STMicroelectronics VNB10N07

Overview

VNB10N07 from STMicroelectronics is a fully autoprotected monolithic power MOSFET built on VIPower M0 technology, functioning as a rugged high-side switch with integrated linear current limiting (10 A), overvoltage clamp (70 V), thermal shutdown (150 °C), and diagnostic feedback via the input pin. It replaces standard MOSFETs in DC–50 kHz inductive load switching applications such as automotive body control modules and industrial solenoid drivers.

For engineers reviewing the VNB10N07 datasheet, VNB10N07 pinout, VNB10N07 application, or VNB10N07 equivalent, key selection criteria include its 0.1 Ω R_DS(on) at 5 A, fault-sensing capability through input-pin voltage collapse, thermal impedance of 2.5 °C/W (D2PAK), and compatibility with TTL-level drive despite internal gate buffering.

Technical Context

The VNB10N07 integrates a power MOSFET stage with analog gate access, enabling direct linear-mode operation for current-limited switching. Its protection logic operates independently of input voltage: current limiting activates at ≥7 A (Vin = 5 V) or ≥10 A (Vin = 10 V), while thermal shutdown triggers at ≥150 °C and resets at ≤135 °C.

Clamp protection engages at 55 V threshold (V_CLTH) and clamps to 70 V (typ.) during inductive flyback. Fault status is signaled by sinking ≥50 mA through the input pin to ground via a 100 Ω internal path-detectable without external components.

Key Specifications

Pinout & Package

Available in PowerSO-10, D2PAK (TO-263), SOT-82-FM, and ISOWATT220 packages. The VNB10N07 is specified for PowerSO-10 and D2PAK variants; this description applies to the D2PAK (TO-263) version, which uses the tab as drain connection and offers 2.5 °C/W junction-to-case thermal resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side protected switch applications.

Compared with STSPIN250 and IPS1021H, the VNB10N07 delivers superior avalanche ruggedness (0.4 J vs ≤0.1 J), lower conduction loss (0.1 Ω), and direct analog gate access-making it optimal for cost-sensitive, high-reliability DC–50 kHz switching where minimal external components and proven field robustness are critical.

Availability

VNB10N07 is available at Aetrix Electronics and suitable for automotive body control modules, industrial solenoid drivers, smart lighting ballasts, and DC motor starters requiring stable component supply across production lifecycles.

Supply support for VNB10N07 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and consumer markets since 1987.

The VNB10N07 belongs to ST's OMNIFET family of autoprotected power switches, engineered specifically for replacing discrete MOSFETs + protection ICs in harsh-environment DC load switching applications up to 50 kHz.

FAQ

What is the maximum continuous drain current for VNB10N07 under typical PCB cooling?

The VNB10N07 is internally current-limited to 10 A at V_IN = 10 V, but sustained operation depends on thermal management. With D2PAK package and 2.5 °C/W R_th(j-c), it can deliver 5 A continuously at T_c = 80 °C. At 10 A, junction temperature rises rapidly; derating is required above 25 °C case temperature per the datasheet derating curve.

Can VNB10N07 be used as a low-side switch?

No - the VNB10N07 is designed exclusively as a high-side switch. Its source pins are internally referenced to substrate ground, and the input pin controls the gate relative to source. Using it as a low-side switch would reverse internal protection logic and disable fault feedback, violating absolute maximum ratings and voiding protection functionality.

How does the diagnostic feedback signal work during overtemperature fault?

During overtemperature fault, the internal protection circuit disconnects the input pin from the gate and connects it to ground through a 100 Ω resistor. This pulls the input voltage to ≤0.5 V when driven by a typical 10 kΩ pull-up, enabling detection with a single MCU GPIO or comparator. The fault remains active until junction temperature falls below 135 °C.

Is external gate resistor required for safe operation?

An external gate resistor is not required for basic on/off operation but is strongly recommended to control dV/dt and EMI. With no resistor, t_r/t_f drops to ~20 ns, increasing switching losses and radiated emissions. A 10–100 Ω resistor balances speed (50 kHz PWM) and EMI; values >1 kΩ degrade turn-off performance and increase fault detection latency.