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Vishay General Semiconductor - Diodes Division VB30120C-E3/8W
- Part No.:
- VB30120C-E3/8W
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Diode Arrays
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
VB30120C-E3/8W.pdf
- Description:
- DIODE ARR SCHOT 120V 15A TO263AB
- Quantity:
- Payment:
- Shipping:
Inventory:9,899
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Product details
Overview
VB30120C-E3/8W from Vishay General Semiconductor is a dual high-voltage trench MOS barrier Schottky rectifier in D2PAK (TO-263AB) package, configured as common cathode, rated for 120 V reverse voltage and 15 A average forward current per diode, with ultra-low 0.50 V forward voltage at 5 A and 125 °C junction temperature-optimized for high-efficiency DC/DC converters and reverse battery protection.
For engineers reviewing the VB30120C-E3/8W datasheet, VB30120C-E3/8W pinout, VB30120C-E3/8W application, or VB30120C-E3/8W equivalent, key selection criteria include its dual common-cathode topology, 0.50 V VF at high temperature, 2.2 °C/W junction-to-case thermal resistance, and tape-and-reel packaging for automated assembly.
Technical Context
This device implements trench MOS Schottky technology to achieve low forward voltage and high switching speed without reverse recovery charge. Its dual-diode common-cathode configuration enables compact OR-ing and freewheeling implementations in synchronous rectification topologies.
Rated for 150 °C maximum junction temperature and 150 A non-repetitive surge current, it supports robust operation in automotive and industrial power supplies where thermal management and transient resilience are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 120 V - blocks up to 120 V reverse voltage without breakdown, suitable for 48 V and 60 V bus systems |
| IF(AV) per diode | 15 A - delivers 15 A continuous forward current per diode at TA = 25 °C with heatsink |
| VF at IF = 5 A, TJ = 125 °C | 0.50 V - enables <0.25 W conduction loss per diode at 5 A, reducing heat generation in thermally constrained designs |
| RθJC | 2.2 °C/W - allows direct thermal path to heatsink, supporting >20 W power dissipation before reaching 150 °C junction limit |
| IFSM | 150 A - withstands short-duration inrush and fault currents in SMPS output stages |
| Circuit configuration | Common cathode - simplifies layout for dual-path OR-ing and synchronous buck freewheeling |
| Package | D2PAK (TO-263AB) - surface-mount package with exposed thermal pad for PCB-level heat spreading |
Pinout & Package
D2PAK (TO-263AB) package with exposed copper thermal pad on underside; molded compound meets UL 94 V-0; matte tin-plated leads solderable per J-STD-002 and JESD 22-B102.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode 1 | Input terminal for first Schottky diode; connects to high-side switch node in buck converter |
| Pin 2 | Cathode (common) | Shared cathode node for both diodes; ties to output rail or ground reference point |
| Pin 3 | Anode 2 | Input terminal for second Schottky diode; used for redundancy, phase interleaving, or dual-rail OR-ing |
| Exposed pad | Thermal connection / Cathode extension | Electrically connected to cathode; must be soldered to large copper pour for thermal and electrical integrity |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOS Schottky technology | Enables 0.50 V VF at 5 A and 125 °C-reducing conduction loss by ~30 % vs. planar Schottky counterparts |
| Common cathode dual-diode configuration | Eliminates need for external cathode tie, minimizing parasitic inductance in high-dI/dt freewheeling paths |
| 2.2 °C/W RθJC | Supports >25 W total power dissipation with standard 2-layer 1 oz Cu PCB heatsinking |
| MSL Level 1 rating | Allows unlimited floor life and reflow at peak 245 °C-compatible with standard lead-free SMT processes |
| RoHS-compliant E3 suffix | Meets JESD 201 Class 1A whisker test and JEDEC moisture sensitivity requirements |
Applications
| Server OR-ing Diode | Automotive DC/DC Converter |
|---|---|
Use Scenario: Parallel power supply units in telecom/datacom servers require seamless load sharing and reverse-current blocking during hot-swap or failure. IC Role / Device Role / Timing Role: Dual common-cathode Schottky rectifier acts as active OR-ing element, conducting only when its input rail exceeds output voltage. Use Value: 0.50 V VF at 125 °C minimizes voltage drop and heat rise across each diode, enabling higher current density per board area than discrete single-diode solutions. | Use Scenario: 12 V–48 V bidirectional DC/DC conversion in 48 V mild-hybrid vehicles demands low-loss, high-reliability rectification. IC Role / Device Role / Timing Role: Freewheeling diode in synchronous buck stage, handling inductor current during high-side FET off-time. Use Value: 150 A IFSM rating withstands cranking transients; 150 °C TJ max supports under-hood placement near engine control units. |
| Industrial Reverse Battery Protection | High-Frequency AC-DC Adapter |
Use Scenario: Programmable logic controllers and motor drives require protection against accidental reverse polarity connection during field maintenance. IC Role / Device Role / Timing Role: Low-VF series-blocking diode placed between battery input and system rail, conducting only during correct polarity. Use Value: 0.50 V VF at 5 A reduces standby power loss to <2.5 mW per volt of reverse margin-critical for battery-powered backup operation. | Use Scenario: Compact USB-PD and laptop adapters operate at >100 kHz switching frequencies, requiring fast, low-loss secondary-side rectification. IC Role / Device Role / Timing Role: Output rectifier in LLC or flyback secondary stage, replacing slower silicon diodes to improve efficiency and reduce heatsink size. Use Value: Zero reverse recovery charge eliminates switching losses and EMI spikes, enabling >94 % full-load efficiency in 65 W designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STPS30M120CG | Single-diode TO-247 package; 30 A IF(AV), 120 V VRRM; VF = 0.72 V @ 15 A, 25 °C | Requires two devices and external cathode tie for dual-path use; higher VF increases conduction loss at elevated temperature | Select when discrete layout flexibility or higher single-diode current rating is prioritized over space and thermal efficiency |
| ON Semiconductor NRVB30120CT | Dual common-cathode TO-220AB; same 120 V/15 A rating; VF = 0.75 V @ 15 A, 25 °C; RθJC = 3.0 °C/W | Through-hole mounting; higher thermal resistance limits power density; no MSL Level 1 rating | Select for legacy through-hole production or cost-sensitive industrial designs where SMT thermal performance is not critical |
Compared with STPS30M120CG and NRVB30120CT, VB30120C-E3/8W delivers lower forward voltage at operating temperature, superior thermal resistance, and MSL Level 1 compatibility-making it optimal for space-constrained, high-efficiency SMT power supplies requiring long-term reliability.
Availability
VB30120C-E3/8W is available at Aetrix Electronics and suitable for server OR-ing, automotive DC/DC converters, and industrial reverse battery protection requiring stable component supply and tape-and-reel delivery for automated assembly.
Supply support for VB30120C-E3/8W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Intertechnology is a global manufacturer of discrete semiconductors and passive components, founded in 1962 and headquartered in Malvern, PA.
The VB30120C-E3/8W belongs to Vishay's TMBS® (Trench MOS Barrier Schottky) rectifier product line, engineered specifically for high-frequency, high-efficiency power conversion in automotive, industrial, and computing applications.
FAQ
What is the maximum junction temperature rating for VB30120C-E3/8W?
The VB30120C-E3/8W has a maximum junction temperature (TJ max.) of +150 °C, enabling reliable operation in under-hood automotive environments and high-density server power supplies where ambient temperatures exceed 85 °C. This rating is validated per JEDEC standards and supported by its 2.2 °C/W junction-to-case thermal resistance.
Does VB30120C-E3/8W support lead-free reflow soldering?
Yes, VB30120C-E3/8W is qualified for lead-free reflow with a peak temperature of 245 °C and meets MSL Level 1 per J-STD-020. Its matte tin-plated leads comply with J-STD-002 and JESD 22-B102, ensuring robust wetting and intermetallic formation during standard SMT assembly.
What is the forward voltage of VB30120C-E3/8W at 15 A and 125 °C?
The VB30120C-E3/8W exhibits a forward voltage of 0.68 V (max.) at IF = 15 A and TJ = 125 °C, as specified in the Vishay datasheet (Document Number: 89041). This value reflects real-world conduction loss under sustained high-temperature operation in power supply output stages.
Is VB30120C-E3/8W pin-compatible with other variants like V30120C-E3/4W?
No-VB30120C-E3/8W uses the D2PAK (TO-263AB) package with three leads and an exposed thermal pad, whereas V30120C-E3/4W is in TO-220AB. The packages differ mechanically and thermally; PCB layout, footprint, and thermal pad design are not interchangeable between these variants.
What does the "8W" suffix indicate in VB30120C-E3/8W?
The "8W" suffix in VB30120C-E3/8W denotes the packaging format: tape-and-reel with 800 units per reel. This contrasts with the "4W" suffix used for tube packaging (50 units per tube), and is optimized for high-volume automated pick-and-place manufacturing.
VB30120C-E3/8W Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- TMBS®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 120 V
- Current - Average Rectified (Io) (per Diode):
- 15A
- Voltage - Forward (Vf) (Max) @ If:
- 970 mV @ 15 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 800 µA @ 120 V
- Operating Temperature - Junction:
- -40°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263AB (D2PAK)
VB30120C-E3/8W FAQ
1.How can I place an order for VB30120C-E3/8W through Aetrix?
Please submit a Request for Quotation (RFQ) for VB30120C-E3/8W on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VB30120C-E3/8W reliable?
The price and inventory of VB30120C-E3/8W are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VB30120C-E3/8W is usually 5 days.
3.What payment methods are accepted for VB30120C-E3/8W?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VB30120C-E3/8W transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VB30120C-E3/8W?
VB30120C-E3/8W orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VB30120C-E3/8W order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VB30120C-E3/8W?
For technical support, including VB30120C-E3/8W datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VB30120C-E3/8W requirements.
6.How does Aetrix verify that VB30120C-E3/8W is sourced from the original manufacturer or authorized distributors?
All VB30120C-E3/8W products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VB30120C-E3/8W meets industry standards.
7.What is the process for return or replacement of VB30120C-E3/8W?
All VB30120C-E3/8W units undergo pre-shipment inspection (PSI). If there is an issue with VB30120C-E3/8W, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VB30120C-E3/8W part is unused and in its original packaging.
Return procedure for VB30120C-E3/8W:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VB30120C-E3/8W Tags
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BAV99-7-F
Diodes Incorporated
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BAT54C-7-F
Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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MMBD1503-TP
Micro Commercial Co
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