Vishay General Semiconductor - Diodes Division VBT30L60C-M3/I

Overview

VBT30L60C-M3/I from Vishay General Semiconductor is a dual common-cathode Trench MOS Barrier Schottky (TMBS®) rectifier in D2PAK (TO-263AB) package, rated for 60 V reverse voltage, 30 A average forward current (15 A per diode), and 0.45 V forward voltage at 15 A. It delivers ultra-low VF (0.32 V at 5 A, 125 °C) for high-efficiency DC/DC converters and reverse battery protection circuits.

For engineers reviewing the VBT30L60C-M3/I datasheet, VBT30L60C-M3/I pinout, VBT30L60C-M3/I application, or VBT30L60C-M3/I equivalent, key selection criteria include its dual common-cathode configuration, 200 A surge rating, 1.8 °C/W junction-to-case thermal resistance per diode, MSL Level 1 qualification, and halogen-free RoHS-compliant M3 suffix.

Technical Context

This device integrates two independent Schottky diodes sharing a common cathode terminal, enabling compact OR-ing and freewheeling topologies without external node tying. Its trench MOS barrier structure reduces forward voltage while maintaining low leakage (< 4 mA at 60 V, 25 °C) and high dV/dt capability (10,000 V/μs).

Designed for surface-mount power conversion, it operates from −40 °C to +150 °C junction temperature, with thermal performance validated via RθJC = 1.8 °C/W per diode and RθJA = 0.8 °C/W per device under standard heatsink conditions.

Key Specifications

Pinout & Package

Package: D2PAK (TO-263AB), surface-mount, isolated heatsink tab (pin 3), matte tin-plated leads compliant with J-STD-002 and JESD 22-B102.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual Schottky rectifier applications.

Compared with VBT30L60C-M3/I, the E3 variant offers identical electrical performance but lacks halogen-free certification, while SS306H requires layout duplication and sacrifices 70 mV VF advantage-making VBT30L60C-M3/I optimal for space-constrained, high-efficiency dual-path designs.

Availability

VBT30L60C-M3/I is available at Aetrix Electronics and suitable for high-frequency DC/DC converters, reverse battery protection circuits, and redundant power OR-ing applications requiring stable component supply, long-term lifecycle support, and halogen-free compliance.

Supply support for VBT30L60C-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on power efficiency and reliability.

The VBT30L60C-M3/I belongs to Vishay's TMBS® trench Schottky rectifier product line, engineered specifically for high-current, low-VF applications in switching power supplies and automotive body electronics.

FAQ

What is the maximum junction temperature rating for VBT30L60C-M3/I?

The VBT30L60C-M3/I has a maximum operating junction temperature of +150 °C, verified per JEDEC standards and confirmed in the Vishay datasheet (Document Number: 89329). This rating enables reliable operation in thermally demanding environments such as enclosed industrial power supplies or automotive under-hood applications. Thermal design must ensure RθJC = 1.8 °C/W per diode is maintained via proper heatsinking of the exposed tab (pin 3). The VBT30L60C-M3/I datasheet provides derating curves for continuous current vs. case temperature.

Does VBT30L60C-M3/I support lead-free reflow soldering?

Yes, the VBT30L60C-M3/I is qualified to MSL Level 1 per J-STD-020 and supports peak reflow temperatures up to 245 °C, making it fully compatible with standard lead-free soldering processes. Its matte tin-plated leads meet J-STD-002 and JESD 22-B102 solderability requirements. No pre-baking is required prior to assembly. The VBT30L60C-M3/I packaging and plating are designed for robust intermetallic formation and long-term joint reliability in high-volume manufacturing.

What does the "M3" suffix indicate in VBT30L60C-M3/I?

The "M3" suffix in VBT30L60C-M3/I denotes halogen-free, RoHS-compliant construction meeting IEC 61249-2-21 requirements, in addition to standard RoHS compliance. It confirms the molding compound contains no brominated or chlorinated flame retardants and satisfies Vishay's material categorization policy (www.vishay.com/doc?99912). The "I" indicates tape-and-reel packaging with 800 units per reel. The VBT30L60C-M3/I is intended for environmentally regulated industrial and automotive applications where halogen content restrictions apply.

How is the common-cathode configuration implemented in VBT30L60C-M3/I?

The VBT30L60C-M3/I integrates two independent Schottky diodes with electrically tied cathodes connected exclusively to the exposed metal tab (pin 3). Pins 1 and 2 serve as separate anodes, allowing independent input connections while sharing a single low-inductance output return path. This eliminates external wiring or copper traces between cathodes, reducing parasitic inductance and layout complexity. The VBT30L60C-M3/I pinout diagram in the official datasheet explicitly labels pin 3 as "K" (cathode) and confirms the internal common-cathode topology.

What is the typical forward voltage of VBT30L60C-M3/I at elevated temperature?

At 125 °C junction temperature, the VBT30L60C-M3/I exhibits a typical forward voltage of 0.32 V at 5.0 A, 0.36 V at 7.5 A, and 0.45 V at 15 A-demonstrating positive temperature coefficient behavior critical for current sharing in parallel configurations. These values are measured per diode and documented in the Electrical Characteristics table of the Vishay datasheet (89329, page 2). The VBT30L60C-M3/I maintains low VF stability across temperature, supporting consistent efficiency in wide-ambient applications.