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Vishay General Semiconductor - Diodes Division VBT3080S-M3/4W
- Part No.:
- VBT3080S-M3/4W
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
VBT3080S-M3/4W.pdf
- Description:
- DIODE SCHOTTKY 80V 30A TO263AB
- Quantity:
- Payment:
- Shipping:
Inventory:4,269
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Product details
Overview
VBT3080S-M3/4W from Vishay General Semiconductor is a Trench MOS Barrier Schottky rectifier in D2PAK (TO-263AB) package, rated for 80 V reverse voltage and 30 A average forward current, with ultra-low forward voltage of 0.39 V at 5 A and 125 °C junction temperature - optimized for high-efficiency DC/DC converters and reverse battery protection circuits.
For engineers reviewing the VBT3080S-M3/4W datasheet, VBT3080S-M3/4W pinout, VBT3080S-M3/4W application, or VBT3080S-M3/4W equivalent, key selection criteria include its 1.5 °C/W junction-to-case thermal resistance, MSL Level 1 moisture sensitivity, halogen-free RoHS-compliant construction, and verified 200 A surge capability under 8.3 ms half-sine conditions.
Technical Context
This device uses trench MOS Schottky technology to achieve lower forward voltage and reduced conduction losses compared to planar Schottky or standard PN rectifiers. Its single-diode configuration features an anode-cathode–no-connect (NC) pinout layout optimized for high-current PCB mounting with heatsink interface.
Designed for operation up to 150 °C junction temperature, it delivers stable reverse leakage below 45 mA at 125 °C and 80 V, and maintains low VF drift across temperature - critical for thermally constrained power stages in automotive and industrial SMPS.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 80 V - supports input rails up to 60 V nominal with 20 V margin for transients in 48 V systems |
| IF(AV) | 30 A - enables continuous conduction mode operation in high-power DC/DC converters without forced air |
| VF @ 5 A, 125 °C | 0.39 V - reduces conduction loss to < 200 mW per diode at typical operating point |
| IFSM | 200 A - withstands inrush and fault currents in OR-ing and hot-swap applications |
| RθJC | 1.5 °C/W - allows direct heatsink mounting to sustain full 30 A load at ≤125 °C case temperature |
| TJ max. | 150 °C - qualified for under-hood automotive and industrial ambient environments |
| IR @ 80 V, 125 °C | 45 mA - limits standby power loss in reverse-battery protection circuits |
Pinout & Package
Package: D2PAK (TO-263AB), surface-mount, single-diode configuration with isolated heatsink tab. Matte tin-plated leads, J-STD-002 solderable, M3 suffix meets JESD 201 Class 1A whisker test.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (NC) | No-connect terminal | Electrically isolated; used for mechanical stability and thermal anchoring only |
| Pin 2 (A) | Anode | Main current entry point; bonded to internal die anode; connects to input/high-side rail |
| Pin 3 (K) | Cathode | Main current exit point; tied to heatsink tab and PCB copper pour for thermal and electrical return path |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOS Schottky architecture | Enables 0.39 V VF at 5 A/125 °C - 15–20 % lower than comparable planar Schottkys |
| MSL Level 1 rating | Allows unlimited floor life and reflow at 245 °C peak - eliminates baking requirements for SMT assembly |
| Halogen-free, RoHS-compliant | Meets IPC-1752A material declaration standards for green electronics manufacturing |
| D2PAK thermal interface | Heatsink tab provides low-inductance, low-resistance path to PCB copper - improves EMI and thermal transient response |
| 150 °C TJ max | Supports operation in sealed enclosures or high-ambient zones without derating below 30 A |
Applications
| High-Frequency DC/DC Converters | Reverse Battery Protection |
|---|---|
Use Scenario: Secondary-side synchronous rectification in 300 kHz–1 MHz isolated flyback or LLC converters powering FPGA or ASIC core rails. IC Role / Device Role / Timing Role: Freewheeling Schottky rectifier replacing MOSFETs where gate drive complexity or body diode conduction loss is prohibitive. Use Value: 0.39 V VF at 125 °C cuts conduction loss by ~35 % vs. legacy 0.6 V Schottkys, directly improving efficiency by 0.8–1.2 % at full load. | Use Scenario: Polarity-reversal safeguard in 24–48 V vehicle infotainment or ADAS ECUs exposed to jump-start events. IC Role / Device Role / Timing Role: High-current blocking diode placed between battery input and system ground plane. Use Value: 200 A IFSM rating handles 100 ms jump-start surges without degradation; 45 mA IR at 125 °C ensures < 4 mW standby dissipation. |
| OR-ing Diodes in Redundant Power Supplies | Freewheeling Diodes in Switching Regulators |
Use Scenario: Back-to-back diode configuration in dual-input 12 V telecom PSUs to prevent backfeed and enable seamless switchover. IC Role / Device Role / Timing Role: Low-VF, high-current path selector enabling automatic source prioritization without control IC. Use Value: 30 A IF(AV) and 1.5 °C/W RθJC allow parallel operation without active thermal management - simplifies board layout and BOM. | Use Scenario: Inductor freewheel path in 10–20 A buck regulators for industrial PLC I/O modules. IC Role / Device Role / Timing Role: Fast-recovery, low-loss commutation path during high-side switch off-time. Use Value: Ultra-low VF minimizes voltage droop during transient load steps; D2PAK thermal mass stabilizes junction temperature during burst-mode operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STPS30H100CG-TR | 100 V VRRM, 30 A IF(AV), VF = 0.75 V @ 30 A, 2.0 °C/W RθJC | Higher voltage rating but higher VF and worse thermal resistance - less efficient at 48 V systems | Select when 100 V standoff is required; avoid if 80 V suffices and thermal headroom is limited |
| ON Semiconductor NRVB30M80CT | 80 V VRRM, 30 A IF(AV), VF = 0.78 V @ 30 A, TO-220AC package, no NC pin | Through-hole, higher VF, no MSL Level 1 - requires baking and manual assembly; inferior thermal path | Use only for legacy through-hole designs; not recommended for new SMT high-density layouts |
Compared with STPS30H100CG-TR and NRVB30M80CT, the VBT3080S-M3/4W delivers superior thermal performance (1.5 vs. ≥2.0 °C/W), lower conduction loss at elevated temperature, and full SMT process compatibility - making it optimal for space-constrained, high-efficiency 48 V power rails.
Availability
VBT3080S-M3/4W is available at Aetrix Electronics and suitable for high-frequency DC/DC converters, reverse battery protection circuits, and OR-ing diode applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for automotive and industrial programs.
Supply support for VBT3080S-M3/4W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.
The VBT series targets high-current, low-VF Schottky rectification in automotive, industrial, and telecom power supplies - engineered specifically for thermal robustness and SMT manufacturability in demanding environments.
FAQ
What is the maximum junction temperature rating for the VBT3080S-M3/4W?
The VBT3080S-M3/4W has a maximum junction temperature (TJ max.) of +150 °C, validated per JEDEC standards and confirmed in thermal characterization curves. This rating enables reliable operation in sealed enclosures or high-ambient environments such as automotive engine compartments or industrial motor drives. The VBT3080S-M3/4W must be mounted to a heatsink or thermal pad to maintain this limit under full 30 A load.
Does the VBT3080S-M3/4W have a no-connect (NC) pin, and what is its purpose?
Yes, the VBT3080S-M3/4W features a no-connect (NC) pin - Pin 1 in the D2PAK (TO-263AB) package. It is electrically isolated from the die and serves solely for mechanical reinforcement and thermal anchoring to the PCB. The NC pin improves mounting stability and enhances heat transfer from the heatsink tab to the board, but must not be connected to any circuit node. This design is confirmed in the official Vishay package outline diagram for VBT3080S-M3/4W.
What is the forward voltage of the VBT3080S-M3/4W at 30 A and 125 °C?
The VBT3080S-M3/4W exhibits a forward voltage (VF) of 0.73 V at 30 A and 125 °C, as specified in the Electrical Characteristics table of the official Vishay datasheet (Document Number: 87979). This value is measured under pulsed conditions (≤40 ms) and reflects real-world performance in thermally stressed power stages. At room temperature, VF rises to 0.82 V (typical) and 0.95 V (max) at the same current.
Is the VBT3080S-M3/4W suitable for reverse battery protection in automotive applications?
Yes, the VBT3080S-M3/4W is explicitly recommended for reverse battery protection, as stated in Vishay's Typical Applications section. Its 80 V VRRM rating covers 48 V systems with margin, 200 A IFSM handles jump-start surges, and 45 mA IR at 125 °C ensures minimal standby loss. The VBT3080S-M3/4W also meets MSL Level 1 and JESD 201 Class 1A whisker testing - fulfilling key automotive qualification prerequisites for under-hood use.
What packaging format does the VBT3080S-M3/4W ship in, and what is the base quantity?
The VBT3080S-M3/4W ships in tube packaging with a base quantity of 50 units per tube, as defined in the Ordering Information table of the Vishay datasheet. The "4W" suffix denotes this tube delivery mode, while "8W" indicates tape-and-reel (800 units). Both variants share identical electrical and thermal specifications; the choice depends on SMT line requirements and production volume planning for the VBT3080S-M3/4W.
VBT3080S-M3/4W Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 80 V
- Current - Average Rectified (Io):
- 30A
- Voltage - Forward (Vf) (Max) @ If:
- 950 mV @ 30 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 1 mA @ 80 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263AB (D2PAK)
- Operating Temperature - Junction:
- -55°C ~ 150°C
VBT3080S-M3/4W FAQ
1.How can I place an order for VBT3080S-M3/4W through Aetrix?
Please submit a Request for Quotation (RFQ) for VBT3080S-M3/4W on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VBT3080S-M3/4W reliable?
The price and inventory of VBT3080S-M3/4W are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VBT3080S-M3/4W is usually 5 days.
3.What payment methods are accepted for VBT3080S-M3/4W?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VBT3080S-M3/4W transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VBT3080S-M3/4W?
VBT3080S-M3/4W orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VBT3080S-M3/4W order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VBT3080S-M3/4W?
For technical support, including VBT3080S-M3/4W datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VBT3080S-M3/4W requirements.
6.How does Aetrix verify that VBT3080S-M3/4W is sourced from the original manufacturer or authorized distributors?
All VBT3080S-M3/4W products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VBT3080S-M3/4W meets industry standards.
7.What is the process for return or replacement of VBT3080S-M3/4W?
All VBT3080S-M3/4W units undergo pre-shipment inspection (PSI). If there is an issue with VBT3080S-M3/4W, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VBT3080S-M3/4W part is unused and in its original packaging.
Return procedure for VBT3080S-M3/4W:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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