives requiring stable 24 V outputs.

IC Role / Device Role / Timing Role: Output rectifier in isolated forward or half-bridge converter delivering up to 840 W (35 A × 24 V).

Use Value: 175 °C TJ max and 260 A IFSM ensure robustness against surge loads and ambient temperature cycling in factory environments.

Server VRM Polarity ProtectionTelecom DC/DC Modules

Use Scenario: Reverse-polarity protection at 12 V input stage of AI accelerator cards and network switches.

IC Role / Device Role / Timing Role: Low-loss series diode preventing damage from accidental negative input connection.

Use Value: 0.46 V VF at 5 A/25 °C ensures <100 mW power loss during normal operation, avoiding thermal derating.

Use Scenario: Secondary-side rectification in compact 48 V–12 V telecom brick modules with strict height constraints.

IC Role / Device Role / Timing Role: High-efficiency output diode in high-frequency resonant LLC converters.

Use Value: 1.3 mm profile fits within 2.0 mm board stack-up; 4020 pF CJ enables precise snubber tuning for EMI compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
V35PM45-M3/ISame 45 V/35 A rating but planar Schottky; VF = 0.65 V @ 35 A/125 °C - 25 % higher conduction lossLacks AEC-Q101 qualification; not recommended for automotive under-hood useSelect when cost sensitivity outweighs efficiency and qualification requirements
SS3540H40 V/35 A TMBS® rectifier in TO-277; VF = 0.50 V @ 35 A/125 °C; RθJA = 40 °C/W (vs. 55 °C/W for V35PWM45-M3/I)Higher thermal resistance in TO-277 limits power density; no MSL Level 1 ratingPrefer for non-reflow applications or where TO-277 mounting is standardized

Compared with V35PWM45-M3/I, V35PM45-M3/I trades efficiency for lower cost and broader legacy compatibility, while SS3540H offers slightly better VF but inferior thermal management and moisture sensitivity handling - making V35PWM45-M3/I optimal for high-reliability, high-power-density SMT designs requiring automotive-grade robustness.

Availability

V35PWM45-M3/I is available at Aetrix Electronics and suitable for automotive DC/DC converters, industrial 48 V power distribution systems, and telecom DC/DC modules requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for V35PWM45-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and optoelectronics for demanding industrial, automotive, and computing applications.

The V35PWM45-M3/I belongs to Vishay's eSMP® Series of ultra-low-profile surface-mount rectifiers, engineered specifically for high-current, high-efficiency power conversion in space- and thermal-constrained environments.

FAQ

What is the maximum junction temperature rating for the V35PWM45-M3/I?

The V35PWM45-M3/I has a maximum junction temperature (TJ max.) of +175 °C, verified per datasheet revision 12-May-2020. This rating enables reliable operation in under-hood automotive locations and sealed industrial enclosures where ambient temperatures exceed 105 °C. The V35PWM45-M3/I must be mounted on a PCB with adequate copper area to maintain junction temperature below this limit under full load.

Is the V35PWM45-M3/I AEC-Q101 qualified?

No - the V35PWM45-M3/I is not AEC-Q101 qualified. However, the automotive-grade variant V35PWM45HM3/I carries full AEC-Q101 qualification and shares identical electrical and thermal specifications. The "HM3" suffix explicitly denotes AEC-Q101 compliance, while "M3/I" indicates halogen-free, RoHS-compliant packaging in 13″ tape-and-reel format.

What is the thermal resistance from junction to mount (RθJM) for the V35PWM45-M3/I?

The V35PWM45-M3/I has a typical RθJM of 1.5 °C/W when mounted on an infinite heatsink, per datasheet Figure 6 and Thermal Characteristics table. This value reflects direct thermal conduction through the exposed cathode tab (pin 2) to the PCB copper, and is critical for calculating temperature rise in high-power applications where forced airflow is unavailable.

Does the V35PWM45-M3/I meet MSL Level 1 moisture sensitivity requirements?

Yes - the V35PWM45-M3/I meets J-STD-020 MSL Level 1, with a maximum peak reflow temperature of 260 °C. This eliminates the need for baking prior to reflow soldering and supports standard lead-free SMT processes without moisture-related popcorning risk. The device's SlimDPAK molding compound complies with UL 94 V-0 flammability rating.

What is the forward voltage drop of the V35PWM45-M3/I at 35 A and 125 °C?

The V35PWM45-M3/I exhibits a maximum forward voltage drop (VF) of 0.60 V and a typical value of 0.52 V at 35 A and 125 °C, as specified in the Electrical Characteristics table. This ultra-low VF is enabled by Vishay's TMBS® trench MOS barrier technology and directly contributes to reduced conduction losses in high-current DC/DC converter freewheeling paths.

V35PWM45-M3/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Series:
eSMP®, TMBS®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
45 V
Current - Average Rectified (Io):
35A
Voltage - Forward (Vf) (Max) @ If:
670 mV @ 35 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
1.1 mA @ 45 V
Capacitance @ Vr, F:
4020pF @ 4V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SlimDPAK
Operating Temperature - Junction:
-40°C ~ 175°C

V35PWM45-M3/I FAQ

1.How can I place an order for V35PWM45-M3/I through Aetrix?

Please submit a Request for Quotation (RFQ) for V35PWM45-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for V35PWM45-M3/I reliable?

The price and inventory of V35PWM45-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for V35PWM45-M3/I is usually 5 days.

3.What payment methods are accepted for V35PWM45-M3/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for V35PWM45-M3/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for V35PWM45-M3/I?

V35PWM45-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your V35PWM45-M3/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for V35PWM45-M3/I?

For technical support, including V35PWM45-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your V35PWM45-M3/I requirements.

6.How does Aetrix verify that V35PWM45-M3/I is sourced from the original manufacturer or authorized distributors?

All V35PWM45-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that V35PWM45-M3/I meets industry standards.

7.What is the process for return or replacement of V35PWM45-M3/I?

All V35PWM45-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with V35PWM45-M3/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The V35PWM45-M3/I part is unused and in its original packaging.

Return procedure for V35PWM45-M3/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

V35PWM45-M3/I Tags

  • V35PWM45-M3/I
  • V35PWM45-M3/I PDF
  • V35PWM45-M3/I Datasheet
  • V35PWM45-M3/I Specifications
  • V35PWM45-M3/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division V35PWM45-M3/I
  • Buy V35PWM45-M3/I
  • V35PWM45-M3/I Price
  • V35PWM45-M3/I Distributor
  • V35PWM45-M3/I Supplier
  • V35PWM45-M3/I Wholesale
Related Products
1N4448X-TP
1N4448X-TP

Micro Commercial Co

1N4148WX-TP
1N4148WX-TP

Micro Commercial Co

1N4148TR
1N4148TR

onsemi

MMSD4148T1G
MMSD4148T1G

onsemi

MMBD914LT3G
MMBD914LT3G

onsemi

BAS16HT1G
BAS16HT1G

onsemi

1N914BWT
1N914BWT

onsemi

BAS21LT1G
BAS21LT1G

onsemi

LL4148
LL4148

onsemi

BAS16LT1G
BAS16LT1G

onsemi

MMSD914T1G
MMSD914T1G

onsemi

BAV21W-7-F
BAV21W-7-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER