My Inquiry
My Account
Vishay General Semiconductor - Diodes Division VB40120C-E3/4W
- Part No.:
- VB40120C-E3/4W
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Diode Arrays
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
VB40120C-E3/4W.pdf
- Description:
- DIODE ARR SCHOT 120V 20A TO263AB
- Quantity:
- Payment:
- Shipping:
Inventory:4,638
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
VB40120C-E3/4W from Vishay General Semiconductor is a dual high-voltage trench MOS barrier Schottky rectifier in TO-220AB package, featuring 120 V reverse voltage rating, 2 × 20 A average forward current per diode, and ultra-low 0.43 V forward voltage at 5 A and 125 °C - optimized for high-efficiency DC/DC converters and reverse battery protection circuits.
For engineers reviewing the VB40120C-E3/4W datasheet, VB40120C-E3/4W pinout, VB40120C-E3/4W application, or VB40120C-E3/4W equivalent, key selection criteria include common-cathode dual-diode configuration, 250 A surge rating, thermal resistance of 1.8 °C/W (junction-to-case), and compatibility with JESD 22-B106 soldering (275 °C, 10 s).
Technical Context
This device implements trench MOS Schottky technology to achieve low forward voltage drop and high dV/dt capability (10,000 V/μs), enabling reliable operation in fast-switching topologies. Its common-cathode dual-diode structure supports OR-ing and freewheeling functions without external interconnection.
Rated for junction temperatures up to 150 °C and compliant with RoHS/halogen-free standards (M3 suffix), the VB40120C-E3/4W delivers stable performance under high ambient conditions while meeting JEDEC whisker testing (Class 1A) and UL 94 V-0 flammability requirements for molding compound.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 120 V - supports input rails up to 100 V DC with margin for transient spikes in industrial SMPS |
| IF(AV) per diode | 20 A - enables continuous conduction mode operation in 100–200 W power stages |
| IFSM | 250 A - withstands short-duration inrush and fault currents without bond-wire failure |
| VF @ 5 A, 125 °C | 0.43 V - reduces conduction loss by >30 % vs. standard Schottky diodes at elevated temperature |
| RθJC | 1.8 °C/W - allows direct heatsink mounting for thermal management without thermal interface material derating |
| dV/dt | 10,000 V/μs - prevents false turn-on during high-speed switching in synchronous rectifier or flyback designs |
Pinout & Package
Package: TO-220AB, single-in-line 3-pin through-hole housing with isolated metal tab (pin 2), matte tin-plated leads, and UL 94 V-0 molded compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode of Diode 1 | Connects to input/high-side node in OR-ing or freewheeling path |
| Pin 2 | Cathode (Common) | Electrically tied anode outputs; serves as output/common return node |
| Pin 3 | Anode of Diode 2 | Enables independent sourcing from two inputs (e.g., dual power supplies) |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOS Schottky architecture | Enables lower VF and higher TJ capability than planar Schottky, reducing thermal runaway risk |
| Common-cathode dual-diode configuration | Eliminates need for external cathode tie, saving PCB space and parasitic inductance in compact converters |
| 1.8 °C/W RθJC | Permits direct thermal coupling to heatsink, supporting >15 W dissipation without forced air |
| JESD 22-B106 solder compatibility | Validated for wave and reflow processes up to 275 °C for 10 s - compatible with standard leaded assembly lines |
Applications
| OR-ing Power Path | Reverse Battery Protection |
|---|---|
Use Scenario: Dual-input 12 V supply system where either source powers load, but backfeed between sources is prohibited. IC Role / Device Role / Timing Role: Common-cathode dual Schottky acts as passive OR-ing switch with minimal voltage drop and no control logic required. Use Value: Enables seamless source switchover with <0.45 V total drop at 10 A, preserving >96 % efficiency in automotive body control modules. | Use Scenario: 12 V automotive ECU exposed to accidental reverse battery connection during service. IC Role / Device Role / Timing Role: Placed in series with main power rail to block reverse current while conducting forward current with low loss. Use Value: Prevents damage to downstream DC/DC converters and microcontrollers with only 0.63 V drop at 20 A full-load condition. |
| High-Frequency Freewheeling | DC/DC Converter Output Rectification |
Use Scenario: Synchronous buck converter operating at 500 kHz with 20 A output, requiring low-loss flyback path. IC Role / Device Role / Timing Role: Freewheeling diode across low-side switch, conducting during dead-time and switch-off intervals. Use Value: Reduces switching losses by minimizing reverse recovery charge (Qrr ≈ 0) and conduction loss via 0.43 V VF at 125 °C. | Use Scenario: Isolated forward or half-bridge converter delivering 24 V/15 A to industrial PLC I/O module. IC Role / Device Role / Timing Role: Secondary-side rectifier replacing center-tapped transformer winding, leveraging dual-anode topology for interleaved conduction. Use Value: Achieves >92 % conversion efficiency at full load with 2 × 20 A parallel capability and 250 A surge tolerance for startup transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STPS40M120CG | 120 V, 40 A total (2 × 20 A), TO-220AC package, VF = 0.65 V @ 20 A, RθJC = 2.0 °C/W | Higher VF and slightly worse thermal resistance; same footprint but different pinout (anode-cathode-anode) | Select when STMicroelectronics supply chain preference applies and layout accommodates alternate pin assignment. |
| SS80120CT | 120 V, 40 A total (2 × 20 A), TO-220AB package, VF = 0.72 V @ 20 A, RθJC = 2.2 °C/W, non-M3 halogen content | Higher conduction loss and lower thermal performance; lacks JESD 201 whisker test compliance | Use only in cost-sensitive commercial applications where 150 °C operation and long-term reliability are not critical. |
Compared with STPS40M120CG and SS80120CT, the VB40120C-E3/4W offers the lowest forward voltage at elevated temperature (0.43 V @ 125 °C), best thermal resistance (1.8 °C/W), and full M3 qualification - making it preferred for automotive-grade and thermally constrained industrial designs.
Availability
VB40120C-E3/4W is available at Aetrix Electronics and suitable for high-frequency DC/DC converters, reverse battery protection circuits, and OR-ing power paths requiring stable component supply, long-lifecycle support, and traceable RoHS-compliant sourcing.
Supply support for VB40120C-E3/4W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on power efficiency and reliability.
The VB40120C-E3/4W belongs to Vishay's TMBS® (Trench MOS Barrier Schottky) product line, engineered specifically for high-efficiency, high-temperature switching power applications where low forward voltage and robust surge capability are critical.
FAQ
What is the maximum junction temperature rating for VB40120C-E3/4W?
The VB40120C-E3/4W has a maximum junction temperature (TJ) of +150 °C, validated across its full operating range and supported by its 1.8 °C/W thermal resistance. This rating enables reliable operation in under-hood automotive environments and sealed industrial enclosures without active cooling. Derating curves in the official Vishay datasheet (Doc. #89163) define safe current limits at elevated case temperatures.
Is VB40120C-E3/4W pin-compatible with VI40120C-E3/4W?
No - VB40120C-E3/4W uses the TO-220AB package with isolated tab (pin 2), while VI40120C-E3/4W uses TO-262AA (surface-mount variant). Though both share identical electrical specs and common-cathode pin function mapping, their mechanical footprints and mounting methods differ. PCB layout must be redesigned to accommodate the TO-220AB outline and through-hole mounting of VB40120C-E3/4W.
Does VB40120C-E3/4W require a heatsink in typical 20 A operation?
Yes - at 20 A continuous per diode, VB40120C-E3/4W dissipates ~12.6 W (0.63 V × 20 A). With RθJC = 1.8 °C/W and ambient at 70 °C, junction temperature exceeds 150 °C without heatsinking. A minimum 15 cm² aluminum heatsink (RθSA ≤ 10 °C/W) is recommended to maintain TJ < 130 °C. Thermal design guidance is provided in Vishay Application Note AN99912.
What does the "E3/4W" suffix indicate in VB40120C-E3/4W?
The "E3" denotes tape-and-reel packaging per EIA-481 standard, while "4W" is Vishay's internal package code for TO-220AB with matte tin-plated leads and M3 halogen-free/RoHS-compliant construction. This suffix confirms compliance with JESD 201 Class 1A whisker testing and J-STD-002 solderability standards - critical for automotive and industrial manufacturing.
Can VB40120C-E3/4W replace standard silicon PN rectifiers in existing designs?
Yes - VB40120C-E3/4W can directly replace 120 V, 20 A per diode PN rectifiers (e.g., BYV26E) in most cases, delivering lower VF, zero Qrr, and higher efficiency. However, designers must verify that reverse leakage (up to 45 mA at 120 V/125 °C) does not affect upstream bias networks, and confirm that the common-cathode configuration matches existing circuit topology.
VB40120C-E3/4W Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- TMBS®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 120 V
- Current - Average Rectified (Io) (per Diode):
- 20A
- Voltage - Forward (Vf) (Max) @ If:
- 880 mV @ 20 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 500 µA @ 120 V
- Operating Temperature - Junction:
- -40°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263AB (D2PAK)
VB40120C-E3/4W FAQ
1.How can I place an order for VB40120C-E3/4W through Aetrix?
Please submit a Request for Quotation (RFQ) for VB40120C-E3/4W on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VB40120C-E3/4W reliable?
The price and inventory of VB40120C-E3/4W are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VB40120C-E3/4W is usually 5 days.
3.What payment methods are accepted for VB40120C-E3/4W?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VB40120C-E3/4W transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VB40120C-E3/4W?
VB40120C-E3/4W orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VB40120C-E3/4W order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VB40120C-E3/4W?
For technical support, including VB40120C-E3/4W datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VB40120C-E3/4W requirements.
6.How does Aetrix verify that VB40120C-E3/4W is sourced from the original manufacturer or authorized distributors?
All VB40120C-E3/4W products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VB40120C-E3/4W meets industry standards.
7.What is the process for return or replacement of VB40120C-E3/4W?
All VB40120C-E3/4W units undergo pre-shipment inspection (PSI). If there is an issue with VB40120C-E3/4W, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VB40120C-E3/4W part is unused and in its original packaging.
Return procedure for VB40120C-E3/4W:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VB40120C-E3/4W Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
