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Vishay General Semiconductor - Diodes Division VB20150C-E3/4W
- Part No.:
- VB20150C-E3/4W
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Diode Arrays
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
VB20150C-E3/4W.pdf
- Description:
- DIODE ARR SCHOT 150V 10A TO263AB
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
VB20150C-E3/4W from Vishay General Semiconductor is a dual high-voltage trench MOS barrier Schottky rectifier in D2PAK (TO-263AB) package, configured as common cathode with 150 V reverse voltage rating, 10 A average forward current per diode, and ultra-low 0.69 V forward voltage at 10 A - enabling high-efficiency DC/DC conversion in space-constrained power supplies.
For engineers reviewing the VB20150C-E3/4W datasheet, VB20150C-E3/4W pinout, VB20150C-E3/4W application, or VB20150C-E3/4W equivalent, key selection criteria include thermal resistance (2.8 °C/W junction-to-case), low VF at elevated temperature (0.69 V @ 125 °C), dual-diode common-cathode topology, and RoHS-compliant matte tin plating for reliable solderability.
Technical Context
This device implements trench MOS Schottky technology to achieve lower forward voltage and higher efficiency than planar Schottky or fast recovery diodes. Its dual common-cathode configuration supports interleaved or parallel output paths in synchronous rectification and OR-ing applications.
Rated for 150 °C maximum junction temperature and 120 A non-repetitive surge current, it sustains operation under transient load conditions typical in server PSUs and telecom power systems. The D2PAK package provides enhanced thermal performance over TO-220 while maintaining surface-mount compatibility.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 150 V - blocks up to 150 V reverse voltage without breakdown, suitable for 48 V input bus systems with margin. |
| IF(AV) per diode | 10 A - delivers 10 A continuous DC current per diode at TA = 25 °C with heatsink; derates to ~7 A at 100 °C ambient. |
| VF @ 10 A, 125 °C | 0.69 V - enables <1.4 W conduction loss per diode at full load and high temperature, reducing thermal stress. |
| RθJC | 2.8 °C/W - allows direct heatsink mounting to maintain TJ ≤ 150 °C with ≤ 4 W total dissipation per diode. |
| IFSM | 120 A - withstands short-duration inrush or fault currents in DC/DC converters without failure. |
| IR @ 150 V, 125 °C | 15 mA - low leakage preserves efficiency in high-temperature reverse-biased freewheeling or OR-ing roles. |
| EAS | 70 mJ - absorbs single-event avalanche energy during switching transients, improving ruggedness in hard-switched topologies. |
Pinout & Package
D2PAK (TO-263AB) thermally enhanced surface-mount package with isolated copper tab (pin 3 = cathode K), matte tin-plated leads, UL 94 V-0 molding compound, and MSL Level 1 rating (245 °C peak reflow).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode 1 (A1) | Input terminal for first Schottky diode; connects to high-side switch node in synchronous buck or flyback secondary. |
| Pin 2 | Anode 2 (A2) | Input terminal for second Schottky diode; enables dual-output or phase-interleaved rectification. |
| Pin 3 (Tab) | Common Cathode (K) | Electrically and thermally connected to internal cathode nodes; must be soldered to PCB copper pour for thermal and electrical return path. |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOS Schottky architecture | Reduces VF by ~15 % vs. planar Schottky at 10 A, directly lowering conduction losses in high-current DC/DC stages. |
| Common-cathode dual-diode configuration | Enables compact dual-output rectification or OR-ing without external interconnects - saves board area and parasitic inductance. |
| 2.8 °C/W RθJC (junction-to-case) | Supports >90 % of rated current in D2PAK without external heatsink when mounted on ≥2 oz Cu 1-in² pad. |
| RoHS-compliant, matte tin plating | Ensures reliable wetting and joint integrity during lead-free reflow (260 °C peak), meeting J-STD-002B solderability requirements. |
| 150 °C maximum junction temperature | Permits operation in sealed enclosures or high-ambient environments (e.g., industrial motor drives) without derating penalties. |
Applications
| Server DC/DC Converters | Telecom Power Supplies |
|---|---|
|
Use Scenario: Secondary-side synchronous rectification in 48 V–12 V or 48 V–5 V isolated DC/DC modules delivering up to 100 A. IC Role / Device Role / Timing Role: Dual Schottky rectifier replacing two discrete devices; common cathode simplifies layout and reduces trace inductance. Use Value: 0.69 V VF at 10 A and 125 °C lowers total conduction loss by ~1.2 W per diode versus legacy 0.85 V parts, improving system efficiency by 0.4–0.6 %. |
Use Scenario: OR-ing diode pair in redundant 48 V input distribution for base station power shelves. IC Role / Device Role / Timing Role: Back-to-back configured common-cathode diodes provide reverse-polarity protection and seamless source switchover. Use Value: Low 15 mA IR at 150 V and 125 °C minimizes standby power loss across hot-swap controllers, extending hold-up time. |
| Industrial Motor Drives | Automotive DC/DC Modules |
|
Use Scenario: Freewheeling path for IGBT gate drivers and auxiliary power rails in variable-frequency drives operating up to 85 °C ambient. IC Role / Device Role / Timing Role: High-dV/dt (10 kV/μs) capability prevents false turn-on during fast-switching IGBT transitions. Use Value: 120 A IFSM rating handles repetitive inductive kickback surges without degradation, supporting >10-year field life. |
Use Scenario: Reverse battery protection and 12 V–5 V/3.3 V step-down rectification in automotive infotainment power management units. IC Role / Device Role / Timing Role: Dual-diode structure replaces two discrete SMD Schottkys, reducing BOM count and assembly cost. Use Value: AEC-Q101 not claimed, but 150 °C TJ rating and robust EAS (70 mJ) support extended temperature qualification per OEM requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-voltage Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| VF20150C-E3/4W | Same die, ITO-220AB package with insulated tab (1500 V isolation); RθJC = 5.0 °C/W; heavier (1.75 g). | Required where electrical isolation between heatsink and circuit ground is mandatory (e.g., floating secondary rails). | Select VF20150C-E3/4W when isolation >1 kV is needed; VB20150C-E3/4W preferred for thermal performance in non-isolated layouts. |
| VI20150C-E3/4W | Same die, TO-262AA package; identical RθJC (2.8 °C/W); no heatsink mounting hole; lighter (1.45 g). | Suitable for through-hole assembly or mixed-technology boards where D2PAK reflow is unavailable. | Choose VI20150C-E3/4W for legacy THM production lines; VB20150C-E3/4W offers superior thermal reliability in high-density SMT designs. |
Compared with VF20150C-E3/4W and VI20150C-E3/4W, VB20150C-E3/4W delivers optimal thermal resistance (2.8 °C/W) in a surface-mount footprint, making it the preferred choice for high-power density DC/DC converters where heatsink attachment and minimal board area are critical.
Availability
VB20150C-E3/4W is available at Aetrix Electronics and suitable for server DC/DC converters, telecom power supplies, and industrial motor drives requiring stable component supply, long-lifecycle support, and consistent parametric performance across production lots.
Supply support for VB20150C-E3/4W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Intertechnology is a global semiconductor manufacturer specializing in discrete components, passive elements, and sensors, with leadership in power rectification, precision resistors, and optoelectronics.
The VB20150C-E3/4W belongs to Vishay's TMBS® (Trench MOS Barrier Schottky) product line, engineered specifically for high-efficiency, high-current power conversion in computing, communications, and industrial systems.
FAQ
What is the maximum junction temperature rating for VB20150C-E3/4W?
The VB20150C-E3/4W has a maximum junction temperature (TJ max.) of +150 °C, validated per Vishay specification document 89046. This rating enables reliable operation in high-ambient environments such as enclosed power supplies and industrial control cabinets, provided thermal design maintains TJ within this limit using the specified RθJC of 2.8 °C/W.
Does VB20150C-E3/4W support lead-free reflow soldering?
Yes, VB20150C-E3/4W features matte tin-plated leads compliant with J-STD-002B and qualified for lead-free reflow up to 260 °C peak temperature. Its MSL Level 1 rating per J-STD-020 confirms suitability for standard SMT assembly without dry-pack requirements, and the D2PAK package withstands 275 °C solder bath exposure for 10 s per JESD 22-B106.
What is the reverse leakage current of VB20150C-E3/4W at 150 V and 125 °C?
At VR = 150 V and TJ = 125 °C, the VB20150C-E3/4W exhibits a maximum reverse leakage current (IR) of 15 mA per diode, as specified in the Electrical Characteristics table of document 89046. This value reflects real-world performance under worst-case thermal and voltage stress, critical for OR-ing and reverse-battery protection reliability.
Is VB20150C-E3/4W pin-compatible with other variants like V20150C-E3/4W?
No - VB20150C-E3/4W uses the D2PAK (TO-263AB) package with three surface-mount terminals and an exposed cathode tab, whereas V20150C-E3/4W uses TO-220AB with through-hole leads and different pin spacing. Mechanical and thermal interfaces differ; PCB layout and mounting method are not interchangeable.
What does the "E3/4W" suffix indicate in VB20150C-E3/4W?
The "E3" suffix denotes RoHS-compliant, commercial-grade construction with matte tin plating and JESD 201 Class 1A whisker resistance. The "/4W" indicates tube packaging with 50 units per tube and a 4-week standard lead time - distinct from "/8W", which denotes tape-and-reel packaging (800 units) for automated placement.
VB20150C-E3/4W Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- TMBS®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 150 V
- Current - Average Rectified (Io) (per Diode):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 1.2 V @ 10 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 150 µA @ 150 V
- Operating Temperature - Junction:
- -55°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263AB (D2PAK)
VB20150C-E3/4W FAQ
1.How can I place an order for VB20150C-E3/4W through Aetrix?
Please submit a Request for Quotation (RFQ) for VB20150C-E3/4W on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VB20150C-E3/4W reliable?
The price and inventory of VB20150C-E3/4W are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VB20150C-E3/4W is usually 5 days.
3.What payment methods are accepted for VB20150C-E3/4W?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VB20150C-E3/4W transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VB20150C-E3/4W?
VB20150C-E3/4W orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VB20150C-E3/4W order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VB20150C-E3/4W?
For technical support, including VB20150C-E3/4W datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VB20150C-E3/4W requirements.
6.How does Aetrix verify that VB20150C-E3/4W is sourced from the original manufacturer or authorized distributors?
All VB20150C-E3/4W products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VB20150C-E3/4W meets industry standards.
7.What is the process for return or replacement of VB20150C-E3/4W?
All VB20150C-E3/4W units undergo pre-shipment inspection (PSI). If there is an issue with VB20150C-E3/4W, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VB20150C-E3/4W part is unused and in its original packaging.
Return procedure for VB20150C-E3/4W:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VB20150C-E3/4W Tags
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BAV99,215
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BAT54SLT1G
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BAT54S-7-F
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BAV99LT1G
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BAT54S,215
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MMBD1503-TP
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