STMicroelectronics VN5E160MS-E

Overview

VN5E160MS-E from STMicroelectronics is a single-channel automotive high-side driver in SO-8 package, designed to control 12 V grounded resistive/inductive/capacitive loads with integrated protection and analog current sensing. It features 160 mΩ typical R_ON, 10 A current limitation, 4.5–28 V operating range, and 3.0 V CMOS-compatible input for direct microcontroller interfacing.

For engineers reviewing the VN5E160MS-E datasheet, VN5E160MS-E pinout, VN5E160MS-E application, or VN5E160MS-E equivalent, key selection criteria include diagnostic accuracy (±11% current sense ratio drift), thermal shutdown with autorestart, reverse-battery protection support, and load-dump immunity up to 41 V - all critical for body control modules, lighting systems, and power distribution units.

Technical Context

The device implements VIPower™ M0-5 technology to combine vertical power MOSFET switching with intelligent protection logic. Its architecture integrates active power limitation for inrush/overload management, proportional analog current sense (K₀ = 490 typ. A/A at 25 mA), and dual-threshold thermal shutdown (150 °C trip, 135 °C reset) with hysteresis.

Diagnostic functions are hardware-synchronized: CS_DIS enables/disables current sense independently, while fault signals (power limitation, overtemperature) are reflected directly on the analog I_SENSE output. The input stage includes 0.25 V hysteresis and ±0.7 to +7 V clamp, ensuring robustness against transients per ISO 7637-2 and AEC-Q100.

Key Specifications

Pinout & Package

Package: SO-8 (small-outline, surface-mount, 150 mil width), thermally enhanced for automotive under-hood use. Pin pitch: 1.27 mm; max junction-to-ambient thermal resistance: 60 °C/W (on 2-layer PCB with 200 mm² copper).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side driver applications.

Compared with VN5E160MS-E, TPS4H160-Q1 trades analog simplicity for digital configurability, while VNQ5E160K-E sacrifices single-channel compactness for channel density - making VN5E160MS-E optimal for space-constrained, analog-diagnostic-focused automotive nodes.

Availability

VN5E160MS-E is available at Aetrix Electronics and suitable for body control modules, LED lighting systems, and engine bay power distribution requiring stable component supply across automotive production lifecycles.

Supply support for VN5E160MS-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive-grade power ICs, microcontrollers, and sensors.

VN5E160MS-E belongs to the VIPower™ high-side driver family, engineered specifically for AEC-Q100-compliant automotive power switching with integrated diagnostics and protection - targeting cost-sensitive, reliability-critical body electronics.

FAQ

What is the maximum continuous output current for VN5E160MS-E?

The device does not specify a fixed continuous current rating; instead, it implements self-limiting power management. At 25 °C ambient with adequate PCB copper (≥200 mm²), it sustains ~4 A continuously before thermal shutdown activates. Actual current depends on thermal design, ambient temperature, and duty cycle - full 10 A capability is limited to short-duration overload events.

How does the current sense function behave during thermal shutdown?

During thermal shutdown, the VN5E160MS-E maintains proportional current sensing until junction temperature reaches 150 °C, after which I_SENSE drops to near-zero as the output turns off. In fault conditions like overload or short-circuit, I_SENSE saturates at ~9 mA (V_CC = 13 V, R_SENSE = 3.9 kΩ), signaling active power limitation - not thermal shutdown itself.

Can VN5E160MS-E drive inductive loads without an external flyback diode?

Yes. The device integrates an internal freewheeling path that clamps demagnetization energy during turn-off. For L = 20 mH and I_OUT = 1 A, V_DEMAG is limited to V_CC − 46 V. However, external snubbers may still be needed for very high-energy inductors (>36 mJ single-pulse) or to meet EMC requirements.

Is reverse battery protection built-in or external?

Reverse battery protection is not fully integrated: the IC survives −0.3 V on V_CC and −13.5 V on GND, but sustained reverse polarity requires external protection. ST recommends either a series resistor (R_GND) or Schottky diode in the GND line (Figure 29), as specified in Section 3.1 of the datasheet - no internal diode exists between GND and substrate.