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Vishay General Semiconductor - Diodes Division VB30120SG-E3/4W
- Part No.:
- VB30120SG-E3/4W
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
VB30120SG-E3/4W.pdf
- Description:
- DIODE SCHOTTKY 120V 30A TO263AB
- Quantity:
- Payment:
- Shipping:
Inventory:7,244
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Product details
Overview
VB30120SG-E3 from Vishay General Semiconductor is a high-voltage trench MOS barrier Schottky rectifier in D2PAK (TO-263AB) package, rated for 120 V repetitive peak reverse voltage and 30 A average forward current, with ultra-low 0.47 V forward voltage at 5 A and 125 °C junction temperature - optimized for high-frequency DC/DC converters and reverse battery protection circuits.
For engineers reviewing the VB30120SG-E3 datasheet, VB30120SG-E3 pinout, VB30120SG-E3 application, or VB30120SG-E3 equivalent, key selection criteria include thermal resistance (1.6 °C/W), low VF at elevated temperature, avalanche energy rating (175 mJ), and RoHS-compliant matte tin plating per J-STD-002.
Technical Context
This device uses trench MOS Schottky technology to achieve lower forward voltage and higher efficiency than planar Schottky or standard PN rectifiers. It operates with single-diode configuration and supports continuous conduction mode in switching power supplies up to 1 MHz.
Thermal performance is defined by junction-to-case resistance of 1.6 °C/W, enabling direct heatsink mounting via the exposed drain tab. The device meets MSL Level 1 per J-STD-020 with 245 °C peak reflow profile compatibility.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 120 V - blocks up to 120 V reverse voltage without breakdown, suitable for 48 V system inputs with margin. |
| IF(AV) | 30 A - delivers continuous forward current up to 30 A with proper heatsinking at TA = 25 °C. |
| VF @ 5 A, 125 °C | 0.47 V - enables <1.5 W conduction loss at 5 A, critical for high-efficiency 12 V–48 V DC/DC stages. |
| IFSM | 220 A - withstands short-duration surge currents (8.3 ms half-sine), supporting inrush and fault conditions. |
| EAS | 175 mJ - absorbs non-repetitive avalanche energy, improving robustness during inductive switching transients. |
| RθJC | 1.6 °C/W - allows precise junction temperature estimation when mounted on heatsink, enabling thermal design validation. |
| TJ max | 150 °C - supports operation in industrial ambient environments with derated current above 100 °C. |
Pinout & Package
D2PAK (TO-263AB) package with isolated heatsink tab (pin 2), anode (pin 1), and cathode (pin 3). Exposed drain pad serves as thermal and electrical connection to heatsink. Matte tin-plated leads meet J-STD-002 solderability requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode | Input terminal for forward conduction; connects to source side of switching node in buck or OR-ing topology. |
| Pin 2 | Heatsink / Drain Tab | Electrically connected to cathode internally; must be isolated from PCB ground unless circuit requires common-cathode configuration. |
| Pin 3 | Cathode | Output terminal; ties to output rail or return path; carries full load current and defines reference for voltage drop measurement. |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOS Schottky architecture | Reduces forward voltage by ~15 % vs. planar Schottky at 30 A, directly lowering conduction losses in high-current paths. |
| Ultra-low VF = 0.47 V @ 5 A, 125 °C | Enables >96 % efficiency in 12 V input, 5 A output synchronous-buck secondary-side rectification. |
| 175 mJ non-repetitive avalanche energy | Provides margin against voltage spikes during MOSFET turn-off in flyback or LLC resonant converters without external clamping. |
| MSL Level 1, 245 °C peak reflow | Supports standard lead-free SMT assembly without moisture sensitivity concerns or baking requirements. |
| RoHS-compliant, matte tin plating | Ensures reliable solder joint formation and long-term intermetallic stability under thermal cycling stress. |
Applications
| Server VRM Output Rectification | Automotive Reverse Battery Protection |
|---|---|
|
Use Scenario: High-current, high-frequency point-of-load converter supplying CPU/GPU core voltage in datacenter servers. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacement, operating in CCM at 500 kHz–1 MHz. Use Value: 0.47 V VF at 125 °C reduces conduction loss by 0.35 W vs. comparable 0.65 V diode at 20 A, lowering thermal load on VRM heatsink. |
Use Scenario: 12 V/24 V automotive ECU protecting against reverse polarity connection during service or jump-start. IC Role / Device Role / Timing Role: Unidirectional blocking diode placed between battery input and system rail. Use Value: 120 V VRRM and 220 A IFSM handle load dump transients and cranking surges while maintaining <0.5 V dropout at 30 A. |
| Industrial DC/DC Converter Freewheeling | Telecom OR-ing Diode Module |
|
Use Scenario: 48 V input, 12 V output isolated forward converter in factory automation PLC power supply. IC Role / Device Role / Timing Role: Freewheeling path during primary switch off-time, conducting inductor current continuously. Use Value: 1.6 °C/W RθJC enables direct heatsink mounting, sustaining 30 A average current with <40 °C rise above heatsink temperature. |
Use Scenario: Redundant 48 V power feed in telecom shelf with dual hot-swap PSUs. IC Role / Device Role / Timing Role: OR-ing diode ensuring seamless switchover between supplies without backfeed. Use Value: Low 0.81 V VF @ 30 A minimizes voltage drop across diode, preserving tight 48 V ±0.5 V regulation at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STPS30H100CG-TR | 100 V VRRM, 30 A IF(AV), 1.5 °C/W RθJC, VF = 0.72 V @ 30 A, 25 °C | Limited to ≤100 V systems; higher VF increases conduction loss in 48 V+ applications. | Select when 100 V rating suffices and cost sensitivity outweighs 0.09 V VF advantage at high current. |
| ON Semi NRVB30120CTT4G | 120 V VRRM, dual common-cathode configuration, 1.8 °C/W RθJC, VF = 0.85 V @ 30 A, 25 °C | Dual-die layout adds complexity for single-diode use; higher VF degrades efficiency in high-duty-cycle freewheeling. | Prefer only if dual-diode topology is required; otherwise VB30120SG-E3 offers superior single-diode efficiency and thermal performance. |
Compared with STPS30H100CG-TR and NRVB30120CTT4G, VB30120SG-E3 delivers the lowest forward voltage at elevated temperature and best thermal resistance in a single-diode D2PAK package, making it optimal for space-constrained, high-efficiency 48–60 V industrial and telecom power stages.
Availability
VB30120SG-E3 is available at Aetrix Electronics and suitable for server VRMs, automotive reverse battery protection, and industrial DC/DC converters requiring stable component supply, long-lifecycle support, and RoHS-compliant manufacturing.
Supply support for VB30120SG-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Intertechnology is a global semiconductor manufacturer specializing in discrete components, passive elements, and sensors, with leadership in power rectification and precision resistive technologies.
VB30120SG-E3 belongs to Vishay's TMBS® (Trench MOS Barrier Schottky) product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial, computing, and automotive applications where low VF and robust surge capability are critical.
FAQ
What is the maximum junction temperature rating for VB30120SG-E3?
The VB30120SG-E3 has a maximum junction temperature (TJ) of +150 °C, allowing operation in harsh thermal environments such as enclosed industrial enclosures or under-hood automotive locations when properly heatsinked. Derating curves in the datasheet define safe current limits above 100 °C ambient.
Does VB30120SG-E3 support lead-free reflow soldering?
Yes, VB30120SG-E3 meets MSL Level 1 per J-STD-020 and is qualified for lead-free reflow with a maximum peak temperature of 245 °C. Its matte tin-plated leads comply with J-STD-002 for solderability, eliminating pre-baking requirements in standard SMT lines.
What is the thermal resistance from junction to case for VB30120SG-E3?
The typical junction-to-case thermal resistance (RθJC) of VB30120SG-E3 is 1.6 °C/W, measured from the silicon die to the exposed drain tab (pin 2). This value assumes direct metal-to-metal contact with a heatsink and is critical for calculating steady-state junction temperature in thermal design.
Is VB30120SG-E3 suitable for reverse battery protection in 24 V automotive systems?
Yes, VB30120SG-E3 is well-suited for 24 V reverse battery protection due to its 120 V VRRM, 220 A IFSM, and ability to sustain 30 A continuous current with low 0.81 V forward drop at room temperature - minimizing voltage loss and heat generation during normal operation.
How does the avalanche energy rating of VB30120SG-E3 improve system reliability?
The VB30120SG-E3 specifies 175 mJ non-repetitive avalanche energy (EAS) at TJ = 25 °C, providing built-in ruggedness against transient overvoltage events like inductive kickback or MOSFET switching overshoot - reducing need for external TVS clamps in compact DC/DC designs.
VB30120SG-E3/4W Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- TMBS®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 120 V
- Current - Average Rectified (Io):
- 30A
- Voltage - Forward (Vf) (Max) @ If:
- 1.28 V @ 30 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 500 µA @ 120 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263AB (D2PAK)
- Operating Temperature - Junction:
- -40°C ~ 150°C
VB30120SG-E3/4W FAQ
1.How can I place an order for VB30120SG-E3/4W through Aetrix?
Please submit a Request for Quotation (RFQ) for VB30120SG-E3/4W on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VB30120SG-E3/4W reliable?
The price and inventory of VB30120SG-E3/4W are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VB30120SG-E3/4W is usually 5 days.
3.What payment methods are accepted for VB30120SG-E3/4W?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VB30120SG-E3/4W transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VB30120SG-E3/4W?
VB30120SG-E3/4W orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VB30120SG-E3/4W order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VB30120SG-E3/4W?
For technical support, including VB30120SG-E3/4W datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VB30120SG-E3/4W requirements.
6.How does Aetrix verify that VB30120SG-E3/4W is sourced from the original manufacturer or authorized distributors?
All VB30120SG-E3/4W products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VB30120SG-E3/4W meets industry standards.
7.What is the process for return or replacement of VB30120SG-E3/4W?
All VB30120SG-E3/4W units undergo pre-shipment inspection (PSI). If there is an issue with VB30120SG-E3/4W, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VB30120SG-E3/4W part is unused and in its original packaging.
Return procedure for VB30120SG-E3/4W:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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