Vishay General Semiconductor - Diodes Division VBT3045C-M3/4W

Overview

VBT3045C-M3/4W from Vishay General Semiconductor is a dual low-voltage trench MOS barrier Schottky rectifier in D2PAK (TO-263AB) package, configured as common cathode with 45 V reverse voltage rating, 15 A average forward current per diode, and ultra-low 0.30 V forward voltage at 5 A and 125 °C - optimized for high-efficiency DC/DC converters and reverse battery protection.

For engineers reviewing the VBT3045C-M3/4W datasheet, VBT3045C-M3/4W pinout, VBT3045C-M3/4W application, or VBT3045C-M3/4W equivalent, key selection considerations include its dual common-cathode topology, thermal resistance of 1.6 °C/W per diode, MSL Level 1 qualification, and 200 A surge capability - critical for compact, thermally constrained power designs.

Technical Context

This device integrates two independent Schottky diodes in a single D2PAK package with shared cathode terminal, leveraging trench MOS technology to achieve lower VF and higher efficiency than planar Schottky counterparts. Its 150 °C maximum junction temperature and 1.6 °C/W junction-to-case thermal resistance support high-power-density operation without forced cooling.

The VBT3045C-M3/4W delivers 0.39 V typical VF at 15 A and 25 °C, dropping to 0.30 V at 5 A and 125 °C - enabling reduced conduction loss in automotive and industrial 12 V–24 V systems. Reverse leakage remains ≤50 mA at 45 V and 125 °C, ensuring stable blocking under elevated ambient conditions.

Key Specifications

Pinout & Package

Package: D2PAK (TO-263AB), surface-mount, single-row 3-terminal outline with exposed metal tab for thermal and electrical connection to cathode. Matte tin-plated leads, halogen-free, RoHS-compliant, MSL Level 1, 245 °C reflow peak.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual Schottky rectifier applications.

Compared with VBT3045C-M3/4W, the VBT3045C-M3/8W offers identical electrical and thermal performance in tape-and-reel format, while SS3045CT provides a lower-cost alternative with higher forward voltage - requiring careful thermal validation in high-ambient applications.

Availability

VBT3045C-M3/4W is available at Aetrix Electronics and suitable for high-frequency DC/DC converters, reverse battery protection circuits, and redundant power OR-ing applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for VBT3045C-M3/4W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.

The VBT3045C-M3/4W belongs to Vishay's TMBS® (Trench MOS Barrier Schottky) product line, engineered specifically for high-efficiency, high-temperature power conversion in automotive, industrial, and computing systems where low VF and thermal robustness are critical.

FAQ

What is the maximum junction temperature rating for the VBT3045C-M3/4W?

The VBT3045C-M3/4W has a maximum junction temperature (TJ max.) of +150 °C, as specified in the Vishay datasheet revision 02-Jul-2018. This rating enables reliable operation in under-hood automotive environments and industrial enclosures with elevated ambient temperatures. Derating curves confirm usable current capacity down to 0 A at 150 °C case temperature. The VBT3045C-M3/4W must be mounted to a sufficient copper area or heatsink to maintain TJ within limits under full load.

Is the VBT3045C-M3/4W pin-compatible with other D2PAK dual Schottky rectifiers?

The VBT3045C-M3/4W uses the standard D2PAK (TO-263AB) footprint with Pin 1 (Anode 1), Pin 2 (Anode 2), and Tab (Common Cathode). While mechanical dimensions match industry-standard D2PAK, pin function alignment depends on internal configuration - VBT3045C-M3/4W is common-cathode, whereas some alternatives use common-anode. Always verify schematic symbol and layout against the VBT3045C-M3/4W datasheet before substitution.

What does the "M3/4W" suffix mean in VBT3045C-M3/4W?

The "M3" suffix indicates halogen-free, RoHS-compliant, commercial-grade construction meeting JESD 201 Class 2 whisker resistance and J-STD-020 MSL Level 1. "4W" denotes the packaging format: 50 devices per tube. This distinguishes it from VBT3045C-M3/8W, which uses tape-and-reel packaging (800/reel). Both share identical die, electrical specs, and thermal performance.

Does the VBT3045C-M3/4W require a heatsink in typical applications?

Yes - the VBT3045C-M3/4W relies on thermal conduction through its exposed metal tab (cathode) to manage power dissipation. With RθJC = 1.6 °C/W per diode, even at 15 A and 0.39 V VF, ~5.9 W of heat is generated per diode. Without adequate copper pour or external heatsink, junction temperature will exceed 150 °C. PCB layout must include ≥4 cm² of 2-oz copper connected to the tab, per Vishay recommended mounting pad.

How does the VBT3045C-M3/4W perform at elevated temperature compared to standard Schottky diodes?

The VBT3045C-M3/4W maintains 0.30 V VF at 5 A and 125 °C - significantly lower than typical planar Schottky diodes (0.45–0.55 V under same conditions). This results in ~35 % lower conduction loss at high temperature, directly improving efficiency and reducing thermal stress. Its leakage current remains controlled at ≤50 mA at 45 V/125 °C, avoiding thermal runaway issues seen in less-stable Schottky structures. The VBT3045C-M3/4W is specifically optimized for this behavior via trench MOS barrier design.