My Inquiry
My Account
Vishay General Semiconductor - Diodes Division VFT1045CBP-M3/4W
- Part No.:
- VFT1045CBP-M3/4W
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Diode Arrays
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
VFT1045CBP-M3/4W.pdf
- Description:
- DIODE ARR SCHOTT 45V 5A ITO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:9,984
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
VFT1045CBP-M3/4W from Vishay General Semiconductor is a dual common-cathode Trench MOS Barrier Schottky rectifier optimized for photovoltaic solar cell bypass protection in junction boxes. It delivers 5.0 A average forward current per diode, 45 V maximum reverse voltage, and ultra-low 0.41 V forward voltage at 5.0 A (125 °C), enabling high-efficiency DC-only operation without reverse bias stress.
For engineers reviewing the VFT1045CBP-M3/4W datasheet, VFT1045CBP-M3/4W pinout, VFT1045CBP-M3/4W application, or VFT1045CBP-M3/4W equivalent, this device is selected for solar bypass circuits requiring thermal robustness up to 200 °C junction temperature, low conduction loss, and ITO-220AB package compatibility with heatsink mounting.
Technical Context
This dual-diode Schottky rectifier uses trench MOS architecture to reduce forward voltage while maintaining low leakage. Its common-cathode configuration supports parallel bypass paths across PV substrings, with each diode rated for 5.0 A average forward current and 100 A non-repetitive surge capability.
Thermal design is enabled by 6.5 °C/W junction-to-case resistance per diode and validated compliance with IEC 61215 ed. 2 bypass diode thermal testing. Operation is limited to DC forward current without reverse bias, with maximum junction temperature capped at 200 °C under sustained load.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 45 V - Maximum reverse blocking voltage per diode; sufficient for standard 12–24 V PV string configurations. |
| IF(AV) per diode | 5.0 A - Continuous DC forward current rating per diode; defines thermal derating envelope in junction box environments. |
| VF at IF = 5.0 A, 125 °C | 0.41 V - Confirmed forward drop under elevated temperature; directly reduces power loss and heat generation in field operation. |
| RθJC per diode | 6.5 °C/W - Thermal resistance from junction to case; enables heatsink-based thermal management with predictable ΔT. |
| IR at VR = 45 V, 125 °C | 15 mA - Maximum reverse leakage per diode at full-rated voltage and high temperature; impacts substring mismatch loss. |
| TJ max (DC forward) | 200 °C - Absolute maximum junction temperature under DC forward conduction; validated per IEC 61215 bypass test. |
| Isolation voltage | 1500 VAC - Dielectric withstand between terminals and heatsink; ensures safety in grounded-mount PV systems. |
Pinout & Package
Package: ITO-220AB - Insulated TO-220 variant with integral heatsink tab, UL 94 V-0 molding compound, matte tin-plated leads, and 10 in-lb max mounting torque.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode 1 | Input terminal for first PV substring; electrically isolated from heatsink via ITO-220AB insulation. |
| Pin 2 | Cathode (common) | Shared cathode node connecting both diodes; routed to system ground or bus return path. |
| Pin 3 | Anode 2 | Input terminal for second PV substring; independent anode path enables dual-substring bypass. |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOS Schottky technology | Enables 0.41 V VF at 5.0 A and 125 °C - lowers conduction loss vs. planar Schottky or PN diodes in solar bypass duty. |
| Common-cathode dual-diode configuration | Supports independent bypass of two PV substrings using single-package footprint and shared cathode routing. |
| Junction temperature rating of 200 °C (DC) | Validated for sustained operation in thermally constrained junction boxes under IEC 61215 ed. 2 thermal test conditions. |
| Halogen-free, RoHS-compliant M3 suffix | Meets JESD 201 Class 1A whisker resistance and global environmental compliance requirements for solar deployments. |
| 1500 VAC isolation (terminal-to-heatsink) | Permits direct mechanical mounting to grounded heatsinks without additional insulation, simplifying junction box assembly. |
Applications
| Residential Rooftop PV Arrays | Commercial Solar Carport Systems |
|---|---|
Use Scenario: Bypass diode protection for 60- or 72-cell silicon modules installed on pitched roofs with partial shading risk. IC Role / Device Role / Timing Role: Dual-anode Schottky rectifier providing parallel current shunting during cell mismatch, operating exclusively in forward conduction mode. Use Value: 0.41 V VF at 5.0 A/125 °C minimizes self-heating and preserves substring output under hot, shaded conditions. |
Use Scenario: Junction box protection in large-format bifacial modules mounted on elevated carport structures with high ambient exposure. IC Role / Device Role / Timing Role: Common-cathode dual diode enabling compact layout for two independent bypass paths per module, reducing wiring complexity. Use Value: 200 °C TJ rating ensures reliability during extended thermal soak in unventilated mounting environments. |
| Utility-Scale Ground-Mount Farms | Off-Grid Solar + Storage Systems |
Use Scenario: High-current bypass function in 1500 V DC string architectures where localized heating demands robust thermal margin. IC Role / Device Role / Timing Role: Thermally managed Schottky rectifier dissipating <1.5 W per diode at 5 A, mounted directly to aluminum junction box housing. Use Value: 6.5 °C/W RθJC enables stable operation with passive heatsinking, eliminating need for forced air or thermal interface materials. |
Use Scenario: Bypass protection in remote telecom or rural microgrid solar arrays subject to wide ambient swings (-40 °C to +85 °C). IC Role / Device Role / Timing Role: Low-leakage Schottky (≤15 mA IR at 125 °C) minimizing night-time discharge through shaded substrings. Use Value: 500 μA max IR at 25 °C ensures minimal parasitic drain during dark periods, preserving battery charge integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar solar bypass diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| VFT1045CBP-M3/4W | Common-cathode dual diode, ITO-220AB, 45 V, 5 A per diode, 200 °C TJ | Designed specifically for DC-only PV bypass with IEC 61215 thermal validation | Baseline reference part with documented junction box performance |
| STPS10H100CG-TR | Single-diode, TO-220AC, 100 V, 10 A, 175 °C TJ, higher VF (0.75 V @ 10 A) | Higher voltage rating but no dual-anode integration; requires two devices for same function | Use when higher reverse voltage margin is needed and board space allows discrete implementation |
Compared with STPS10H100CG-TR and SB540-E3/54, VFT1045CBP-M3/4W provides integrated dual-anode functionality, lower forward voltage at operating temperature, and validated 200 °C junction capability-making it more space- and thermally efficient for modern compact junction boxes.
Availability
VFT1045CBP-M3/4W is available at Aetrix Electronics and suitable for residential rooftop PV arrays, commercial solar carports, and utility-scale ground-mount farms requiring stable component supply, long-term lifecycle support, and traceable sourcing for solar BOMs.
Supply support for VFT1045CBP-M3/4W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor designs and manufactures discrete semiconductors including diodes, rectifiers, and MOSFETs, with emphasis on power efficiency, reliability, and application-specific qualification.
The VFT1045CBP-M3/4W belongs to Vishay's TMBS® (Trench MOS Barrier Schottky) product line, engineered specifically for high-reliability solar bypass protection with thermal and electrical performance validated under IEC 61215 conditions.
FAQ
What is the maximum junction temperature rating for VFT1045CBP-M3/4W in solar bypass operation?
VFT1045CBP-M3/4W is rated for a maximum junction temperature of 200 °C under DC forward current without reverse bias, as validated per IEC 61215 ed. 2 bypass diode thermal testing. This rating applies only when operated within its specified current and thermal boundary conditions-not under reverse-biased or AC conditions.
Does VFT1045CBP-M3/4W support reverse-bias operation in PV applications?
No. VFT1045CBP-M3/4W is explicitly intended for DC forward current operation without reverse bias, as stated in its typical applications and maximum ratings. Its design and qualification assume unidirectional conduction only; reverse-bias use may exceed leakage or thermal limits and void compliance with IEC 61215.
What does the "M3" suffix indicate on VFT1045CBP-M3/4W?
The "M3" suffix on VFT1045CBP-M3/4W denotes halogen-free, RoHS-compliant construction with matte tin-plated leads that meet J-STD-002 solderability and JESD 201 Class 1A whisker resistance requirements-critical for long-life solar deployments in variable thermal environments.
How is thermal performance characterized for VFT1045CBP-M3/4W?
VFT1045CBP-M3/4W specifies 6.5 °C/W typical junction-to-case thermal resistance per diode and 5.0 °C/W per device. These values are measured under standard test conditions and enable accurate heatsink sizing when mounted with ≤10 in-lb torque to a thermally conductive surface per ITO-220AB mechanical guidelines.
Can VFT1045CBP-M3/4W be used in place of single-diode Schottky rectifiers?
VFT1045CBP-M3/4W integrates two diodes in a common-cathode configuration, so it replaces two single-diode parts in dual-substring bypass layouts. Its pinout (Anode1–Cathode–Anode2) differs from single-diode TO-220 variants, requiring PCB layout adaptation-but reduces component count and improves thermal coupling between diodes.
VFT1045CBP-M3/4W Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- TMBS®
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 45 V
- Current - Average Rectified (Io) (per Diode):
- 5A
- Voltage - Forward (Vf) (Max) @ If:
- 580 mV @ 5 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 500 µA @ 45 V
- Operating Temperature - Junction:
- 200°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- ITO-220AB
VFT1045CBP-M3/4W FAQ
1.How can I place an order for VFT1045CBP-M3/4W through Aetrix?
Please submit a Request for Quotation (RFQ) for VFT1045CBP-M3/4W on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VFT1045CBP-M3/4W reliable?
The price and inventory of VFT1045CBP-M3/4W are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VFT1045CBP-M3/4W is usually 5 days.
3.What payment methods are accepted for VFT1045CBP-M3/4W?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VFT1045CBP-M3/4W transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VFT1045CBP-M3/4W?
VFT1045CBP-M3/4W orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VFT1045CBP-M3/4W order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VFT1045CBP-M3/4W?
For technical support, including VFT1045CBP-M3/4W datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VFT1045CBP-M3/4W requirements.
6.How does Aetrix verify that VFT1045CBP-M3/4W is sourced from the original manufacturer or authorized distributors?
All VFT1045CBP-M3/4W products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VFT1045CBP-M3/4W meets industry standards.
7.What is the process for return or replacement of VFT1045CBP-M3/4W?
All VFT1045CBP-M3/4W units undergo pre-shipment inspection (PSI). If there is an issue with VFT1045CBP-M3/4W, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VFT1045CBP-M3/4W part is unused and in its original packaging.
Return procedure for VFT1045CBP-M3/4W:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VFT1045CBP-M3/4W Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
