Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division V3PM6-M3/I

Part No.:
V3PM6-M3/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
Single Diodes
Package:
DO-220AA
Datasheet:
AetrixV3PM6-M3/I.pdf
Description:
DIODE SCHOTTKY 60V 2.4A DO220AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:18,932

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

V3PM6-M3/I from Vishay General Semiconductor is a surface-mount Trench MOS Barrier Schottky (TMBS®) rectifier in SMP (DO-220AA) package, rated for 60 V repetitive peak reverse voltage, 3.0 A average forward current, and 80 A non-repetitive surge current, with 0.47 V forward voltage at 3.0 A and 175 °C maximum junction temperature - used in DC/DC converters and polarity protection circuits.

For engineers reviewing the V3PM6-M3/I datasheet, V3PM6-M3/I pinout, V3PM6-M3/I application, or V3PM6-M3/I equivalent, key selection criteria include low VF (0.47 V @ 3 A), high TJ max (175 °C), MSL Level 1 rating, halogen-free RoHS-compliant construction, and SMP package thermal performance (RθJA = 125 °C/W, RθJM = 15 °C/W).

Technical Context

The V3PM6-M3/I implements trench MOS Schottky technology to achieve lower forward voltage and higher efficiency than planar Schottky or standard PN rectifiers. Its single-diode configuration supports unidirectional conduction in low-voltage, high-frequency switching paths.

Designed for automotive-grade reliability when ordered as HM3 variant, the V3PM6-M3/I commercial version maintains identical electrical specs but excludes AEC-Q101 qualification. Thermal performance is defined for both free-air (RθJA) and mounted-on-copper-pad (RθJM) conditions per JEDEC standards.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM60 V - blocks up to 60 V reverse voltage without breakdown in DC/DC converter output stages
IF(AV)3.0 A - continuous forward current capability at 25 °C ambient on 10 mm × 10 mm copper pad
VF @ 3 A0.47 V - reduces conduction loss to ~1.4 W at full load, improving system efficiency
IFSM80 A - withstands short-duration inrush or fault currents in power supply input/freewheeling paths
TJ max175 °C - enables operation in under-hood or high-ambient industrial environments
RθJA125 °C/W - defines thermal limit for PCB layout with minimal copper; requires heatsinking above ~1.2 W dissipation
CJ400 pF @ 4 V - limits high-frequency switching noise and EMI in >100 kHz DC/DC topologies

Pinout & Package

Package: SMP (DO-220AA), low-profile surface-mount case with matte tin-plated leads, UL 94 V-0 molding compound, cathode indicated by color band.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry pointConnected to input/source side of rectification path; must handle full IF(AV) and IFSM
CathodeForward current exit pointMarked with color band; connects to output/load side and serves as thermal mounting surface

Key Features

FeatureDesign Value
Trench MOS Schottky technologyEnables 0.47 V VF at 3 A - 15–25 % lower than comparable planar Schottky diodes, reducing conduction loss
MSL Level 1 ratingAllows unlimited floor life and reflow at 260 °C peak - eliminates baking requirements before SMT assembly
Halogen-free, RoHS-compliantMeets IPC-1752A material declaration requirements for environmental compliance in global electronics manufacturing
Junction-to-mount thermal resistanceRθJM = 15 °C/W - enables effective heat transfer to PCB copper when mounted on 10 mm × 10 mm pad area
Low profile (max height 0.80 mm)Supports ultra-thin power modules and space-constrained portable electronics designs

Applications

DC/DC ConvertersPolarity Protection

Use Scenario: Output rectification in synchronous or asynchronous buck converters operating at 100–500 kHz.

IC Role / Device Role / Timing Role: Freewheeling diode providing low-loss return path during high-side switch off-time.

Use Value: 0.47 V VF minimizes power loss and thermal rise, enabling higher efficiency (>92 %) at 3 A load.

Use Scenario: Reverse-voltage blocking in USB-C, PoE, or battery-powered equipment inputs.

IC Role / Device Role / Timing Role: Unidirectional current gate preventing damage from misconnected power sources.

Use Value: 60 V VRRM and 175 °C TJ max ensure robustness against transient reversals and ambient heating.

Freewheeling DiodesLow-Voltage Inverters

Use Scenario: Inductive load flyback suppression in motor drivers and solenoid controllers.

IC Role / Device Role / Timing Role: Clamp diode absorbing stored energy during switch turn-off.

Use Value: 80 A IFSM handles peak inductive kick without degradation; fast recovery avoids oscillation.

Use Scenario: Half-bridge leg commutation in 12–48 V solar microinverters or UPS systems.

IC Role / Device Role / Timing Role: High-frequency output rectifier managing bidirectional switching losses.

Use Value: 400 pF CJ and low VF reduce switching node ringing and EMI generation at 200+ kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
VSSAF360-M3/5BSame 60 V VRRM, 3 A IF(AV), but VF = 0.52 V @ 3 A; DO-214AC (SMA) package, larger footprint and higher RθJA (160 °C/W)Less suitable for ultra-thin or thermally dense layouts due to SMA size and thermal resistanceSelect VSSAF360-M3/5B only if legacy SMA footprint compatibility is required
SB360-E3/52T60 V VRRM, 3 A IF(AV), VF = 0.72 V @ 3 A; DO-201AD package, through-hole, no MSL ratingNot suitable for automated SMT lines; higher VF increases conduction loss by ~0.75 W at 3 AChoose SB360-E3/52T only for prototyping or through-hole legacy designs where reflow compatibility is irrelevant

Compared with VSSAF360-M3/5B and SB360-E3/52T, the V3PM6-M3/I delivers superior thermal performance (RθJM = 15 °C/W), lowest VF (0.47 V), and MSL Level 1 reflow readiness - making it optimal for high-density, high-efficiency SMT power stages.

Availability

V3PM6-M3/I is available at Aetrix Electronics and suitable for DC/DC converters, polarity protection circuits, and freewheeling diode applications requiring stable component supply, consistent halogen-free RoHS compliance, and MSL Level 1 assembly readiness.

Supply support for V3PM6-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on power efficiency and reliability.

The V3PM6-M3/I belongs to Vishay's eSMP® Series of TMBS® rectifiers, engineered specifically for high-frequency, low-loss power conversion in space-constrained and thermally demanding applications.

FAQ

What is the maximum junction temperature rating for the V3PM6-M3/I?

The V3PM6-M3/I has a maximum junction temperature (TJ max) of +175 °C, enabling reliable operation in high-ambient environments such as automotive under-hood or industrial control enclosures. This rating is validated per JEDEC test conditions and supports long-term reliability when thermal design respects RθJA = 125 °C/W and RθJM = 15 °C/W limits. The V3PM6-M3/I must not exceed this TJ max during steady-state or transient operation.

Does the V3PM6-M3/I have AEC-Q101 qualification?

No, the V3PM6-M3/I is the commercial-grade variant with halogen-free RoHS compliance and MSL Level 1 rating, but it is not AEC-Q101 qualified. For automotive applications requiring AEC-Q101, the equivalent part is V3PM6HM3/I - which shares identical electrical specifications and package but adds stress-test validation per AEC-Q101. The V3PM6-M3/I remains suitable for industrial and consumer power supplies where automotive qualification is not mandated.

What does the "M3" suffix indicate in V3PM6-M3/I?

"M3" denotes Vishay's halogen-free, RoHS-compliant, commercial-grade product variant with JESD 201 Class 2 whisker resistance and matte tin-plated leads solderable per J-STD-002. It distinguishes the part from non-RoHS or automotive (HM3) versions. The "I" suffix specifies 13-inch tape-and-reel packaging with 10,000 units per reel - critical for high-volume SMT line feeding. The V3PM6-M3/I thus combines environmental compliance, assembly readiness, and logistics scalability.

How does the V3PM6-M3/I compare to standard Schottky diodes in forward voltage?

The V3PM6-M3/I achieves 0.47 V forward voltage at 3.0 A and 25 °C - approximately 15–25 % lower than conventional planar Schottky diodes rated for similar current and voltage. This reduction stems from its trench MOS barrier structure, which lowers series resistance and barrier height. As a result, the V3PM6-M3/I dissipates ~1.4 W at full load versus ~1.7–1.8 W for typical alternatives, directly improving thermal margin and system efficiency in DC/DC converters.

What is the thermal resistance from junction to ambient (RθJA) for the V3PM6-M3/I?

The V3PM6-M3/I has a typical junction-to-ambient thermal resistance (RθJA) of 125 °C/W when mounted on a 10 mm × 10 mm copper pad per JEDEC standards. This value assumes free-air convection and defines the upper thermal limit for passive cooling: at 1.0 W dissipation, junction temperature rises ~125 °C above ambient. For higher power, designers must use the lower RθJM = 15 °C/W value with proper PCB copper area to maintain safe TJ ≤ 175 °C. The V3PM6-M3/I's RθJA is among the best in the SMP package class.

V3PM6-M3/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Series:
eSMP®, TMBS®
Package/Case:
DO-220AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
60 V
Current - Average Rectified (Io):
2.4A
Voltage - Forward (Vf) (Max) @ If:
500 mV @ 1.5 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
200 µA @ 60 V
Capacitance @ Vr, F:
400pF @ 4V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-220AA (SMP)
Operating Temperature - Junction:
-40°C ~ 175°C

V3PM6-M3/I FAQ

1.How can I place an order for V3PM6-M3/I through Aetrix?

Please submit a Request for Quotation (RFQ) for V3PM6-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for V3PM6-M3/I reliable?

The price and inventory of V3PM6-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for V3PM6-M3/I is usually 5 days.

3.What payment methods are accepted for V3PM6-M3/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for V3PM6-M3/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for V3PM6-M3/I?

V3PM6-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your V3PM6-M3/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for V3PM6-M3/I?

For technical support, including V3PM6-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your V3PM6-M3/I requirements.

6.How does Aetrix verify that V3PM6-M3/I is sourced from the original manufacturer or authorized distributors?

All V3PM6-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that V3PM6-M3/I meets industry standards.

7.What is the process for return or replacement of V3PM6-M3/I?

All V3PM6-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with V3PM6-M3/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The V3PM6-M3/I part is unused and in its original packaging.

Return procedure for V3PM6-M3/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

V3PM6-M3/I Tags

  • V3PM6-M3/I
  • V3PM6-M3/I PDF
  • V3PM6-M3/I Datasheet
  • V3PM6-M3/I Specifications
  • V3PM6-M3/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division V3PM6-M3/I
  • Buy V3PM6-M3/I
  • V3PM6-M3/I Price
  • V3PM6-M3/I Distributor
  • V3PM6-M3/I Supplier
  • V3PM6-M3/I Wholesale
Related Products
1N4448X-TP
1N4448X-TP

Micro Commercial Co

1N4148WX-TP
1N4148WX-TP

Micro Commercial Co

1N4148TR
1N4148TR

onsemi

MMSD4148T1G
MMSD4148T1G

onsemi

MMBD914LT3G
MMBD914LT3G

onsemi

BAS16HT1G
BAS16HT1G

onsemi

1N914BWT
1N914BWT

onsemi

BAS21LT1G
BAS21LT1G

onsemi

LL4148
LL4148

onsemi

BAS16LT1G
BAS16LT1G

onsemi

MMSD914T1G
MMSD914T1G

onsemi

BAV21W-7-F
BAV21W-7-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER