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Vishay General Semiconductor - Diodes Division VBT2060C-M3/4W
- Part No.:
- VBT2060C-M3/4W
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Diode Arrays
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
VBT2060C-M3/4W.pdf
- Description:
- DIODE ARR SCHOTT 60V 10A TO263AB
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
VBT2060C-M3/4W from Vishay General Semiconductor is a dual high-voltage trench MOS barrier Schottky rectifier in D2PAK (TO-263AB) package, configured as common cathode with 60 V VRRM, 10 A average forward current per diode, and ultra-low 0.40 V forward voltage at 5 A and 125 °C - used in DC/DC converters for reverse battery protection and OR-ing.
For engineers reviewing the VBT2060C-M3/4W datasheet, VBT2060C-M3/4W pinout, VBT2060C-M3/4W application, or VBT2060C-M3/4W equivalent, key selection criteria include thermal resistance (RθJC = 3.2 °C/W per diode), MSL Level 1 compliance, halogen-free RoHS-compliant construction, and dual-diode common-cathode topology for space-constrained power rails.
Technical Context
This dual Schottky rectifier employs trench MOS technology to achieve low VF and high efficiency across wide temperature range (–55 °C to +150 °C). Its common-cathode configuration enables independent anode control while sharing a single cathode terminal, supporting bidirectional current routing in redundant power paths.
Rated for 150 A IFSM surge per diode and optimized for high-frequency switching (e.g., >100 kHz), it delivers stable performance under pulsed conditions (≤40 ms pulse width) and maintains low leakage (<40 mA at 125 °C, VR = 60 V), critical for battery-powered systems requiring low standby loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 60 V - supports 48 V nominal bus systems with 25 % safety margin against transients |
| IF(AV) per diode | 10 A - enables continuous 20 A total output when both diodes operate in parallel configuration |
| VF @ 5 A, 125 °C | 0.40 V - reduces conduction loss by ~35 % vs. standard Schottky diodes at elevated temperature |
| RθJC per diode | 3.2 °C/W - allows direct heatsink mounting for thermal management without additional isolation layers |
| IFSM per diode | 150 A - withstands inrush currents in hot-swap and load-switching applications |
| TJ max. | +150 °C - enables operation in sealed industrial enclosures without forced air cooling |
| Package | D2PAK (TO-263AB) - surface-mount footprint with exposed thermal pad for PCB-level heat extraction |
Pinout & Package
Package: D2PAK (TO-263AB), thermally enhanced surface-mount outline with exposed copper drain pad (pin 3) for heatsinking. Matte tin-plated leads meet J-STD-002 solderability and JESD 201 Class 1A whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode 1 | Input terminal for first diode; connects to primary-side rail or battery input in OR-ing |
| Pin 2 | Anode 2 | Input terminal for second diode; enables independent sourcing from dual supplies or backup sources |
| Pin 3 (Heatsink tab) | Common Cathode | Electrically connected to both cathodes; must be tied to system ground or output rail; provides primary thermal path |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOS Schottky architecture | Enables lower VF and higher temperature stability than planar Schottky, reducing conduction loss in 12–48 V DC/DC stages |
| MSL Level 1 rating | Allows unlimited floor life and reflow up to 245 °C peak without baking, simplifying SMT line integration |
| Halogen-free, RoHS-compliant (M3 suffix) | Meets IPC-1752A material declaration requirements for automotive and industrial OEMs |
| Common-cathode dual-diode configuration | Reduces component count in dual-input power redundancy designs versus two discrete Schottkys |
| UL 94 V-0 molding compound | Provides flame-retardant housing essential for enclosed power modules and telecom equipment |
Applications
| Reverse Battery Protection | OR-ing Diode in Dual-Supply Systems |
|---|---|
Use Scenario: Prevents damage to downstream circuitry during accidental reverse polarity connection of a 24 V or 48 V battery. IC Role / Device Role / Timing Role: Acts as a low-loss series blocking element; conducts only when battery polarity is correct. Use Value: 0.40 V VF at 5 A/125 °C minimizes voltage drop and self-heating during sustained load, extending battery runtime. | Use Scenario: Selects between two independent 12 V power sources (e.g., main supply and backup) without backfeed. IC Role / Device Role / Timing Role: Each anode accepts one supply; common cathode delivers unified output rail. Use Value: Dual-diode integration eliminates timing skew and layout mismatch issues inherent in discrete dual-Schottky solutions. |
| High-Frequency DC/DC Converter Output Rectification | Freewheeling Diode in Synchronous Buck Converters |
Use Scenario: Used in secondary-side rectification of 300 kHz–1 MHz isolated DC/DC converters for telecom and server PSUs. IC Role / Device Role / Timing Role: Provides unidirectional current path after transformer secondary winding. Use Value: Low RθJC (3.2 °C/W) and 150 °C TJ max enable compact thermal design without derating at full load. | Use Scenario: Placed across inductive load in non-synchronous buck stage to clamp flyback voltage during low-side switch off-time. IC Role / Device Role / Timing Role: Conducts freewheeling current during dead time; clamps VDS spike on synchronous FET. Use Value: 150 A IFSM rating handles transient energy from high-current inductors without avalanche stress or failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| VBT2060C-M3/8W | Same die, tape-and-reel packaging (800/reel); identical electrical specs and thermal performance | No functional difference; selected for automated pick-and-place volume production | Choose /8W for SMT line throughput; /4W for prototyping or low-volume tube-based assembly |
| SS210H | Single-diode 10 A, 100 V Schottky in SMA package; no common-cathode dual configuration | Requires two devices and extra layout area to replicate dual functionality; higher VF (0.55 V @ 10 A) | Select only if dual-anode/common-cathode topology is unnecessary and board space permits discrete placement |
Compared with VBT2060C-M3/4W, the /8W variant offers identical performance in reel format for high-volume manufacturing, while SS210H requires duplication and yields higher conduction loss and larger PCB footprint - making VBT2060C-M3/4W optimal for integrated dual-rail protection and OR-ing.
Availability
VBT2060C-M3/4W is available at Aetrix Electronics and suitable for reverse battery protection, OR-ing diode implementation, and high-frequency DC/DC converter output rectification requiring stable component supply and long-term industrial lifecycle support.
Supply support for VBT2060C-M3/4W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on power efficiency and reliability.
The VBT2060C-M3/4W belongs to Vishay's TMBS® (Trench MOS Barrier Schottky) product line, engineered specifically for high-efficiency, high-temperature power conversion in automotive, industrial, and telecom infrastructure.
FAQ
What is the maximum junction temperature rating for VBT2060C-M3/4W?
The VBT2060C-M3/4W has a maximum junction temperature (TJ) of +150 °C, verified per datasheet revision 26-Jun-2023. This rating allows uninterrupted operation in sealed enclosures or high-ambient environments without active cooling. Derating begins above 25 °C ambient per Fig. 1, and thermal design must account for RθJC = 3.2 °C/W per diode. The VBT2060C-M3/4W achieves this rating using trench MOS Schottky technology that maintains low VF stability up to TJ max.
Is VBT2060C-M3/4W suitable for reverse battery protection in 48 V automotive systems?
Yes, VBT2060C-M3/4W is suitable for reverse battery protection in 48 V systems. Its 60 V VRRM provides adequate margin against load-dump transients, and its 0.40 V forward voltage at 5 A and 125 °C minimizes power loss and thermal rise during sustained conduction. The device's –55 °C to +150 °C operating range and MSL Level 1 reflow compatibility align with automotive qualification requirements. VBT2060C-M3/4W is not AEC-Q101 qualified but is widely deployed in industrial-grade 48 V subsystems where extended temperature operation is required.
How does the common-cathode configuration of VBT2060C-M3/4W benefit OR-ing applications?
The common-cathode configuration of VBT2060C-M3/4W allows two independent anodes (Pins 1 and 2) to feed a shared output rail (Pin 3), eliminating cross-conduction risk and simplifying control logic in dual-supply OR-ing. Unlike discrete diodes, this monolithic structure ensures matched VF and thermal tracking between channels, preventing current hogging. In practice, VBT2060C-M3/4W enables compact, low-loss power path selection without external balancing components - a key advantage over using two separate Schottky diodes.
What is the thermal resistance from junction to case (RθJC) for VBT2060C-M3/4W, and how should it be used in layout?
VBT2060C-M3/4W specifies RθJC = 3.2 °C/W per diode, measured from junction to the exposed metal tab (Pin 3). For effective thermal management, the tab must be soldered to a large copper pour or external heatsink with minimum 10 mm² thermal pad area and ≥2 oz copper. Layout should avoid thermal vias under the tab unless filled and capped, as voids degrade heat transfer. This RθJC value enables accurate junction temperature estimation: TJ = TCASE + (PDISS × 3.2). The VBT2060C-M3/4W datasheet confirms this value under JEDEC-standard test conditions.
Does VBT2060C-M3/4W meet RoHS and halogen-free requirements?
Yes, VBT2060C-M3/4W meets RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. The "M3" suffix explicitly denotes compliance with both requirements, and the molding compound satisfies UL 94 V-0 flammability rating. Lead finish is matte tin, qualified to J-STD-002 and JESD 22-B102 for solderability. Vishay documents this compliance in Document Number 87972 and references material categorization at www.vishay.com/doc?99912. VBT2060C-M3/4W is rated for commercial temperature grade (–55 °C to +150 °C).
VBT2060C-M3/4W Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- TMBS®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 60 V
- Current - Average Rectified (Io) (per Diode):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 650 mV @ 10 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 850 µA @ 60 V
- Operating Temperature - Junction:
- -55°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263AB (D2PAK)
VBT2060C-M3/4W FAQ
1.How can I place an order for VBT2060C-M3/4W through Aetrix?
Please submit a Request for Quotation (RFQ) for VBT2060C-M3/4W on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VBT2060C-M3/4W reliable?
The price and inventory of VBT2060C-M3/4W are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VBT2060C-M3/4W is usually 5 days.
3.What payment methods are accepted for VBT2060C-M3/4W?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VBT2060C-M3/4W transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VBT2060C-M3/4W?
VBT2060C-M3/4W orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VBT2060C-M3/4W order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VBT2060C-M3/4W?
For technical support, including VBT2060C-M3/4W datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VBT2060C-M3/4W requirements.
6.How does Aetrix verify that VBT2060C-M3/4W is sourced from the original manufacturer or authorized distributors?
All VBT2060C-M3/4W products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VBT2060C-M3/4W meets industry standards.
7.What is the process for return or replacement of VBT2060C-M3/4W?
All VBT2060C-M3/4W units undergo pre-shipment inspection (PSI). If there is an issue with VBT2060C-M3/4W, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VBT2060C-M3/4W part is unused and in its original packaging.
Return procedure for VBT2060C-M3/4W:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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