Vishay General Semiconductor - Diodes Division V80100P-E3/45

Overview

V80100P-E3/45 from Vishay General Semiconductor is a dual high-voltage trench MOS barrier Schottky rectifier in TO-247AD package, rated for 100 V repetitive reverse voltage and 80 A average forward current per device (40 A per diode), with ultra-low 0.425 V forward voltage at 10 A and 125 °C junction temperature-used in high-efficiency DC-DC converters and OR-ing circuits.

For engineers reviewing the V80100P-E3/45 datasheet, V80100P-E3/45 pinout, V80100P-E3/45 application, or V80100P-E3/45 equivalent, key selection criteria include its dual-diode configuration, 1.5 °C/W thermal resistance per diode, 500 A surge rating, RoHS-compliant matte tin plating, and JESD201 Class 1A whisker-tested consumer-grade construction.

Technical Context

This dual Schottky rectifier employs trench MOS technology to achieve lower VF and higher efficiency than planar Schottky or fast recovery diodes. Its 100 V VRRM and 150 °C max junction temperature support operation in high-power industrial SMPS and battery protection systems where thermal management and low conduction loss are critical.

The device features isolated anode-cathode terminals per diode (Pin 1–Case–Pin 2 and Pin 2–Case–Pin 3), enabling independent use of each diode in freewheeling or OR-ing topologies. Its 10,000 V/µs dV/dt rating ensures robustness against fast transient switching noise in high-frequency inverters.

Key Specifications

Pinout & Package

Package: TO-247AD (TO-3P), 3-terminal single-in-line outline with isolated diode pairs sharing the case as common cathode or anode depending on connection. Matte tin-plated leads; UL 94V-0 epoxy; 10 in-lb max mounting torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual high-voltage Schottky rectifier applications.

Compared with V80100C-E3/45 and STPS80H100CG-TR, the V80100P-E3/45 uniquely delivers dual 40 A paths in one TO-247AD package with best-in-class 0.425 V VF and 1.5 °C/W thermal resistance-enabling compact, high-efficiency OR-ing and DC-DC designs where space and thermal headroom are constrained.

Availability

V80100P-E3/45 is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, OR-ing diode networks, and reverse battery protection requiring stable component supply and traceable manufacturing compliance.

Supply support for V80100P-E3/45 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on power efficiency and reliability.

The V80100P-E3/45 belongs to Vishay's TMBS® (Trench MOS Barrier Schottky) product line, engineered specifically for high-current, high-efficiency power conversion in industrial SMPS, telecom infrastructure, and automotive auxiliary systems.

FAQ

What is the maximum average forward current rating for V80100P-E3/45 per diode?

The V80100P-E3/45 is rated for 40 A average forward current per diode at TA = 25 °C with appropriate heatsinking, as confirmed in the "Maximum Ratings" table of Vishay document 88979. This is derived from the 80 A per-device rating split across its two independent Schottky junctions, and must be thermally limited using the 1.5 °C/W RθJC value and 150 °C TJ max specification.

Does V80100P-E3/45 support surface-mount assembly or only through-hole mounting?

V80100P-E3/45 uses the TO-247AD (TO-3P) package, which is a through-hole outline with three leads designed for bolt-down or press-fit mounting to a heatsink. It is not a surface-mount device; the datasheet specifies a maximum mounting torque of 10 in-lbs and requires mechanical attachment-not reflow soldering-to ensure thermal and electrical integrity.

Is the case (Pin 2) of V80100P-E3/45 electrically isolated or internally connected?

In the V80100P-E3/45, Pin 2 is the common cathode terminal and is electrically connected to the metal case. The device's internal structure ties both diode cathodes to the case, making Pin 2 and the case the same node. Therefore, the case must be treated as an active circuit node-not a ground reference-unless explicitly isolated via insulating hardware.

What does the "E3/45" suffix indicate in V80100P-E3/45?

The "E3" suffix denotes Vishay's consumer-grade qualification, including compliance with JESD201 Class 1A whisker testing, while "/45" specifies the preferred packaging code: 30 units per tube. This matches the ordering information table in document 88979 and confirms the part is supplied in tube format with matte tin-plated leads meeting J-STD-002 solderability standards.

Can V80100P-E3/45 replace standard silicon fast recovery diodes in 100 kHz switch-mode supplies?

Yes, the V80100P-E3/45 can replace silicon fast recovery diodes in 100 kHz switch-mode supplies due to its zero reverse recovery charge (Qrr ≈ 0), eliminating switching losses and EMI associated with minority-carrier devices. Its 0.425 V VF at 10 A/125 °C and 10,000 V/µs dV/dt rating make it especially effective in reducing conduction loss and improving light-load efficiency over conventional FRDs.