STMicroelectronics VN820B5-E

Overview

VN820B5-E from STMicroelectronics is a high-side power switch IC designed for automotive load driving with ground-referenced loads. It features 40 mΩ R_DS(on), 9 A continuous output current, 36 V maximum supply voltage, and integrated protections including thermal shutdown, overvoltage clamp, undervoltage lockout, and on/off-state open-load detection. It is used in body control modules for driving lamps, solenoids, and relays in 12 V/24 V vehicle systems.

For engineers reviewing the VN820B5-E datasheet, VN820B5-E pinout, VN820B5-E application, or VN820B5-E equivalent, key selection criteria include its P2PAK package thermal performance (R_thj-case = 1.9 °C/W), CMOS-compatible input logic, status pin diagnostics, reverse battery protection capability, and AEC-Q100 qualification for automotive environments.

Technical Context

The VN820B5-E implements a monolithic VIPower® M0-3 high-voltage BCD process, integrating a vertical power MOSFET with smart driver and protection circuitry. Its architecture enables active current limitation (5.5–20 A range), thermal shutdown at 150–200 °C with 135 °C reset, and dual-mode open-load detection: current-based during on-state and voltage-threshold-based (1.5–3.5 V) during off-state.

It incorporates an internal V_CC clamp diode (forward voltage ≤0.6 V at 2 A, 150 °C), electrostatic discharge protection (4 kV HBM on INPUT/STATUS, 5 kV on OUTPUT/V_CC), and robust transient immunity per ISO 7637-2 pulses 1–5. The status pin provides real-time fault reporting via open-drain logic compatible with 3.3 V/5 V microcontrollers.

Key Specifications

Pinout & Package

The VN820B5-E is housed in a thermally enhanced P2PAK surface-mount package (7.5 mm × 8.5 mm × 2.3 mm), featuring an exposed drain pad for direct PCB copper thermal coupling and rated for 65.8 W power dissipation at T_C = 25 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side driver applications.

Compared with VN820SP-E, the VN820B5-E delivers superior thermal performance in high-power automotive applications due to its P2PAK package's lower junction-to-ambient resistance. Against TPS27082L, it offers automotive-specific protections (reverse battery readiness, ISO 7637 compliance) and dual-mode diagnostics essential for functional safety–aligned vehicle subsystems.

Availability

VN820B5-E is available at Aetrix Electronics and suitable for automotive body control modules, engine management subsystems, and commercial vehicle power distribution requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for VN820B5-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management solutions with vertical manufacturing capabilities and broad automotive qualification expertise.

The VN820B5-E belongs to ST's VIPower® high-side driver product line, engineered specifically for automotive load switching applications demanding high reliability, integrated diagnostics, and compliance with AEC-Q100 and ISO 16750 standards.

FAQ

What is the recommended PCB layout for optimal thermal performance of the VN820B5-E?

For best thermal performance, use ≥6 cm² of 35 µm thick copper connected to the exposed drain pad on the top layer, with ≥4 thermal vias (0.3 mm diameter, 0.8 mm pitch) to inner ground/power planes. ST recommends a minimum 10 mm × 10 mm copper pour under the P2PAK footprint, as validated in Figure 28 of the datasheet (R_thj-amb = 37 °C/W).

How does the VN820B5-E handle inductive load turn-off energy?

The device features an active V_CC clamp that limits demagnetization voltage to V_CC − 41 V to V_CC − 55 V during inductive turn-off. This allows safe energy dissipation without external snubbers for typical automotive inductances (e.g., ≤6 mH at 13 A), as specified in Table 10 and Figure 26.

Can the STATUS pin be directly interfaced with a 3.3 V microcontroller GPIO?

Yes - the STATUS pin is an open-drain output with ≤0.5 V low-level voltage at 1.6 mA sink current and 10 µA leakage in high-impedance state. A 4.7 kΩ pull-up to 3.3 V is sufficient for direct MCU interface without level translation, as confirmed in Table 9 and Figure 4.

Does the VN820B5-E require external components for reverse battery protection?

Yes - reverse battery protection requires an external network on the GND pin: either a series resistor (RGND) or a Schottky diode (DGND) as shown in Section 3.1 of the datasheet. The IC itself detects GND disconnection and shuts down, but the external network prevents destructive current flow during polarity reversal.