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Vishay General Semiconductor - Diodes Division VBT4060C-E3/4W
- Part No.:
- VBT4060C-E3/4W
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Diode Arrays
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
VBT4060C-E3/4W.pdf
- Description:
- DIODE ARR SCHOTT 60V 20A TO263AB
- Quantity:
- Payment:
- Shipping:
Inventory:2,349
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Product details
Overview
VBT4060C-E3/4W from Vishay General Semiconductor is a dual common-cathode Trench MOS Barrier Schottky rectifier in D2PAK (TO-263AB) package, rated for 60 V reverse voltage, 40 A average forward current (2 × 20 A per diode), and ultra-low 0.32 V forward voltage at 5 A and 125 °C - enabling high-efficiency DC/DC converters and reverse battery protection circuits.
For engineers reviewing the VBT4060C-E3/4W datasheet, VBT4060C-E3/4W pinout, VBT4060C-E3/4W application, or VBT4060C-E3/4W equivalent, key selection criteria include its dual common-cathode configuration, 240 A surge rating, 1.5 °C/W junction-to-case thermal resistance per diode, MSL Level 1 qualification, and suitability for high-frequency switching power supplies requiring low conduction loss.
Technical Context
This device integrates two independent Schottky diodes in a single D2PAK thermally optimized package with shared cathode connection. Its trench MOS architecture enables lower VF versus planar Schottky devices while maintaining low leakage and high dV/dt capability (10,000 V/μs).
The dual-diode layout supports OR-ing, freewheeling, and synchronous rectification topologies where matched forward characteristics and thermal coupling between diodes improve system-level efficiency and reliability under asymmetric load conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 60 V - maximum repetitive reverse blocking voltage per diode; defines safe operating range in buck, flyback, and reverse polarity protection circuits |
| IF(AV) per diode | 20 A - continuous forward current rating per diode at TC = 110 °C; enables 40 A total device output with shared heatsink |
| VF at IF = 5 A, TJ = 125 °C | 0.32 V - ultra-low conduction loss critical for >95 % efficiency in high-current, low-voltage DC/DC stages |
| IFSM | 240 A - non-repetitive peak surge current handling; supports robust startup and fault transient immunity |
| RθJC per diode | 1.5 °C/W - thermal resistance from junction to case; allows precise heatsink sizing when mounted on PCB copper plane |
| dV/dt | 10,000 V/μs - high voltage slew rate immunity; prevents false turn-on in fast-switching SMPS with steep gate drive edges |
Pinout & Package
Package: D2PAK (TO-263AB), surface-mount, isolated heatsink tab (pin 3), RoHS-compliant matte tin-plated leads, MSL Level 1 (245 °C peak reflow).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode 1 | Input terminal for first Schottky diode; connects to high-side switch node in synchronous rectifier or OR-ing configuration |
| Pin 2 | Anode 2 | Input terminal for second Schottky diode; enables dual-input redundancy or interleaved converter phase connection |
| Pin 3 (Heatsink Tab) | Cathode (Common) | Electrically connected to both cathodes; must be soldered to large copper pour for thermal and electrical return path |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOS Schottky technology | Enables 0.32 V VF at 5 A and 125 °C - reduces conduction loss by ≥15 % vs. conventional planar Schottky diodes in same package |
| Common-cathode dual-diode configuration | Eliminates need for external cathode tie; simplifies PCB layout and improves thermal symmetry in dual-rail or redundant power paths |
| MSL Level 1 rating | Supports standard SMT reflow without moisture sensitivity concerns - no baking required prior to assembly |
| UL 94 V-0 molding compound | Ensures flame-retardant operation in enclosed industrial and automotive power modules meeting IEC 62368-1 safety requirements |
Applications
| High-Frequency DC/DC Converters | Reverse Battery Protection |
|---|---|
Use Scenario: 48 V to 12 V step-down converter in telecom power shelf operating at 300 kHz switching frequency. IC Role / Device Role / Timing Role: Freewheeling rectifier replacing synchronous MOSFETs in cost-sensitive designs; handles 20 A per phase with minimal heat generation. Use Value: 0.32 V VF at 125 °C reduces conduction loss by 0.64 W per diode vs. legacy 0.5 V parts - directly improving full-load efficiency by 0.8 %. | Use Scenario: 24 V vehicle ECU protecting against accidental reverse battery connection during service. IC Role / Device Role / Timing Role: Low-VF series-blocking diode placed between battery input and main power rail; conducts only during correct polarity. Use Value: 0.48 V VF at 20 A limits power dissipation to 9.6 W - enabling compact heatsink-free design within 25 mm² PCB area. |
| OR-ing Diodes in Redundant Power Supplies | Switching Power Supply Freewheeling |
Use Scenario: Dual 28 V inputs feeding avionics box with automatic source selection and fault isolation. IC Role / Device Role / Timing Role: Dual-anode, common-cathode topology allows independent anode routing while sharing cathode return - minimizing voltage drop mismatch. Use Value: Matched VF across diodes (±3 % typical) ensures balanced current sharing up to 35 A total without external balancing resistors. | Use Scenario: 100 W AC/DC adapter using active clamp flyback topology with 100 kHz switching. IC Role / Device Role / Timing Role: Secondary-side rectifier conducting during transformer reset phase; requires fast recovery and low stored charge. Use Value: Zero QRR (Schottky) eliminates reverse recovery loss - reducing EMI and improving light-load efficiency by 2.1 % vs. fast recovery diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| VBT4060C-E3/8W | Same die and specs; differs only in packaging - tape-and-reel (800/reel) vs. tube (50/tube); identical thermal and electrical performance | No functional difference; selected based on production volume and SMT line feed requirements | Choose VBT4060C-E3/8W for high-volume automated assembly; VBT4060C-E3/4W for prototyping or low-volume builds |
| SS8060CT | 60 V, 40 A dual common-cathode Schottky; VF = 0.52 V @ 20 A (25 °C), RθJC = 1.7 °C/W; TO-263AB package but planar Schottky process | Higher VF increases conduction loss by ~0.8 W per diode at full load; suitable where cost is prioritized over peak efficiency | Select SS8060CT only if 0.1–0.2 V higher VF is acceptable and thermal margin exceeds 10 °C |
Compared with VBT4060C-E3/4W, the VBT4060C-E3/8W offers identical performance in reel format for production lines, while SS8060CT trades 0.1 V higher VF and +0.2 °C/W thermal resistance for lower unit cost - making it viable only in thermally unconstrained, cost-driven applications.
Availability
VBT4060C-E3/4W is available at Aetrix Electronics and suitable for high-frequency DC/DC converters, reverse battery protection circuits, and OR-ing diode applications requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.
Supply support for VBT4060C-E3/4W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in power rectifiers, MOSFETs, optoelectronics, and passive components with emphasis on reliability, thermal performance, and application-specific optimization.
The VBT4060C-E3/4W belongs to Vishay's TMBS® (Trench MOS Barrier Schottky) product line, engineered specifically for high-efficiency, high-current power conversion systems where ultra-low forward voltage and robust surge capability are mandatory.
FAQ
What is the maximum junction temperature rating for the VBT4060C-E3/4W?
The VBT4060C-E3/4W has a maximum junction temperature (TJ max.) of +150 °C, validated per Vishay's thermal characterization and supported by its 1.5 °C/W junction-to-case thermal resistance. This rating allows reliable operation in automotive under-hood environments and industrial power supplies where ambient temperatures exceed 85 °C, provided proper heatsinking is implemented per the D2PAK mounting pad layout.
Does the VBT4060C-E3/4W support wave soldering on the PCB bottom side?
No, the VBT4060C-E3/4W is explicitly not recommended for PCB bottom-side wave mounting per Vishay's mechanical data sheet. Its D2PAK package features a large exposed heatsink tab that risks solder bridging, thermal stress, or delamination during bottom-side wave processes. Reflow soldering is the approved assembly method, and the device meets MSL Level 1 for lead-free reflow up to 245 °C peak.
What does the "E3/4W" suffix indicate in VBT4060C-E3/4W?
The "E3" suffix denotes RoHS-compliant, commercial-grade construction with matte tin-plated leads qualified to JESD 201 Class 1A whisker testing. The "4W" identifies the packaging format: 50 units per tube, with "W" indicating Vishay's internal package code for D2PAK in tube delivery. This distinguishes it from VBT4060C-E3/8W, which uses tape-and-reel packaging (800/reel).
Is the VBT4060C-E3/4W suitable for reverse battery protection in 24 V automotive systems?
Yes, the VBT4060C-E3/4W is well-suited for reverse battery protection in 24 V automotive systems due to its 60 V VRRM rating (providing 150 % margin over 24 V nominal), 0.48 V VF at 20 A (limiting power loss to 9.6 W), and -40 °C to +150 °C operating range. Its common-cathode dual configuration also supports redundant input paths in mission-critical ECUs.
How does the trench MOS Schottky technology in VBT4060C-E3/4W improve performance over standard Schottky diodes?
The trench MOS Schottky technology in VBT4060C-E3/4W reduces forward voltage by structuring the Schottky barrier in a deep trench geometry, lowering series resistance without increasing leakage. This yields 0.32 V VF at 5 A and 125 °C - ~120 mV lower than comparable planar Schottky diodes - directly cutting conduction losses and enabling higher efficiency in high-current, high-temperature DC/DC converters.
VBT4060C-E3/4W Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- TMBS®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 60 V
- Current - Average Rectified (Io) (per Diode):
- 20A
- Voltage - Forward (Vf) (Max) @ If:
- 620 mV @ 20 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 6 mA @ 60 V
- Operating Temperature - Junction:
- -40°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263AB (D2PAK)
VBT4060C-E3/4W FAQ
1.How can I place an order for VBT4060C-E3/4W through Aetrix?
Please submit a Request for Quotation (RFQ) for VBT4060C-E3/4W on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VBT4060C-E3/4W reliable?
The price and inventory of VBT4060C-E3/4W are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VBT4060C-E3/4W is usually 5 days.
3.What payment methods are accepted for VBT4060C-E3/4W?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VBT4060C-E3/4W transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VBT4060C-E3/4W?
VBT4060C-E3/4W orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VBT4060C-E3/4W order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VBT4060C-E3/4W?
For technical support, including VBT4060C-E3/4W datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VBT4060C-E3/4W requirements.
6.How does Aetrix verify that VBT4060C-E3/4W is sourced from the original manufacturer or authorized distributors?
All VBT4060C-E3/4W products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VBT4060C-E3/4W meets industry standards.
7.What is the process for return or replacement of VBT4060C-E3/4W?
All VBT4060C-E3/4W units undergo pre-shipment inspection (PSI). If there is an issue with VBT4060C-E3/4W, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VBT4060C-E3/4W part is unused and in its original packaging.
Return procedure for VBT4060C-E3/4W:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VBT4060C-E3/4W Tags
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