Vishay General Semiconductor - Diodes Division VI40100C-M3/4W
- Part No.:
- VI40100C-M3/4W
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Diode Arrays
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
VI40100C-M3/4W.pdf
- Description:
- DIODE ARR SCHOT 100V 20A TO262AA
- Quantity:
- Payment:

- Shipping:

Inventory:7,598
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
VI40100C-M3/4W from Vishay General Semiconductor is a dual high-voltage Trench MOS Barrier Schottky (TMBS®) rectifier in TO-262AA package, configured as common cathode, rated for 100 V reverse voltage and 2 × 20 A average forward current per diode, with ultra-low 0.38 V forward voltage at 5 A and 125 °C junction temperature - optimized for high-efficiency DC/DC converters and reverse battery protection circuits.
For engineers reviewing the VI40100C-M3/4W datasheet, VI40100C-M3/4W pinout, VI40100C-M3/4W application, or VI40100C-M3/4W equivalent, key selection criteria include its 0.61 V VF at 20 A, 250 A IFSM surge rating, 2.0 °C/W thermal resistance per diode, common-cathode configuration, and RoHS-compliant matte tin-plated leads solderable per J-STD-002.
Technical Context
This dual TMBS® rectifier uses trench MOS Schottky technology to achieve lower forward voltage and reduced power losses versus planar Schottky or fast recovery diodes. Its common-cathode topology enables synchronous OR-ing and bidirectional freewheeling paths in compact power stages.
Rated for continuous operation up to 150 °C junction temperature and capable of 10,000 V/μs dV/dt, the VI40100C-M3/4W supports high-frequency switching topologies where low reverse recovery charge and minimal switching loss are critical - especially in 100 kHz–1 MHz DC/DC converters with tight thermal constraints.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 100 V - supports input rails up to 48 V nominal systems with 2× safety margin against transients |
| IF(AV) per diode | 20 A - enables 40 A total dual-diode conduction without derating at 25 °C case temperature |
| VF at IF = 20 A, TA = 25 °C | 0.67 V max - reduces conduction loss to ≤13.4 W per diode at full load |
| IFSM | 250 A - withstands inrush and short-circuit surge events in industrial SMPS designs |
| RθJC | 2.0 °C/W per diode - allows direct heatsink mounting to sustain >15 W dissipation per die at ΔT = 30 °C |
| TJ max | 150 °C - compatible with under-hood automotive and sealed industrial enclosures |
| dV/dt | 10,000 V/μs - prevents false turn-on in high-dV/dt gate-drive or snubberless flyback applications |
Pinout & Package
Package: TO-262AA - surface-mount compatible variant of TO-220 with isolated flange, 1.45 g unit weight, UL 94 V-0 molding compound, and 10 in-lbs max mounting torque.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| PIN 1 | Anode 1 | Input path for first diode; connects to high-side switch node in buck-derived topologies |
| PIN 2 | Cathode (Common) | Shared output node for both diodes; ties to ground or return rail in OR-ing and freewheeling configurations |
| PIN 3 | Anode 2 | Input path for second diode; enables dual-input redundancy or interleaved phase conduction |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOS Schottky technology | Enables 0.38 V VF at 5 A and 125 °C - 15–25 % lower conduction loss vs. planar Schottky equivalents |
| Common-cathode dual configuration | Reduces PCB footprint by 30 % vs. two discrete TO-220 diodes while maintaining independent anode routing |
| Matte tin-plated leads | Ensures reliable solderability per J-STD-002 and passes JESD 201 Class 1A whisker test for long-term reliability |
| Halogen-free, RoHS-compliant (M3 suffix) | Meets IPC-1752A material declaration requirements for automotive and industrial OEM compliance programs |
Applications
| High-Frequency DC/DC Converters | Reverse Battery Protection |
|---|---|
Use Scenario: Primary output rectification in 300–500 W telecom brick supplies operating at 300–500 kHz. IC Role / Device Role / Timing Role: Output synchronous rectifier replacing MOSFETs in secondary-side regulation, leveraging low VF for <1 % conduction loss. Use Value: Enables >95 % peak efficiency at full load while reducing heatsink size by 40 % compared to Si fast recovery alternatives. | Use Scenario: Input protection in 24 V industrial controllers exposed to accidental reverse polarity connection. IC Role / Device Role / Timing Role: Low-loss series blocking diode placed between battery terminal and system input rail. Use Value: Limits voltage drop to ≤0.61 V at 20 A, minimizing standby power loss and thermal rise during sustained reverse fault conditions. |
| OR-ing Diodes in Redundant Power Supplies | Freewheeling Diodes in Motor Drive Inverters |
Use Scenario: Dual 48 V power inputs feeding a single backplane in telecom shelf systems. IC Role / Device Role / Timing Role: Common-cathode dual diode providing automatic source selection with minimal forward drop imbalance. Use Value: Achieves <0.02 V VF mismatch between diodes at 10 A, ensuring balanced current sharing and eliminating hot-swapping transients. | Use Scenario: Freewheeling path across IGBTs in 3-phase BLDC motor drives operating at 10–20 kHz PWM. IC Role / Device Role / Timing Role: Clamp-inductive energy during IGBT turn-off; handles repetitive 250 A surge peaks. Use Value: Zero reverse recovery charge eliminates switching spikes and EMI, enabling cleaner gate drive waveforms and reduced snubber sizing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual TMBS® rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| V40100C-M3/4W | TO-220AB package; 1.85 g; higher RθJC (2.5 °C/W) than VI40100C-M3/4W | Better suited for through-hole prototyping and manual assembly; less optimal for automated SMT lines | Select when legacy board layout or mechanical mounting constraints require TO-220AB form factor |
| SS5P10HM3/84A | Single-diode 100 V/5 A TMBS® in SMA package; no dual configuration or common cathode | Limited to low-power (<10 W) applications; cannot replace VI40100C-M3/4W in dual-path or OR-ing roles | Use only for cost-sensitive, space-constrained auxiliary rails where dual functionality is unnecessary |
Compared with V40100C-M3/4W and SS5P10HM3/84A, the VI40100C-M3/4W delivers superior thermal performance (2.0 °C/W), surface-mount compatibility, and true dual-diode integration - making it the preferred choice for production-grade, high-density power modules requiring simultaneous conduction control and thermal scalability.
Availability
VI40100C-M3/4W is available at Aetrix Electronics and suitable for high-frequency DC/DC converters, reverse battery protection circuits, and redundant OR-ing power supplies requiring stable component supply, consistent lead-time visibility, and long-term lifecycle assurance.
Supply support for VI40100C-M3/4W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on high-reliability, high-efficiency power components.
The VI40100C-M3/4W belongs to Vishay's TMBS® trench Schottky rectifier product line, engineered specifically for high-frequency, high-efficiency power conversion in industrial, telecom, and automotive applications where low VF and robust surge capability are mandatory.
FAQ
What is the maximum junction temperature rating for the VI40100C-M3/4W?
The VI40100C-M3/4W has a maximum operating junction temperature (TJ max) of +150 °C, verified per Vishay Document Number 89162. This rating enables reliable operation in sealed enclosures and under-hood environments where ambient temperatures exceed 85 °C. Derating curves in Figure 1 confirm usable current capacity down to 10 A at 125 °C case temperature. The VI40100C-M3/4W must be mounted to a heatsink meeting thermal resistance targets to maintain this limit.
Is the VI40100C-M3/4W pin-compatible with the V40100C-M3/4W?
No, the VI40100C-M3/4W and V40100C-M3/4W are not pin-compatible: VI40100C-M3/4W uses TO-262AA (surface-mount variant), while V40100C-M3/4W uses TO-220AB (through-hole). Pin numbering is identical (Anode1–Cathode–Anode2), but lead pitch, flange isolation, and mounting method differ. PCB redesign is required to substitute one for the other. The VI40100C-M3/4W remains the only option for automated SMT assembly targeting the same electrical specs.
What is the typical forward voltage of the VI40100C-M3/4W at 10 A and 125 °C?
Per Vishay Document Number 89162, the typical forward voltage (VF) of the VI40100C-M3/4W at IF = 10 A and TA = 125 °C is 0.45 V. This value is measured per diode under pulsed conditions and reflects the device's low-loss advantage at elevated temperatures. At the same condition, the maximum VF is 0.51 V. These values are critical for calculating conduction loss in thermally constrained applications such as fanless industrial PSUs.
Does the VI40100C-M3/4W meet RoHS and halogen-free requirements?
Yes, the VI40100C-M3/4W carries the M3 suffix, confirming it is halogen-free, RoHS-compliant, and commercial grade per Vishay's material categorization standard (Document 99912). Lead finish is matte tin, qualified to JESD 201 Class 1A whisker testing, and compliant with J-STD-002 solderability requirements. Full compliance documentation is available via Vishay's online portal using Document Number 89162.
What is the thermal resistance from junction to case (RθJC) for the VI40100C-M3/4W?
The typical thermal resistance from junction to case (RθJC) for the VI40100C-M3/4W is 2.0 °C/W per diode, as specified in the Thermal Characteristics table of Vishay Document Number 89162. This value applies when the device is mounted with proper torque (≤10 in-lbs) to a flat, clean heatsink surface. It enables accurate thermal modeling for power dissipation up to 15 W per diode before exceeding the 150 °C TJ limit.
VI40100C-M3/4W Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- TMBS®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 20A
- Voltage - Forward (Vf) (Max) @ If:
- 730 mV @ 20 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 1 mA @ 100 V
- Operating Temperature - Junction:
- -40°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262AA
VI40100C-M3/4W FAQ
1.How can I place an order for VI40100C-M3/4W through Aetrix?
Please submit a Request for Quotation (RFQ) for VI40100C-M3/4W on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VI40100C-M3/4W reliable?
The price and inventory of VI40100C-M3/4W are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VI40100C-M3/4W is usually 5 days.
3.What payment methods are accepted for VI40100C-M3/4W?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VI40100C-M3/4W transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VI40100C-M3/4W?
VI40100C-M3/4W orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VI40100C-M3/4W order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VI40100C-M3/4W?
For technical support, including VI40100C-M3/4W datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VI40100C-M3/4W requirements.
6.How does Aetrix verify that VI40100C-M3/4W is sourced from the original manufacturer or authorized distributors?
All VI40100C-M3/4W products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VI40100C-M3/4W meets industry standards.
7.What is the process for return or replacement of VI40100C-M3/4W?
All VI40100C-M3/4W units undergo pre-shipment inspection (PSI). If there is an issue with VI40100C-M3/4W, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VI40100C-M3/4W part is unused and in its original packaging.
Return procedure for VI40100C-M3/4W:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VI40100C-M3/4W Tags

-
BAV99-7-F
Diodes Incorporated

-
BAT54C-7-F
Diodes Incorporated

-
BAV99,215
Nexperia USA Inc.

-
BAT54SLT1G
onsemi

-
BAV70LT1G
onsemi

-
BAT54CLT1G
onsemi

-
BAT54S-7-F
Diodes Incorporated

-
BAV99LT1G
onsemi

-
BAT54S,215
Nexperia USA Inc.

-
BAS40-04LT1G
onsemi

-
MMBD1503-TP
Micro Commercial Co

-
BAV99WT1G
onsemi
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
