My Inquiry
My Account
Texas Instruments V62/22603-01XE
- Part No.:
- V62/22603-01XE
- Manufacturer:
- Texas Instruments
- Category:
- Instrumentation, Op Amps, Buffer Amps
- Package:
- 24-WFQFN Exposed Pad
- Datasheet:
-
V62/22603-01XE.pdf
- Description:
- ENHANCED PRODUCT DUAL-CHANNEL
- Quantity:
- Payment:
- Shipping:
Inventory:1,602
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
OPA3S2859-EP from Texas Instruments is a dual-channel, radiation-hardened, programmable-gain transimpedance amplifier (TIA) optimized for photodiode-based high-speed optical sensing. It delivers 900-MHz gain-bandwidth product, 2.2-nV/√Hz input voltage noise, and 350-V/μs slew rate across –55 °C to +125 °C, enabling precision laser distance measurement and OTDR front ends.
For engineers reviewing the OPA3S2859-EP datasheet, OPA3S2859-EP pinout, OPA3S2859-EP application, or OPA3S2859-EP equivalent, key selection criteria include transimpedance bandwidth vs. feedback resistor selection (1 kΩ/10 kΩ/100 kΩ), latch-controlled gain stability, dual-channel crosstalk (<–70 dB), and extended-temperature quiescent current (44–63 mA at 5 V).
Technical Context
The OPA3S2859-EP implements two independent, CMOS-input TIA channels with three internal switched feedback paths per channel-each optimized for distinct gain ranges (<1 kΩ, 10–100 kΩ, >100 kΩ)-plus an external non-switched path for custom gain. Switch control uses a 2-wire parallel interface (SEL0/SEL1) with per-channel latch pins (LTCH_A/LTCH_B) to freeze gain configuration during operation.
Each channel integrates matched COM and FB switches with on-resistances of 80 Ω (COM0), 38 Ω (FB0), 125 Ω (COM1), 37 Ω (FB1), 375 Ω (COM2), and 35 Ω (FB2), minimizing parasitic capacitance (CCOMx ≤1.3 pF, CFBx ≤1.9 pF) and enabling stable closed-loop bandwidths up to 130 MHz (1 kΩ gain, 4 pF photodiode capacitance).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Gain-bandwidth product | 900 MHz - enables high closed-loop bandwidth in low-capacitance photodiode applications (e.g., 130 MHz at 1 kΩ gain) |
| Input voltage noise | 2.2 nV/√Hz at 1 MHz - supports detection of weak optical signals without amplifying thermal noise floor |
| Slew rate | 350 V/μs - ensures faithful reproduction of fast optical pulses (e.g., sub-ns laser returns) |
| Supply voltage range | 3.3 V to 5.25 V - compatible with standard industrial and aerospace power rails; supports ±2.5 V split supply |
| Operating temperature | –55 °C to +125 °C - qualified for defense, aerospace, and downhole instrumentation environments |
| Quiescent current | 44–63 mA (both channels, 5 V) - balances performance and power in thermally constrained systems |
| Power-down current | 75–170 μA - reduces system standby power while preserving latch state and bias integrity |
Pinout & Package
OPA3S2859-EP is housed in a 24-pin WQFN package (4.00 mm × 4.00 mm) with exposed thermal pad connected to VS−. The layout supports dual independent TIAs with dedicated feedback and photodiode input terminals per channel, plus shared logic control and power pins.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| COM_A / COM_B | Photodiode cathode connection (Channel A/B) | Low-impedance, low-capacitance input node for reverse-biased photodiodes; referenced to virtual ground |
| FB_A0–FB_A2 / FB_B0–FB_B2 | Switched feedback resistor connections | Three per-channel paths optimized for <1 kΩ, 10–100 kΩ, and >100 kΩ gains; minimize switch-induced parasitics |
| INA+/INB+, INA−/INB− | Differential amplifier inputs | FET-input stage with 1.4 pF (non-inverting) and 3 pF (inverting) input capacitance; enables stable transimpedance loop design |
| LTCH_A / LTCH_B | Per-channel gain latch enable | Logic-low assertion freezes selected gain configuration; prevents unintended switching during SEL0/SEL1 transitions |
| SEL0 / SEL1 | 2-bit gain select interface | Parallel binary control (Table 5-2) selecting among four gain modes: low/mid/high internal or external (all switches open) |
| PD | Global power-down control | Active-low signal disables both amplifiers, reducing IQ to ≤170 μA while retaining latch state and bias references |
| VOUT_A / VOUT_B | Amplifier output nodes | Capable of driving 200 Ω loads with 350 V/μs slew; output impedance ≤0.02 Ω at 1 MHz supports low-loss signal routing |
| VS+ / VS− | Power supply rails | VS+ pins (14,16,17) and VS− pins (13,18) provide low-inductance, multi-point supply entry; thermal pad must connect to VS− |
Key Features
| Feature | Design Value |
|---|---|
| Programmable gain via integrated switches | Eliminates external multiplexers and PCB trace parasitics; supports rapid gain reconfiguration without signal path discontinuity |
| Per-channel latch control (LTCH_A/LTCH_B) | Enables asynchronous gain hold-critical for synchronized multi-channel OTDR sampling where timing jitter must be minimized |
| Matched dual-channel architecture | ≤10 mV offset mismatch and –70 dB crosstalk support differential optical measurements and common-mode rejection in SiPM arrays |
| Enhanced Product (EP) qualification | Controlled baseline, single fab/test site, extended lifecycle, and full traceability meet MIL-PRF-38535 Class V and space-grade reliability requirements |
| Low-noise FET input stage | 2.2 nV/√Hz voltage noise + 50 pA typical input bias current enables high dynamic range (>100 dB) in low-light photomultiplier post-amplification |
Applications
| Laser Distance Measurement | Optical Time Domain Reflectometry (OTDR) |
|---|---|
|
Use Scenario: Precise time-of-flight calculation using pulsed laser diodes and fast photodiode receivers in rangefinders and LIDAR subsystems. IC Role / Device Role / Timing Role: Dual-channel TIA converts nanosecond-scale photocurrent pulses into clean voltage waveforms for high-resolution time-stamping. Use Value: 130-MHz small-signal bandwidth at 1-kΩ gain enables sub-centimeter resolution; latch mode stabilizes gain during pulse acquisition windows. |
Use Scenario: Distributed fiber-optic fault detection by analyzing backscattered light amplitude vs. distance in telecom and sensing fibers. IC Role / Device Role / Timing Role: High-linearity, low-noise TIA front end captures weak Rayleigh backscatter over 100+ km spans with minimal added noise. Use Value: 2.2-nV/√Hz input noise and 14-MHz bandwidth at 100-kΩ gain maximize signal-to-noise ratio for long-range event detection. |
| Silicon Photomultiplier (SiPM) Buffer | Photomultiplier Tube (PMT) Post Amplifier |
|
Use Scenario: Readout of fast, low-charge-output SiPM arrays used in medical PET scanners and radiation detectors. IC Role / Device Role / Timing Role: Low-input-capacitance TIA (CIN− = 3 pF) preserves SiPM rise time while providing programmable gain to accommodate varying pixel counts. Use Value: Matched channel offset (<10 mV) and crosstalk (<–70 dB) enable accurate coincidence timing between adjacent detector elements. |
Use Scenario: Amplification of microampere-level PMT anode currents in spectroscopy, particle physics, and nuclear instrumentation. IC Role / Device Role / Timing Role: Wideband, high-slew-rate amplifier conditions PMT output for ADC digitization without pulse distortion. Use Value: 350-V/μs slew rate and 900-MHz GBWP preserve sub-nanosecond pulse fidelity; –55 °C to +125 °C rating supports cryogenic and high-temp enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transimpedance amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| OPA657IDBVR | Single-channel, 1.6-GHz GBWP, 4.8-nV/√Hz noise, no integrated switches or latch; requires external multiplexer | Higher bandwidth but lacks programmable gain and dual-channel integration; suited for ultra-high-speed single-path systems | Select when maximum small-signal bandwidth (>1 GHz) is prioritized over gain flexibility and channel count |
| LMH6629MA/NOPB | Single-channel, 1.5-GHz GBWP, 1.9-nV/√Hz noise, no gain switching; optimized for voltage amplification, not TIA topology | Requires external feedback network and photodiode biasing circuitry; not qualified for extended temperature or EP reliability | Select only for non-radiation-hardened, commercial-temperature voltage-gain applications requiring lowest noise |
Compared with OPA657IDBVR and LMH6629MA/NOPB, the OPA3S2859-EP uniquely combines dual-channel integration, on-chip programmable gain switching, latch control, and military-grade temperature/radiation tolerance-making it the only qualified solution for compact, reliable, high-performance optical front ends in defense and space systems.
Availability
OPA3S2859-EP is available at Aetrix Electronics and suitable for laser rangefinding, fiber-optic test equipment, radiation-hardened medical imaging, and aerospace telemetry systems requiring stable component supply across extended temperature and long product lifecycles.
Supply support for OPA3S2859-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with deep expertise in high-speed amplifiers and space-grade components.
The OPA3S2859-EP belongs to TI's Enhanced Product (EP) amplifier portfolio, engineered specifically for mission-critical defense, aerospace, and medical applications demanding extended temperature operation, controlled manufacturing, and full traceability.
FAQ
What is the maximum small-signal transimpedance bandwidth achievable with the OPA3S2859-EP?
The OPA3S2859-EP achieves up to 130 MHz small-signal transimpedance bandwidth when configured with 1-kΩ feedback resistance and 4-pF total input capacitance (photodiode + PCB). Bandwidth decreases to 40 MHz at 10-kΩ gain and 14 MHz at 100-kΩ gain under identical conditions, as specified in Section 6.5 of the datasheet.
How does the latch function (LTCH_A/LTCH_B) operate in the OPA3S2859-EP?
In the OPA3S2859-EP, LTCH_A and LTCH_B are independent per-channel control inputs: logic low holds the currently selected gain configuration (determined by SEL0/SEL1), preventing further changes until latched high again. This ensures gain stability during critical acquisition windows in OTDR or time-of-flight systems.
Can the OPA3S2859-EP be used with split supplies such as ±2.5 V?
Yes, the OPA3S2859-EP supports split-supply operation including ±2.5 V (total 5 V), as confirmed in Section 6.7 Typical Characteristics and Figure 6-1 through 6-15. All electrical specifications-including noise, bandwidth, and slew rate-are validated under ±2.5 V conditions, and the thermal pad must be connected to the most negative rail (–2.5 V).
What is the power-down behavior of the OPA3S2859-EP, and how quickly does it recover?
When PD is driven low, the OPA3S2859-EP enters power-down mode drawing ≤170 μA total quiescent current. Output is disabled, but internal bias and latch states are retained. Turn-on delay is 90 ns to reach 90% of final output value; turn-off delay is 330 ns to decay to 10%, as measured in Section 6.5.
Does the OPA3S2859-EP support external feedback networks in addition to its internal switched paths?
Yes-the OPA3S2859-EP supports an "External Gain" mode (SEL1=HIGH, SEL0=HIGH) where all internal switches open, allowing designers to implement custom feedback topologies-including active filters, gain-setting resistors outside the IC, or compensation networks-without interference from internal switch parasitics.
V62/22603-01XE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 24-WFQFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Amplifier Type:
- Transimpedance
- Number of Circuits:
- 2
- Output Type:
- Single Ended, Rail-to-Rail
- Slew Rate:
- 350V/µs
- Gain Bandwidth Product:
- 900 MHz
- -3db Bandwidth:
- 14 MHz
- Current - Input Bias:
- 50 pA
- Voltage - Input Offset:
- 900 µV
- Current - Supply:
- 44mA
- Current - Output / Channel:
- 74 mA
- Voltage - Supply Span (Min):
- 3.3 V
- Voltage - Supply Span (Max):
- 5.25 V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-WQFN (4x4)
V62/22603-01XE FAQ
1.How can I place an order for V62/22603-01XE through Aetrix?
Please submit a Request for Quotation (RFQ) for V62/22603-01XE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for V62/22603-01XE reliable?
The price and inventory of V62/22603-01XE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for V62/22603-01XE is usually 5 days.
3.What payment methods are accepted for V62/22603-01XE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for V62/22603-01XE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for V62/22603-01XE?
V62/22603-01XE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your V62/22603-01XE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for V62/22603-01XE?
For technical support, including V62/22603-01XE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your V62/22603-01XE requirements.
6.How does Aetrix verify that V62/22603-01XE is sourced from the original manufacturer or authorized distributors?
All V62/22603-01XE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that V62/22603-01XE meets industry standards.
7.What is the process for return or replacement of V62/22603-01XE?
All V62/22603-01XE units undergo pre-shipment inspection (PSI). If there is an issue with V62/22603-01XE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The V62/22603-01XE part is unused and in its original packaging.
Return procedure for V62/22603-01XE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
V62/22603-01XE Tags
-
LM358DT
STMicroelectronics
-
LM358DR
Texas Instruments
-
LM2904DR
Texas Instruments
-
LM358ADR
Texas Instruments
-
LM2904DGKR
Texas Instruments
-
LM324DR
Texas Instruments
-
MCP6006T-E/OT
Microchip Technology
-
MCP6006UT-E/OT
Microchip Technology
-
LM324PWR
Texas Instruments
-
LM2902PWR
Texas Instruments
-
LM2902DR
Texas Instruments
-
LM358P
Texas Instruments
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
