STMicroelectronics VNB14NV0413TR

Overview

VNB14NV0413TR from STMicroelectronics is a monolithic VIPower™ M0-based protected Power MOSFET in TO-252 (DPAK) package, designed as a robust replacement for standard N-channel MOSFETs in DC–50 kHz switching applications. It integrates linear current limiting (12 A typ.), thermal shutdown (170 °C), overvoltage clamp (45 V), diagnostic feedback via input pin, and ESD protection (4 kV HBM). It serves as a smart high-side switch in automotive body control modules.

For engineers reviewing the VNB14NV0413TR datasheet, VNB14NV0413TR pinout, VNB14NV0413TR application, or VNB14NV0413TR equivalent, key selection criteria include its 35 mΩ R_DS(on) at 5 V gate drive, fault-sink current capability (15 mA), unclamped inductive energy rating (93 mJ), and compatibility with TTL-level logic inputs.

Technical Context

The device implements an integrated analog gate driver with direct access to the power MOSFET gate, enabling precise linear-mode control and fast switching (t_d(on) = 80 ns typ., t_f = 150 ns typ. at R_GEN = 10 Ω). Its protection architecture uses on-die temperature sensing and current mirroring to enforce real-time current limit and thermal shutdown independent of input voltage.

Clamp behavior is defined by internal Zener-like structure with V_CLAMP = 45 V (typ.) and V_CLTH = 36 V, providing ruggedness against inductive kickback. Fault reporting occurs via I_GF sink current (15 mA typ.) on the IN pin during overtemperature, requiring no external components for basic diagnostics.

Key Specifications

Pinout & Package

Package: TO-252 (DPAK), surface-mount, 3-pin, exposed drain pad for thermal dissipation. Thermal resistance junction-to-case is 1.7 °C/W max; junction-to-ambient is 65 °C/W max on standard FR4 with 0.5 cm² copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected high-side switch applications.

Compared with VNB14NV0413TR, STSPIN250 adds motion control functionality but removes standalone high-current switching utility, while IPS1021H trades current capacity and conduction efficiency for smaller die size and lower thermal mass - making it preferable only in sub-5 A applications where board area is critical.

Availability

VNB14NV0413TR is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC outputs, and DC power distribution systems requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant ruggedness.

Supply support for VNB14NV0413TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management ICs with vertical manufacturing and broad IP portfolio.

VNB14NV0413TR belongs to the OMNIFET II family of protected Power MOSFETs, engineered specifically for replacing mechanical relays and discrete MOSFETs in harsh-environment 12–24 V DC systems with integrated diagnostics and self-protection.

FAQ

What is the maximum continuous drain current for VNB14NV0413TR under typical PCB conditions?

The device supports up to 7 A continuous drain current at T_c = 25 °C with a standard FR4 board (0.5 cm² copper), limited by its 74 W total dissipation rating and 1.7 °C/W junction-to-case thermal resistance. Derating is required above 25 °C case temperature per Figure 10 in the datasheet.

Can VNB14NV0413TR be driven directly from a 3.3 V microcontroller GPIO?

Yes - its input threshold voltage is specified from 0.5 V to 2.5 V, and it draws only 150 µA during normal operation. A 3.3 V GPIO meets the minimum 2.5 V V_INTH max requirement and supplies sufficient margin for noise immunity and voltage drop across series resistors.

How does the diagnostic feedback mechanism work during thermal shutdown?

When junction temperature exceeds 170 °C, the device sinks 10–20 mA (I_GF) through the Input pin. If the driving source has low impedance, this pulls the pin voltage toward 0 V, signaling fault to the MCU. If the source is high-impedance, the pin naturally falls to 0 V - no external pull-down is needed.

Is external clamping required when switching inductive loads?

No - the integrated clamp activates at ~36 V and limits V_DS to ≤55 V, validated for unclamped inductive switching up to 93 mJ. External TVS is unnecessary unless system-level surge requirements exceed IEC 61000-4-5 Level 4 or load inductance exceeds 24 mH.