STMicroelectronics VNB10N07TR-E

Overview

VNB10N07TR-E from STMicroelectronics is a fully autoprotected monolithic Power MOSFET in the OMNIFET® family, designed as a rugged, self-protected high-side switch for DC–50 kHz inductive load control. It features 70 V drain-source clamp voltage, 0.1 Ω R_DS(on) at 5 A, 10 A current limit, integrated thermal shutdown at 150 °C, and diagnostic feedback via input pin voltage collapse to ~0 V during fault.

For engineers reviewing the VNB10N07TR-E datasheet, VNB10N07TR-E pinout, VNB10N07TR-E application, or VNB10N07TR-E equivalent, this device is selected for robustness-critical 12–24 V industrial switching where overvoltage, short-circuit, and overtemperature events must be autonomously managed without external protection circuitry.

Technical Context

The VNB10N07TR-E integrates a VIPower M0-process power MOSFET with on-die linear current limiting, avalanche-rated overvoltage clamping (V_CLAMP = 70 V), and junction temperature sensing that triggers shutdown at ≥150 °C and automatic restart at ≤135 °C. Its input pin directly drives the internal gate but also sinks 50 mA fault current when protection activates.

It operates as a standard N-channel high-side switch with TTL-compatible input logic, supports analog driving via direct gate access, and delivers 0.4 J single-pulse avalanche energy (E_AS) under V_DD = 20 V conditions - enabling reliable unclamped inductive turn-off in solenoid and relay drivers.

Key Specifications

Pinout & Package

Package: PowerSO-10 (surface-mount, thermally enhanced 10-lead package with exposed drain tab). Thermal resistance R_thj-case = 2.5 °C/W enables high-power operation with minimal heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side protected switch applications.

Compared with IPS1021H and VND5T010AK, the VNB10N07TR-E offers superior avalanche energy handling (0.4 J), tighter thermal hysteresis (15 °C), and higher current limit - making it optimal for 24 V industrial actuators where unclamped inductive turn-off and sustained overload resilience are mandatory.

Availability

VNB10N07TR-E is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, medical fluid control, and building automation systems requiring stable component supply across multi-year production cycles.

Supply support for VNB10N07TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and consumer markets since 1987.

The OMNIFET® product line was developed specifically for high-reliability DC switching in harsh environments - integrating protection, diagnostics, and ruggedness into single-chip high-side drivers for solenoids, relays, and small motors.

FAQ

What is the maximum continuous drain current for VNB10N07TR-E at 25°C case temperature?

The device features an internally limited 10 A linear current limit, not a rated continuous current. At T_C = 25°C and with adequate heatsinking, it can sustain 5 A continuously with <1 W conduction loss (R_DS(on) = 0.1 Ω). Higher currents trigger immediate linear limiting, increasing power dissipation - thermal design must ensure junction temperature stays below 150°C during such events.

Can VNB10N07TR-E be used as a low-side switch?

No - the device is configured exclusively as a high-side switch. Its source terminals are internally tied to the substrate reference and cannot be floated; the drain is the high-current output connected to the load's positive rail. Attempting low-side configuration violates internal topology and will result in malfunction or permanent damage.

How does the diagnostic feedback signal work during a fault condition?

During overtemperature or short-circuit events, the internal protection circuit disconnects the input pin from the gate and connects it to ground through a ~100 Ω resistor. This pulls the input voltage to near 0 V (typically <0.5 V), which is detectable by an MCU ADC or comparator - providing a hardware-level fault flag without requiring additional pins or external circuitry.

Is external gate resistor required when driving VNB10N07TR-E from a microcontroller?

A series gate resistor (10–100 Ω) is recommended to damp ringing and control dI/dt during switching. The device's 30 nC input charge and 6–8 S transconductance make it responsive to low-impedance drivers; omitting the resistor may cause overshoot, EMI, or shoot-through in half-bridge configurations, though basic on/off switching from a 3.3 V or 5 V GPIO remains functional.