Vishay General Semiconductor - Diodes Division VF40M120C-M3/4W
- Part No.:
- VF40M120C-M3/4W
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Diode Arrays
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
VF40M120C-M3/4W.pdf
- Description:
- DIODE ARR SCHOTTKY 120V ITO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:4,568
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
VF40M120C-M3/4W from Vishay General Semiconductor is a dual high-voltage trench MOS barrier Schottky rectifier in ITO-220AB package, configured as common cathode with 120 V reverse voltage rating, 40 A average forward current (2 × 20 A), and ultra-low 0.46 V forward voltage at 5 A and 125 °C - used in high-frequency DC/DC converters and reverse battery protection circuits.
For engineers reviewing the VF40M120C-M3/4W datasheet, VF40M120C-M3/4W pinout, VF40M120C-M3/4W application, or VF40M120C-M3/4W equivalent, key selection criteria include its dual common-cathode topology, 250 A surge rating, 4.0 °C/W thermal resistance per diode, and JESD 201 Class 1A whisker-tested matte tin leads.
Technical Context
This device integrates two independent Schottky diodes in a single ITO-220AB thermally optimized package with isolated heatsink mounting capability (1500 V AC isolation). Its trench MOS architecture enables low dV/dt sensitivity (10,000 V/μs) and stable operation up to 150 °C junction temperature.
The common-cathode configuration supports parallel output paths with shared cathode connection, reducing PCB routing complexity in OR-ing and freewheeling applications. Each diode exhibits <500 μA reverse leakage at 120 V and 25 °C, and maintains sub-0.72 V VF at 20 A and 125 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 120 V - supports input stages in 48 V and 60 V industrial power systems without derating |
| IF(AV) | 40 A total (2 × 20 A) - enables dual-path 20 A load sharing or redundant 40 A single-output design |
| VF @ 5 A, 125 °C | 0.46 V - reduces conduction loss by >35% vs. standard Schottkys in high-temp environments |
| IFSM | 250 A - withstands inrush and fault currents in switched-mode supplies with minimal risk of bond-wire failure |
| RθJC | 4.0 °C/W per diode - allows direct heatsink mounting for thermal management without thermal interface material degradation |
| dV/dt | 10,000 V/μs - ensures immunity to fast transient switching noise in high-speed synchronous rectification |
| VAC Isolation | 1500 V - meets reinforced insulation requirements for secondary-side mounting on grounded heatsinks |
Pinout & Package
Package: ITO-220AB - thermally enhanced molded case with UL 94 V-0 rating, 10 in-lb max mounting torque, and matte tin-plated leads compliant with J-STD-002 and JESD 22-B102.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| PIN 1 | Anode 1 | Independent anode terminal for first Schottky diode; routed separately for asymmetric load balancing |
| PIN 2 | Cathode (Common) | Shared cathode node for both diodes; electrically and thermally central point for low-inductance output return |
| PIN 3 | Anode 2 | Independent anode terminal for second Schottky diode; enables dual-input OR-ing or interleaved freewheeling |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOS Schottky technology | Enables 0.46 V VF at 5 A/125 °C - cuts conduction loss by ~40% versus planar Schottky equivalents |
| Common-cathode dual-diode configuration | Reduces component count and layout area vs. two discrete SMD Schottkys in OR-ing or synchronous rectifier designs |
| JESD 201 Class 1A whisker testing | Guarantees long-term solder joint reliability under thermal cycling in automotive and industrial under-hood applications |
| 1500 V AC isolation (1 min) | Permits direct mounting to grounded metal heatsinks without additional insulating hardware or creepage barriers |
| Halogen-free, RoHS-compliant M3 suffix | Meets IPC-1752A material declaration requirements for green manufacturing and end-of-life recycling compliance |
Applications
| OR-ing Diode in Dual-Input Power Systems | Reverse Battery Protection |
|---|---|
Use Scenario: Two independent 48 V inputs feeding a common load with automatic source selection and fault isolation. IC Role / Device Role / Timing Role: Dual-anode/common-cathode Schottky rectifier providing low-loss, bidirectionally blocked path control without external controllers. Use Value: 0.46 V VF at 125 °C minimizes voltage drop across each path, preserving >98.5% efficiency at full 20 A per rail. | Use Scenario: Automotive infotainment module powered from vehicle battery with polarity reversal risk during jump-start or service. IC Role / Device Role / Timing Role: High-current, low-VF series blocking element placed between battery and system input. Use Value: 250 A IFSM withstands jump-start surges; 120 V VRRM covers 24 V system transients plus safety margin. |
| High-Frequency DC/DC Converter Freewheeling | Switching Power Supply Output Rectification |
Use Scenario: 300 kHz–1 MHz isolated flyback or forward converter with synchronous rectification disabled or impractical. IC Role / Device Role / Timing Role: Low-Qrr, low-VF freewheeling diode conducting during MOSFET off-time in secondary-side energy recovery. Use Value: Sub-0.72 V VF at 20 A/125 °C reduces heat generation by >30% vs. standard 120 V Schottkys, enabling smaller heatsinks. | Use Scenario: 12 V/30 A output stage of telecom-grade AC/DC front-end with tight thermal constraints. IC Role / Device Role / Timing Role: Dual-diode common-cathode rectifier delivering full-wave output with shared thermal path to heatsink. Use Value: 4.0 °C/W RθJC per diode allows 40 A total output with ≤60 °C case rise above ambient - avoids forced-air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-voltage Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| VF40M120C-M3/4W | Reference part: 120 V, 40 A total, ITO-220AB, common cathode, 0.46 V VF @ 5 A/125 °C | Designed for high-reliability industrial and automotive secondary-side rectification | Select for highest thermal efficiency at elevated temperatures and proven whisker resistance |
| STPS40H12CG | 120 V, 40 A total, TO-247AC package, common cathode, 0.72 V VF @ 20 A/125 °C | Higher VF increases conduction loss; TO-247AC requires larger PCB footprint and different mounting hardware | Consider when existing TO-247 heatsink infrastructure exists and 0.26 V higher VF is acceptable |
| SS8P12L | 120 V, 8 A per diode (16 A total), D2PAK package, common cathode, 0.69 V VF @ 8 A/125 °C | Lower current rating and SMT-only format limit use to lower-power, space-constrained designs | Use only in compact 12–24 V systems where 16 A total output suffices and reflow assembly is mandatory |
Compared with STPS40H12CG and SS8P12L, VF40M120C-M3/4W delivers the lowest forward voltage at high temperature and highest surge robustness in a through-hole package optimized for thermal transfer - making it preferred for 40 A industrial power rails where efficiency and reliability outweigh footprint constraints.
Availability
VF40M120C-M3/4W is available at Aetrix Electronics and suitable for high-frequency DC/DC converters, reverse battery protection circuits, and switching power supply output rectification requiring stable component supply, traceable sourcing, and long-term lifecycle support.
Supply support for VF40M120C-M3/4W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on high-reliability, high-efficiency power components.
The VF40M120C-M3/4W belongs to Vishay's TMBS® (Trench MOS Barrier Schottky) product line, engineered specifically for high-current, high-temperature rectification in industrial and automotive power conversion where low VF and robust surge handling are critical.
FAQ
What is the maximum junction temperature rating for VF40M120C-M3/4W?
The VF40M120C-M3/4W has a maximum operating junction temperature (TJ max.) of +150 °C, validated per JEDEC standards and confirmed in the Vishay datasheet (Document Number: 89471, Revision: 30-Nov-2023). This rating enables reliable operation in enclosed industrial enclosures and under-hood automotive environments where ambient temperatures exceed 85 °C. Derating curves in Figure 1 confirm usable current capacity down to 0 A at 175 °C case temperature - but the absolute TJ limit remains 150 °C.
Does VF40M120C-M3/4W support common-cathode configuration, and how are the pins assigned?
Yes, VF40M120C-M3/4W uses a common-cathode dual-diode configuration. Pin 1 is Anode 1, Pin 2 is the shared Cathode, and Pin 3 is Anode 2 - as explicitly shown in the "PIN 1 / PIN 2 / PIN 3" diagram on page 1 of the official datasheet. This arrangement allows independent anode routing while maintaining a low-inductance, thermally centralized cathode node essential for high-frequency freewheeling and OR-ing topologies.
What is the forward voltage specification of VF40M120C-M3/4W at 20 A and 125 °C?
The VF40M120C-M3/4W exhibits a maximum forward voltage of 0.72 V at 20 A and 125 °C, per the Electrical Characteristics table on page 2 of the Vishay datasheet (Document Number: 89471). This value is measured per diode under pulsed conditions (≤20 ms), and reflects the device's ability to maintain low conduction loss even under sustained high-temperature operation - a key advantage over conventional Schottky rectifiers.
Is VF40M120C-M3/4W halogen-free and RoHS-compliant?
Yes, VF40M120C-M3/4W carries the M3 suffix, which denotes halogen-free, RoHS-compliant construction and commercial-grade qualification per Vishay's material categorization standard (www.vishay.com/doc?99912). The molding compound meets UL 94 V-0 flammability rating, and the matte tin-plated leads comply with J-STD-002 and JESD 22-B102 solderability requirements - confirming full environmental compliance for modern electronics manufacturing.
What is the thermal resistance from junction to case (RθJC) for VF40M120C-M3/4W?
The typical thermal resistance from junction to case (RθJC) for VF40M120C-M3/4W is 4.0 °C/W per diode, as specified in the Thermal Characteristics table on page 2 of the Vishay datasheet. This value applies to each of the two integrated Schottky diodes independently and assumes proper mechanical mounting to a heatsink with recommended 10 in-lb torque. It enables precise thermal modeling for systems requiring ≤60 °C temperature rise at full 20 A per diode.
VF40M120C-M3/4W Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- TMBS®
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 120 V
- Current - Average Rectified (Io) (per Diode):
- 20A
- Voltage - Forward (Vf) (Max) @ If:
- 890 mV @ 20 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 500 µA @ 120 V
- Operating Temperature - Junction:
- -40°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- ITO-220AB
VF40M120C-M3/4W FAQ
1.How can I place an order for VF40M120C-M3/4W through Aetrix?
Please submit a Request for Quotation (RFQ) for VF40M120C-M3/4W on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VF40M120C-M3/4W reliable?
The price and inventory of VF40M120C-M3/4W are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VF40M120C-M3/4W is usually 5 days.
3.What payment methods are accepted for VF40M120C-M3/4W?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VF40M120C-M3/4W transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VF40M120C-M3/4W?
VF40M120C-M3/4W orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VF40M120C-M3/4W order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VF40M120C-M3/4W?
For technical support, including VF40M120C-M3/4W datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VF40M120C-M3/4W requirements.
6.How does Aetrix verify that VF40M120C-M3/4W is sourced from the original manufacturer or authorized distributors?
All VF40M120C-M3/4W products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VF40M120C-M3/4W meets industry standards.
7.What is the process for return or replacement of VF40M120C-M3/4W?
All VF40M120C-M3/4W units undergo pre-shipment inspection (PSI). If there is an issue with VF40M120C-M3/4W, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VF40M120C-M3/4W part is unused and in its original packaging.
Return procedure for VF40M120C-M3/4W:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VF40M120C-M3/4W Tags

-
BAV99-7-F
Diodes Incorporated

-
BAT54C-7-F
Diodes Incorporated

-
BAV99,215
Nexperia USA Inc.

-
BAT54SLT1G
onsemi

-
BAV70LT1G
onsemi

-
BAT54CLT1G
onsemi

-
BAT54S-7-F
Diodes Incorporated

-
BAV99LT1G
onsemi

-
BAT54S,215
Nexperia USA Inc.

-
BAS40-04LT1G
onsemi

-
MMBD1503-TP
Micro Commercial Co

-
BAV99WT1G
onsemi
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

