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Vishay General Semiconductor - Diodes Division VF20120S-E3/4W
- Part No.:
- VF20120S-E3/4W
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
VF20120S-E3/4W.pdf
- Description:
- DIODE SCHOTTKY 120V 20A ITO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:4,616
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Product details
Overview
VF20120S-E3/4W from Vishay General Semiconductor is a high-voltage trench MOS barrier Schottky rectifier in ITO-220AB package, rated for 120 V reverse voltage, 20 A average forward current, and 0.73 V forward voltage at 20 A. It serves as a freewheeling or OR-ing diode in high-frequency DC/DC converters requiring low conduction loss and thermal efficiency.
For engineers reviewing the VF20120S-E3/4W datasheet, VF20120S-E3/4W pinout, VF20120S-E3/4W application, or VF20120S-E3/4W equivalent, key selection criteria include its 0.50 V ultra-low VF at 5 A and 150 °C max junction temperature-critical for high-efficiency 12 V–48 V industrial power supplies and reverse battery protection circuits.
Technical Context
This device uses trench MOS Schottky technology to achieve lower forward voltage and higher efficiency than planar Schottky or fast recovery diodes. Its 10,000 V/μs dV/dt rating and 200 A non-repetitive surge capability support robust operation in switching power supplies with rapid voltage transients.
The ITO-220AB package provides 1500 V isolation from terminal to heatsink and meets J-STD-020 MSL Level 1 (245 °C peak reflow), enabling reliable surface-mount assembly without moisture sensitivity concerns.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 120 V - Withstands up to 120 V repetitive reverse voltage, suitable for 48 V bus systems with safety margin. |
| IF(AV) | 20 A - Sustains continuous 20 A forward current with proper heatsinking, enabling use in 100–200 W power stages. |
| VF @ 20 A | 0.73 V - Low conduction loss reduces power dissipation to ~14.6 W at full load, improving thermal design margin. |
| IFSM | 200 A - Handles short-duration inrush or fault currents without failure, supporting overcurrent resilience in SMPS. |
| RθJC | 4 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting; 50 °C rise at 12.5 W dissipation. |
| TJ max | 150 °C - Allows operation in high-ambient industrial environments without derating below 100% load. |
| dV/dt | 10,000 V/μs - Resists false turn-on during fast voltage transitions in high-frequency synchronous rectification. |
Pinout & Package
Package: ITO-220AB - Isolated tab package with 1500 V AC isolation between leads and heatsink, matte tin-plated leads, RoHS-compliant E3 suffix, JESD201 Class 1A whisker tested.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode (A) | Input terminal for forward current flow; connects to switched node or input rail in freewheeling configuration. |
| Pin 2 | Cathode (K) | Output terminal; ties to common return or output capacitor; carries full load current in OR-ing applications. |
| Pin 3 / Case | Isolated Heatsink Tab | Electrically isolated metal tab (1500 V AC rating) for thermal management-no electrical connection required. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VF = 0.50 V @ 5 A, 125 °C | Reduces conduction loss by ≥30% vs. standard Schottky diodes, directly lowering system heat sink size and cost. |
| Trench MOS Schottky architecture | Enables higher current density and improved soft recovery behavior, minimizing EMI in high-frequency converters. |
| MSL Level 1 (245 °C peak) | Eliminates pre-bake requirement for SMT assembly, reducing manufacturing complexity and cycle time. |
| 1500 V isolation (terminal-to-heatsink) | Permits direct mounting to grounded chassis or shared heatsinks without insulation hardware or creepage spacing. |
| JESD22-B106 solder bath rating (275 °C, 10 s) | Supports wave soldering of through-hole variants and ensures lead finish reliability under thermal stress. |
Applications
| High-Frequency DC/DC Converters | Reverse Battery Protection |
|---|---|
Use Scenario: 48 V–12 V buck converter in telecom power shelf operating at 300–500 kHz. IC Role / Device Role / Timing Role: Freewheeling diode replacing synchronous MOSFET in cost-sensitive designs. Use Value: 0.50 V VF at 125 °C maintains >92% efficiency at full load while simplifying gate drive design. |
Use Scenario: 24 V vehicle electronics module exposed to accidental reverse polarity connection. IC Role / Device Role / Timing Role: Series OR-ing diode blocking reverse current during miswiring events. Use Value: 200 A IFSM withstands momentary short-circuit energy without latch-up or thermal runaway. |
| OR-ing Diodes in Redundant Power Supplies | Switching Power Supply Output Rectification |
Use Scenario: Dual 12 V hot-swap power inputs feeding server backplane with automatic source selection. IC Role / Device Role / Timing Role: Low-VF path selector ensuring minimal voltage drop and cross-conduction prevention. Use Value: 0.73 V VF at 20 A limits voltage mismatch between sources to <100 mV, enabling seamless switchover. |
Use Scenario: Secondary-side rectification in 100 W open-frame AC/DC adapter with 65 kHz flyback topology. IC Role / Device Role / Timing Role: Output rectifier handling continuous 15 A load with minimal ripple and loss. Use Value: RθJC = 4 °C/W allows direct heatsink attachment, achieving <85 °C case temperature at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| V20120S-E3/4W (TO-220AB) | Same electrical specs; TO-220AB package has no isolation, RθJC = 2 °C/W, lower surge rating (175 A). | Requires insulated mounting hardware for chassis-grounded heatsinks; better suited for space-constrained PCB layouts. | Select when thermal performance is prioritized over isolation and board area permits insulation. |
| VB20120S-E3/4W (TO-263AB) | Identical ratings; D2PAK package offers RθJC = 2 °C/W but lacks isolation; surface-mount only. | Designed for automated SMT assembly; unsuitable for high-isolation or through-hole legacy designs. | Choose for high-volume production where reflow compatibility and smaller footprint outweigh isolation needs. |
Compared with V20120S-E3/4W and VB20120S-E3/4W, the VF20120S-E3/4W uniquely combines 1500 V terminal-to-heatsink isolation with ITO-220AB mechanical robustness-making it the only option among the three for grounded-chassis industrial power supplies requiring both safety isolation and through-hole serviceability.
Availability
VF20120S-E3/4W is available at Aetrix Electronics and suitable for high-frequency DC/DC converters, reverse battery protection circuits, and redundant OR-ing power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for VF20120S-E3/4W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Intertechnology is a global semiconductor manufacturer specializing in discrete components, sensors, and passive elements, with leadership in power rectification and high-reliability packaging.
The VF20120S-E3/4W belongs to Vishay's TMBS® (Trench MOS Barrier Schottky) product line, engineered specifically for high-efficiency, high-voltage power conversion in industrial, telecom, and automotive auxiliary systems.
FAQ
What is the maximum junction temperature rating for VF20120S-E3/4W?
The VF20120S-E3/4W has a maximum junction temperature (TJ) of +150 °C, verified per datasheet revision 18-Jun-2018 (Document Number: 88993). This rating enables reliable operation in enclosed industrial enclosures with ambient temperatures up to 85 °C when mounted on an appropriately sized heatsink with ≤4 °C/W thermal resistance.
Does VF20120S-E3/4W support lead-free reflow soldering?
Yes, VF20120S-E3/4W meets J-STD-020 MSL Level 1 with a maximum peak reflow temperature of 245 °C, confirming full compatibility with standard lead-free reflow profiles. The matte tin-plated leads comply with J-STD-002 and JESD22-B102 for solderability, and the E3 suffix confirms RoHS compliance and JESD201 Class 1A whisker resistance.
What is the isolation voltage rating of VF20120S-E3/4W?
The VF20120S-E3/4W, packaged in ITO-220AB, provides 1500 V AC isolation between terminals and the heatsink tab for 1 minute, as specified in the "Maximum Ratings" table. This isolation is intrinsic to the package construction and does not require additional insulating hardware when mounted to a grounded chassis.
How does the forward voltage of VF20120S-E3/4W compare at elevated temperature?
At 125 °C junction temperature, VF20120S-E3/4W exhibits VF = 0.50 V at 5 A and VF = 0.73 V at 20 A-lower than its room-temperature values. This negative temperature coefficient improves thermal stability in parallel configurations and reduces runaway risk under high-temperature operation.
Can VF20120S-E3/4W be used as a direct replacement for standard silicon fast recovery diodes?
VF20120S-E3/4W can replace fast recovery diodes in high-frequency applications where low forward loss is critical, but it is not a universal drop-in substitute. Unlike PN-junction diodes, it has no reverse recovery charge (Qrr ≈ 0), eliminating switching losses-but requires attention to its lower reverse leakage (≤300 μA at 120 V, 25 °C) and absence of reverse recovery ringing.
VF20120S-E3/4W Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- TMBS®
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 120 V
- Current - Average Rectified (Io):
- 20A
- Voltage - Forward (Vf) (Max) @ If:
- 1.12 V @ 20 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 300 µA @ 120 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- ITO-220AB
- Operating Temperature - Junction:
- -40°C ~ 150°C
VF20120S-E3/4W FAQ
1.How can I place an order for VF20120S-E3/4W through Aetrix?
Please submit a Request for Quotation (RFQ) for VF20120S-E3/4W on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VF20120S-E3/4W reliable?
The price and inventory of VF20120S-E3/4W are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VF20120S-E3/4W is usually 5 days.
3.What payment methods are accepted for VF20120S-E3/4W?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VF20120S-E3/4W transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VF20120S-E3/4W?
VF20120S-E3/4W orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VF20120S-E3/4W order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VF20120S-E3/4W?
For technical support, including VF20120S-E3/4W datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VF20120S-E3/4W requirements.
6.How does Aetrix verify that VF20120S-E3/4W is sourced from the original manufacturer or authorized distributors?
All VF20120S-E3/4W products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VF20120S-E3/4W meets industry standards.
7.What is the process for return or replacement of VF20120S-E3/4W?
All VF20120S-E3/4W units undergo pre-shipment inspection (PSI). If there is an issue with VF20120S-E3/4W, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VF20120S-E3/4W part is unused and in its original packaging.
Return procedure for VF20120S-E3/4W:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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