Vishay General Semiconductor - Diodes Division VB30100S-M3/4W
- Part No.:
- VB30100S-M3/4W
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
VB30100S-M3/4W.pdf
- Description:
- DIODE SCHOTTKY 100V 30A TO263AB
- Quantity:
- Payment:

- Shipping:

Inventory:5,216
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Product details
Overview
VB30100S-M3/4W from Vishay General Semiconductor is a high-voltage Trench MOS Barrier Schottky (TMBS®) rectifier in D2PAK (TO-263AB) package, rated for 100 V repetitive peak reverse voltage, 30 A average forward current, and 0.69 V forward voltage at 30 A and 25 °C. It delivers ultra-low VF of 0.39 V at 5 A and 125 °C, enabling high-efficiency operation in DC/DC converters and reverse battery protection circuits.
For engineers reviewing the VB30100S-M3/4W datasheet, VB30100S-M3/4W pinout, VB30100S-M3/4W application, or VB30100S-M3/4W equivalent, key selection criteria include thermal resistance (2.0 °C/W), surge capability (250 A IFSM), junction temperature range (–40 to +150 °C), and MSL Level 1 compliance with 245 °C lead-free reflow tolerance.
Technical Context
This TMBS® rectifier uses trench MOS Schottky technology to achieve lower forward voltage and reduced power loss compared to planar Schottky or fast recovery diodes. Its single-die configuration supports unidirectional conduction with low dV/dt rating (10,000 V/μs) and low junction capacitance - critical for high-frequency switching topologies.
The device operates with a maximum junction temperature of 150 °C and exhibits thermally stable reverse leakage (23 mA at 100 V, 125 °C). Its D2PAK package provides low thermal resistance (RθJC = 2.0 °C/W) and robust mechanical mounting (10 in-lbs max torque), supporting direct heatsink attachment via the exposed drain tab.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 100 V - supports input rails up to 70 V DC with margin for transient spikes in industrial SMPS |
| IF(AV) | 30 A - continuous output current capability with derating above 25 °C case temperature |
| VF @ 30 A, 25 °C | 0.69 V - reduces conduction loss to ≤20.7 W at full load, improving system efficiency |
| RθJC | 2.0 °C/W - enables 130 °C junction rise per 65 W dissipation when mounted on heatsink |
| IFSM | 250 A - withstands 8.3 ms half-sine surge, suitable for inrush and fault-current handling |
| TJ max. | +150 °C - allows operation in sealed enclosures or high-ambient environments without forced cooling |
| dV/dt | 10,000 V/μs - prevents false turn-on in high-di/dt gate-drive or snubberless flyback designs |
Pinout & Package
Package: D2PAK (TO-263AB) surface-mount package with isolated heatsink tab (drain connection), matte tin-plated leads, halogen-free and RoHS-compliant (M3 suffix), MSL Level 1, 245 °C peak reflow.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| K (Cathode) | Output anode-side return node | Connected to ground or low-side switch node; carries full load current during conduction |
| A (Anode) | Input high-side terminal | Connects to positive rail or switching node; reverse-biased during freewheeling phase |
| Heatsink Tab (Drain) | Electrically connected to cathode (K) | Provides primary thermal path to PCB copper or external heatsink; must be electrically tied to K net |
| NC | No internal connection | Two unconnected leads - electrically isolated; no routing or soldering required |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOS Schottky architecture | Enables 0.39 V VF at 5 A and 125 °C - 15–20 % lower than comparable planar Schottkys |
| Low RθJC (2.0 °C/W) | Permits >65 W power dissipation with ≤130 °C junction rise when heatsinked - reduces need for airflow |
| MSL Level 1, 245 °C peak | Supports standard lead-free SMT reflow without preconditioning or baking |
| Halogen-free, RoHS-compliant (M3) | Fulfills IPC-1752A environmental reporting requirements and EU compliance mandates |
| 100 V VRRM with 250 A IFSM | Provides 2.5× surge margin over 100 V nominal bus - suitable for 48 V telecom and automotive systems |
Applications
| DC/DC Converters | Reverse Battery Protection |
|---|---|
Use Scenario: Secondary-side synchronous rectification in isolated 12 V → 3.3 V/5 V buck-derived converters. IC Role / Device Role / Timing Role: Freewheeling rectifier replacing MOSFET+driver; conducts during low-side switch off-time. Use Value: 0.69 V VF at 30 A cuts conduction loss by ~35 % vs. Si FRD, raising efficiency from 92 % to ≥94.5 % at full load. | Use Scenario: Input polarity protection in 24 V vehicle infotainment ECUs with backup battery support. IC Role / Device Role / Timing Role: OR-ing diode placed between main and backup battery inputs. Use Value: 0.39 V VF at 5 A and 125 °C minimizes voltage drop and heat generation during cold-cranking conditions. |
| High-Frequency SMPS | OR-ing Diodes in Redundant Supplies |
Use Scenario: Output rectification in 300 kHz LLC resonant converter for server PSUs. IC Role / Device Role / Timing Role: Unidirectional current path clamping reverse voltage during dead time. Use Value: Low junction capacitance (<1000 pF at 10 V) limits switching loss and EMI generation at MHz-class edge rates. | Use Scenario: Load-sharing diode in dual 48 V telecom rectifier modules feeding common backplane. IC Role / Device Role / Timing Role: Prevents reverse current flow from healthy module into failed unit. Use Value: 250 A IFSM rating handles momentary reverse-current transients during hot-swap events without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STPS30H100CG-TR | Same 100 V VRRM, 30 A IF(AV), but VF = 0.75 V @ 30 A (25 °C); RθJC = 2.5 °C/W | Higher conduction loss and thermal resistance limit use in compact, fanless 30 A designs | Prefer VB30100S-M3/4W where <0.7 V VF and <2.2 °C/W thermal resistance are required |
| SS30100CT | 30 A dual common-cathode configuration; VF = 0.72 V @ 30 A; TO-220AC package; no MSL Level 1 rating | Through-hole mounting only; unsuitable for automated SMT lines or high-density layouts | Choose VB30100S-M3/4W for surface-mount volume production and lead-free reflow compatibility |
Compared with STPS30H100CG-TR and SS30100CT, VB30100S-M3/4W offers the lowest VF at elevated temperature and best thermal performance in a reflow-compatible D2PAK package - making it optimal for space-constrained, high-efficiency 100 V rectification where thermal headroom and assembly yield matter.
Availability
VB30100S-M3/4W is available at Aetrix Electronics and suitable for DC/DC converters, reverse battery protection circuits, and high-frequency switching power supplies requiring stable component supply, long-term lifecycle support, and consistent M3-grade material compliance.
Supply support for VB30100S-M3/4W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability, thermal performance, and application-specific optimization.
The VB30100S-M3/4W belongs to Vishay's TMBS® high-voltage Schottky rectifier product line, engineered specifically for high-efficiency, high-power-density power conversion in automotive, industrial, and telecom infrastructure applications.
FAQ
What is the maximum junction temperature rating for VB30100S-M3/4W?
The VB30100S-M3/4W has a maximum junction temperature (TJ max.) of +150 °C, verified per datasheet revision 15-Mar-2022. This rating allows reliable operation in sealed enclosures or high-ambient environments when thermal design accounts for RθJC = 2.0 °C/W and appropriate heatsinking. Derating curves in Figure 1 confirm usable current down to –40 °C ambient.
Does VB30100S-M3/4W support lead-free reflow assembly?
Yes, VB30100S-M3/4W is qualified to MSL Level 1 per J-STD-020 and supports peak reflow temperatures up to 245 °C, fully compatible with standard lead-free soldering processes. The M3 suffix confirms halogen-free, RoHS-compliant construction and JESD201 Class 1A whisker resistance - no pre-baking required.
How does the forward voltage of VB30100S-M3/4W compare at high temperature?
At 125 °C junction temperature, VB30100S-M3/4W achieves VF = 0.39 V at 5 A and 0.69 V at 30 A - significantly lower than conventional Schottkys. This thermally stable low VF directly reduces conduction losses in high-temperature applications like under-hood automotive modules or enclosed industrial PSUs.
What is the thermal resistance from junction to case (RθJC) for VB30100S-M3/4W?
The VB30100S-M3/4W has a typical junction-to-case thermal resistance (RθJC) of 2.0 °C/W, measured with the heatsink tab properly mounted. This value enables efficient heat transfer to external heatsinks or thick PCB copper layers, supporting >65 W dissipation while maintaining TJ ≤150 °C under steady-state conditions.
Is VB30100S-M3/4W suitable for reverse battery protection in 24 V systems?
Yes, VB30100S-M3/4W is widely used for reverse battery protection in 24 V automotive and industrial systems. With 100 V VRRM, 0.39 V VF at 5 A and 125 °C, and 250 A IFSM, it blocks reverse polarity while minimizing voltage drop and heat during cold-cranking - a key requirement validated in Vishay's application notes for ECU power rails.
VB30100S-M3/4W Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io):
- 30A
- Voltage - Forward (Vf) (Max) @ If:
- 910 mV @ 30 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 1 mA @ 100 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263AB (D2PAK)
- Operating Temperature - Junction:
- -40°C ~ 150°C
VB30100S-M3/4W FAQ
1.How can I place an order for VB30100S-M3/4W through Aetrix?
Please submit a Request for Quotation (RFQ) for VB30100S-M3/4W on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VB30100S-M3/4W reliable?
The price and inventory of VB30100S-M3/4W are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VB30100S-M3/4W is usually 5 days.
3.What payment methods are accepted for VB30100S-M3/4W?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VB30100S-M3/4W transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VB30100S-M3/4W?
VB30100S-M3/4W orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VB30100S-M3/4W order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VB30100S-M3/4W?
For technical support, including VB30100S-M3/4W datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VB30100S-M3/4W requirements.
6.How does Aetrix verify that VB30100S-M3/4W is sourced from the original manufacturer or authorized distributors?
All VB30100S-M3/4W products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VB30100S-M3/4W meets industry standards.
7.What is the process for return or replacement of VB30100S-M3/4W?
All VB30100S-M3/4W units undergo pre-shipment inspection (PSI). If there is an issue with VB30100S-M3/4W, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VB30100S-M3/4W part is unused and in its original packaging.
Return procedure for VB30100S-M3/4W:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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