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Vishay General Semiconductor - Diodes Division VI20120SG-E3/4W
- Part No.:
- VI20120SG-E3/4W
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
VI20120SG-E3/4W.pdf
- Description:
- DIODE SCHOTTKY 120V 20A TO262AA
- Quantity:
- Payment:
- Shipping:
Inventory:2,746
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Product details
Overview
VI20120SG-E3 from Vishay General Semiconductor is a high-voltage trench MOS barrier Schottky rectifier in TO-262AA package, rated for 120 V repetitive peak reverse voltage (VRRM) and 20 A average forward current (IF(AV)). It delivers ultra-low forward voltage of 0.54 V at 5 A and 125 °C, enabling high-efficiency operation in DC/DC converters and reverse battery protection circuits.
For engineers reviewing the VI20120SG-E3 datasheet, VI20120SG-E3 pinout, VI20120SG-E3 application, or VI20120SG-E3 equivalent, key selection criteria include its 150 A surge rating (IFSM), 2.2 °C/W junction-to-case thermal resistance, and compatibility with lead-free reflow per J-STD-020 MSL Level 1.
Technical Context
This device uses trench MOS Schottky technology to achieve low forward voltage drop and reduced switching losses versus planar Schottky or fast recovery diodes. Its single-diode configuration supports unidirectional conduction with cathode-anode polarity marked on case.
The TO-262AA package provides mechanical robustness and thermal performance suitable for industrial power supplies, with isolation voltage not specified (unlike ITO-220AB), and maximum mounting torque limited to 10 in-lbs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 120 V - blocks up to 120 V reverse voltage without breakdown in repetitive operation |
| IF(AV) | 20 A - continuous average forward current at 25 °C with heatsink, derates above 25 °C |
| IFSM | 150 A - withstands 8.3 ms half-sine surge, critical for inrush and fault tolerance |
| VF @ 20 A, 25 °C | 0.78 V - low conduction loss enables >95% efficiency in 12 V–48 V DC/DC stages |
| TJ max. | 150 °C - maximum junction temperature defines thermal design margin under full load |
| RθJC | 2.2 °C/W - enables direct heatsink coupling for thermal management in compact layouts |
| EAS | 80 mJ - non-repetitive avalanche energy rating supports transient overvoltage resilience |
Pinout & Package
VI20120SG-E3 is housed in TO-262AA package: insulated plastic body with 3 leads, no internal isolation between terminals and heatsink, intended for PCB-mount with external heatsinking via tab (Pin 2). Mounting torque must not exceed 10 in-lbs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode (A) | Input terminal for forward conduction; connects to source-side of switching node |
| Pin 2 | Cathode (K) / Heatsink Tab | Output terminal and primary thermal path; electrically connected to cathode, requires insulating pad if mounted to grounded heatsink |
| Pin 3 | No Connect (NC) | Internally unconnected; must remain floating-no routing or soldering required |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOS Schottky architecture | Enables 0.54 V VF at 5 A and 125 °C-reduces conduction loss by ≥15% vs. planar Schottky equivalents |
| MSL Level 1 compliance | Rated for peak reflow temperature of 245 °C-supports standard Pb-free assembly without baking |
| Matte tin-plated leads | Solderable per J-STD-002 and JESD 22-B102-ensures reliable wetting and joint integrity |
| JESD 201 Class 1A whisker resistance | E3 suffix confirms mitigation against tin whisker growth-critical for long-life industrial deployments |
| UL 94 V-0 molding compound | Self-extinguishing encapsulation meets flame-retardancy requirements for safety-critical power systems |
Applications
| Server Power Supply OR-ing | Automotive Reverse Battery Protection |
|---|---|
|
Use Scenario: Parallel redundant 12 V DC outputs in telecom/server PSUs require diode-based OR-ing to prevent backfeed and enable hot-swap. IC Role / Device Role / Timing Role: VI20120SG-E3 serves as unidirectional blocking diode at each output rail. Use Value: 0.54 V VF at 5 A reduces power loss by ~1.1 W per diode versus 0.75 V alternatives, lowering thermal load in dense 1U chassis. |
Use Scenario: 12 V vehicle electrical system must block reverse polarity connection during jump-start or service. IC Role / Device Role / Timing Role: VI20120SG-E3 acts as series protection diode between battery input and main ECU rail. Use Value: 150 A IFSM withstands cranking surges; 150 °C TJ max ensures reliability across under-hood temperature extremes. |
| Industrial DC/DC Converter Freewheeling | High-Frequency AC-DC Adapter Output Rectification |
|
Use Scenario: 48 V input, 5 V/20 A isolated flyback converter in factory automation PLCs requires low-loss freewheeling path. IC Role / Device Role / Timing Role: VI20120SG-E3 functions as secondary-side synchronous rectifier replacement in quasi-resonant topology. Use Value: 2.2 °C/W RθJC allows direct tab-to-heatsink mounting-eliminates thermal vias and reduces board area by 30% vs. SMD alternatives. |
Use Scenario: Compact 65 W laptop adapter operates at >100 kHz switching frequency, demanding low VF and fast recovery. IC Role / Device Role / Timing Role: VI20120SG-E3 performs output rectification in LLC resonant stage. Use Value: Ultra-low 0.54 V VF at 125 °C maintains efficiency >92% at full load and 40 °C ambient-meets DoE Level VI. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| V20120SG-E3/4W | TO-220AB package; RθJC = 2.2 °C/W; same VRRM, IF(AV), and VF specs | Requires through-hole mounting and separate heatsink; higher profile than TO-262AA | Select when legacy TO-220 footprint is fixed and mechanical clearance permits taller assembly |
| VB20120SG-E3/4W | D2PAK (TO-263AB) package; RθJC = 2.2 °C/W; includes heatsink isolation; 1500 V isolation rating | Suitable for floating-ground designs where terminal-to-heatsink isolation is mandatory | Choose when isolation voltage >1000 V is required-e.g., medical or industrial AC-DC front-end stages |
Compared with V20120SG-E3/4W and VB20120SG-E3/4W, VI20120SG-E3 offers identical electrical performance in a lower-profile TO-262AA package optimized for automated surface-mount assembly and space-constrained PCBs-without isolation overhead or through-hole constraints.
Availability
VI20120SG-E3 is available at Aetrix Electronics and suitable for server power OR-ing, automotive reverse battery protection, and industrial DC/DC converter freewheeling requiring stable component supply and long-term production continuity.
Supply support for VI20120SG-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and optoelectronics for power, signal, and sensing applications.
The TMBS® (Trench MOS Barrier Schottky) product line delivers ultra-low forward voltage and high surge capability for high-efficiency power conversion in computing, automotive, and industrial systems.
FAQ
What is the maximum junction temperature rating for VI20120SG-E3?
The VI20120SG-E3 has a maximum junction temperature (TJ) of +150 °C. This rating defines the upper thermal limit for safe continuous operation and must be respected in thermal design-especially when operating at high ambient temperatures or elevated IF. Derating curves in the datasheet (Fig. 1) specify allowable IF(AV) versus case temperature, and VI20120SG-E3 must be heatsinked to maintain TJ ≤ 150 °C under worst-case load conditions.
Does VI20120SG-E3 have isolation between terminals and heatsink?
No, VI20120SG-E3 in TO-262AA package does not provide electrical isolation between terminals and the heatsink tab (Pin 2). The cathode (K) is directly connected to the metal tab, so an insulating pad or shoulder washer is required when mounting to a grounded heatsink. This differs from the ITO-220AB variant, which specifies 1500 V isolation; VI20120SG-E3 is intended for non-isolated or externally isolated thermal mounting.
What is the forward voltage of VI20120SG-E3 at 20 A and 125 °C?
The forward voltage (VF) of VI20120SG-E3 is 0.78 V at IF = 20 A and TA = 25 °C, and drops to 0.78 V at 125 °C per datasheet Table "ELECTRICAL CHARACTERISTICS". This temperature-stable VF behavior-where VF remains constant or slightly decreases with rising junction temperature-is characteristic of Schottky diodes and critical for predictable loss calculation in thermally stressed environments.
Is VI20120SG-E3 RoHS-compliant and lead-free assembly compatible?
Yes, VI20120SG-E3 carries the -E3 suffix, indicating RoHS-compliant construction and matte tin-plated leads qualified for lead-free reflow soldering. It meets J-STD-020 MSL Level 1 with a maximum peak reflow temperature of 245 °C, and passes JESD 201 Class 1A whisker testing-making it suitable for high-reliability, Pb-free manufacturing without pre-baking or special handling.
What is the role of Pin 3 (NC) on VI20120SG-E3?
Pin 3 on VI20120SG-E3 is designated No Connect (NC) and is internally unconnected. It must remain electrically floating-no circuit routing, grounding, or soldering should be applied. This pin exists for mechanical symmetry and package compatibility but carries no electrical function. Incorrect connection of Pin 3 could compromise thermal performance or cause unintended shorts in the TO-262AA footprint.
VI20120SG-E3/4W Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 120 V
- Current - Average Rectified (Io):
- 20A
- Voltage - Forward (Vf) (Max) @ If:
- 1.33 V @ 20 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 250 µA @ 120 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262AA
- Operating Temperature - Junction:
- -40°C ~ 150°C
VI20120SG-E3/4W FAQ
1.How can I place an order for VI20120SG-E3/4W through Aetrix?
Please submit a Request for Quotation (RFQ) for VI20120SG-E3/4W on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VI20120SG-E3/4W reliable?
The price and inventory of VI20120SG-E3/4W are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VI20120SG-E3/4W is usually 5 days.
3.What payment methods are accepted for VI20120SG-E3/4W?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VI20120SG-E3/4W transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VI20120SG-E3/4W?
VI20120SG-E3/4W orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VI20120SG-E3/4W order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VI20120SG-E3/4W?
For technical support, including VI20120SG-E3/4W datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VI20120SG-E3/4W requirements.
6.How does Aetrix verify that VI20120SG-E3/4W is sourced from the original manufacturer or authorized distributors?
All VI20120SG-E3/4W products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VI20120SG-E3/4W meets industry standards.
7.What is the process for return or replacement of VI20120SG-E3/4W?
All VI20120SG-E3/4W units undergo pre-shipment inspection (PSI). If there is an issue with VI20120SG-E3/4W, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VI20120SG-E3/4W part is unused and in its original packaging.
Return procedure for VI20120SG-E3/4W:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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